Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137767) > Сторінка 1196 з 2297
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BSC030N03MSGATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC030N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC030N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3175 шт: термін постачання 14-21 дні (днів) |
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BSC031N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 139W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET кількість в упаковці: 5000 шт |
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BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1553 шт: термін постачання 14-21 дні (днів) |
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BSC032NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 84A Power dissipation: 37W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC034N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 57W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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BSC034N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC035N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 69W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 92A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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BSC035N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC036NE7NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 156W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET кількість в упаковці: 5000 шт |
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BSC037N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Power dissipation: 114W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET кількість в упаковці: 5000 шт |
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BSC039N06NS | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC040N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8 Power dissipation: 104W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 80V Drain current: 100A On-state resistance: 4mΩ Type of transistor: N-MOSFET кількість в упаковці: 5000 шт |
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BSC040N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 104W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC042N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8 Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 30V Drain current: 75A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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BSC042N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8 Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 30V Drain current: 82A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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BSC042NE7NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8 Drain-source voltage: 75V Drain current: 100A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 кількість в упаковці: 5000 шт |
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BSC046N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC047N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8 Drain-source voltage: 80V Drain current: 100A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 кількість в упаковці: 5000 шт |
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BSC0501NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC0503NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Technology: OptiMOS™ 5 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 1.9mΩ Power dissipation: 50W Drain current: 100A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar кількість в упаковці: 1 шт |
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BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 30W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.7mΩ Drain current: 64A Technology: OptiMOS™ 5 Kind of channel: enhanced Drain-source voltage: 30V Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
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BSC050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 72A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC050N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC050NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC052N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Drain current: 95A Drain-source voltage: 80V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar кількість в упаковці: 1 шт |
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 81A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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BSC057N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8 Drain-source voltage: 30V Drain current: 58A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 кількість в упаковці: 1 шт |
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BSC057N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8 Drain-source voltage: 30V Drain current: 71A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD Case: PG-TDSON-8 кількість в упаковці: 1 шт |
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BSC057N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC059N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 38W Case: PG-TDSON-8 FL On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC059N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC060N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC060P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: -30V Drain current: -100A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±25V кількість в упаковці: 5000 шт |
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BSC061N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 74W On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Drain current: 82A Drain-source voltage: 80V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar кількість в упаковці: 5000 шт |
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSC067N06LS3GATMA1 | INFINEON TECHNOLOGIES |
BSC067N06LS3GATMA1 SMD N channel transistors |
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BSC070N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC070N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC076N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC077N12NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 98A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC080N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2546 шт: термін постачання 14-21 дні (днів) |
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BSC082N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSC084P03NS3EGATMA1 | INFINEON TECHNOLOGIES |
BSC084P03NS3EGATMA SMD P channel transistors |
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| BSC084P03NS3GATMA1 | INFINEON TECHNOLOGIES |
BSC084P03NS3GATMA1 SMD P channel transistors |
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BSC0901NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC0901NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC0902NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 91A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4614 шт: термін постачання 14-21 дні (днів) |
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BSC0904NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 37W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC0906NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3031 шт: термін постачання 14-21 дні (днів) |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 689 шт: термін постачання 14-21 дні (днів) |
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BSC090N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSC0910NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSC0911NDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC0923NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
| BSC030N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC030N04NSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC030N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC030P03NS3GAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3175 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.29 грн |
| 3+ | 197.07 грн |
| 10+ | 169.56 грн |
| 11+ | 97.52 грн |
| 29+ | 92.25 грн |
| 5000+ | 88.74 грн |
| BSC031N06NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
товар відсутній
| BSC032N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1553 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.88 грн |
| 5+ | 78.46 грн |
| 17+ | 60.62 грн |
| 47+ | 57.11 грн |
| 500+ | 56.23 грн |
| BSC032NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC034N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 57W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 57W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| BSC034N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC035N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 92A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 92A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| BSC035N10NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC036NE7NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
товар відсутній
| BSC037N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 114W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 114W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
товар відсутній
| BSC039N06NS |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC040N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Power dissipation: 104W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Power dissipation: 104W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5000 шт
товар відсутній
| BSC040N10NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC042N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| BSC042N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 82A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 82A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| BSC042NE7NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 5000 шт
товар відсутній
| BSC046N10NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC047N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 5000 шт
товар відсутній
| BSC0501NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC0503NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| BSC0504NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Technology: OptiMOS™ 5
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Technology: OptiMOS™ 5
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
товар відсутній
| BSC050N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC050N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC050N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC050NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC052N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 95A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 95A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| BSC054N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| BSC057N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 1 шт
товар відсутній
| BSC057N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 71A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 71A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: PG-TDSON-8
кількість в упаковці: 1 шт
товар відсутній
| BSC057N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC059N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC059N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC060N10NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC060P03NS3EGATMA |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±25V
кількість в упаковці: 5000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±25V
кількість в упаковці: 5000 шт
товар відсутній
| BSC061N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 5000 шт
товар відсутній
| BSC066N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC067N06LS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
BSC067N06LS3GATMA1 SMD N channel transistors
BSC067N06LS3GATMA1 SMD N channel transistors
товар відсутній
| BSC070N10NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC070N10NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC072N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC076N06NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC077N12NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 98A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 98A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC080N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2546 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 35.67 грн |
| 25+ | 30.47 грн |
| 39+ | 26.35 грн |
| 100+ | 26.27 грн |
| 107+ | 24.92 грн |
| 250+ | 24.51 грн |
| 1000+ | 23.98 грн |
| BSC082N10LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC084P03NS3EGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
BSC084P03NS3EGATMA SMD P channel transistors
BSC084P03NS3EGATMA SMD P channel transistors
товар відсутній
| BSC084P03NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
BSC084P03NS3GATMA1 SMD P channel transistors
BSC084P03NS3GATMA1 SMD P channel transistors
товар відсутній
| BSC0901NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC0901NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC0902NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC0902NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4614 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.78 грн |
| 22+ | 48.36 грн |
| 61+ | 44.02 грн |
| 1000+ | 43.4 грн |
| BSC0904NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC0906NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3031 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.98 грн |
| 25+ | 35.49 грн |
| 39+ | 26.62 грн |
| 100+ | 25.74 грн |
| 106+ | 25.13 грн |
| 250+ | 24.25 грн |
| BSC0909NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 689 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 25.83 грн |
| 25+ | 21.99 грн |
| 54+ | 19.24 грн |
| 100+ | 19.06 грн |
| 147+ | 18.19 грн |
| 250+ | 17.75 грн |
| 1000+ | 17.48 грн |
| BSC090N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC0910NDIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC0911NDATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC0923NDIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній