![IXFN40N90P IXFN40N90P](https://www.mouser.com/images/ixys/lrg/sot-227.jpg)
на замовлення 300 шт:
термін постачання 567-576 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3084.77 грн |
10+ | 2708.9 грн |
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Технічний опис IXFN40N90P IXYS
Description: MOSFET N-CH 900V 33A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Інші пропозиції IXFN40N90P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN40N90P | Виробник : Littelfuse |
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товар відсутній |
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IXFN40N90P | Виробник : Littelfuse |
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товар відсутній |
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IXFN40N90P | Виробник : IXYS |
![]() Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W Type of module: MOSFET transistor Gate charge: 230nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 33A Kind of channel: enhanced Drain-source voltage: 900V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 0.23Ω Reverse recovery time: 300ns Pulsed drain current: 80A Power dissipation: 695W кількість в упаковці: 1 шт |
товар відсутній |
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IXFN40N90P | Виробник : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
товар відсутній |
|
![]() |
IXFN40N90P | Виробник : IXYS |
![]() Description: Module; single transistor; 900V; 33A; SOT227B; screw; Idm: 80A; 695W Type of module: MOSFET transistor Gate charge: 230nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 33A Kind of channel: enhanced Drain-source voltage: 900V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 0.23Ω Reverse recovery time: 300ns Pulsed drain current: 80A Power dissipation: 695W |
товар відсутній |