Продукція > IXYS > Всі товари виробника IXYS (19922) > Сторінка 235 з 333

Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 99 132 165 198 230 231 232 233 234 235 236 237 238 239 240 264 297 330 333  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 300 шт
товар відсутній
IXFH18N90P IXFH18N90P IXYS IXFH(T,V)18N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
IXFH20N50P3 IXFH20N50P3 IXYS IXFA(H,P,Q)20N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 172 шт:
термін постачання 14-21 дні (днів)
1+472.83 грн
4+ 287.68 грн
11+ 262.21 грн
1020+ 252.63 грн
IXFH20N80P IXFH20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH20N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_20n85x_datasheet.pdf.pdf IXFH20N85X THT N channel transistors
товар відсутній
IXFH220N06T3 IXFH220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)
1+453.13 грн
3+ 392.62 грн
4+ 304.9 грн
10+ 288.35 грн
IXFH220N20X3 IXFH220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
кількість в упаковці: 1 шт
товар відсутній
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 197 шт:
термін постачання 14-21 дні (днів)
1+530.06 грн
3+ 426.99 грн
7+ 389.4 грн
30+ 373.72 грн
IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH22N65X2 IXFH22N65X2 IXYS IXF_22N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
на замовлення 267 шт:
термін постачання 14-21 дні (днів)
1+472.83 грн
3+ 410.71 грн
4+ 317.1 грн
9+ 299.67 грн
IXFH230N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n075t2_datasheet.pdf.pdf IXFH230N075T2 THT N channel transistors
на замовлення 33 шт:
термін постачання 14-21 дні (днів)
1+630.44 грн
3+ 398.11 грн
7+ 377.2 грн
IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)
1+561.02 грн
3+ 486.7 грн
6+ 454.74 грн
10+ 437.31 грн
IXFH240N15X3 IXYS IXFH240N15X3 THT N channel transistors
товар відсутній
IXFH24N60X IXFH24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+554.45 грн
3+ 388.09 грн
8+ 353.68 грн
IXFH24N80P IXFH24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH24N90P IXFH24N90P IXYS IXF_24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH26N50P IXFH26N50P IXYS IXFH26N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 232 шт:
термін постачання 14-21 дні (днів)
1+590.1 грн
3+ 426.99 грн
7+ 388.53 грн
IXFH26N50P3 IXFH26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
1+583.53 грн
3+ 441.47 грн
7+ 401.6 грн
120+ 396.37 грн
IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH26N65X2 IXFH26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N60P IXFH30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
товар відсутній
IXFH30N60X IXFH30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n85x_datasheet.pdf.pdf IXFH30N85X THT N channel transistors
товар відсутній
IXFH320N10T2 IXFH320N10T2 IXYS IXFH(T)320N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
товар відсутній
IXFH340N075T2 IXFH340N075T2 IXYS IXFH(T)340N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
товар відсутній
IXFH34N50P3 IXFH34N50P3 IXYS IXFH(Q)34N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 251 шт:
термін постачання 14-21 дні (днів)
1+683.91 грн
3+ 464.99 грн
7+ 423.37 грн
IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+591.97 грн
3+ 507.51 грн
6+ 462.58 грн
10+ 460.83 грн
30+ 445.15 грн
IXFH34N65X2 IXFH34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 14-21 дні (днів)
1+614.49 грн
3+ 440.56 грн
7+ 400.72 грн
IXFH34N65X3 IXYS media?resourcetype=datasheets&itemid=ef61d523-5f56-49ae-a1e9-f5e1f9a55ce3&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXFH36N50P IXFH36N50P IXYS IXFH(V,T)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
товар відсутній
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH400N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf IXFH400N075T2 THT N channel transistors
товар відсутній
IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)
1+1258.06 грн
3+ 1147.09 грн
IXFH40N85X IXFH40N85X IXYS IXF_40N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH42N50P2 IXFH42N50P2 IXYS IXFH(T)42N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH42N60P3 IXFH42N60P3 IXYS IXFH42N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH44N50P IXFH44N50P IXYS IXFK44N50P.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 267 шт:
термін постачання 14-21 дні (днів)
1+903.44 грн
2+ 664.01 грн
5+ 604.57 грн
510+ 588.89 грн
IXFH44N50Q3 IXFH44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
1+1237.42 грн
3+ 1129 грн
510+ 1059.31 грн
IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH46N65X3 IXYS media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXFH48N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
кількість в упаковці: 1 шт
товар відсутній
IXFH50N30Q3 IXFH50N30Q3 IXYS IXFH50N30Q3_IXFT50N30Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 50A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Technology: HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
1+1122.97 грн
2+ 862.13 грн
4+ 784.9 грн
30+ 754.41 грн
IXFH50N60P3 IXFH50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 239 шт:
термін постачання 14-21 дні (днів)
1+823.7 грн
2+ 604.3 грн
5+ 549.69 грн
120+ 540.11 грн
510+ 528.78 грн
IXFH50N60X IXFH50N60X IXYS IXFH(Q,T)50N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO247-3; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
1+962.54 грн
2+ 692.05 грн
5+ 629.84 грн
IXFH50N85X IXFH50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 218ns
кількість в упаковці: 300 шт
товар відсутній
IXFH52N30P IXFH52N30P IXYS IXF(V,H)52N30P(S).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Reverse recovery time: 160ns
Drain-source voltage: 300V
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
IXFH52N50P2 IXFH52N50P2 IXYS IXFH(T)52N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)
1+882.8 грн
2+ 624.21 грн
5+ 567.98 грн
IXFH54N65X3 IXYS media?resourcetype=datasheets&itemid=a3d0a76c-ea9b-425f-b9ef-be0074b0cd12&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
товар відсутній
IXFH56N30X3 IXFH56N30X3 IXYS 300VProductBrief.pdf IXF_56N30X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 254 шт:
термін постачання 14-21 дні (днів)
1+795.55 грн
2+ 569.93 грн
6+ 518.33 грн
IXFH60N50P3 IXFH60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 445 шт:
термін постачання 14-21 дні (днів)
1+804 грн
2+ 604.3 грн
5+ 549.69 грн
120+ 546.21 грн
IXFH60N60X IXFH60N60X IXYS IXFH(Q)60N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 300 шт
товар відсутній
IXFH18N90P IXFH(T,V)18N90P_S.pdf
IXFH18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
IXFH20N50P3 IXFA(H,P,Q)20N50P3.pdf
IXFH20N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 172 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+472.83 грн
4+ 287.68 грн
11+ 262.21 грн
1020+ 252.63 грн
IXFH20N80P IXFH(T,V)20N80P_S.pdf
IXFH20N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH20N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_20n85x_datasheet.pdf.pdf
Виробник: IXYS
IXFH20N85X THT N channel transistors
товар відсутній
IXFH220N06T3 IXxx220N06T3-DTE.pdf
IXFH220N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+453.13 грн
3+ 392.62 грн
4+ 304.9 грн
10+ 288.35 грн
IXFH220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFH220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
кількість в упаковці: 1 шт
товар відсутній
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 197 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+530.06 грн
3+ 426.99 грн
7+ 389.4 грн
30+ 373.72 грн
IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH22N65X2 IXF_22N65X2.pdf
IXFH22N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
на замовлення 267 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+472.83 грн
3+ 410.71 грн
4+ 317.1 грн
9+ 299.67 грн
IXFH230N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh230n075t2_datasheet.pdf.pdf
Виробник: IXYS
IXFH230N075T2 THT N channel transistors
на замовлення 33 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+630.44 грн
3+ 398.11 грн
7+ 377.2 грн
IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+561.02 грн
3+ 486.7 грн
6+ 454.74 грн
10+ 437.31 грн
IXFH240N15X3
Виробник: IXYS
IXFH240N15X3 THT N channel transistors
товар відсутній
IXFH24N60X IXFA(H,P,Q)24N60X.pdf
IXFH24N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO247-3; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+554.45 грн
3+ 388.09 грн
8+ 353.68 грн
IXFH24N80P IXFH(K,T)24N80P.pdf
IXFH24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH24N90P IXF_24N90P.pdf
IXFH24N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH26N50P IXFH26N50P.pdf
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 232 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+590.1 грн
3+ 426.99 грн
7+ 388.53 грн
IXFH26N50P3 IXFH26N50P3.pdf
IXFH26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+583.53 грн
3+ 441.47 грн
7+ 401.6 грн
120+ 396.37 грн
IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFH26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N60P IXFH(T,V)30N60P_S.pdf
