| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT30N50Q3 | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT30N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns Mounting: SMD Reverse recovery time: 160ns Power dissipation: 695W Features of semiconductor devices: ultra junction x-class Case: TO268HV Kind of package: tube Gate charge: 68nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 850V Type of transistor: N-MOSFET On-state resistance: 0.23Ω кількість в упаковці: 1 шт |
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IXFT320N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns кількість в упаковці: 1 шт |
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IXFT340N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns Mounting: SMD Case: TO268 Power dissipation: 935W Gate charge: 300nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 340A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 3.2mΩ Reverse recovery time: 75ns кількість в упаковці: 1 шт |
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IXFT36N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 36A Power dissipation: 540W Case: TO268 On-state resistance: 0.17Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT36N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO268 On-state resistance: 0.19Ω Mounting: SMD Gate charge: 102nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT400N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns Case: TO268 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 77ns Drain-source voltage: 75V Drain current: 400A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 1kW Polarisation: unipolar Gate charge: 420nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT40N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 40A Power dissipation: 860W Case: TO268HV On-state resistance: 0.145Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFT42N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 42A Power dissipation: 830W Case: TO268 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 50A Power dissipation: 690W Case: TO268 On-state resistance: 80mΩ Mounting: SMD Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.16Ω Mounting: SMD Gate charge: 94nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT50N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 660W Case: TO268 On-state resistance: 73mΩ Mounting: SMD Gate charge: 116nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 195ns кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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IXFT50N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO268HV On-state resistance: 0.105Ω Mounting: SMD Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns кількість в упаковці: 1 шт |
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IXFT52N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 52A Power dissipation: 960W Case: TO268 On-state resistance: 0.12Ω Mounting: SMD Gate charge: 113nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| IXFT60N60X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Pulsed drain current: 90A Power dissipation: 625W Case: TO268HV Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 175ns кількість в упаковці: 1 шт |
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IXFT60N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Power dissipation: 780W Case: TO268 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: SMD Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 180ns кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
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| IXFT69N30P | IXYS |
IXFT69N30P SMD N channel transistors |
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IXFT70N20Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268 Drain-source voltage: 200V Drain current: 70A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Kind of package: tube Gate charge: 67nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
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IXFT70N30Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268 Drain-source voltage: 300V Drain current: 70A On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 830W Polarisation: unipolar Kind of package: tube Gate charge: 98nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
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IXFT80N65X2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO268 Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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| IXFT86N30T | IXYS |
IXFT86N30T SMD N channel transistors |
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IXFT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFT94N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268 Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 102nC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
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IXFT94N30T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns Reverse recovery time: 155ns Drain-source voltage: 300V Drain current: 94A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 890W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.19µC Kind of channel: enhanced Mounting: SMD Case: TO268 кількість в упаковці: 1 шт |
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IXFT96N20P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 145nC Polarisation: unipolar Drain current: 96A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO268 On-state resistance: 24mΩ кількість в упаковці: 1 шт |
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IXFX100N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 30mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns кількість в упаковці: 1 шт |
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IXFX120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 700W Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX120N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 1.13kW Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 27mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFX120N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube Power dissipation: 960W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 265nC Kind of channel: enhanced Drain-source voltage: 300V Drain current: 120A On-state resistance: 24mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFX120N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 120A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 24mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 220ns кількість в упаковці: 1 шт |
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IXFX140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 140A Power dissipation: 960W Case: PLUS247™ On-state resistance: 17mΩ Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFX140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™ Mounting: THT Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 140A Drain-source voltage: 300V Kind of package: tube Case: PLUS247™ Gate charge: 185nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX150N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX160N30T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXFX170N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™ Mounting: THT Power dissipation: 1.25kW Gate charge: 185nC Polarisation: unipolar Drain current: 170A Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 14mΩ кількість в упаковці: 1 шт |
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| IXFX170N20T | IXYS |
IXFX170N20T THT N channel transistors |
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IXFX180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 830W Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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| IXFX180N25T | IXYS |
IXFX180N25T THT N channel transistors |
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IXFX200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXFX210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns кількість в упаковці: 1 шт |
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IXFX220N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1670W Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Gate charge: 358nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFX240N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 460nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFX240N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5mΩ Mounting: THT Gate charge: 345nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 177ns кількість в упаковці: 1 шт |
