Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137767) > Сторінка 1195 з 2297
| Фото | Назва | Виробник | Інформація |
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| BGS12P2L6E6327XTSA1 | INFINEON TECHNOLOGIES |
 Category: Analog multiplexers and switchesDescription: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz Supply voltage: 1.65...3.4V DC Application: telecommunication Output configuration: SPDT Mounting: SMD Case: TSLP-6-4 Type of integrated circuit: RF switch Bandwidth: 0.05...6GHz кількість в упаковці: 15000 шт |
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| BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Supply voltage: 1.8...3.5V DC Application: telecommunication Output configuration: SPDT Mounting: SMD Case: TSNP6 Type of integrated circuit: RF switch Number of channels: 2 Bandwidth: 0.1...6GHz кількість в упаковці: 15000 шт |
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BGS13S4N9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz Type of integrated circuit: RF switch Case: TSNP9 Mounting: SMD Number of channels: 3 Application: telecommunication Supply voltage: 1.8...3.3V DC Output configuration: SP3T Bandwidth: 0.1...3GHz кількість в упаковці: 15000 шт |
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| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Type of integrated circuit: RF switch Case: ATSLP-9-3 Mounting: SMD Number of channels: 4 Application: telecommunication Interface: MIPI Supply voltage: 1.65...1.95V DC Output configuration: SP4T Bandwidth: 0.05...6GHz кількість в упаковці: 1 шт |
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| BGSA14GN10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz Type of integrated circuit: RF switch Case: TSNP10 Mounting: SMD Number of channels: 4 Application: telecommunication Supply voltage: 1.8...3.6V DC Output configuration: SP4T Bandwidth: 0.1...5GHz кількість в упаковці: 7500 шт |
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BGSX22G2A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz Output configuration: DPDT Supply voltage: 1.65...3.4V DC Application: telecommunication Case: ATSLP-10-2 Mounting: SMD Bandwidth: 0.1...6GHz Number of channels: 2 Type of integrated circuit: RF switch кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 14-21 дні (днів) |
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| BGSX22G5A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Case: ATSLP-10-5 Mounting: SMD Number of channels: 2 Application: telecommunication Supply voltage: 1.65...3.4V DC Output configuration: DPDT Bandwidth: 0.1...6GHz кількість в упаковці: 1 шт |
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| BGSX24MU16E6327XUSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz Type of integrated circuit: RF switch Case: ULGA16-1 Mounting: SMD Application: telecommunication Interface: MIPI Supply voltage: 1.65...3.4V DC Output configuration: DP4T Bandwidth: 0.1...5GHz кількість в упаковці: 4500 шт |
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BGT24LTR11N16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape Case: TSNP16 Mounting: SMD Kind of package: reel; tape Frequency: 24...24.25GHz Operating temperature: -40...85°C Noise Figure: 10dB Open-loop gain: 26dB DC supply current: 45mA Type of integrated circuit: interface Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: MMIC; RF transceiver Supply voltage: 3.2...3.4V DC кількість в упаковці: 3000 шт |
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BGT24MTR11E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Interface: SPI Case: VQFN32 Mounting: SMD Operating temperature: -40...105°C Frequency: 24...26GHz Kind of package: reel; tape Supply voltage: 3.135...3.465V DC DC supply current: 150mA Number of receivers: 1 Open-loop gain: 26dB Number of transmitters: 1 Noise Figure: 12dB кількість в упаковці: 1000 шт |
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BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - others Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Type of integrated circuit: interface Kind of integrated circuit: MMIC; RF transceiver Interface: SPI Case: VQFN32 Mounting: SMD Operating temperature: -40...105°C Frequency: 24...24.25GHz Kind of package: reel; tape Supply voltage: 3.135...3.465V DC DC supply current: 210mA Number of receivers: 2 Open-loop gain: 26dB Number of transmitters: 1 Noise Figure: 12dB кількість в упаковці: 1 шт |
на замовлення 475 шт: термін постачання 14-21 дні (днів) |
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BGX50AE6327 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 0.14A Semiconductor structure: bridge rectifier Power dissipation: 0.21W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Case: SOT143 кількість в упаковці: 1 шт |
на замовлення 2990 шт: термін постачання 14-21 дні (днів) |
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| BSB008NE2LXXUMA1 | INFINEON TECHNOLOGIES |
BSB008NE2LXXUMA1 SMD N channel transistors |
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Technology: OptiMOS™ Mounting: SMD Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 кількість в упаковці: 5000 шт |
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BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5000 шт |
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BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSB028N06NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: CanPAK™ M; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSB044N08NN3GXUMA1 | INFINEON TECHNOLOGIES |
BSB044N08NN3GXUMA1 SMD N channel transistors |
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BSB056N10NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 78W Case: CanPAK™ MN; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSB104N08NP3GXUSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A кількість в упаковці: 5000 шт |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ кількість в упаковці: 5000 шт |
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BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Technology: OptiMOS™ кількість в упаковці: 5000 шт |
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BSC007N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 138W Case: PG-TDSON-8 FL On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSC009NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC009NE2LS5IATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC009NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC010N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: PG-TDSON-8 FL On-state resistance: 1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC010NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC010NE2LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 38A Power dissipation: 96W Case: PG-TDSON-8 On-state resistance: 1.05mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC011N03LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC011N03LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC014N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC014N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC014N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC014N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC014NE2LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC016N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC016N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC016N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC017N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC018N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC019N02KSGAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 104W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Polarisation: unipolar Power dissipation: 104W Type of transistor: N-MOSFET On-state resistance: 1.95mΩ Drain current: 100A Drain-source voltage: 20V кількість в упаковці: 5000 шт |
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BSC019N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC019N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSC022N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 79W Case: PG-TDSON-8 FL On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC022N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC024NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 25A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC025N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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BSC026N02KSGAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Polarisation: unipolar Power dissipation: 78W Type of transistor: N-MOSFET On-state resistance: 2.6mΩ Drain current: 100A Drain-source voltage: 20V кількість в упаковці: 5000 шт |
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BSC026N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 63W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC026N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC026NE2LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 66A Power dissipation: 29W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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BSC027N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
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| BSC027N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Technology: OptiMOS® Drain current: 84A Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Polarisation: unipolar кількість в упаковці: 5000 шт |
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BSC028N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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BSC028N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3948 шт: термін постачання 14-21 дні (днів) |
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BSC030N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 98A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
| BGS12P2L6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSLP-6-4
Type of integrated circuit: RF switch
Bandwidth: 0.05...6GHz
кількість в упаковці: 15000 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSLP-6-4
Type of integrated circuit: RF switch
Bandwidth: 0.05...6GHz
кількість в упаковці: 15000 шт
товар відсутній
| BGS12SN6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSNP6
Type of integrated circuit: RF switch
Number of channels: 2
Bandwidth: 0.1...6GHz
кількість в упаковці: 15000 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Supply voltage: 1.8...3.5V DC
Application: telecommunication
Output configuration: SPDT
Mounting: SMD
Case: TSNP6
Type of integrated circuit: RF switch
Number of channels: 2
Bandwidth: 0.1...6GHz
кількість в упаковці: 15000 шт
товар відсутній
| BGS13S4N9E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Case: TSNP9
Mounting: SMD
Number of channels: 3
Application: telecommunication
Supply voltage: 1.8...3.3V DC
Output configuration: SP3T
Bandwidth: 0.1...3GHz
кількість в упаковці: 15000 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Case: TSNP9
Mounting: SMD
Number of channels: 3
Application: telecommunication
Supply voltage: 1.8...3.3V DC
Output configuration: SP3T
Bandwidth: 0.1...3GHz
кількість в упаковці: 15000 шт
товар відсутній
| BGS14MPA9E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-9-3
Mounting: SMD
Number of channels: 4
Application: telecommunication
Interface: MIPI
Supply voltage: 1.65...1.95V DC
Output configuration: SP4T
Bandwidth: 0.05...6GHz
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-9-3
Mounting: SMD
Number of channels: 4
Application: telecommunication
Interface: MIPI
Supply voltage: 1.65...1.95V DC
Output configuration: SP4T
Bandwidth: 0.05...6GHz
кількість в упаковці: 1 шт
товар відсутній
| BGSA14GN10E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: TSNP10
Mounting: SMD
Number of channels: 4
Application: telecommunication
Supply voltage: 1.8...3.6V DC
Output configuration: SP4T
Bandwidth: 0.1...5GHz
кількість в упаковці: 7500 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: TSNP10
Mounting: SMD
Number of channels: 4
Application: telecommunication
Supply voltage: 1.8...3.6V DC
Output configuration: SP4T
Bandwidth: 0.1...5GHz
кількість в упаковці: 7500 шт
товар відсутній
| BGSX22G2A10E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Case: ATSLP-10-2
Mounting: SMD
Bandwidth: 0.1...6GHz
Number of channels: 2
Type of integrated circuit: RF switch
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Supply voltage: 1.65...3.4V DC
Application: telecommunication
Case: ATSLP-10-2
Mounting: SMD
Bandwidth: 0.1...6GHz
Number of channels: 2
Type of integrated circuit: RF switch
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.42 грн |
| 5+ | 68.43 грн |
| 18+ | 59.74 грн |
| 25+ | 58.86 грн |
| 48+ | 56.23 грн |
| 100+ | 55.35 грн |
| BGSX22G5A10E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-5
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-5
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
кількість в упаковці: 1 шт
товар відсутній
| BGSX24MU16E6327XUSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: ULGA16-1
Mounting: SMD
Application: telecommunication
Interface: MIPI
Supply voltage: 1.65...3.4V DC
Output configuration: DP4T
Bandwidth: 0.1...5GHz
кількість в упаковці: 4500 шт
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: ULGA16-1
Mounting: SMD
Application: telecommunication
Interface: MIPI
Supply voltage: 1.65...3.4V DC
Output configuration: DP4T
Bandwidth: 0.1...5GHz
кількість в упаковці: 4500 шт
товар відсутній
| BGT24LTR11N16E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Noise Figure: 10dB
Open-loop gain: 26dB
DC supply current: 45mA
Type of integrated circuit: interface
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
кількість в упаковці: 3000 шт
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Case: TSNP16
Mounting: SMD
Kind of package: reel; tape
Frequency: 24...24.25GHz
Operating temperature: -40...85°C
Noise Figure: 10dB
Open-loop gain: 26dB
DC supply current: 45mA
Type of integrated circuit: interface
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: MMIC; RF transceiver
Supply voltage: 3.2...3.4V DC
кількість в упаковці: 3000 шт
товар відсутній
| BGT24MTR11E6327XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
кількість в упаковці: 1000 шт
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
кількість в упаковці: 1000 шт
товар відсутній
| BGT24MTR12E6327XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
кількість в упаковці: 1 шт
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
кількість в упаковці: 1 шт
на замовлення 475 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 913.98 грн |
| BGX50AE6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT143
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT143
кількість в упаковці: 1 шт
на замовлення 2990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 12.11 грн |
| 100+ | 10.49 грн |
| 133+ | 7.82 грн |
| 364+ | 7.38 грн |
| 3000+ | 7.2 грн |
| BSB008NE2LXXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
BSB008NE2LXXUMA1 SMD N channel transistors
BSB008NE2LXXUMA1 SMD N channel transistors
товар відсутній
| BSB012NE2LXIXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
товар відсутній
| BSB013NE2LXIXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
кількість в упаковці: 5000 шт
товар відсутній
| BSB014N04LX3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
товар відсутній
| BSB015N04NX3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSB028N06NN3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 78W
Case: CanPAK™ M; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSB044N08NN3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
BSB044N08NN3GXUMA1 SMD N channel transistors
BSB044N08NN3GXUMA1 SMD N channel transistors
товар відсутній
| BSB056N10NN3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 78W
Case: CanPAK™ MN; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSB104N08NP3GXUSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
On-state resistance: 10.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 32A
кількість в упаковці: 5000 шт
товар відсутній
| BSB165N15NZ3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
кількість в упаковці: 5000 шт
товар відсутній
| BSB280N15NZ3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
кількість в упаковці: 5000 шт
товар відсутній
| BSC007N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 138W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 138W
Case: PG-TDSON-8 FL
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC009NE2LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC009NE2LS5IATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC009NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC010N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8 FL
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC010N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC010N04LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC010NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC010NE2LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC011N03LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC011N03LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC014N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC014N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC014N04LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC014N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC014NE2LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC016N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC016N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC016N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC017N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC018N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC019N02KSGAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 104W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 104W
Type of transistor: N-MOSFET
On-state resistance: 1.95mΩ
Drain current: 100A
Drain-source voltage: 20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 104W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 104W
Type of transistor: N-MOSFET
On-state resistance: 1.95mΩ
Drain current: 100A
Drain-source voltage: 20V
кількість в упаковці: 5000 шт
товар відсутній
| BSC019N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC019N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC022N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC022N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC024NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC025N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| BSC026N02KSGAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 78W
Type of transistor: N-MOSFET
On-state resistance: 2.6mΩ
Drain current: 100A
Drain-source voltage: 20V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 78W
Type of transistor: N-MOSFET
On-state resistance: 2.6mΩ
Drain current: 100A
Drain-source voltage: 20V
кількість в упаковці: 5000 шт
товар відсутній
| BSC026N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC026N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC026NE2LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC027N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC027N06LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain current: 84A
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Polarisation: unipolar
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain current: 84A
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Polarisation: unipolar
кількість в упаковці: 5000 шт
товар відсутній
| BSC028N06LS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
| BSC028N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3948 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.1 грн |
| 10+ | 113.13 грн |
| 26+ | 102.79 грн |
| 1000+ | 99.28 грн |
| BSC030N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній