![IXFN32N100Q3 IXFN32N100Q3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/408/IXYN82N120C3H1.jpg)
IXFN32N100Q3 IXYS
![littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n100q3_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 1000V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 4205.85 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFN32N100Q3 IXYS
Description: MOSFET N-CH 1000V 28A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V.
Інші пропозиції IXFN32N100Q3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IXFN32N100Q3 | Виробник : Littelfuse |
![]() |
товар відсутній |
|
![]() |
IXFN32N100Q3 | Виробник : IXYS |
![]() Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 96A Power dissipation: 780W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 195nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
|
![]() |
IXFN32N100Q3 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXFN32N100Q3 | Виробник : IXYS |
![]() Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 96A Power dissipation: 780W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 195nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
товар відсутній |