IXFH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
товар відсутній
IXFH30N60X IXFH(T,Q)30N60X.pdf
IXFH30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXFH30N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n85x_datasheet.pdf.pdf
Виробник: IXYS
IXFH30N85X THT N channel transistors
товар відсутній
IXFH320N10T2 IXFH(T)320N10T2.pdf
IXFH320N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
товар відсутній
IXFH340N075T2 IXFH(T)340N075T2.pdf
IXFH340N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
товар відсутній
IXFH34N50P3 IXFH(Q)34N50P3.pdf
IXFH34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 251 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+683.91 грн
3+ 464.99 грн
7+ 423.37 грн
IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+591.97 грн
3+ 507.51 грн
6+ 462.58 грн
10+ 460.83 грн
30+ 445.15 грн
IXFH34N65X2 IXF_34N65X2.pdf
IXFH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
кількість в упаковці: 1 шт
на замовлення 215 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+614.49 грн
3+ 440.56 грн
7+ 400.72 грн
IXFH34N65X3 media?resourcetype=datasheets&itemid=ef61d523-5f56-49ae-a1e9-f5e1f9a55ce3&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
IXFH36N50P IXFH(V,T)36N50P_S.pdf
IXFH36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 300 шт
товар відсутній
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH400N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_400n075t2_datasheet.pdf.pdf
Виробник: IXYS
IXFH400N075T2 THT N channel transistors
товар відсутній
IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1258.06 грн
3+ 1147.09 грн
IXFH40N85X IXF_40N85X_HV.pdf
IXFH40N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH42N50P2 IXFH(T)42N50P2.pdf
IXFH42N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH42N60P3 IXFH42N60P3.pdf
IXFH42N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFH44N50P description IXFK44N50P.pdf
IXFH44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
на замовлення 267 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+903.44 грн
2+ 664.01 грн
5+ 604.57 грн
510+ 588.89 грн
IXFH44N50Q3 IXFH(T)44N50Q3.pdf
IXFH44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1237.42 грн
3+ 1129 грн
510+ 1059.31 грн
IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH46N65X3 media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
кількість в упаковці: 1 шт
товар відсутній
IXFH48N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
кількість в упаковці: 1 шт
товар відсутній
IXFH50N30Q3 IXFH50N30Q3_IXFT50N30Q3.pdf
IXFH50N30Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 50A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 65nC
Technology: HiPerFET™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1122.97 грн
2+ 862.13 грн
4+ 784.9 грн
30+ 754.41 грн
IXFH50N60P3 IXFH(T,Q)50N60P3.pdf
IXFH50N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 239 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+823.7 грн
2+ 604.3 грн
5+ 549.69 грн
120+ 540.11 грн
510+ 528.78 грн
IXFH50N60X IXFH(Q,T)50N60X.pdf
IXFH50N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO247-3; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+962.54 грн
2+ 692.05 грн
5+ 629.84 грн
IXFH50N85X IXF_50N85X.pdf
IXFH50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 218ns
кількість в упаковці: 300 шт
товар відсутній
IXFH52N30P IXF(V,H)52N30P(S).pdf
IXFH52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Reverse recovery time: 160ns
Drain-source voltage: 300V
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
IXFH52N50P2 IXFH(T)52N50P2.pdf
IXFH52N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+882.8 грн
2+ 624.21 грн
5+ 567.98 грн
IXFH54N65X3 media?resourcetype=datasheets&itemid=a3d0a76c-ea9b-425f-b9ef-be0074b0cd12&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
товар відсутній
IXFH56N30X3 300VProductBrief.pdf IXF_56N30X3.pdf
IXFH56N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 254 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+795.55 грн
2+ 569.93 грн
6+ 518.33 грн
IXFH60N50P3 IXF_60N50P3.pdf
IXFH60N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 445 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+804 грн
2+ 604.3 грн
5+ 549.69 грн
120+ 546.21 грн
IXFH60N60X IXFH(Q)60N60X.pdf
IXFH60N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n60x3_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 99 132 165 198 230 231 232 233 234 235 236 237 238 239 240 264 297 330 333  [ Наступна Сторінка >> ]