BSC084P03NS3EGATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V
на замовлення 4681 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 532+ | 39.45 грн |
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Технічний опис BSC084P03NS3EGATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 110µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V.
Інші пропозиції BSC084P03NS3EGATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSC084P03NS3EGATMA1 | Виробник : INFINEON TECHNOLOGIES |
BSC084P03NS3EGATMA SMD P channel transistors |
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BSC084P03NS3EGATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 14.9A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 110µA Supplier Device Package: PG-TDSON-8-5 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V |
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BSC084P03NS3EGATMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 30V 14.9A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 110µA Supplier Device Package: PG-TDSON-8-5 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V |
товар відсутній |