![IXFN44N100P IXFN44N100P](https://www.mouser.com/images/mouserelectronics/lrg/SOT_227_4_DSL.jpg)
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3227.32 грн |
10+ | 2805.45 грн |
20+ | 2360.96 грн |
50+ | 2320.64 грн |
100+ | 2151 грн |
200+ | 2074.53 грн |
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Технічний опис IXFN44N100P IXYS
Description: MOSFET N-CH 1000V 37A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V.
Інші пропозиції IXFN44N100P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN44N100P | Виробник : Littelfuse |
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товар відсутній |
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IXFN44N100P | Виробник : Littelfuse |
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товар відсутній |
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IXFN44N100P | Виробник : IXYS |
![]() Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 110A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 0.35µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IXFN44N100P | Виробник : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V |
товар відсутній |
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![]() |
IXFN44N100P | Виробник : IXYS |
![]() Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 110A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 0.35µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |