Фото | Назва | Виробник | Інформація |
Доступність |
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IXFX34N80 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX360N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™ Case: PLUS247™ Polarisation: unipolar Power dissipation: 1.25kW Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 525nC Kind of channel: enhanced Mounting: THT Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXFX360N15T2 | IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Polarisation: unipolar Power dissipation: 1670W Kind of package: tube Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 360A On-state resistance: 4mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFX400N15X3 | IXYS |
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IXFX40N90P | IXYS |
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IXFX420N10T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 2.6mΩ Mounting: THT Gate charge: 670nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFX44N60 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 44A Power dissipation: 568W Case: PLUS247™ On-state resistance: 130mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced |
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IXFX44N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX44N80Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX48N60P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 830W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 300 шт |
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IXFX48N60Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX520N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Mounting: THT Case: PLUS247™ On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A кількість в упаковці: 1 шт |
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IXFX55N50 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Power dissipation: 520W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 330nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 300 шт |
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IXFX64N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX64N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX64N60P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 96mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX64N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 64A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX66N85X | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXFX74N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX78N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 78A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 68mΩ Mounting: THT Gate charge: 147nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX80N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX80N50Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 65mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX80N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX90N60X | IXYS |
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IXFX94N50P2 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXFX98N50P3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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IXFY26N30X3 | IXYS |
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IXFY30N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO252 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns кількість в упаковці: 1 шт |
на замовлення 70 шт: термін постачання 14-21 дні (днів) |
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IXFY36N20X3 | IXYS |
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на замовлення 323 шт: термін постачання 14-21 дні (днів) |
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IXFY4N60P3 | IXYS |
![]() Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 114W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 6.9nC Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXFY4N85X | IXYS |
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на замовлення 58 шт: термін постачання 14-21 дні (днів) |
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IXFY8N65X2 | IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 105ns кількість в упаковці: 1 шт |
на замовлення 170 шт: термін постачання 14-21 дні (днів) |
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IXFZ140N25T | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 445W Case: DE475 On-state resistance: 17mΩ Mounting: SMD Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFZ520N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475 Type of transistor: N-MOSFET Mounting: SMD Case: DE475 On-state resistance: 1.6mΩ Kind of package: tube Power dissipation: 600W Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 420A кількість в упаковці: 1 шт |
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IXG70IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 86A Case: SOT227B Electrical mounting: screw Technology: X2PT Features of semiconductor devices: integrated anti-parallel diode Mechanical mounting: screw кількість в упаковці: 1 шт |
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IXGA12N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Type of transistor: IGBT Power dissipation: 100W Kind of package: tube Case: TO263 Gate charge: 20.4nC Technology: GenX3™; PT Mounting: SMD кількість в упаковці: 1 шт |
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IXGA20N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs кількість в упаковці: 1 шт |
на замовлення 280 шт: термін постачання 14-21 дні (днів) |
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IXGA20N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns кількість в упаковці: 1 шт |
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IXGA24N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263 Case: TO263 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A кількість в упаковці: 1 шт |
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IXGA30N120B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns кількість в упаковці: 1 шт |
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IXGA42N30C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263 Case: TO263 Mounting: SMD Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 84A Turn-on time: 21ns Turn-off time: 113ns Type of transistor: IGBT Power dissipation: 223W Gate charge: 76nC Technology: GenX3™ Collector-emitter voltage: 300V кількість в упаковці: 1 шт |
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IXGA48N60A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns кількість в упаковці: 1 шт |
на замовлення 180 шт: термін постачання 14-21 дні (днів) |
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IXGF20N300 | IXYS |
![]() Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c Mounting: THT Case: ISOPLUS i4-pac™ x024c Kind of package: tube Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 14A Pulsed collector current: 103A Turn-on time: 524ns Turn-off time: 355ns Type of transistor: IGBT Power dissipation: 100W Features of semiconductor devices: high voltage Gate charge: 31nC Technology: NPT кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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IXGF32N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 19A Power dissipation: 200W Case: ISOPLUS i4-pac™ x024c Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 146nC Kind of package: tube Turn-on time: 90ns Turn-off time: 920ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH10N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 10A Power dissipation: 110W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 0.3µs Turn-off time: 630ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH10N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 5A Power dissipation: 140W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 29nC Kind of package: tube Turn-on time: 107ns Turn-off time: 240ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
на замовлення 45 шт: термін постачання 14-21 дні (днів) |
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IXGH120N30B3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 120A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 51ns Turn-off time: 356ns кількість в упаковці: 1 шт |
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IXGH120N30C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 300V Collector current: 120A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 66ns Turn-off time: 233ns кількість в упаковці: 1 шт |
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IXGH12N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns кількість в упаковці: 1 шт |
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IXGH16N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 16A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 78nC Kind of package: tube Turn-on time: 90ns Turn-off time: 1.6µs Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH16N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 11A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 35ns Turn-off time: 298ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH20N120A3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs кількість в упаковці: 1 шт |
на замовлення 161 шт: термін постачання 14-21 дні (днів) |
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IXGH24N120C3 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns кількість в упаковці: 1 шт |
