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IXFN170N30P IXFN170N30P IXYS IXFN170N30P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Power dissipation: 680W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 240nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 380A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 11mΩ
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+1878.18 грн
2+ 1712.5 грн
IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
1+1677.42 грн
2+ 1529.76 грн
IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)
1+3373.6 грн
10+ 3197.02 грн
IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Pulsed drain current: 600A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN210N30P3 IXFN210N30P3 IXYS IXFN210N30P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+3231 грн
IXFN210N30X3 IXFN210N30X3 IXYS IXFN210N30X3.pdf 300VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+3167.2 грн
30+ 3007.95 грн
IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
1+2543.33 грн
2+ 2318.61 грн
30+ 2147.36 грн
IXFN230N20T IXFN230N20T IXYS IXFN230N20T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+2736.59 грн
IXFN240N25X3 IXFN240N25X3 IXYS IXFN240N25X3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.5mΩ
Pulsed drain current: 600A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 345nC
Reverse recovery time: 165ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Gate charge: 197nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
1+4065.01 грн
IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
1+4180.41 грн
IXFN27N120SK IXFN27N120SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN300N10P IXFN300N10P IXYS IXFN300N10P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN300N20X3 IXFN300N20X3 IXYS IXFN300N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN30N120P IXFN30N120P IXYS IXFN30N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 310nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN320N17T2 IXFN320N17T2 IXYS IXFN320N17T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N100P IXFN32N100P IXYS IXFN32N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N100Q3 IXFN32N100Q3 IXYS IXFN32N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN32N80P IXFN32N80P IXYS IXFN32N80P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.27Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN340N07 IXFN340N07 IXYS 98547.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; Ugs: ±30V; screw
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 490nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
1+3805.15 грн
IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN360N15T2 IXFN360N15T2 IXYS IXFN360N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Power dissipation: 1.07kW
Polarisation: unipolar
Drain current: 310A
Electrical mounting: screw
Reverse recovery time: 150ns
Type of module: MOSFET transistor
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
On-state resistance: 4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
1+3702.89 грн
IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 180ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN38N100P IXFN38N100P IXYS IXFN38N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
кількість в упаковці: 1 шт
товар відсутній
IXFN400N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn400n15x3_datasheet.pdf.pdf IXFN400N15X3 Transistor modules MOSFET
товар відсутній
IXFN40N110P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110p_datasheet.pdf.pdf IXFN40N110P Transistor modules MOSFET
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+2944.46 грн
IXFN40N110Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110q3_datasheet.pdf.pdf IXFN40N110Q3 Transistor modules MOSFET
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
1+2709.25 грн
IXFN40N90P IXFN40N90P IXYS IXFN40N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W
Type of module: MOSFET transistor
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 33A
Kind of channel: enhanced
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.23Ω
Reverse recovery time: 300ns
Pulsed drain current: 80A
Power dissipation: 695W
кількість в упаковці: 1 шт
товар відсутній
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)
1+4759.25 грн
IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
1+2455.14 грн
2+ 2239 грн
IXFN44N80Q3 IXFN44N80Q3 IXYS IXFN44N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN48N60P IXFN48N60P IXYS IXFN48N60P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN50N120SIC IXFN50N120SIC IXYS IXFN50N120SiC-DTE.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Semiconductor structure: single transistor
Reverse recovery time: 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+5991.98 грн
IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Semiconductor structure: single transistor
Reverse recovery time: 54ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Case: SOT227B
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
1+5867.2 грн
IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
IXFN52N100X IXFN52N100X IXYS IXFN52N100X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
товар відсутній
IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN62N80Q3 IXFN62N80Q3 IXYS IXFN62N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 0.27µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN64N50P IXFN64N50P IXYS IXFN64N50P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN64N60P IXFN64N60P IXYS IXFN64N60P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+2525.51 грн
2+ 2303.23 грн
IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Reverse recovery time: 250ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Polarisation: unipolar
On-state resistance: 65mΩ
Drain current: 65A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain-source voltage: 850V
Gate charge: 230nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 140A
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+3044.3 грн
IXFN80N50 IXFN80N50 IXYS IXFN80N50.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN80N50P IXFN80N50P IXYS IXFN80N50P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN80N50Q3 IXFN80N50Q3 IXYS IXFN80N50Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+2052.68 грн
2+ 1871.71 грн
IXFN82N60P IXFN82N60P IXYS IXFN82N60P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN82N60Q3 IXFN82N60Q3 IXYS IXFN82N60Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+4255.46 грн
IXFN90N170SK IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf IXFN90N170SK Transistor modules MOSFET
товар відсутній
IXFN90N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn90n85x_datasheet.pdf.pdf IXFN90N85X Transistor modules MOSFET
товар відсутній
IXFN94N50P2 IXFN94N50P2 IXYS IXFN94N50P2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN170N30P IXFN170N30P.pdf
IXFN170N30P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 138A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 18mΩ
Pulsed drain current: 500A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 258nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Power dissipation: 680W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 240nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 380A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 150A
On-state resistance: 11mΩ
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1878.18 грн
2+ 1712.5 грн
IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhanced
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1677.42 грн
2+ 1529.76 грн
IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3373.6 грн
10+ 3197.02 грн
IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 188A
Pulsed drain current: 600A
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 10.5mΩ
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN210N30P3 IXFN210N30P3.pdf
IXFN210N30P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3231 грн
IXFN210N30X3 IXFN210N30X3.pdf 300VProductBrief.pdf
IXFN210N30X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3167.2 грн
30+ 3007.95 грн
IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2543.33 грн
2+ 2318.61 грн
30+ 2147.36 грн
IXFN230N20T IXFN230N20T.pdf
IXFN230N20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Pulsed drain current: 630A
Power dissipation: 1090W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 358nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 460nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2736.59 грн
IXFN240N25X3 IXFN240N25X3.pdf
IXFN240N25X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 240A; SOT227B; screw; Idm: 600A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.5mΩ
Pulsed drain current: 600A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 345nC
Reverse recovery time: 165ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 390mΩ
Gate charge: 197nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+4065.01 грн
IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.5Ω
Pulsed drain current: 60A
Power dissipation: 695W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+4180.41 грн
IXFN27N120SK
IXFN27N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 21.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 160nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN300N10P IXFN300N10P.pdf
IXFN300N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN300N20X3 IXFN300N20X3.pdf 200VProductBrief.pdf
IXFN300N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN30N120P IXFN30N120P.pdf
IXFN30N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: 75A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 310nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN320N17T2 IXFN320N17T2.pdf
IXFN320N17T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 170V; 260A; SOT227B; screw; Idm: 800A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 170V
Drain current: 260A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 800A
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate charge: 640nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N100P IXFN32N100P.pdf
IXFN32N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N100Q3 IXFN32N100Q3.pdf
IXFN32N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN32N80P IXFN32N80P.pdf
IXFN32N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.27Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN340N07 98547.pdf
IXFN340N07
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; Ugs: ±30V; screw
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 490nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3805.15 грн
IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Reverse recovery time: 130ns
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.6mΩ
Power dissipation: 830W
Type of module: MOSFET transistor
Gate charge: 525nC
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN360N15T2 IXFN360N15T2.pdf
IXFN360N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Semiconductor structure: single transistor
Mechanical mounting: screw
Power dissipation: 1.07kW
Polarisation: unipolar
Drain current: 310A
Electrical mounting: screw
Reverse recovery time: 150ns
Type of module: MOSFET transistor
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 900A
On-state resistance: 4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3702.89 грн
IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 180ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN38N100P IXFN38N100P.pdf
IXFN38N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
кількість в упаковці: 1 шт
товар відсутній
IXFN400N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn400n15x3_datasheet.pdf.pdf
Виробник: IXYS
IXFN400N15X3 Transistor modules MOSFET
товар відсутній
IXFN40N110P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110p_datasheet.pdf.pdf
Виробник: IXYS
IXFN40N110P Transistor modules MOSFET
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2944.46 грн
IXFN40N110Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn40n110q3_datasheet.pdf.pdf
Виробник: IXYS
IXFN40N110Q3 Transistor modules MOSFET
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2709.25 грн
IXFN40N90P IXFN40N90P.pdf
IXFN40N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W
Type of module: MOSFET transistor
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 33A
Kind of channel: enhanced
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.23Ω
Reverse recovery time: 300ns
Pulsed drain current: 80A
Power dissipation: 695W
кількість в упаковці: 1 шт
товар відсутній
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+4759.25 грн
IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2455.14 грн
2+ 2239 грн
IXFN44N80Q3 IXFN44N80Q3.pdf
IXFN44N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN48N60P description IXFN48N60P.pdf
IXFN48N60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN50N120SIC IXFN50N120SiC-DTE.pdf
IXFN50N120SIC
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Semiconductor structure: single transistor
Reverse recovery time: 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+5991.98 грн
IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Semiconductor structure: single transistor
Reverse recovery time: 54ns
Drain-source voltage: 1.2kV
Drain current: 48A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Case: SOT227B
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+5867.2 грн
IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
IXFN52N100X IXFN52N100X.pdf
IXFN52N100X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
товар відсутній
IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN62N80Q3 IXFN62N80Q3.pdf
IXFN62N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 0.27µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN64N50P description IXFN64N50P.pdf
IXFN64N50P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN64N60P description IXFN64N60P.pdf
IXFN64N60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2525.51 грн
2+ 2303.23 грн
IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Reverse recovery time: 250ns
Semiconductor structure: single transistor
Case: SOT227B
Power dissipation: 830W
Polarisation: unipolar
On-state resistance: 65mΩ
Drain current: 65A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain-source voltage: 850V
Gate charge: 230nC
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 140A
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3044.3 грн
IXFN80N50 description IXFN80N50.pdf
IXFN80N50
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN80N50P IXFN80N50P.pdf
IXFN80N50P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
IXFN80N50Q3 IXFN80N50Q3.pdf
IXFN80N50Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2052.68 грн
2+ 1871.71 грн
IXFN82N60P description IXFN82N60P.pdf
IXFN82N60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN82N60Q3 IXFN82N60Q3.pdf
IXFN82N60Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+4255.46 грн
IXFN90N170SK media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf
Виробник: IXYS
IXFN90N170SK Transistor modules MOSFET
товар відсутній
IXFN90N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn90n85x_datasheet.pdf.pdf
Виробник: IXYS
IXFN90N85X Transistor modules MOSFET
товар відсутній
IXFN94N50P2 IXFN94N50P2.pdf
IXFN94N50P2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
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