Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 1192 з 2275
Фото | Назва | Виробник | Інформація |
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BSS215PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4150 шт: термін постачання 14-21 дні (днів) |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1365 шт: термін постачання 14-21 дні (днів) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.09A Power dissipation: 1W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 45Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 545 шт: термін постачання 14-21 дні (днів) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.3A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 7555 шт: термін постачання 14-21 дні (днів) |
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BSS308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2071 шт: термін постачання 14-21 дні (днів) |
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Mounting: SMD Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Case: PG-SOT23 кількість в упаковці: 1 шт |
на замовлення 2277 шт: термін постачання 14-21 дні (днів) |
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BSS315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Mounting: SMD Technology: OptiMOS™ P2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Case: PG-SOT23 кількість в упаковці: 1 шт |
на замовлення 5088 шт: термін постачання 14-21 дні (днів) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Mounting: SMD Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 1.4A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Case: SOT23 кількість в упаковці: 1 шт |
на замовлення 12710 шт: термін постачання 14-21 дні (днів) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 0.54A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 7874 шт: термін постачання 14-21 дні (днів) |
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BSS7728NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2980 шт: термін постачання 14-21 дні (днів) |
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BSS806NEH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 82mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.3A кількість в упаковці: 1 шт |
на замовлення 2830 шт: термін постачання 14-21 дні (днів) |
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BSS806NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 82mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.3A кількість в упаковці: 1 шт |
на замовлення 7206 шт: термін постачання 14-21 дні (днів) |
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BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 4174 шт: термін постачання 14-21 дні (днів) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1881 шт: термін постачання 14-21 дні (днів) |
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BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.14A Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.37nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2298 шт: термін постачання 14-21 дні (днів) |
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BSS84PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.15A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 0.37nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 7934 шт: термін постачання 14-21 дні (днів) |
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BSS87H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.26A Power dissipation: 1W Case: SOT89-4 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1269 шт: термін постачання 14-21 дні (днів) |
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BSV236SPH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Power dissipation: 0.56W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ014NE2LS5IFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.45mΩ Gate-source voltage: ±16V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.8mΩ Gate-source voltage: ±20V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 кількість в упаковці: 1 шт |
на замовлення 4974 шт: термін постачання 14-21 дні (днів) |
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BSZ018NE2LSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ Case: PG-TSDSON-8 Mounting: SMD On-state resistance: 1.8mΩ Power dissipation: 69W Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar кількість в упаковці: 1 шт |
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BSZ019N03LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ025N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Technology: OptiMOS™ Drain-source voltage: 40V Drain current: 40A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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BSZ028N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Power dissipation: 50W Type of transistor: N-MOSFET On-state resistance: 2.8mΩ Drain current: 20A Technology: OptiMOS™ 3 Kind of channel: enhanced Drain-source voltage: 40V Gate-source voltage: ±20V Case: PG-TSDSON-8 кількість в упаковці: 1 шт |
товар відсутній |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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BSZ035N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ кількість в упаковці: 1 шт |
товар відсутній |
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BSZ035N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ кількість в упаковці: 5000 шт |
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BSZ036NE2LSATMA1 | INFINEON TECHNOLOGIES |
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BSZ040N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3654 шт: термін постачання 14-21 дні (днів) |
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BSZ042N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ0506NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 27W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ050N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ058N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 26W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSZ067N06LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8 Power dissipation: 69W Type of transistor: N-MOSFET Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 20A On-state resistance: 6.7mΩ Case: PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Technology: OptiMOS™ 3 кількість в упаковці: 1 шт |
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BSZ068N06NSATMA1 | INFINEON TECHNOLOGIES |
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BSZ075N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Polarisation: unipolar Drain current: 40A Drain-source voltage: 80V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.5mΩ Power dissipation: 69W кількість в упаковці: 5000 шт |