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IXGH24N120C3H1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT; Sonic FRD™ Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 51ns Turn-off time: 430ns кількість в упаковці: 1 шт |
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IXGH24N170 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 105ns Turn-off time: 560ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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IXGH24N170A | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
товар відсутній |
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IXGH25N160 | IXYS |
![]() Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.6kV Collector current: 25A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-on time: 283ns Turn-off time: 526ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
товар відсутній |
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IXGH25N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH28N60B3D1 | IXYS |
![]() Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3 Type of transistor: IGBT Technology: PolarHV™; PT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns кількість в упаковці: 1 шт |
товар відсутній |
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IXGH2N250 | IXYS |
![]() Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 2A Power dissipation: 32W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 13.5A Mounting: THT Gate charge: 10.5nC Kind of package: tube Turn-on time: 115ns Turn-off time: 278ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
на замовлення 287 шт: термін постачання 14-21 дні (днів) |
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IXFX34N80 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX360N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhanced
Mounting: THT
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 525nC
Kind of channel: enhanced
Mounting: THT
Drain-source voltage: 100V
Drain current: 360A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1138.02 грн |
2+ | 783.32 грн |
4+ | 713.47 грн |
IXFX360N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1670W
Kind of package: tube
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 360A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Polarisation: unipolar
Power dissipation: 1670W
Kind of package: tube
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 360A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXFX420N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFX44N60 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 44A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 44A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 44A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 130mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX44N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX44N80Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX48N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 300 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 300 шт
товар відсутній
IXFX48N60Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX520N075T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
кількість в упаковці: 1 шт
товар відсутній
IXFX55N50 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 300 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 55A; 520W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Power dissipation: 520W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 300 шт
товар відсутній
IXFX64N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX64N50Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX64N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX64N60P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX66N85X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFX74N50P2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX78N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX80N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX80N50Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX80N60P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX94N50P2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFX98N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1519.85 грн |
2+ | 1043.23 грн |
3+ | 949.84 грн |
IXFY30N25X3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.51 грн |
4+ | 341.12 грн |
9+ | 311.11 грн |
IXFY36N20X3 |
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Виробник: IXYS
IXFY36N20X3 SMD N channel transistors
IXFY36N20X3 SMD N channel transistors
на замовлення 323 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 320.07 грн |
5+ | 202.48 грн |
14+ | 192.05 грн |
IXFY4N60P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFY4N85X |
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Виробник: IXYS
IXFY4N85X SMD N channel transistors
IXFY4N85X SMD N channel transistors
на замовлення 58 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 248.94 грн |
6+ | 175.54 грн |
16+ | 165.98 грн |
IXFY8N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
кількість в упаковці: 1 шт
на замовлення 170 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 192.79 грн |
5+ | 165.15 грн |
8+ | 143.39 грн |
20+ | 135.57 грн |
70+ | 132.96 грн |
IXFZ140N25T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFZ520N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Mounting: SMD
Case: DE475
On-state resistance: 1.6mΩ
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 420A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Mounting: SMD
Case: DE475
On-state resistance: 1.6mΩ
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 420A
кількість в упаковці: 1 шт
товар відсутній
IXG70IF1200NA |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXGA12N120A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IXGA20N120A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 467 грн |
3+ | 405.2 грн |
4+ | 311.11 грн |
9+ | 293.73 грн |
IXGA20N120B3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
товар відсутній
IXGA24N120C3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
кількість в упаковці: 1 шт
товар відсутній
IXGA30N120B3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
кількість в упаковці: 1 шт
товар відсутній
IXGA42N30C3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Case: TO263
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO263
Case: TO263
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 84A
Turn-on time: 21ns
Turn-off time: 113ns
Type of transistor: IGBT
Power dissipation: 223W
Gate charge: 76nC
Technology: GenX3™
Collector-emitter voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
IXGA48N60A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 401.49 грн |
3+ | 348.34 грн |
4+ | 272.87 грн |
11+ | 257.23 грн |
IXGF20N300 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 103A
Turn-on time: 524ns
Turn-off time: 355ns
Type of transistor: IGBT
Power dissipation: 100W
Features of semiconductor devices: high voltage
Gate charge: 31nC
Technology: NPT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 3kV; 14A; 100W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 103A
Turn-on time: 524ns
Turn-off time: 355ns
Type of transistor: IGBT
Power dissipation: 100W
Features of semiconductor devices: high voltage
Gate charge: 31nC
Technology: NPT
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3406.57 грн |
IXGF32N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 19A
Power dissipation: 200W
Case: ISOPLUS i4-pac™ x024c
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 146nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH10N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 110W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 630ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 110W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 630ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH10N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 5A
Power dissipation: 140W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 240ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 633.58 грн |
3+ | 485.52 грн |
6+ | 441.46 грн |
30+ | 436.25 грн |
IXGH120N30B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
кількість в упаковці: 1 шт
товар відсутній
IXGH120N30C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
кількість в упаковці: 1 шт
товар відсутній
IXGH12N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH16N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH20N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
кількість в упаковці: 1 шт
на замовлення 161 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 629.84 грн |
3+ | 396.17 грн |
8+ | 360.64 грн |
300+ | 352.82 грн |
1020+ | 346.74 грн |
IXGH24N120C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N120C3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT; Sonic FRD™
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
товар відсутній
IXGH24N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1281.21 грн |
3+ | 1168.67 грн |
30+ | 1106.26 грн |
IXGH24N170A |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH25N160 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH25N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXGH28N60B3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXGH2N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 287 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1262.49 грн |
2+ | 965.62 грн |
3+ | 878.58 грн |
30+ | 867.28 грн |