| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXBF32N300 | IXYS |
 Description: IGBT 3000V 40A 160W ISOPLUSI4 |
товар відсутній |
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IXBT12N300 | IXYS |
Description: IGBT 3000V 30A 160W TO268 |
товар відсутній |
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IXBF12N300 | IXYS |
Description: IGBT 3000V 26A 125W ISOPLUSI4 |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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IXBK55N300 | IXYS |
Description: IGBT 3000V 130A 625W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.9 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A Supplier Device Package: TO-264AA Gate Charge: 335 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 600 A Power - Max: 625 W |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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IXBT20N300 | IXYS |
Description: IGBT 3000V 50A 250W TO268 |
товар відсутній |
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IXBH20N300 | IXYS |
Description: IGBT 3000V 50A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.35 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Supplier Device Package: TO-247AD Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 140 A Power - Max: 250 W |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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IXBH32N300 | IXYS |
Description: IGBT 3000V 80A 400W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A Supplier Device Package: TO-247AD Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 280 A Power - Max: 400 W |
на замовлення 370 шт: термін постачання 21-31 дні (днів) |
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IXBT32N300 | IXYS |
Description: IGBT 3000V 80A 400W TO268 |
товар відсутній |
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.jpg "IXBX55N300") |
IXBX55N300 | IXYS |
Description: IGBT 3000V 130A 625W PLUS247 |
товар відсутній |
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LDS8866002-T2-300 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LDS8866002-T2-300 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
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LDS8620-002-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LDS8641-008-T2 | IXYS | Description: IC LED DRIVER RGLTR DIM 16TQFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LDS8641-008-T2 | IXYS | Description: IC LED DRIVER RGLTR DIM 16TQFN |
на замовлення 1957 шт: термін постачання 21-31 дні (днів) |
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LDS8865002-T2-250 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
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LDS8641-008-T2 | IXYS | Description: IC LED DRIVER RGLTR DIM 16TQFN |
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LDS8865002-T2-250 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LDS8845-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 30MA 16TQFN |
на замовлення 23077 шт: термін постачання 21-31 дні (днів) |
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LDS8866002-T2-300 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8845-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 30MA 16TQFN |
на замовлення 23077 шт: термін постачання 21-31 дні (днів) |
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LDS8865002-T2-250 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8620-002-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8845-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 30MA 16TQFN |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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LDS8620-002-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8681008-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
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LDS8141-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 32MA 16TQFN |
товар відсутній |
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LDS8681008-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8160-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 25MA 16TQFN |
товар відсутній |
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LDS8681008-T2 | IXYS |
Description: IC LED DRIVER RGLTR DIM 16TQFN |
товар відсутній |
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LDS8680008-T2 | IXYS |
Description: IC LED DRIVER RGLTR 400MA 8TDFN |
на замовлення 4348 шт: термін постачання 21-31 дні (днів) |
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LDS8680008-T2 | IXYS |
Description: IC LED DRIVER RGLTR 400MA 8TDFN |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LDS8680008-T2 | IXYS |
Description: IC LED DRIVER RGLTR 400MA 8TDFN |
на замовлення 4348 шт: термін постачання 21-31 дні (днів) |
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LDS8141-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 32MA 16TQFN |
товар відсутній |
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LDS8160-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 25MA 16TQFN |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LDS8160-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 25MA 16TQFN |
на замовлення 872 шт: термін постачання 21-31 дні (днів) |
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LDS8141-002-T2 | IXYS |
Description: IC LED DRVR LIN DIM 32MA 16TQFN |
товар відсутній |
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IRFP260 | IXYS |
Description: MOSFET N-CH 200V 46A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товар відсутній |
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IXFB170N30P | IXYS |
Description: MOSFET N-CH 300V 170A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
товар відсутній |
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IXFB52N90P | IXYS |
Description: MOSFET N-CH 900V 52A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS264™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
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.jpg "IXFR16N80P") |
IXFR16N80P | IXYS | Description: MOSFET N-CH ISOPLUS247 |
товар відсутній |
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IXFR40N90P | IXYS |
Description: MOSFET N-CH 900V 21A ISOPLUS247 |
товар відсутній |
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.jpg "IXFX170N20P") |
IXFX170N20P | IXYS |
Description: MOSFET N-CH 200V 170A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IXFX40N90P | IXYS |
Description: MOSFET N-CH 900V 40A PLUS247-3 |
на замовлення 720 шт: термін постачання 21-31 дні (днів) |
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IXGB200N60B3 | IXYS |
Description: IGBT 600V 75A 1250W PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: PLUS264™ IGBT Type: PT Td (on/off) @ 25°C: 44ns/310ns Switching Energy: 1.6mJ (on), 2.9mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 1250 W |
товар відсутній |
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| IXTC62N15P | IXYS |
Description: MOSFET N-CH ISOPLUS-220 |
товар відсутній |
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IXTP18N60PM | IXYS |
Description: MOSFET N-CH 600V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
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IXTQ28N15P | IXYS |
Description: MOSFET N-CH TO-3P |
товар відсутній |
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IXTR62N15P | IXYS |
Description: MOSFET N-CH 150V 36A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
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IXTU2N80P | IXYS |
Description: MOSFET N-CH TO-251 |
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IXTY4N60P | IXYS |
Description: MOSFET N-CH 600V 4A TO252 |
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| IXTV02N250S | IXYS |
Description: MOSFET N-CH 2500V .2A PLUS220 |
товар відсутній |
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IXFN240N15T2 | IXYS |
Description: MOSFET N-CH 150V 240A SOT227B |
товар відсутній |
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IXFN320N17T2 | IXYS |
Description: MOSFET N-CH 170V 260A SOT227 |
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IXFN40N90P | IXYS |
Description: MOSFET N-CH 900V 33A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
товар відсутній |
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IXFN52N90P | IXYS |
Description: MOSFET N-CH 900V 43A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
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.jpg "IXFR18N90P") |
IXFR18N90P | IXYS |
Description: MOSFET N-CH 900V 10.5A ISOPLS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V |
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IXFT18N90P | IXYS |
Description: MOSFET N-CH 900V 18A TO268 |
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IXFV12N90P | IXYS |
Description: MOSFET N-CH 900V 12A PLUS220 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: PLUS220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
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IXFV18N90P | IXYS |
Description: MOSFET N-CH 900V 18A PLUS220 |
товар відсутній |
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IXFX240N15T2 | IXYS |
Description: MOSFET N-CH 150V 240A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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| IXBF12N300 |
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Виробник: IXYS
Description: IGBT 3000V 26A 125W ISOPLUSI4
Description: IGBT 3000V 26A 125W ISOPLUSI4
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| IXBK55N300 |
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Виробник: IXYS
Description: IGBT 3000V 130A 625W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
Description: IGBT 3000V 130A 625W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7292.96 грн |
| 25+ | 6116.72 грн |
| 100+ | 5799.55 грн |
| IXBH20N300 |
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Виробник: IXYS
Description: IGBT 3000V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Description: IGBT 3000V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
на замовлення 169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2150.8 грн |
| 30+ | 2036.66 грн |
| IXBH32N300 |
|
Виробник: IXYS
Description: IGBT 3000V 80A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
Description: IGBT 3000V 80A 400W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
на замовлення 370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6687.6 грн |
| 30+ | 5609.16 грн |
| 120+ | 5318.31 грн |
| LDS8866002-T2-300 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| LDS8620-002-T2 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| LDS8641-008-T2 |
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| LDS8641-008-T2 |
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 1957 шт:
термін постачання 21-31 дні (днів)| LDS8865002-T2-250 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Description: IC LED DRIVER RGLTR DIM 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| LDS8845-002-T2 |
|
Виробник: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
Description: IC LED DRVR LIN DIM 30MA 16TQFN
на замовлення 23077 шт:
термін постачання 21-31 дні (днів)| LDS8845-002-T2 |
|
Виробник: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
Description: IC LED DRVR LIN DIM 30MA 16TQFN
на замовлення 23077 шт:
термін постачання 21-31 дні (днів)| LDS8845-002-T2 |
|
Виробник: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
Description: IC LED DRVR LIN DIM 30MA 16TQFN
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)| LDS8680008-T2 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR 400MA 8TDFN
Description: IC LED DRIVER RGLTR 400MA 8TDFN
на замовлення 4348 шт:
термін постачання 21-31 дні (днів)| LDS8680008-T2 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR 400MA 8TDFN
Description: IC LED DRIVER RGLTR 400MA 8TDFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| LDS8680008-T2 |
|
Виробник: IXYS
Description: IC LED DRIVER RGLTR 400MA 8TDFN
Description: IC LED DRIVER RGLTR 400MA 8TDFN
на замовлення 4348 шт:
термін постачання 21-31 дні (днів)| LDS8160-002-T2 |
|
Виробник: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
Description: IC LED DRVR LIN DIM 25MA 16TQFN
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| LDS8160-002-T2 |
|
Виробник: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
Description: IC LED DRVR LIN DIM 25MA 16TQFN
на замовлення 872 шт:
термін постачання 21-31 дні (днів)| IRFP260 |
Виробник: IXYS
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IXFB170N30P |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
товар відсутній
| IXFB52N90P |
|
Виробник: IXYS
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
| IXFX170N20P |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 1331.24 грн |
| IXFX40N90P |
|
Виробник: IXYS
Description: MOSFET N-CH 900V 40A PLUS247-3
Description: MOSFET N-CH 900V 40A PLUS247-3
на замовлення 720 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1961.58 грн |
| 10+ | 1741.85 грн |
| 100+ | 1487.38 грн |
| 500+ | 1267.28 грн |
| IXGB200N60B3 |
|
Виробник: IXYS
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
товар відсутній
| IXTP18N60PM |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товар відсутній
| IXTR62N15P |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
| IXFN40N90P |
|
Виробник: IXYS
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Description: MOSFET N-CH 900V 33A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
товар відсутній
| IXFN52N90P |
Виробник: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товар відсутній
| IXFR18N90P |
|
Виробник: IXYS
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Description: MOSFET N-CH 900V 10.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
товар відсутній
| IXFV12N90P |
|
Виробник: IXYS
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
товар відсутній
| IXFX240N15T2 |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1495.68 грн |