Продукція > IXYS > Всі товари виробника IXYS (19985) > Сторінка 330 з 334

Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 99 132 165 198 231 264 297 325 326 327 328 329 330 331 332 333 334  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
PLA134STR IXYS PLA134.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA140 PLA140 IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140L PLA140L IXYS PLA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Case: DIP6
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
1+496.01 грн
4+ 220.15 грн
11+ 208.57 грн
PLA140LS PLA140LS IXYS PLA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140LSTR IXYS PLA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140S PLA140S IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+483.53 грн
4+ 215.08 грн
11+ 203.5 грн
PLA143 PLA143 IXYS PLA143.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA143S PLA143S IXYS PLA143.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+376.69 грн
6+ 167.29 грн
14+ 157.87 грн
Мінімальне замовлення: 2
PLA143STR IXYS PLA143.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA150 PLA150 IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
1+451.56 грн
5+ 200.6 грн
12+ 189.74 грн
PLA150S PLA150S IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 196 шт:
термін постачання 21-30 дні (днів)
1+453.12 грн
5+ 202.05 грн
12+ 190.46 грн
PLA150STR IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
товар відсутній
PLA160S PLA160S IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+450.78 грн
5+ 199.88 грн
12+ 189.01 грн
PLA160STR IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
товар відсутній
PLA171P PLA171P IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
2+379.81 грн
6+ 169.46 грн
14+ 160.04 грн
Мінімальне замовлення: 2
PLA171PTR IXYS PLA171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA172P PLA172P IXYS PLA172P.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...105°C
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA172PTR IXYS PLA172P.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...105°C
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTP70N075T2 IXTP70N075T2 IXYS IXTA(P)70N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTA170N075T2 IXTA170N075T2 IXYS IXTA(P)170N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
товар відсутній
IXTA270N04T4 IXTA270N04T4 IXYS IXTA270N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTA270N04T4-7 IXTA270N04T4-7 IXYS IXTA270N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTH270N04T4 IXTH270N04T4 IXYS IXTH(P)270N04T4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
2+322.1 грн
3+ 268.67 грн
4+ 211.46 грн
10+ 210.74 грн
11+ 199.88 грн
Мінімальне замовлення: 2
DSEC30-06A DSEC30-06A IXYS DSEC30-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.57V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 110A
Power dissipation: 95W
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
2+318.98 грн
3+ 266.5 грн
4+ 212.19 грн
11+ 200.6 грн
Мінімальне замовлення: 2
DSEC30-06B DSEC30-06B IXYS DSEC30-06B.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.03V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 110A
Power dissipation: 95W
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
2+315.08 грн
3+ 258.53 грн
4+ 233.19 грн
10+ 232.46 грн
11+ 220.15 грн
Мінімальне замовлення: 2
DSEC30-12A DSEC30-12A IXYS media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
2+318.98 грн
3+ 266.5 грн
4+ 215.08 грн
11+ 203.5 грн
Мінімальне замовлення: 2
CPC1393GR CPC1393GR IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 506 шт:
термін постачання 21-30 дні (днів)
2+236.31 грн
8+ 105.73 грн
22+ 99.94 грн
Мінімальне замовлення: 2
CPC1393GRTR IXYS CPC1393.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTF2N300P3 IXTF2N300P3 IXYS IXTF2N300P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 160W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 1.6A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
IXTH2N300P3HV IXTH2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
товар відсутній
IXTT2N300P3HV IXTT2N300P3HV IXYS IXTH(T)2N300P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
товар відсутній
IXFH52N30P IXFH52N30P IXYS IXF(V,H)52N30P(S).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Reverse recovery time: 160ns
Drain-source voltage: 300V
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
товар відсутній
MMIX1T600N04T2
+1
 		MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2095.57 грн
2+ 1839.43 грн
20+ 1809.74 грн
IXTA64N10L2 IXTA64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
