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IXFK300N20X3 IXFK300N20X3 IXYS IXF_300N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+2241.25 грн
2+ 2043.6 грн
IXFK320N17T2 IXFK320N17T2 IXYS IXFK(X)320N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFK32N100P IXFK32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N100Q3 IXFK32N100Q3 IXYS IXF_32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N80P IXFK32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N80Q3 IXFK32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
1+1827.52 грн
2+ 1666.36 грн
3+ 1603.77 грн
25+ 1596.8 грн
IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
товар відсутній
IXFK34N80 IXFK34N80 IXYS IXFK(X)34N80.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK360N10T IXFK360N10T IXYS IXFK(X)360N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFK360N15T2 IXFK360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
товар відсутній
IXFK36N60P IXFK36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
1+944.72 грн
2+ 726.43 грн
4+ 661.2 грн
25+ 649 грн
IXFK400N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf.pdf IXFK400N15X3 THT N channel transistors
товар відсутній
IXFK40N90P IXFK40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Gate charge: 230nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
товар відсутній
IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
1+1210.22 грн
3+ 1103.67 грн
25+ 1059.31 грн
IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Mounting: THT
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
кількість в упаковці: 1 шт
товар відсутній
IXFK44N80P IXFK44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK44N80Q3 IXFK44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)
1+2693.43 грн
IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
300+1055.42 грн
Мінімальне замовлення: 300
IXFK48N60Q3 IXFK48N60Q3 IXYS IXFK(X)48N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
1+1877.24 грн
2+ 1711.59 грн
25+ 1596.8 грн
IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 300 шт
товар відсутній
IXFK520N075T2 IXFK520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
кількість в упаковці: 1 шт
товар відсутній
IXFK52N100X IXFK52N100X IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
кількість в упаковці: 1 шт
товар відсутній
IXFK64N50P IXFK64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N50Q3 IXFK64N50Q3 IXYS IXFK(X)64N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N60P IXFK64N60P IXYS IXFK(X)64N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
1+1184.89 грн
2+ 823.23 грн
4+ 750.05 грн
IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
1+2490.79 грн
2+ 2271.57 грн
3+ 2186.56 грн
25+ 2143.01 грн
IXFK66N85X IXFK66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFK78N50P3 IXFK78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
1+1448.51 грн
3+ 1320.78 грн
IXFK80N50P IXFK80N50P IXYS IXFK(X)80N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
1+1425.99 грн
3+ 1300.88 грн
25+ 1241.38 грн
IXFK80N50Q3 IXFK80N50Q3 IXYS IXFK(X)80N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)
1+1523.56 грн
2+ 1057.53 грн
3+ 962.61 грн
IXFK80N65X2 IXFK80N65X2 IXYS IXF_80N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
1+1477.59 грн
3+ 1347.02 грн
25+ 1274.48 грн
IXFK88N30P IXFK88N30P IXYS IXFH(K,T)88N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
1+1369.7 грн
2+ 892.89 грн
4+ 812.77 грн
IXFK90N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_90n60x_datasheet.pdf.pdf IXFK90N60X THT N channel transistors
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
1+1194.33 грн
3+ 1129 грн
IXFK94N50P2 IXFK94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
1+1237.42 грн
3+ 1129 грн
IXFK98N50P3 IXFK98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFL100N50P IXFL100N50P IXYS IXFL100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFL210N30P3 IXFL210N30P3 IXYS IXFL210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+2330.37 грн
2+ 2125.02 грн
IXFL32N120P IXFL32N120P IXYS IXFL32N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
1+4107.23 грн
25+ 3884.55 грн
IXFL38N100P IXFL38N100P IXYS IXFL38N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Case: ISOPLUS i5-pac™
Kind of package: tube
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 0.35µC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
1+2368.83 грн
2+ 2160.3 грн
25+ 2043.7 грн
IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
1+1482.28 грн
3+ 1351.54 грн
25+ 1274.48 грн
IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 80mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
1+2190.59 грн
2+ 1997.46 грн
IXFN100N50P IXFN100N50P IXYS 99497.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN100N50Q3 IXFN100N50Q3 IXYS IXFN100N50Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN100N65X2 IXFN100N65X2 IXYS IXFN100N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN102N30P IXFN102N30P IXYS IXFN102N30P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Case: SOT227B
Drain current: 86A
On-state resistance: 33mΩ
Power dissipation: 570W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 224nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 250A
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
1+6097.99 грн
IXFN120N65X2 IXFN120N65X2 IXYS IXFN120N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
1+3354.83 грн
IXFN130N90SK IXFN130N90SK IXYS Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Pulsed drain current: 330A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN140N20P IXFN140N20P IXYS IXFN140N20P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN140N25T IXFN140N25T IXYS IXFN140N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 300 шт
товар відсутній
IXFN140N30P IXFN140N30P IXYS IXFN140N30P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 300A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
IXFN150N65X2 IXFN150N65X2 IXYS IXFN150N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN160N30T IXFN160N30T IXYS IXFN160N30T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN170N25X3 IXFN170N25X3 IXYS IXFN170N25X3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
1+2428.88 грн
2+ 2214.58 грн
IXFK300N20X3 IXF_300N20X3.pdf 200VProductBrief.pdf
IXFK300N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Mounting: THT
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2241.25 грн
2+ 2043.6 грн
IXFK320N17T2 IXFK(X)320N17T2.pdf
IXFK320N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFK32N100P IXFK(X)32N100P.pdf
IXFK32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N100Q3 IXF_32N100Q3.pdf
IXFK32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N80P IXFK(X)32N80P.pdf
IXFK32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK32N80Q3 IXFK(X)32N80Q3.pdf
IXFK32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1827.52 грн
2+ 1666.36 грн
3+ 1603.77 грн
25+ 1596.8 грн
IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
товар відсутній
IXFK34N80 IXFK(X)34N80.pdf
IXFK34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK360N10T IXFK(X)360N10T.pdf
IXFK360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
IXFK360N15T2 IXFK(X)360N15T2.pdf
IXFK360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1670W
Polarisation: unipolar
Drain current: 360A
Reverse recovery time: 150ns
Gate charge: 715nC
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Drain-source voltage: 150V
кількість в упаковці: 1 шт
товар відсутній
IXFK36N60P IXFH(K,T)36N60P.pdf
IXFK36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+944.72 грн
2+ 726.43 грн
4+ 661.2 грн
25+ 649 грн
IXFK400N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf.pdf
Виробник: IXYS
IXFK400N15X3 THT N channel transistors
товар відсутній
IXFK40N90P IXFK(X)40N90P.pdf
IXFK40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Gate charge: 230nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
товар відсутній
IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1670W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1210.22 грн
3+ 1103.67 грн
25+ 1059.31 грн
IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Mounting: THT
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 650W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO264
Reverse recovery time: 200ns
Drain-source voltage: 500V
Drain current: 44A
кількість в упаковці: 1 шт
товар відсутній
IXFK44N80P IXFK(X)44N80P.pdf
IXFK44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK44N80Q3 IXFK(X)44N80Q3.pdf
IXFK44N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2693.43 грн
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
300+1055.42 грн
Мінімальне замовлення: 300
IXFK48N60Q3 IXFK(X)48N60Q3.pdf
IXFK48N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1877.24 грн
2+ 1711.59 грн
25+ 1596.8 грн
IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 300 шт
товар відсутній
IXFK520N075T2 IXFK(X)520N075T2.pdf
IXFK520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
кількість в упаковці: 1 шт
товар відсутній
IXFK52N100X IXFK(X)52N100X.pdf
IXFK52N100X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
кількість в упаковці: 1 шт
товар відсутній
IXFK64N50P IXFK(X)64N50P.pdf
IXFK64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N50Q3 IXFK(X)64N50Q3.pdf
IXFK64N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N60P IXFK(X)64N60P.pdf
IXFK64N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1184.89 грн
2+ 823.23 грн
4+ 750.05 грн
IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2490.79 грн
2+ 2271.57 грн
3+ 2186.56 грн
25+ 2143.01 грн
IXFK66N85X IXFK(X)66N85X.pdf
IXFK66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFK78N50P3 IXFK(X)78N50P3.pdf
IXFK78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1448.51 грн
3+ 1320.78 грн
IXFK80N50P IXFK(X)80N50P.pdf
IXFK80N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1425.99 грн
3+ 1300.88 грн
25+ 1241.38 грн
IXFK80N50Q3 IXFK(X)80N50Q3.pdf
IXFK80N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1523.56 грн
2+ 1057.53 грн
3+ 962.61 грн
IXFK80N65X2 IXF_80N65X2.pdf
IXFK80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1477.59 грн
3+ 1347.02 грн
25+ 1274.48 грн
IXFK88N30P IXFH(K,T)88N30P.pdf
IXFK88N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO264
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1369.7 грн
2+ 892.89 грн
4+ 812.77 грн
IXFK90N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_90n60x_datasheet.pdf.pdf
Виробник: IXYS
IXFK90N60X THT N channel transistors
на замовлення 5 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1194.33 грн
3+ 1129 грн
IXFK94N50P2 IXFx94N50P2.pdf
IXFK94N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1237.42 грн
3+ 1129 грн
IXFK98N50P3 IXFK(X)98N50P3.pdf
IXFK98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFL100N50P IXFL100N50P.pdf
IXFL100N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFL210N30P3 IXFL210N30P3.pdf
IXFL210N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2330.37 грн
2+ 2125.02 грн
IXFL32N120P IXFL32N120P.pdf
IXFL32N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+4107.23 грн
25+ 3884.55 грн
IXFL38N100P IXFL38N100P.pdf
IXFL38N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Case: ISOPLUS i5-pac™
Kind of package: tube
Power dissipation: 520W
Polarisation: unipolar
Gate charge: 0.35µC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 29A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2368.83 грн
2+ 2160.3 грн
25+ 2043.7 грн
IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1482.28 грн
3+ 1351.54 грн
25+ 1274.48 грн
IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
Polarisation: unipolar
On-state resistance: 80mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2190.59 грн
2+ 1997.46 грн
IXFN100N50P description 99497.pdf
IXFN100N50P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN100N50Q3 IXFN100N50Q3.pdf
IXFN100N50Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN100N65X2 IXFN100N65X2.pdf
IXFN100N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN102N30P IXFN102N30P.pdf
IXFN102N30P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Case: SOT227B
Drain current: 86A
On-state resistance: 33mΩ
Power dissipation: 570W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 224nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 250A
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Drain-source voltage: 300V
кількість в упаковці: 1 шт
товар відсутній
IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Pulsed drain current: 275A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Gate charge: 254nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Gate charge: 425nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 205ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+6097.99 грн
IXFN120N65X2 IXFN120N65X2.pdf
IXFN120N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+3354.83 грн
IXFN130N90SK
IXFN130N90SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Pulsed drain current: 330A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN140N20P description IXFN140N20P.pdf
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN140N25T IXFN140N25T.pdf
IXFN140N25T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 120A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 17mΩ
Pulsed drain current: 400A
Power dissipation: 690W
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 300 шт
товар відсутній
IXFN140N30P description IXFN140N30P.pdf
IXFN140N30P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Polarisation: unipolar
Power dissipation: 700W
On-state resistance: 24mΩ
Drain current: 110A
Drain-source voltage: 300V
Reverse recovery time: 200ns
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 185nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 300A
Case: SOT227B
кількість в упаковці: 1 шт
товар відсутній
IXFN150N65X2 IXFN150N65X2.pdf
IXFN150N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 145A
Pulsed drain current: 300A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Gate charge: 355nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 190ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN160N30T IXFN160N30T.pdf
IXFN160N30T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; SOT227B; screw; Idm: 444A
Technology: GigaMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 130A
Pulsed drain current: 444A
Power dissipation: 900W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 19mΩ
Gate charge: 376nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
IXFN170N25X3 IXFN170N25X3.pdf
IXFN170N25X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 146A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 400A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 0.19µC
Reverse recovery time: 135ns
Gate-source voltage: ±30V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+2428.88 грн
2+ 2214.58 грн
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