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IXFX24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 440mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX250N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 250A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.5mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: PLUS247™ On-state resistance: 390mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX26N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 26A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.5Ω Mounting: THT Gate charge: 255nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 147 шт: термін постачання 14-21 дні (днів) |
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IXFX300N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 300A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 170ns кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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IXFX320N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™ Case: PLUS247™ Mounting: THT Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Power dissipation: 1670W Gate charge: 640nC Polarisation: unipolar Drain current: 320A Kind of channel: enhanced Drain-source voltage: 170V Type of transistor: N-MOSFET On-state resistance: 5.2mΩ кількість в упаковці: 1 шт |
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IXFX32N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 960W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFX32N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 32A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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IXFX32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Drain current: 32A Drain-source voltage: 800V Power dissipation: 830W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFX32N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™ Case: PLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Drain current: 32A Drain-source voltage: 800V Power dissipation: 1kW Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFX32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: PLUS247™ Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω кількість в упаковці: 1 шт |
товар відсутній |
| IXFT30N50Q3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT30N85XHV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFT320N10T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT340N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT36N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT36N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT400N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 420nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 400A; 1000W; TO268; 77ns
Case: TO268
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 77ns
Drain-source voltage: 75V
Drain current: 400A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 420nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT40N85XHV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT42N50P2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT44N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT44N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 50A
Power dissipation: 690W
Case: TO268
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT50N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1075.31 грн |
| 2+ | 740.91 грн |
| 4+ | 674.36 грн |
| IXFT50N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT52N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 52A
Power dissipation: 960W
Case: TO268
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N60X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 60A; Idm: 90A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 90A
Power dissipation: 625W
Case: TO268HV
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 175ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT60N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Power dissipation: 780W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1039.75 грн |
| 2+ | 730.08 грн |
| 4+ | 664.8 грн |
| IXFT70N20Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Drain-source voltage: 200V
Drain current: 70A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Kind of package: tube
Gate charge: 67nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT70N30Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 830W
Polarisation: unipolar
Kind of package: tube
Gate charge: 98nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT80N65X2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFT94N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 1040W; TO268
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 102nC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT94N30T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 94A; 890W; TO268; 155ns
Reverse recovery time: 155ns
Drain-source voltage: 300V
Drain current: 94A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.19µC
Kind of channel: enhanced
Mounting: SMD
Case: TO268
кількість в упаковці: 1 шт
товар відсутній
| IXFT96N20P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 24mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 145nC
Polarisation: unipolar
Drain current: 96A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 24mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXFX100N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
кількість в упаковці: 1 шт
товар відсутній
| IXFX120N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX120N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.13kW
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 1.13kW
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXFX120N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 265nC
Kind of channel: enhanced
Drain-source voltage: 300V
Drain current: 120A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXFX120N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
кількість в упаковці: 1 шт
товар відсутній
| IXFX140N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXFX140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Case: PLUS247™
Gate charge: 185nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Case: PLUS247™
Gate charge: 185nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX150N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX160N30T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160A; 1390W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 160A
Power dissipation: 1390W
Case: PLUS247™
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 376nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1283.08 грн |
| 3+ | 1170.47 грн |
| 30+ | 1114.95 грн |
| IXFX170N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 185nC
Polarisation: unipolar
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 14mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1250W; PLUS247™
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 185nC
Polarisation: unipolar
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 14mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXFX180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1413.16 грн |
| 2+ | 929.52 грн |
| 4+ | 845.56 грн |
| IXFX200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1754.76 грн |
| 2+ | 1600.04 грн |
| 30+ | 1527.74 грн |
| IXFX210N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
товар відсутній
| IXFX220N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1049.11 грн |
| 2+ | 834.76 грн |
| 4+ | 760.39 грн |
| 30+ | 730.85 грн |
| IXFX230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1670W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 358nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXFX240N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXFX240N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; PLUS247™; 177ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 345nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 177ns
кількість в упаковці: 1 шт
товар відсутній
| IXFX24N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX250N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX26N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX26N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 26A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 26A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX27N80Q |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 147 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1732.29 грн |
| 2+ | 1580.18 грн |
| 3+ | 1520.79 грн |
| 10+ | 1511.23 грн |
| 30+ | 1462.56 грн |
| IXFX300N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2228.31 грн |
| 2+ | 2031.41 грн |
| 30+ | 1890.99 грн |
| IXFX320N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
кількість в упаковці: 1 шт
товар відсутній
| IXFX32N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFX32N100Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
кількість в упаковці: 1 шт
товар відсутній
| IXFX32N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXFX32N80Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 1kW
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| IXFX32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
кількість в упаковці: 1 шт
товар відсутній