Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXBOD1-32RD | IXYS |
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IXBOD1-34R | IXYS |
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IXBOD1-36R | IXYS |
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на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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IXBOD1-38R | IXYS |
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IXBOD1-40R | IXYS |
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IXBOD1-42R | IXYS |
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IXBOD2-04 | IXYS |
![]() Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 400V |
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IXBOD2-06 | IXYS |
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IXBOD2-07 | IXYS |
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IXBOD2-08 | IXYS |
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IXBOD2-09 | IXYS |
![]() Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 900V Kind of package: bulk Case: FP-Case Mounting: THT Technology: 2nd Gen Breakover voltage: 900V Type of thyristor: BOD Max. load current: 0.9A кількість в упаковці: 1 шт |
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IXBOD2-10 | IXYS |
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IXBOD2-11 | IXYS |
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IXBOD2-12 | IXYS |
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IXBOD2-13 | IXYS |
![]() Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.3kV кількість в упаковці: 1 шт |
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IXBOD2-14 | IXYS |
![]() Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 1.4kV кількість в упаковці: 1 шт |
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IXBOD2-15R | IXYS | IXBOD2-15R Thyristors - others |
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IXBOD2-50R | IXYS |
![]() Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5kV кількість в упаковці: 1 шт |
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IXBOD2-56R | IXYS |
![]() Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV Type of thyristor: BOD x4 Max. load current: 0.9A Case: BOD Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 5.6kV кількість в упаковці: 1 шт |
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IXBT10N170 | IXYS |
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на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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IXBT12N300HV | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268 Case: TO268 Mounting: SMD Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 98A Turn-on time: 64ns Turn-off time: 180ns Type of transistor: IGBT Power dissipation: 160W Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™ Collector-emitter voltage: 3kV кількість в упаковці: 300 шт |
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IXBT16N170A | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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IXBT16N170AHV | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV Technology: BiMOSFET™ Mounting: SMD Case: TO268HV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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IXBT24N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Turn-off time: 1285ns Turn-on time: 190ns Pulsed collector current: 230A Power dissipation: 250W Collector current: 24A Features of semiconductor devices: high voltage Gate charge: 0.14µC Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV кількість в упаковці: 1 шт |
на замовлення 23 шт: термін постачання 14-21 дні (днів) |
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IXBT2N250 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Type of transistor: IGBT Power dissipation: 32W Features of semiconductor devices: high voltage Gate charge: 10.6nC Technology: BiMOSFET™ Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13A Turn-on time: 310ns Turn-off time: 252ns кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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IXBT42N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: D3PAK Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXBT42N170A | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 21A Power dissipation: 357W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 265A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 33ns Turn-off time: 308ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXBT42N300HV | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Gate-emitter voltage: ±20V Collector current: 42A Pulsed collector current: 400A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Power dissipation: 500W Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector-emitter voltage: 3kV кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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IXBT6N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 1.7kV Power dissipation: 75W Gate charge: 17nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 36A Type of transistor: IGBT Turn-on time: 104ns Kind of package: tube Case: D3PAK Turn-off time: 700ns кількість в упаковці: 1 шт |
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IXBX25N250 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™ Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 300W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 103nC Kind of package: tube Turn-on time: 694ns Turn-off time: 650ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXBX50N360HV | IXYS |
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IXBX75N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.7kV Power dissipation: 1.04kW Gate charge: 350nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 277ns Kind of package: tube Case: PLUS247™ Turn-off time: 840ns кількість в упаковці: 1 шт |
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IXBX75N170A | IXYS |
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на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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IXCP10M45S | IXYS |
![]() Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA Operating temperature: -55...150°C Type of integrated circuit: driver Operating current: 2...100mA Power dissipation: 40W Case: TO220AB Mounting: THT Kind of integrated circuit: current regulator Operating voltage: 450V кількість в упаковці: 1 шт |
на замовлення 198 шт: термін постачання 14-21 дні (днів) |
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IXCP10M90S | IXYS |
![]() Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO220AB Mounting: THT Operating temperature: -55...150°C Operating voltage: 900V Power dissipation: 40W Operating current: 2...100mA кількість в упаковці: 1 шт |
на замовлення 156 шт: термін постачання 14-21 дні (днів) |
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IXCY10M45S | IXYS |
![]() Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA Operating temperature: -55...150°C Type of integrated circuit: driver Operating current: 2...100mA Power dissipation: 40W Case: TO252 Mounting: SMD Kind of integrated circuit: current regulator Operating voltage: 450V кількість в упаковці: 1 шт |
на замовлення 171 шт: термін постачання 14-21 дні (днів) |
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IXCY10M90S | IXYS |
![]() Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO252 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 900V Power dissipation: 40W Operating current: 2...100mA кількість в упаковці: 1 шт |
на замовлення 297 шт: термін постачання 14-21 дні (днів) |
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IXDD604D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 112 шт: термін постачання 14-21 дні (днів) |
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IXDD604PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 164 шт: термін постачання 14-21 дні (днів) |
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IXDD604SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 291 шт: термін постачання 14-21 дні (днів) |
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IXDD604SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 867 шт: термін постачання 14-21 дні (днів) |
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IXDD604SIATR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 2000 шт |
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IXDD604SITR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 2000 шт |
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IXDD609CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 882 шт: термін постачання 14-21 дні (днів) |
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IXDD609D2TR | IXYS |
![]() Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 14-21 дні (днів) |
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IXDD609PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: DIP8 Mounting: THT Supply voltage: 4.5...35V Operating temperature: -40...125°C Kind of package: tube Output current: -9...9A Number of channels: 1 Kind of integrated circuit: gate driver; low-side Turn-on time: 115ns Turn-off time: 105ns Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 504 шт: термін постачання 14-21 дні (днів) |
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IXDD609SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 856 шт: термін постачання 14-21 дні (днів) |
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IXDD609SIA | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 540 шт: термін постачання 14-21 дні (днів) |
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IXDD609SIATR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 2000 шт |
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IXDD609SITR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 2000 шт |
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IXDD609YI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 888 шт: термін постачання 14-21 дні (днів) |
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IXDD614CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 885 шт: термін постачання 14-21 дні (днів) |
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IXDD614PI | IXYS |
![]() Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 1084 шт: термін постачання 14-21 дні (днів) |
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IXDD614SI | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 802 шт: термін постачання 14-21 дні (днів) |
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IXDD614SITR | IXYS |
![]() Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 2000 шт |
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IXDD614YI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 649 шт: термін постачання 14-21 дні (днів) |
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IXDD630CI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 244 шт: термін постачання 14-21 дні (днів) |
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IXDD630MCI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXDD630MYI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXDD630YI | IXYS |
![]() Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
IXBOD1-36R |
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Виробник: IXYS
IXBOD1-36R Thyristors - others
IXBOD1-36R Thyristors - others
на замовлення 20 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7084.12 грн |
IXBOD2-04 |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
IXBOD2-09 |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 900V
Kind of package: bulk
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 900V
Type of thyristor: BOD
Max. load current: 0.9A
кількість в упаковці: 1 шт
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 900V
Kind of package: bulk
Case: FP-Case
Mounting: THT
Technology: 2nd Gen
Breakover voltage: 900V
Type of thyristor: BOD
Max. load current: 0.9A
кількість в упаковці: 1 шт
товар відсутній
IXBOD2-13 |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
кількість в упаковці: 1 шт
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.3kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.3kV
кількість в упаковці: 1 шт
товар відсутній
IXBOD2-14 |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
кількість в упаковці: 1 шт
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 1.4kV
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 1.4kV
кількість в упаковці: 1 шт
товар відсутній
IXBOD2-50R |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
кількість в упаковці: 1 шт
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
IXBOD2-56R |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
кількість в упаковці: 1 шт
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.9A; BOD; THT; bulk; 2nd Gen; 5.6kV
Type of thyristor: BOD x4
Max. load current: 0.9A
Case: BOD
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 5.6kV
кількість в упаковці: 1 шт
товар відсутній
IXBT10N170 |
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Виробник: IXYS
IXBT10N170 SMD IGBT transistors
IXBT10N170 SMD IGBT transistors
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 866.85 грн |
2+ | 689.07 грн |
5+ | 651.61 грн |
IXBT12N300HV |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Power dissipation: 160W
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
кількість в упаковці: 300 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Power dissipation: 160W
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
кількість в упаковці: 300 шт
товар відсутній
IXBT16N170A |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1100.45 грн |
3+ | 1003.25 грн |
30+ | 952.16 грн |
IXBT16N170AHV |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1100.45 грн |
3+ | 1003.25 грн |
30+ | 952.16 грн |
IXBT24N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2039.54 грн |
2+ | 1859.95 грн |
10+ | 1771.03 грн |
30+ | 1727.47 грн |
IXBT2N250 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 32W
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Type of transistor: IGBT
Power dissipation: 32W
Features of semiconductor devices: high voltage
Gate charge: 10.6nC
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 2A
Pulsed collector current: 13A
Turn-on time: 310ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1479.47 грн |
3+ | 1348.83 грн |
10+ | 1283.19 грн |
30+ | 1245.73 грн |
IXBT42N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXBT42N170A |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 357W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 308ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXBT42N300HV |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Power dissipation: 500W
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Power dissipation: 500W
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4043.44 грн |
30+ | 3748.86 грн |
IXBT6N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
кількість в упаковці: 1 шт
товар відсутній
IXBX25N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 25A; 300W; PLUS247™
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 300W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Turn-on time: 694ns
Turn-off time: 650ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXBX75N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
кількість в упаковці: 1 шт
товар відсутній
IXBX75N170A |
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Виробник: IXYS
IXBX75N170A THT IGBT transistors
IXBX75N170A THT IGBT transistors
на замовлення 8 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4375.74 грн |
IXCP10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V
кількість в упаковці: 1 шт
на замовлення 198 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.03 грн |
3+ | 197.21 грн |
7+ | 150.71 грн |
19+ | 142.87 грн |
IXCP10M90S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
кількість в упаковці: 1 шт
на замовлення 156 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 291.77 грн |
3+ | 248.78 грн |
5+ | 214.3 грн |
13+ | 202.98 грн |
50+ | 200.36 грн |
IXCY10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V
кількість в упаковці: 1 шт
на замовлення 171 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.96 грн |
5+ | 184.55 грн |
8+ | 142 грн |
20+ | 134.16 грн |
IXCY10M90S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
кількість в упаковці: 1 шт
на замовлення 297 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 323.66 грн |
5+ | 224.35 грн |
13+ | 204.72 грн |
IXDD604D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 112 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.96 грн |
5+ | 105.84 грн |
12+ | 89.73 грн |
31+ | 85.37 грн |
100+ | 84.5 грн |
IXDD604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 164 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.22 грн |
10+ | 102.79 грн |
11+ | 92.34 грн |
31+ | 87.11 грн |
250+ | 86.24 грн |
IXDD604SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 291 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.16 грн |
5+ | 192.69 грн |
7+ | 167.26 грн |
17+ | 158.55 грн |
100+ | 155.93 грн |
IXDD604SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 867 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 136.03 грн |
5+ | 117.6 грн |
11+ | 94.08 грн |
30+ | 88.86 грн |
IXDD604SIATR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 2000 шт
товар відсутній
IXDD604SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 2000 шт
товар відсутній
IXDD609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 882 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 243.92 грн |
5+ | 208.07 грн |
6+ | 182.07 грн |
10+ | 180.33 грн |
16+ | 171.61 грн |
50+ | 168.13 грн |
IXDD609D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 121.02 грн |
5+ | 102.23 грн |
12+ | 87.99 грн |
32+ | 82.76 грн |
100+ | 81.89 грн |
500+ | 80.14 грн |
IXDD609PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Supply voltage: 4.5...35V
Operating temperature: -40...125°C
Kind of package: tube
Output current: -9...9A
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Turn-on time: 115ns
Turn-off time: 105ns
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: DIP8
Mounting: THT
Supply voltage: 4.5...35V
Operating temperature: -40...125°C
Kind of package: tube
Output current: -9...9A
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
Turn-on time: 115ns
Turn-off time: 105ns
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 504 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 114.89 грн |
10+ | 98.44 грн |
12+ | 88.86 грн |
32+ | 84.5 грн |
250+ | 81.89 грн |
IXDD609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 856 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 200.76 грн |
5+ | 170.98 грн |
7+ | 148.97 грн |
19+ | 141.12 грн |
100+ | 138.51 грн |
IXDD609SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 540 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.15 грн |
5+ | 102.23 грн |
12+ | 88.86 грн |
32+ | 84.5 грн |
100+ | 81.89 грн |
IXDD609SIATR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 2000 шт
товар відсутній
IXDD609SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 2000 шт
товар відсутній
IXDD609YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 888 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 272.06 грн |
3+ | 235.21 грн |
6+ | 188.17 грн |
15+ | 177.71 грн |
IXDD614CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 885 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 389.33 грн |
3+ | 332.01 грн |
4+ | 300.54 грн |
10+ | 283.99 грн |
50+ | 272.67 грн |
IXDD614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 1084 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.89 грн |
5+ | 172.79 грн |
8+ | 133.28 грн |
22+ | 125.44 грн |
IXDD614SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 802 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 304.9 грн |
5+ | 235.21 грн |
13+ | 214.3 грн |
100+ | 209.07 грн |
IXDD614SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 2000 шт
товар відсутній
IXDD614YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 649 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 432.49 грн |
3+ | 375.43 грн |
4+ | 304.03 грн |
10+ | 287.48 грн |
250+ | 276.15 грн |
IXDD630CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 244 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 788.05 грн |
2+ | 547.31 грн |
6+ | 498.29 грн |
IXDD630MCI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
товар відсутній
IXDD630MYI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
товар відсутній
IXDD630YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
товар відсутній