IXTH64N10L2 IXTH64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
3+138.04 грн
5+ 115.87 грн
10+ 91.25 грн
26+ 86.18 грн
Мінімальне замовлення: 3
LCB120STR IXYS LCB120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
IXTA02N250HV IXTA02N250HV IXYS IXTA(T)02N250HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
товар відсутній
MCO100-12IO1 MCO100-12IO1 IXYS MCO100-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCMA85PD1200TB MCMA85PD1200TB IXYS MCMA85PD1200TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA85PD1600TB MCMA85PD1600TB IXYS MCMA85PD1600TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA110PD1200TB MCMA110PD1200TB IXYS MCMA110PD1200TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA110PD1600TB MCMA110PD1600TB IXYS MCMA110PD1600TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA140PD1200TB MCMA140PD1200TB IXYS MCMA140PD1200TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA140PD1600TB MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+2425.46 грн
MCMA260PD1600YB IXYS MCMA260PD1600YB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
LDA213STR LDA213STR IXYS LDA213.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
IXTH360N055T2 IXTH360N055T2 IXYS IXTH(T)360N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTT360N055T2 IXTT360N055T2 IXYS IXTH(T)360N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
товар відсутній
IXTN32P60P IXTN32P60P IXYS IXTN32P60P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
товар відсутній
IXTR32P60P IXTR32P60P IXYS IXTR32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
товар відсутній
IXTX32P60P IXTX32P60P IXYS IXT_32P60P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Mounting: THT
Kind of package: tube
Case: PLUS247™
Power dissipation: 890W
Polarisation: unipolar
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
товар відсутній
DSA30C60PB DSA30C60PB IXYS DSA30C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)
4+106.07 грн
5+ 89.07 грн
10+ 78.21 грн
12+ 70.25 грн
33+ 66.62 грн
250+ 65.18 грн
Мінімальне замовлення: 4
DSB20C60PN DSB20C60PN IXYS DSB20C60PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220FP
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 240A
Power dissipation: 30W
на замовлення 432 шт:
термін постачання 21-30 дні (днів)
5+75.32 грн
10+ 67.35 грн
15+ 59.38 грн
39+ 56.49 грн
250+ 55.76 грн
Мінімальне замовлення: 5
DSB60C60PB DSB60C60PB IXYS DSB60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 490A
Power dissipation: 145W
товар відсутній
IXFA26N30X3 IXFA26N30X3 IXYS 300VProductBrief.pdf IXF_26N30X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
товар відсутній
IXTQ36N50P IXTQ36N50P IXYS IXTH(Q,T,V)36N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
1+836.82 грн
2+ 569.93 грн
3+ 569.21 грн
5+ 538.79 грн
IXKT70N60C5 IXKT70N60C5 IXYS IXKT70N60C5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
товар відсутній
IXFR80N50Q3 IXFR80N50Q3 IXYS IXFR80N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+2044.1 грн
2+ 1794.53 грн
PLA134STR PLA134.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA140 PLA140.pdf
PLA140
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140L PLA140L.pdf
PLA140L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Case: DIP6
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+496.01 грн
4+ 220.15 грн
11+ 208.57 грн
PLA140LS PLA140L.pdf
PLA140LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140LSTR PLA140L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
PLA140S PLA140.pdf
PLA140S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+483.53 грн
4+ 215.08 грн
11+ 203.5 грн
PLA143 PLA143.pdf
PLA143
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA143S PLA143.pdf
PLA143S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+376.69 грн
6+ 167.29 грн
14+ 157.87 грн
Мінімальне замовлення: 2
PLA143STR PLA143.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA150 PLA150.pdf
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+451.56 грн
5+ 200.6 грн
12+ 189.74 грн
PLA150S PLA150.pdf
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 196 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+453.12 грн
5+ 202.05 грн
12+ 190.46 грн
PLA150STR PLA150.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Kind of output: MOSFET
товар відсутній
PLA160S PLA160.pdf
PLA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+450.78 грн
5+ 199.88 грн
12+ 189.01 грн
PLA160STR PLA160.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.300VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 50mA
Switched voltage: max. 300V AC; max. 300V DC
Relay variant: 1-phase; current source
On-state resistance: 100Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 50µs
Turn-off time: 50µs
товар відсутній
PLA171P PLA171.pdf
PLA171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+379.81 грн
6+ 169.46 грн
14+ 160.04 грн
Мінімальне замовлення: 2
PLA171PTR PLA171.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA172P PLA172P.pdf
PLA172P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...105°C
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
PLA172PTR PLA172P.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Operating temperature: -40...105°C
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTP70N075T2 IXTA(P)70N075T2.pdf
IXTP70N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTA170N075T2 IXTA(P)170N075T2.pdf
IXTA170N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
товар відсутній
IXTA270N04T4 IXTA270N04T4.pdf
IXTA270N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTA270N04T4-7 IXTA270N04T4.pdf
IXTA270N04T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXTH270N04T4 IXTH(P)270N04T4.pdf
IXTH270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+322.1 грн
3+ 268.67 грн
4+ 211.46 грн
10+ 210.74 грн
11+ 199.88 грн
Мінімальне замовлення: 2
DSEC30-06A DSEC30-06A.pdf
DSEC30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.57V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 110A
Power dissipation: 95W
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+318.98 грн
3+ 266.5 грн
4+ 212.19 грн
11+ 200.6 грн
Мінімальне замовлення: 2
DSEC30-06B DSEC30-06B.pdf
DSEC30-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 110A; TO247-3; 95W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.03V
Load current: 15A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 110A
Power dissipation: 95W
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+315.08 грн
3+ 258.53 грн
4+ 233.19 грн
10+ 232.46 грн
11+ 220.15 грн
Мінімальне замовлення: 2
DSEC30-12A description media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet
DSEC30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+318.98 грн
3+ 266.5 грн
4+ 215.08 грн
11+ 203.5 грн
Мінімальне замовлення: 2
CPC1393GR CPC1393.pdf
CPC1393GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 506 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+236.31 грн
8+ 105.73 грн
22+ 99.94 грн
Мінімальне замовлення: 2
CPC1393GRTR CPC1393.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTF2N300P3 IXTF2N300P3.pdf
IXTF2N300P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 3kV; 1.6A; Idm: 6A; 160W
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 160W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 1.6A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Technology: Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
IXTH2N300P3HV IXTH(T)2N300P3HV.pdf
IXTH2N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO247HV; 400ns
Mounting: THT
Case: TO247HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
товар відсутній
IXTT2N300P3HV IXTH(T)2N300P3HV.pdf
IXTT2N300P3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 2A; 520W; TO268HV; 400ns
Mounting: SMD
Case: TO268HV
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 520W
On-state resistance: 21Ω
Kind of package: tube
Drain current: 2A
Drain-source voltage: 3kV
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
Gate charge: 73nC
Kind of channel: enhanced
товар відсутній
IXFH52N30P IXF(V,H)52N30P(S).pdf
IXFH52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Reverse recovery time: 160ns
Drain-source voltage: 300V
Drain current: 52A
On-state resistance: 73mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
товар відсутній
MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Mounting: SMD
Power dissipation: 830W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 1.3mΩ
Drain current: 600A
Drain-source voltage: 40V
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Reverse recovery time: 100ns
Gate-source voltage: ±20V
Pulsed drain current: 2kA
Case: SMPD
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2095.57 грн
2+ 1839.43 грн
20+ 1809.74 грн
IXTA64N10L2 IXTA(H,P)64N10L2.pdf
IXTA64N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
IXTH64N10L2 IXTA(H,P)64N10L2.pdf
IXTH64N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товар відсутній
IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+138.04 грн
5+ 115.87 грн
10+ 91.25 грн
26+ 86.18 грн
Мінімальне замовлення: 3
LCB120STR LCB120.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
IXTA02N250HV IXTA(T)02N250HV.pdf
IXTA02N250HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
товар відсутній
MCO100-12IO1 MCO100-12io1.pdf
MCO100-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCMA85PD1200TB MCMA85PD1200TB.pdf
MCMA85PD1200TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA85PD1600TB MCMA85PD1600TB.pdf
MCMA85PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 135A
Max. forward voltage: 1.18V
Load current: 85A
Semiconductor structure: double series
Gate current: 95/200mA
Max. forward impulse current: 1.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA110PD1200TB MCMA110PD1200TB.pdf
MCMA110PD1200TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA110PD1600TB MCMA110PD1600TB.pdf
MCMA110PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 170A
Max. forward voltage: 1.21V
Load current: 110A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 1.9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA140PD1200TB MCMA140PD1200TB.pdf
MCMA140PD1200TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA140PD1600TB MCMA140PD1600TB.pdf
MCMA140PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 220A
Max. forward voltage: 1.28V
Load current: 140A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 2.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2425.46 грн
MCMA260PD1600YB MCMA260PD1600YB.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.81V
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.6kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
LDA213STR LDA213.pdf
LDA213STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Number of channels: 2
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
IXTH360N055T2 IXTH(T)360N055T2.pdf
IXTH360N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTT360N055T2 IXTH(T)360N055T2.pdf
IXTT360N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Drain current: 360A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 935W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 330nC
Kind of channel: enhanced
Reverse recovery time: 78ns
Drain-source voltage: 55V
товар відсутній
IXTN32P60P IXTN32P60P.pdf
IXTN32P60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -96A
Case: SOT227B
товар відсутній
IXTR32P60P IXTR32P60P.pdf
IXTR32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -18A
On-state resistance: 0.385Ω
Type of transistor: P-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: ISOPLUS247™
товар відсутній
IXTX32P60P IXT_32P60P.pdf
IXTX32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Mounting: THT
Kind of package: tube
Case: PLUS247™
Power dissipation: 890W
Polarisation: unipolar
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
товар відсутній
DSA30C60PB DSA30C60PB.pdf
DSA30C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 85W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Power dissipation: 85W
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 340A
Max. forward voltage: 0.72V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+106.07 грн
5+ 89.07 грн
10+ 78.21 грн
12+ 70.25 грн
33+ 66.62 грн
250+ 65.18 грн
Мінімальне замовлення: 4
DSB20C60PN DSB20C60PN.pdf
DSB20C60PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.62V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220FP
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 240A
Power dissipation: 30W
на замовлення 432 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+75.32 грн
10+ 67.35 грн
15+ 59.38 грн
39+ 56.49 грн
250+ 55.76 грн
Мінімальне замовлення: 5
DSB60C60PB DSB60C60PB.pdf
DSB60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Case: TO220AB
Max. off-state voltage: 60V
Max. forward voltage: 0.69V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 490A
Power dissipation: 145W
товар відсутній
IXFA26N30X3 300VProductBrief.pdf IXF_26N30X3.pdf
IXFA26N30X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO263
Reverse recovery time: 105ns
Drain-source voltage: 300V
Drain current: 26A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
товар відсутній
IXTQ36N50P IXTH(Q,T,V)36N50P_S.pdf
IXTQ36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 270 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+836.82 грн
2+ 569.93 грн
3+ 569.21 грн
5+ 538.79 грн
IXKT70N60C5 IXKT70N60C5.pdf
IXKT70N60C5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
товар відсутній
IXFR80N50Q3 IXFR80N50Q3.pdf
IXFR80N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2044.1 грн
2+ 1794.53 грн
Обрати Сторінку:   [  << Попередня Сторінка ]  1 33 66 99 132 165 198 231 264 297 325 326 327 328 329 330 331 332 333 334  [ Наступна Сторінка >> ]