| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN420N10T | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA Technology: GigaMOS™; HiPerFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 420A Pulsed drain current: 1kA Power dissipation: 1.07kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 2.3mΩ Gate charge: 670nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 140ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN44N100P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 110A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 0.35µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN44N100Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 38A Pulsed drain current: 110A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.22Ω Gate charge: 264nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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IXFN44N80P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 39A Pulsed drain current: 100A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.19Ω Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN48N60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 110A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.14Ω Gate charge: 150nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN50N120SIC | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 30A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: HiPerFET™; SiC Kind of channel: enhanced Gate charge: 0.1µC Reverse recovery time: 26ns Gate-source voltage: -10...25V Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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IXFN50N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Kind of channel: enhanced Gate charge: 115nC Reverse recovery time: 54ns Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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IXFN520N075T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Case: SOT227B On-state resistance: 1.9mΩ Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 940W Polarisation: unipolar Drain-source voltage: 75V Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 545nC Reverse recovery time: 150ns Semiconductor structure: single transistor Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 480A Pulsed drain current: 1.5kA кількість в упаковці: 1 шт |
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IXFN52N100X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Pulsed drain current: 100A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.125Ω Gate charge: 245nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 260ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN52N90P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 104A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω кількість в упаковці: 1 шт |
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IXFN56N90P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Pulsed drain current: 168A Power dissipation: 1kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN60N80P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 53A Pulsed drain current: 150A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 0.14Ω Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN62N80Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 49A Pulsed drain current: 180A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.14Ω Gate charge: 0.27µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN64N50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN64N60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 150A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 96mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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IXFN66N85X | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Technology: HiPerFET™; X-Class Polarisation: unipolar Drain-source voltage: 850V Drain current: 65A Pulsed drain current: 140A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 230nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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IXFN80N50 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 300 шт |
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IXFN80N50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 66A Pulsed drain current: 200A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 65mΩ Gate charge: 195nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 300 шт |
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IXFN80N50Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 65mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFN80N60P3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXFN82N60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 72A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 200A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
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IXFN82N60Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 66A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 240A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 275nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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| IXFN90N170SK | IXYS |
IXFN90N170SK Transistor modules MOSFET |
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| IXFN90N85X | IXYS |
IXFN90N85X Transistor modules MOSFET |
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IXFN94N50P2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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IXFP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
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IXFP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns кількість в упаковці: 1 шт |
на замовлення 139 шт: термін постачання 14-21 дні (днів) |
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IXFP10N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO220AB Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFP110N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO220AB On-state resistance: 13mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns кількість в упаковці: 1 шт |
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IXFP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB On-state resistance: 0.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFP12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns кількість в упаковці: 1 шт |
на замовлення 262 шт: термін постачання 14-21 дні (днів) |
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IXFP12N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns кількість в упаковці: 300 шт |
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IXFP130N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
на замовлення 53 шт: термін постачання 14-21 дні (днів) |
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IXFP130N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO220AB On-state resistance: 9mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXFP14N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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IXFP14N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 460W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns кількість в упаковці: 1 шт |
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IXFP14N85XM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 38W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 116ns кількість в упаковці: 1 шт |
на замовлення 43 шт: термін постачання 14-21 дні (днів) |
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IXFP16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO220AB On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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IXFP16N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 227 шт: термін постачання 14-21 дні (днів) |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO220AB On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 269 шт: термін постачання 14-21 дні (днів) |
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IXFP180N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns Mounting: THT Power dissipation: 480W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 185nC Kind of channel: enhanced Case: TO220AB Reverse recovery time: 66ns Drain-source voltage: 100V Drain current: 180A On-state resistance: 6mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXFP18N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO220AB On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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IXFP18N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 290W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP18N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 135ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP20N50P3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 58W Case: TO220FP On-state resistance: 0.3Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IXFP20N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO220AB On-state resistance: 0.33Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 190ns кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 14-21 дні (днів) |
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IXFP220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns кількість в упаковці: 1 шт |
на замовлення 55 шт: термін постачання 14-21 дні (днів) |
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IXFP22N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO220AB On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 166 шт: термін постачання 14-21 дні (днів) |
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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IXFP22N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns кількість в упаковці: 1 шт |
на замовлення 296 шт: термін постачання 14-21 дні (днів) |
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IXFP230N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO220AB On-state resistance: 4.2mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 59ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP24N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO220AB On-state resistance: 0.175Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP26N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 26A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 66mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 105ns кількість в упаковці: 1 шт |
на замовлення 222 шт: термін постачання 14-21 дні (днів) |
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IXFP26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO220AB On-state resistance: 0.25Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 271 шт: термін постачання 14-21 дні (днів) |
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IXFP26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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IXFP270N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP30N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns кількість в упаковці: 1 шт |
на замовлення 300 шт: термін постачання 14-21 дні (днів) |
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IXFP30N25X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 36W Case: TO220FP On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 82ns кількість в упаковці: 1 шт |
товар відсутній |
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IXFP30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO220AB On-state resistance: 155mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns кількість в упаковці: 1 шт |
товар відсутній |
| IXFN420N10T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Technology: GigaMOS™; HiPerFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 2.3mΩ
Gate charge: 670nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 140ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN44N100P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 110A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN44N100Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 38A
Pulsed drain current: 110A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 264nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4681.22 грн |
| IXFN44N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2439.81 грн |
| 2+ | 2224.53 грн |
| 3+ | 2141.27 грн |
| IXFN44N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN48N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN50N120SIC |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate charge: 0.1µC
Reverse recovery time: 26ns
Gate-source voltage: -10...25V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate charge: 0.1µC
Reverse recovery time: 26ns
Gate-source voltage: -10...25V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6062.56 грн |
| IXFN50N120SK |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 115nC
Reverse recovery time: 54ns
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 115nC
Reverse recovery time: 54ns
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5936.22 грн |
| IXFN520N075T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
кількість в упаковці: 1 шт
товар відсутній
| IXFN52N100X |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN52N90P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
кількість в упаковці: 1 шт
товар відсутній
| IXFN56N90P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN60N80P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN62N80Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 0.27µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 0.27µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN64N50P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN64N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 96mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2507.19 грн |
| 2+ | 2285.89 грн |
| IXFN66N85X |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 230nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 230nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3034.09 грн |
| IXFN80N50 | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
| IXFN80N50P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Gate charge: 195nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 300 шт
товар відсутній
| IXFN80N50Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 63A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 65mΩ
Gate charge: 200nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFN80N60P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2043.94 грн |
| 2+ | 1863.55 грн |
| IXFN82N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| IXFN82N60Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4245.1 грн |
| IXFN94N50P2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IXFP102N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
товар відсутній
| IXFP10N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
на замовлення 139 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.4 грн |
| 3+ | 234.64 грн |
| 6+ | 179.89 грн |
| 16+ | 169.46 грн |
| IXFP10N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFP110N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO220AB; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP12N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFP12N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 1 шт
на замовлення 262 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.4 грн |
| 3+ | 234.64 грн |
| 6+ | 179.89 грн |
| 16+ | 170.33 грн |
| 50+ | 169.46 грн |
| IXFP12N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 300 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
кількість в упаковці: 300 шт
товар відсутній
| IXFP130N10T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 53 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 349.08 грн |
| 3+ | 302.32 грн |
| 5+ | 238.11 грн |
| 12+ | 225.08 грн |
| IXFP130N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 692.54 грн |
| 3+ | 471.08 грн |
| 7+ | 429.3 грн |
| IXFP14N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 330.36 грн |
| 5+ | 225.61 грн |
| 13+ | 205.09 грн |
| 1000+ | 198.14 грн |
| IXFP14N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 460W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP14N85XM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 116ns
кількість в упаковці: 1 шт
на замовлення 43 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467 грн |
| 3+ | 405.2 грн |
| 4+ | 311.98 грн |
| 9+ | 294.6 грн |
| IXFP16N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFP16N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 227 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 399.62 грн |
| 5+ | 256.29 грн |
| 12+ | 232.9 грн |
| 500+ | 226.81 грн |
| IXFP16N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 269 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 369.67 грн |
| 3+ | 320.37 грн |
| 5+ | 245.93 грн |
| 12+ | 232.9 грн |
| IXFP180N10T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Mounting: THT
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhanced
Case: TO220AB
Reverse recovery time: 66ns
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Mounting: THT
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 185nC
Kind of channel: enhanced
Case: TO220AB
Reverse recovery time: 66ns
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 445.47 грн |
| 3+ | 379.93 грн |
| 4+ | 329.36 грн |
| 9+ | 311.11 грн |
| 50+ | 305.9 грн |
| IXFP18N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 604.57 грн |
| 3+ | 464.76 грн |
| 7+ | 423.21 грн |
| 50+ | 416.26 грн |
| IXFP18N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP18N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 135ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP20N50P3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; 58W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 58W
Case: TO220FP
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| IXFP20N85X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 190ns
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 551.23 грн |
| 3+ | 423.25 грн |
| 7+ | 384.98 грн |
| 50+ | 378.89 грн |
| IXFP220N06T3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
кількість в упаковці: 1 шт
на замовлення 55 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 280.76 грн |
| 3+ | 239.15 грн |
| 5+ | 206.83 грн |
| 14+ | 195.53 грн |
| 50+ | 192.92 грн |
| IXFP22N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 166 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 423.95 грн |
| 5+ | 252.68 грн |
| 12+ | 230.29 грн |
| IXFP22N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 365.92 грн |
| 3+ | 316.76 грн |
| 5+ | 243.33 грн |
| 12+ | 230.29 грн |
| IXFP22N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
на замовлення 296 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 297.61 грн |
| 3+ | 253.59 грн |
| 5+ | 219.86 грн |
| 13+ | 207.7 грн |
| 50+ | 205.09 грн |
| IXFP230N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP24N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP26N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 26A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 105ns
кількість в упаковці: 1 шт
на замовлення 222 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.34 грн |
| 3+ | 231.93 грн |
| 5+ | 209.43 грн |
| 10+ | 200.74 грн |
| 14+ | 198.14 грн |
| 50+ | 191.18 грн |
| IXFP26N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 271 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.07 грн |
| 3+ | 456.64 грн |
| 7+ | 416.26 грн |
| IXFP26N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 741.21 грн |
| 3+ | 477.39 грн |
| 7+ | 434.51 грн |
| 1000+ | 418 грн |
| IXFP270N06T3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP30N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 436.12 грн |
| 3+ | 371.81 грн |
| 4+ | 318.06 грн |
| 9+ | 300.68 грн |
| IXFP30N25X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 36W; TO220FP; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 82ns
кількість в упаковці: 1 шт
товар відсутній
| IXFP30N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
кількість в упаковці: 1 шт
товар відсутній