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BSZ084N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSZ086P03NS3EGATMA | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 69W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ кількість в упаковці: 1 шт |
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BSZ086P03NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 52W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ кількість в упаковці: 5000 шт |
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BSZ088N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ кількість в упаковці: 1 шт |
товар відсутній |
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BSZ088N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.8mΩ кількість в упаковці: 1 шт |
товар відсутній |
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BSZ0901NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSZ0901NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSZ0902NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ0902NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ0909NSATMA1 | INFINEON TECHNOLOGIES |
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товар відсутній |
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BSZ096N10LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 160A Power dissipation: 69W Case: PG-TSDSON-8FL Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ097N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.7mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 кількість в упаковці: 1 шт |
на замовлення 4970 шт: термін постачання 14-21 дні (днів) |
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BSZ097N10NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ0994NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.1W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 5.2nC Kind of channel: enhanced |
товар відсутній |
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BSZ099N06LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Power dissipation: 36W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.9mΩ Mounting: SMD Gate charge: 6.9nC Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ100N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSZ100N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 30W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSZ100N06LS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8 Drain current: 20A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 60V кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ100N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8 Drain current: 40A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 60V кількість в упаковці: 5000 шт |
товар відсутній |
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BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Drain-source voltage: 40V Drain current: 29A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Case: PG-TSDSON-8 Mounting: SMD Gate charge: 13nC Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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BSZ110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
BSS215PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 4150 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 23.74 грн |
15+ | 18.31 грн |
50+ | 12.17 грн |
100+ | 10.85 грн |
168+ | 6.17 грн |
461+ | 5.82 грн |
9000+ | 5.64 грн |
BSS223PWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1365 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.94 грн |
19+ | 14.93 грн |
25+ | 11.6 грн |
50+ | 9.54 грн |
100+ | 7.84 грн |
227+ | 4.59 грн |
622+ | 4.33 грн |
BSS225H6327FTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 545 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.63 грн |
10+ | 38.82 грн |
49+ | 21.25 грн |
135+ | 20.1 грн |
500+ | 19.93 грн |
1000+ | 19.31 грн |
BSS306NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 7555 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 10.26 грн |
35+ | 8.24 грн |
100+ | 7.05 грн |
175+ | 6 грн |
470+ | 5.64 грн |
BSS308PEH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2071 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.08 грн |
11+ | 25.18 грн |
25+ | 17.46 грн |
100+ | 14.28 грн |
141+ | 7.32 грн |
386+ | 6.88 грн |
BSS314PEH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
кількість в упаковці: 1 шт
на замовлення 2277 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.34 грн |
13+ | 22.43 грн |
50+ | 14.2 грн |
100+ | 11.73 грн |
211+ | 4.94 грн |
578+ | 4.67 грн |
BSS315PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
кількість в упаковці: 1 шт
на замовлення 5088 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.23 грн |
12+ | 23.44 грн |
50+ | 13.67 грн |
100+ | 11.9 грн |
159+ | 6.52 грн |
435+ | 6.17 грн |
6000+ | 6 грн |
BSS316NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: SOT23
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.4A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: SOT23
кількість в упаковці: 1 шт
на замовлення 12710 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.79 грн |
17+ | 16.3 грн |
50+ | 10 грн |
100+ | 8.07 грн |
226+ | 4.59 грн |
620+ | 4.35 грн |
1500+ | 4.23 грн |
BSS606NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSS670S2LH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 0.54A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7874 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.39 грн |
11+ | 25.82 грн |
25+ | 17.67 грн |
50+ | 14.37 грн |
100+ | 11.54 грн |
245+ | 4.22 грн |
672+ | 3.99 грн |
BSS7728NH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2980 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.83 грн |
100+ | 7.43 грн |
217+ | 4.73 грн |
596+ | 4.47 грн |
BSS806NEH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
кількість в упаковці: 1 шт
на замовлення 2830 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
33+ | 8.64 грн |
100+ | 7.23 грн |
211+ | 4.94 грн |
578+ | 4.59 грн |
3000+ | 4.5 грн |
BSS806NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.3A
кількість в упаковці: 1 шт
на замовлення 7206 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.08 грн |
12+ | 24.36 грн |
25+ | 13.84 грн |
100+ | 10.05 грн |
152+ | 6.79 грн |
419+ | 6.44 грн |
30000+ | 6.17 грн |
BSS816NWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 4174 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 9.69 грн |
50+ | 5.49 грн |
100+ | 4.76 грн |
275+ | 3.79 грн |
760+ | 3.53 грн |
BSS83PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1881 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.59 грн |
13+ | 21.98 грн |
50+ | 15.08 грн |
100+ | 12.61 грн |
191+ | 5.47 грн |
527+ | 5.11 грн |
BSS84PH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2298 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.49 грн |
15+ | 19.59 грн |
50+ | 10.6 грн |
100+ | 8.96 грн |
250+ | 7.24 грн |
350+ | 2.96 грн |
961+ | 2.8 грн |
BSS84PWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 0.37nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7934 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.54 грн |
16+ | 17.4 грн |
50+ | 9.77 грн |
100+ | 8.36 грн |
250+ | 6.84 грн |
352+ | 2.95 грн |
968+ | 2.79 грн |
BSS87H6327FTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.26A; 1W; SOT89-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.26A
Power dissipation: 1W
Case: SOT89-4
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1269 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.82 грн |
25+ | 21.88 грн |
63+ | 16.58 грн |
172+ | 15.69 грн |
250+ | 15.08 грн |
BSV236SPH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.56W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Power dissipation: 0.56W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ014NE2LS5IFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.45mΩ
Gate-source voltage: ±16V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.45mΩ
Gate-source voltage: ±16V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
кількість в упаковці: 5000 шт
товар відсутній
BSZ018NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
на замовлення 4974 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 114.9 грн |
17+ | 62.95 грн |
45+ | 57.31 грн |
BSZ018NE2LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™
Case: PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Power dissipation: 69W
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™
Case: PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Power dissipation: 69W
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
BSZ019N03LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ025N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Technology: OptiMOS™
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Technology: OptiMOS™
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
BSZ028N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 2.8mΩ
Drain current: 20A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 50W
Type of transistor: N-MOSFET
On-state resistance: 2.8mΩ
Drain current: 20A
Technology: OptiMOS™ 3
Kind of channel: enhanced
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
товар відсутній
BSZ034N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
BSZ035N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
кількість в упаковці: 1 шт
товар відсутній
BSZ035N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
кількість в упаковці: 5000 шт
товар відсутній
BSZ036NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
BSZ036NE2LSATMA1 SMD N channel transistors
BSZ036NE2LSATMA1 SMD N channel transistors
товар відсутній
BSZ040N04LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3654 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.81 грн |
5+ | 65.38 грн |
22+ | 48.05 грн |
25+ | 47.97 грн |
60+ | 45.41 грн |
100+ | 43.91 грн |
1000+ | 43.65 грн |
BSZ042N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ0506NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ050N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ050N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ058N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ065N03LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ067N06LS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Power dissipation: 69W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 6.7mΩ
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 69W; PG-TSDSON-8
Power dissipation: 69W
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 20A
On-state resistance: 6.7mΩ
Case: PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Technology: OptiMOS™ 3
кількість в упаковці: 1 шт
товар відсутній
BSZ068N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
BSZ068N06NSATMA1 SMD N channel transistors
BSZ068N06NSATMA1 SMD N channel transistors
товар відсутній
BSZ075N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 80V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Power dissipation: 69W
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 80V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Power dissipation: 69W
кількість в упаковці: 5000 шт
товар відсутній
BSZ084N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ086P03NS3EGATMA |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
кількість в упаковці: 1 шт
товар відсутній
BSZ086P03NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
кількість в упаковці: 5000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
кількість в упаковці: 5000 шт
товар відсутній
BSZ088N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
кількість в упаковці: 1 шт
товар відсутній
BSZ088N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
кількість в упаковці: 1 шт
товар відсутній
BSZ0901NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ0901NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ0902NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ0902NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ0909NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
BSZ0909NSATMA1 SMD N channel transistors
BSZ0909NSATMA1 SMD N channel transistors
товар відсутній
BSZ096N10LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ097N04LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
кількість в упаковці: 1 шт
на замовлення 4970 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.17 грн |
7+ | 41.2 грн |
25+ | 35.01 грн |
35+ | 30.33 грн |
94+ | 28.66 грн |
1000+ | 28.3 грн |
BSZ097N10NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ0994NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
товар відсутній
BSZ099N06LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
BSZ100N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ100N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
BSZ100N06LS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Drain current: 20A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Drain current: 20A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
кількість в упаковці: 5000 шт
товар відсутній
BSZ100N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Drain current: 40A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Drain current: 40A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
кількість в упаковці: 5000 шт
товар відсутній
BSZ105N04NSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 29A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Gate charge: 13nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 29A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Gate charge: 13nC
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
BSZ110N06NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній