на замовлення 559 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3961.25 грн |
| 10+ | 3479.09 грн |
| 20+ | 2845.5 грн |
| 50+ | 2750.72 грн |
| 100+ | 2655.24 грн |
| 200+ | 2637.12 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFN80N50Q3 IXYS
Description: MOSFET N-CH 500V 63A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V.
Інші пропозиції IXFN80N50Q3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFN80N50Q3 | Виробник : Littelfuse |
 Trans MOSFET N-CH 500V 63A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN80N50Q3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXFN80N50Q3 | Виробник : Littelfuse |
Trans MOSFET N-CH 500V 63A 4-Pin SOT-227B |
товар відсутній |
|
 |
IXFN80N50Q3 | Виробник : IXYS |
Description: MOSFET N-CH 500V 63A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V |
товар відсутній |
|
|
|
IXFN80N50Q3 | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |