| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXDI614YI | IXYS |
 Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1000 шт |
товар відсутній |
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IXDI630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXDI630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 232 шт: термін постачання 14-21 дні (днів) |
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IXDI630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Output current: -30...30A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 135ns Kind of output: inverting Supply voltage: 12.5...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 219 шт: термін постачання 14-21 дні (днів) |
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IXDI630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Output current: -30...30A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 135ns Kind of output: inverting Supply voltage: 12.5...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 196 шт: термін постачання 14-21 дні (днів) |
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IXDN55N120D1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B Technology: NPT Collector current: 62A Power dissipation: 450W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 124A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
на замовлення 1998 шт: термін постачання 14-21 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
на замовлення 988 шт: термін постачання 14-21 дні (днів) |
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IXDN602SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
товар відсутній |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
на замовлення 879 шт: термін постачання 14-21 дні (днів) |
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IXDN602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 2000 шт |
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| IXDN602SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 2000 шт |
товар відсутній |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 943 шт: термін постачання 14-21 дні (днів) |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Case: SO8-EP Mounting: SMD Kind of package: tube Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 911 шт: термін постачання 14-21 дні (днів) |
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Case: SO8 Mounting: SMD Kind of package: tube Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Operating temperature: -40...125°C Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side кількість в упаковці: 1 шт |
на замовлення 86 шт: термін постачання 14-21 дні (днів) |
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IXDN604SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Case: SO8 Mounting: SMD Kind of package: reel; tape Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 2000 шт |
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| IXDN604SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Case: SO8-EP Mounting: SMD Kind of package: reel; tape Turn-on time: 81ns Turn-off time: 79ns Output current: -4...4A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 2000 шт |
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IXDN609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Case: TO220-5 Mounting: THT Kind of package: tube Turn-on time: 115ns Turn-off time: 105ns Output current: -9...9A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 1117 шт: термін постачання 14-21 дні (днів) |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Case: DIP8 Mounting: THT Kind of package: tube Turn-on time: 115ns Turn-off time: 105ns Output current: -9...9A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 1 кількість в упаковці: 1 шт |
товар відсутній |
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IXDN609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Case: SO8-EP Mounting: SMD Kind of package: tube Turn-on time: 115ns Turn-off time: 105ns Output current: -9...9A Operating temperature: -40...125°C Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 810 шт: термін постачання 14-21 дні (днів) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Case: SO8 Mounting: SMD Kind of package: tube Turn-on time: 115ns Turn-off time: 105ns Output current: -9...9A Operating temperature: -40...125°C Supply voltage: 4.5...35V Type of integrated circuit: driver Number of channels: 1 Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side кількість в упаковці: 1 шт |
на замовлення 927 шт: термін постачання 14-21 дні (днів) |
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IXDN609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Output current: -9...9A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 115ns Kind of output: non-inverting Supply voltage: 4.5...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 824 шт: термін постачання 14-21 дні (днів) |
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IXDN614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 908 шт: термін постачання 14-21 дні (днів) |
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IXDN614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 211 шт: термін постачання 14-21 дні (днів) |
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IXDN614SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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| IXDN614SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 2000 шт |
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IXDN614YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Output current: -14...14A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 140ns Kind of output: non-inverting Supply voltage: 4.5...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 199 шт: термін постачання 14-21 дні (днів) |
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IXDN630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Supply voltage: 12.5...35V Output current: -30...30A Kind of output: non-inverting Operating temperature: -40...125°C Kind of integrated circuit: gate driver; low-side Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 215 шт: термін постачання 14-21 дні (днів) |
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IXDN630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 173 шт: термін постачання 14-21 дні (днів) |
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IXDN630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Output current: -30...30A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 135ns Kind of output: non-inverting Supply voltage: 9...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 268 шт: термін постачання 14-21 дні (днів) |
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IXDN630YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Output current: -30...30A Case: TO263-5 Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Turn-on time: 135ns Kind of output: non-inverting Supply voltage: 12.5...35V Kind of integrated circuit: gate driver; low-side Turn-off time: 135ns кількість в упаковці: 1 шт |
на замовлення 118 шт: термін постачання 14-21 дні (днів) |
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IXDN75N120 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B Technology: NPT Collector current: 150A Power dissipation: 660W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 190A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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IXEL40N400 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 4kV Collector current: 40A Power dissipation: 380W Case: ISOPLUS i5-pac™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 275nC Kind of package: tube Turn-on time: 260ns Turn-off time: 1.17µs Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXFA10N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
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IXFA10N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Power dissipation: 480W Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
на замовлення 277 шт: термін постачання 14-21 дні (днів) |
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IXFA12N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns кількість в упаковці: 1 шт |
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IXFA130N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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IXFA130N15X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 80ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXFA14N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO263 On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFA14N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO263HV On-state resistance: 0.55Ω Mounting: SMD Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns кількість в упаковці: 1 шт |
на замовлення 52 шт: термін постачання 14-21 дні (днів) |
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IXFA16N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO263 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IXFA16N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 81 шт: термін постачання 14-21 дні (днів) |
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IXFA180N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFA18N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns кількість в упаковці: 1 шт |
на замовлення 74 шт: термін постачання 14-21 дні (днів) |
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IXFA18N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFA20N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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| IXFA20N85XHV | IXYS |
IXFA20N85XHV SMD N channel transistors |
товар відсутній |
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IXFA220N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFA22N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO263 On-state resistance: 390mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXFA22N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 145ns Drain-source voltage: 650V Drain current: 22A On-state resistance: 0.145Ω Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 37nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Case: TO263 кількість в упаковці: 1 шт |
товар відсутній |
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IXFA230N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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IXFA230N075T2-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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IXFA24N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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IXFA26N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263 Reverse recovery time: 105ns Drain-source voltage: 300V Drain current: 26A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 22nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 кількість в упаковці: 1 шт |
товар відсутній |
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IXFA26N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 77 шт: термін постачання 14-21 дні (днів) |
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IXFA270N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFA30N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns кількість в упаковці: 1 шт |
товар відсутній |
| IXDI614YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1000 шт
товар відсутній
| IXDI630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
товар відсутній
| IXDI630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 232 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 658.85 грн |
| 2+ | 524.32 грн |
| 6+ | 477.09 грн |
| 50+ | 458.84 грн |
| IXDI630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 219 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 658.85 грн |
| 3+ | 505.37 грн |
| 6+ | 459.71 грн |
| 50+ | 453.63 грн |
| IXDI630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 196 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 726.23 грн |
| 3+ | 506.27 грн |
| 6+ | 461.45 грн |
| 500+ | 444.07 грн |
| IXDN55N120D1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| IXDN602D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
на замовлення 1998 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.47 грн |
| 15+ | 71.29 грн |
| 41+ | 64.31 грн |
| 1000+ | 62.57 грн |
| IXDN602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
на замовлення 988 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.34 грн |
| 10+ | 85.73 грн |
| 17+ | 63.44 грн |
| 45+ | 59.96 грн |
| 1000+ | 57.36 грн |
| IXDN602SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
товар відсутній
| IXDN602SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
на замовлення 879 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.53 грн |
| 17+ | 64.98 грн |
| 45+ | 59.09 грн |
| 1000+ | 56.49 грн |
| IXDN602SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 2000 шт
товар відсутній
| IXDN602SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 2000 шт
товар відсутній
| IXDN604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 943 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.22 грн |
| 10+ | 100.81 грн |
| 12+ | 90.38 грн |
| 31+ | 86.03 грн |
| 250+ | 84.3 грн |
| IXDN604SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 911 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.61 грн |
| 5+ | 192.22 грн |
| 6+ | 167.72 грн |
| 17+ | 158.16 грн |
| 100+ | 155.55 грн |
| IXDN604SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
кількість в упаковці: 1 шт
на замовлення 86 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.11 грн |
| 11+ | 98.37 грн |
| 30+ | 89.51 грн |
| 50+ | 86.03 грн |
| IXDN604SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
товар відсутній
| IXDN604SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 81ns
Turn-off time: 79ns
Output current: -4...4A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2000 шт
товар відсутній
| IXDN609CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Case: TO220-5
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 1117 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.4 грн |
| 3+ | 234.64 грн |
| 6+ | 182.49 грн |
| 16+ | 172.94 грн |
| IXDN609PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
товар відсутній
| IXDN609SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 810 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.28 грн |
| 5+ | 170.56 грн |
| 7+ | 148.6 грн |
| 19+ | 140.78 грн |
| 100+ | 138.17 грн |
| IXDN609SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
кількість в упаковці: 1 шт
на замовлення 927 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.16 грн |
| 12+ | 91.15 грн |
| 32+ | 82.56 грн |
| 500+ | 79.95 грн |
| IXDN609YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 115ns
Kind of output: non-inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 115ns
Kind of output: non-inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 824 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.33 грн |
| 3+ | 207.56 грн |
| 6+ | 179.89 грн |
| 16+ | 170.33 грн |
| 50+ | 167.72 грн |
| IXDN614CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 908 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 343.46 грн |
| 3+ | 297.81 грн |
| 10+ | 266.79 грн |
| 50+ | 262.44 грн |
| IXDN614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 211 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.83 грн |
| 8+ | 137.17 грн |
| 22+ | 124.27 грн |
| 500+ | 123.4 грн |
| 1000+ | 119.92 грн |
| IXDN614SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 304.16 грн |
| 5+ | 233.73 грн |
| 13+ | 212.91 грн |
| 100+ | 208.57 грн |
| IXDN614SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 2000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 2000 шт
товар відсутній
| IXDN614YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 140ns
Kind of output: non-inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 140ns
Kind of output: non-inverting
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 199 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.3 грн |
| 4+ | 297.81 грн |
| 10+ | 271.13 грн |
| 500+ | 260.71 грн |
| IXDN630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 744.95 грн |
| 2+ | 543.27 грн |
| 6+ | 495.34 грн |
| 10+ | 494.47 грн |
| IXDN630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 173 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 625.16 грн |
| 2+ | 541.47 грн |
| 6+ | 493.6 грн |
| 10+ | 486.65 грн |
| 50+ | 475.35 грн |
| IXDN630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: non-inverting
Supply voltage: 9...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: non-inverting
Supply voltage: 9...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 268 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 725.3 грн |
| 2+ | 542.37 грн |
| 6+ | 493.6 грн |
| 250+ | 475.35 грн |
| IXDN630YI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: non-inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Turn-on time: 135ns
Kind of output: non-inverting
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Turn-off time: 135ns
кількість в упаковці: 1 шт
на замовлення 118 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 707.52 грн |
| 2+ | 542.37 грн |
| 6+ | 493.6 грн |
| 50+ | 486.65 грн |
| IXDN75N120 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| IXEL40N400 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 4kV; 40A; 380W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 4kV
Collector current: 40A
Power dissipation: 380W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Turn-on time: 260ns
Turn-off time: 1.17µs
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
| IXFA10N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA10N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFA110N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Power dissipation: 480W
Case: TO263
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Power dissipation: 480W
Case: TO263
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 448.28 грн |
| 3+ | 388.95 грн |
| 4+ | 295.47 грн |
| 10+ | 279.82 грн |
| IXFA12N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 277 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 306.03 грн |
| 3+ | 265.32 грн |
| 5+ | 204.22 грн |
| 14+ | 192.92 грн |
| IXFA12N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA130N10T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 288.25 грн |
| 3+ | 249.08 грн |
| 10+ | 224.21 грн |
| 50+ | 221.6 грн |
| IXFA130N15X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.13 грн |
| 3+ | 491.83 грн |
| 6+ | 447.55 грн |
| 50+ | 439.72 грн |
| IXFA14N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFA14N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO263HV
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
на замовлення 52 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 380.9 грн |
| 3+ | 329.39 грн |
| 9+ | 300.68 грн |
| 10+ | 295.47 грн |
| 50+ | 289.38 грн |
| IXFA16N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFA16N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 356.57 грн |
| 3+ | 309.54 грн |
| 5+ | 237.24 грн |
| 12+ | 224.21 грн |
| IXFA16N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 81 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 582.11 грн |
| 3+ | 402.49 грн |
| 8+ | 366.73 грн |
| IXFA180N10T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA18N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
на замовлення 74 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 541.87 грн |
| 3+ | 470.17 грн |
| 7+ | 428.43 грн |
| 10+ | 421.48 грн |
| 50+ | 412.79 грн |
| IXFA18N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA20N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.36 грн |
| 3+ | 222.9 грн |
| 10+ | 199.88 грн |
| 50+ | 195.53 грн |
| IXFA220N06T3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA22N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.85 грн |
| 3+ | 356.47 грн |
| 4+ | 281.56 грн |
| 10+ | 265.92 грн |
| IXFA22N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 145ns
Drain-source voltage: 650V
Drain current: 22A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 37nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 145ns
Drain-source voltage: 650V
Drain current: 22A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 37nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
кількість в упаковці: 1 шт
товар відсутній
| IXFA230N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 510.98 грн |
| 3+ | 443.1 грн |
| 4+ | 323.28 грн |
| 9+ | 305.03 грн |
| IXFA230N075T2-7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.08 грн |
| 3+ | 348.34 грн |
| 9+ | 317.19 грн |
| IXFA24N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 461.38 грн |
| 3+ | 400.69 грн |
| 4+ | 305.9 грн |
| 10+ | 289.38 грн |
| IXFA26N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
кількість в упаковці: 1 шт
товар відсутній
| IXFA26N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 430.5 грн |
| 3+ | 367.3 грн |
| 4+ | 317.19 грн |
| 9+ | 299.81 грн |
| 50+ | 295.47 грн |
| IXFA270N06T3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
товар відсутній
| IXFA30N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO263; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
товар відсутній