| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFR48N60P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 37A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFR64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 94mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR64N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 320W Case: ISOPLUS247™ On-state resistance: 0.105Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR64N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 568W Case: ISOPLUS247™ On-state resistance: 0.104Ω Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR80N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR80N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 72mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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IXFR80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 540W Case: ISOPLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFR90N30 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 75A Power dissipation: 417W Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 30 шт |
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IXFT100N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns кількість в упаковці: 1 шт |
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IXFT120N15P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 120A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 600W Polarisation: unipolar Gate charge: 150nC Technology: HiPerFET™; PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXFT120N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns Mounting: SMD Case: TO268HV Drain current: 120A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 122nC Kind of channel: enhanced Reverse recovery time: 140ns Drain-source voltage: 250V кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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IXFT120N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Power dissipation: 735W Polarisation: unipolar Gate charge: 170nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 145ns Drain-source voltage: 300V Drain current: 120A On-state resistance: 11mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 134 шт: термін постачання 14-21 дні (днів) |
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IXFT140N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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IXFT140N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns кількість в упаковці: 1 шт |
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IXFT14N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO268 On-state resistance: 720mΩ Mounting: SMD Gate charge: 61nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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IXFT150N17T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 175V Drain current: 150A Power dissipation: 880W Case: TO268 On-state resistance: 12mΩ Mounting: SMD Gate charge: 233nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFT150N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO268 On-state resistance: 15mΩ Mounting: SMD Gate charge: 177nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns кількість в упаковці: 1 шт |
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| IXFT150N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 250V Drain current: 150A Pulsed drain current: 300A Power dissipation: 735W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 140ns кількість в упаковці: 1 шт |
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IXFT150N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO268 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns кількість в упаковці: 1 шт |
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IXFT15N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO268 On-state resistance: 1.05Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT16N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Power dissipation: 660W Case: TO268 On-state resistance: 0.95Ω Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT16N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Power dissipation: 460W Case: TO268 On-state resistance: 0.6Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT170N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns Mounting: SMD Kind of package: tube Drain current: 170A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Case: TO268HV On-state resistance: 7.4mΩ Reverse recovery time: 140ns Power dissipation: 890W Gate charge: 0.19µC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class кількість в упаковці: 1 шт |
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IXFT180N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 180A Power dissipation: 780W Case: TO268 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 154nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 94ns кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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IXFT18N100Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Power dissipation: 830W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Drain-source voltage: 1kV Drain current: 18A On-state resistance: 0.66Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFT20N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: SMD Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXFT20N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhanced Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 86nC кількість в упаковці: 1 шт |
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IXFT220N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Case: TO268 Mounting: SMD Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A кількість в упаковці: 1 шт |
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IXFT24N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO268 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT24N90P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 24A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
на замовлення 296 шт: термін постачання 14-21 дні (днів) |
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IXFT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT30N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT30N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns Mounting: SMD Reverse recovery time: 160ns Power dissipation: 695W Features of semiconductor devices: ultra junction x-class Case: TO268HV Kind of package: tube Gate charge: 68nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 850V Type of transistor: N-MOSFET On-state resistance: 0.23Ω кількість в упаковці: 1 шт |
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IXFT320N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns кількість в упаковці: 1 шт |
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IXFT340N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns Mounting: SMD Case: TO268 Power dissipation: 935W Gate charge: 300nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 340A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 3.2mΩ Reverse recovery time: 75ns кількість в упаковці: 1 шт |
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IXFT36N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT36N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO268 On-state resistance: 0.19Ω Mounting: SMD Gate charge: 102nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT400N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns Case: TO268 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Power dissipation: 1kW Gate charge: 420nC Polarisation: unipolar Drain current: 400A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Reverse recovery time: 77ns кількість в упаковці: 1 шт |
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IXFT40N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 40A Power dissipation: 860W Case: TO268HV On-state resistance: 0.145Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFT42N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 42A Power dissipation: 830W Case: TO268 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 50A Power dissipation: 690W Case: TO268 On-state resistance: 80mΩ Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.16Ω Mounting: SMD Gate charge: 94nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 660W Case: TO268 On-state resistance: 73mΩ Mounting: SMD Gate charge: 116nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 195ns кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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IXFT50N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO268HV On-state resistance: 0.105Ω Mounting: SMD Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns кількість в упаковці: 1 шт |
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IXFT52N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO268 On-state resistance: 0.12Ω Mounting: SMD Gate charge: 113nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns кількість в упаковці: 1 шт |
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IXFT60N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 780W Case: TO268 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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| IXFT69N30P | IXYS |
IXFT69N30P SMD N channel transistors |
товар відсутній |
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IXFT70N20Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
товар відсутній |
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IXFT70N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
товар відсутній |
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IXFT80N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
товар відсутній |
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| IXFT86N30T | IXYS |
IXFT86N30T SMD N channel transistors |
товар відсутній |
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IXFT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IXFT94N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268 Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 102nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
товар відсутній |
| IXFR48N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFR64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR64N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR64N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 568W
Case: ISOPLUS247™
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 568W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 568W
Case: ISOPLUS247™
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR80N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR80N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2458.9 грн |
| 2+ | 2241.71 грн |
| IXFR80N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFR90N30 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 30 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 30 шт
товар відсутній
| IXFT100N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT120N15P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 814.32 грн |
| 2+ | 566.31 грн |
| 6+ | 515.72 грн |
| IXFT120N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Case: TO268HV
Drain current: 120A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 122nC
Kind of channel: enhanced
Reverse recovery time: 140ns
Drain-source voltage: 250V
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1087.32 грн |
| 2+ | 841.32 грн |
| 4+ | 765.73 грн |
| 30+ | 753.54 грн |
| IXFT120N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Power dissipation: 735W
Polarisation: unipolar
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Power dissipation: 735W
Polarisation: unipolar
Gate charge: 170nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 145ns
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 134 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1396.91 грн |
| 2+ | 1054.82 грн |
| 3+ | 960 грн |
| 300+ | 917.31 грн |
| IXFT140N10P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 732.7 грн |
| 2+ | 562.69 грн |
| 6+ | 512.23 грн |
| 30+ | 504.39 грн |
| IXFT140N20X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT14N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.31 грн |
| 3+ | 486.7 грн |
| 6+ | 443.41 грн |
| 30+ | 434.7 грн |
| IXFT150N17T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXFT150N20T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT150N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT150N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT15N100Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT16N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT16N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT170N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Mounting: SMD
Kind of package: tube
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Case: TO268HV
On-state resistance: 7.4mΩ
Reverse recovery time: 140ns
Power dissipation: 890W
Gate charge: 0.19µC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Mounting: SMD
Kind of package: tube
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Case: TO268HV
On-state resistance: 7.4mΩ
Reverse recovery time: 140ns
Power dissipation: 890W
Gate charge: 0.19µC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
кількість в упаковці: 1 шт
товар відсутній
| IXFT180N20X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 94ns
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1354.69 грн |
| 2+ | 1047.58 грн |
| 3+ | 953.9 грн |
| 30+ | 935.61 грн |
| IXFT18N100Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXFT20N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT20N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
кількість в упаковці: 1 шт
товар відсутній
| IXFT220N20X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
кількість в упаковці: 1 шт
товар відсутній
| IXFT24N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT24N90P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 296 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1291.84 грн |
| 2+ | 1005.06 грн |
| 3+ | 914.7 грн |
| 30+ | 885.95 грн |
| IXFT26N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT30N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT30N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT30N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFT320N10T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT340N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT36N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT36N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT400N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Power dissipation: 1kW
Gate charge: 420nC
Polarisation: unipolar
Drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Reverse recovery time: 77ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Power dissipation: 1kW
Gate charge: 420nC
Polarisation: unipolar
Drain current: 400A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Reverse recovery time: 77ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT40N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT42N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT44N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT44N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1077.94 грн |
| 2+ | 744.52 грн |
| 3+ | 716.08 грн |
| 4+ | 677.75 грн |
| IXFT50N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT52N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N60X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1042.29 грн |
| 2+ | 742.71 грн |
| 4+ | 676.01 грн |
| IXFT70N20Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT70N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT80N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT94N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній