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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES irf6646pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
товар відсутній
IRF6655TRPBF IRF6655TRPBF INFINEON TECHNOLOGIES irf6655pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
товар відсутній
IRF7606TRPBF IRF7606TRPBF INFINEON TECHNOLOGIES irf7606pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: Micro8
Drain-source voltage: -30V
Drain current: -3.6A
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
товар відсутній
IRF6712STRPBF IRF6712STRPBF INFINEON TECHNOLOGIES irf6712spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
товар відсутній
IRF6714MTRPBF IRF6714MTRPBF INFINEON TECHNOLOGIES irf6714mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET
Mounting: SMD
Kind of package: reel
Drain-source voltage: 25V
Drain current: 166A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
товар відсутній
IPP019N08NF2SAKMA1 INFINEON TECHNOLOGIES IPP019N08NF2S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES IPP020N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+533.18 грн
3+ 342.65 грн
7+ 323.77 грн
IPP023NE7N3GXKSA1 IPP023NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP023NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP027N08N5AKSA1 IPP027N08N5AKSA1 INFINEON TECHNOLOGIES IPP027N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP029N06NAKSA1 IPP029N06NAKSA1 INFINEON TECHNOLOGIES IPP029N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES IPP034N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+211.08 грн
3+ 172.78 грн
6+ 150.27 грн
16+ 142.29 грн
50+ 141.56 грн
Мінімальне замовлення: 2
IPP037N06L3GXKSA1 IPP037N06L3GXKSA1 INFINEON TECHNOLOGIES IPP037N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP039N04LGXKSA1 IPP039N04LGXKSA1 INFINEON TECHNOLOGIES IPP039N04LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Case: PG-TO220-3
Power dissipation: 94W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
5+79.74 грн
10+ 58.08 грн
18+ 47.91 грн
Мінімальне замовлення: 5
IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES IPP041N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES IPP041N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Power dissipation: 300W
товар відсутній
IPP042N03LGXKSA1 IPP042N03LGXKSA1 INFINEON TECHNOLOGIES IPP042N03LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
5+81.31 грн
6+ 67.51 грн
17+ 51.54 грн
45+ 48.64 грн
Мінімальне замовлення: 5
IPP048N04NGXKSA1 IPP048N04NGXKSA1 INFINEON TECHNOLOGIES IPP048N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+265.81 грн
Мінімальне замовлення: 2
IPP04CN10NGXKSA1 IPP04CN10NGXKSA1 INFINEON TECHNOLOGIES IPP04CN10NG.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP052N08N5AKSA1 IPP052N08N5AKSA1 INFINEON TECHNOLOGIES IPP052N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP05CN10NGXKSA1 INFINEON TECHNOLOGIES Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPP062NE7N3GXKSA1 IPP062NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP062NE7N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 2153 шт:
термін постачання 21-30 дні (днів)
4+97.72 грн
5+ 82.76 грн
14+ 65.34 грн
37+ 61.71 грн
500+ 58.8 грн
Мінімальне замовлення: 4
IPD25CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD78CN10NGATMA1 IPD78CN10NGATMA1 INFINEON TECHNOLOGIES IPD78CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES IPP120N20NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товар відсутній
IPD70R600P7SAUMA1 IPD70R600P7SAUMA1 INFINEON TECHNOLOGIES IPD70R600P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
на замовлення 2433 шт:
термін постачання 21-30 дні (днів)
5+83.65 грн
6+ 70.42 грн
16+ 53.72 грн
43+ 50.82 грн
Мінімальне замовлення: 5
IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ50N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 151W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™ 2
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
IKY50N120CH3XKSA1 INFINEON TECHNOLOGIES IKY50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 60ns
Turn-off time: 325ns
Type of transistor: IGBT
Power dissipation: 173W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™
Kind of package: tube
Mounting: THT
Case: TO247PLUS-4
товар відсутній
IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES IRLS3813TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BTF3035EJXUMA1 INFINEON TECHNOLOGIES BTF3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 32mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1.75W
Turn-on time: 1.35µs
Turn-off time: 2µs
товар відсутній
BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
на замовлення 1330 шт:
термін постачання 21-30 дні (днів)
4+94.37 грн
10+ 88.57 грн
15+ 58.8 грн
40+ 55.17 грн
1000+ 52.99 грн
Мінімальне замовлення: 4
IAUA200N04S5N010AUMA1 INFINEON TECHNOLOGIES IAUA200N04S5N010.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
IRFR8314TRPBF IRFR8314TRPBF INFINEON TECHNOLOGIES IRFR8314TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
7+52.99 грн
19+ 46.46 грн
51+ 43.56 грн
Мінімальне замовлення: 7
IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES IPA80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES IPD80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
7+57.85 грн
8+ 47.19 грн
22+ 38.91 грн
Мінімальне замовлення: 7
IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 344 шт:
термін постачання 21-30 дні (днів)
7+60.98 грн
8+ 50.82 грн
22+ 39.2 грн
60+ 37.02 грн
Мінімальне замовлення: 7
BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES BSC030N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
IAUZ30N08S5N186ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IPB030N08N3GATMA1 IPB030N08N3GATMA1 INFINEON TECHNOLOGIES IPB030N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD30N10S3L34ATMA1 INFINEON TECHNOLOGIES Infineon-IPD30N10S3L_34-DS-v01_01-en.pdf?fileId=db3a30431a5c32f2011a908963135956&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IAUZ30N10S5L240ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
BSC030N03LSGATMA1 BSC030N03LSGATMA1 INFINEON TECHNOLOGIES BSC030N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 98A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
BSC030N03MSGATMA1 BSC030N03MSGATMA1 INFINEON TECHNOLOGIES BSC030N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES BSC039N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Technology: OptiMOS™
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
товар відсутній
FF500R17KE4BOSA1 INFINEON TECHNOLOGIES FF500R17KE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 500A
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
товар відсутній
ETD480N22P60HPSA1 INFINEON TECHNOLOGIES ETD480N22P60_ETT480N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 480A; BG-PB60ECO-1; Ufmax: 1.83V
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Max. load current: 700A
Type of module: diode-thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
товар відсутній
ICL8800XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товар відсутній
TT215N20KOF  TT215N20KOF  INFINEON TECHNOLOGIES TT215N20KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 215A; BG-PB50-1; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IRFR812TRPBF INFINEON TECHNOLOGIES irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
товар відсутній
IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
2+357.28 грн
3+ 288.2 грн
9+ 272.23 грн
Мінімальне замовлення: 2
IRF6646TRPBF irf6646pbf.pdf
IRF6646TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
товар відсутній
IRF6655TRPBF irf6655pbf.pdf
IRF6655TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
товар відсутній
IRF7606TRPBF irf7606pbf.pdf
IRF7606TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: Micro8
Drain-source voltage: -30V
Drain current: -3.6A
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
товар відсутній
IRF6712STRPBF irf6712spbf.pdf
IRF6712STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
товар відсутній
IRF6714MTRPBF irf6714mpbf.pdf
IRF6714MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET
Mounting: SMD
Kind of package: reel
Drain-source voltage: 25V
Drain current: 166A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
товар відсутній
IPP019N08NF2SAKMA1 IPP019N08NF2S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Type of transistor: N-MOSFET
Technology: StrongIRFET™ 2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 147A
Pulsed drain current: 764A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 124nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP020N08N5AKSA1 IPP020N08N5-DTE.pdf
IPP020N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+533.18 грн
3+ 342.65 грн
7+ 323.77 грн
IPP023NE7N3GXKSA1 IPP023NE7N3G-DTE.pdf
IPP023NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP027N08N5AKSA1 IPP027N08N5-DTE.pdf
IPP027N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP029N06NAKSA1 IPP029N06NAKSA1-DTE.pdf
IPP029N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP034N08N5AKSA1 IPP034N08N5-DTE.pdf
IPP034N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+211.08 грн
3+ 172.78 грн
6+ 150.27 грн
16+ 142.29 грн
50+ 141.56 грн
Мінімальне замовлення: 2
IPP037N06L3GXKSA1 IPP037N06L3G-DTE.pdf
IPP037N06L3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP039N04LGXKSA1 IPP039N04LG-DTE.pdf
IPP039N04LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Case: PG-TO220-3
Power dissipation: 94W
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+79.74 грн
10+ 58.08 грн
18+ 47.91 грн
Мінімальне замовлення: 5
IPP041N04NGXKSA1 IPP041N04NG-DTE.pdf
IPP041N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP041N12N3GXKSA1 IPP041N12N3G-DTE.pdf
IPP041N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Power dissipation: 300W
товар відсутній
IPP042N03LGXKSA1 IPP042N03LG-DTE.pdf
IPP042N03LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+81.31 грн
6+ 67.51 грн
17+ 51.54 грн
45+ 48.64 грн
Мінімальне замовлення: 5
IPP048N04NGXKSA1 IPP048N04NG-DTE.pdf
IPP048N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+265.81 грн
Мінімальне замовлення: 2
IPP04CN10NGXKSA1 IPP04CN10NG.pdf
IPP04CN10NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP052N08N5AKSA1 IPP052N08N5-DTE.pdf
IPP052N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP05CN10NGXKSA1 Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPP062NE7N3GXKSA1 IPP062NE7N3G-dte.pdf
IPP062NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 2153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+97.72 грн
5+ 82.76 грн
14+ 65.34 грн
37+ 61.71 грн
500+ 58.8 грн
Мінімальне замовлення: 4
IPD25CN10NGATMA1 Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD78CN10NGATMA1 IPD78CN10NG-DTE.pdf
IPD78CN10NGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPP120N20NFDAKSA1 IPP120N20NFD-DTE.pdf
IPP120N20NFDAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товар відсутній
IPD70R600P7SAUMA1 IPD70R600P7S.pdf
IPD70R600P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
на замовлення 2433 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+83.65 грн
6+ 70.42 грн
16+ 53.72 грн
43+ 50.82 грн
Мінімальне замовлення: 5
IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ50N120CT2XKSA1 IKQ50N120CT2.pdf
IKQ50N120CT2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 151W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™ 2
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
IKY50N120CH3XKSA1 IKY50N120CH3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 60ns
Turn-off time: 325ns
Type of transistor: IGBT
Power dissipation: 173W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™
Kind of package: tube
Mounting: THT
Case: TO247PLUS-4
товар відсутній
IRLS3813TRLPBF IRLS3813TRLPBF.pdf
IRLS3813TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BTF3035EJXUMA1 BTF3035EJ.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 32mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1.75W
Turn-on time: 1.35µs
Turn-off time: 2µs
товар відсутній
BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товар відсутній
BTS3035TF BTS3035TF.pdf
BTS3035TF
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
на замовлення 1330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+94.37 грн
10+ 88.57 грн
15+ 58.8 грн
40+ 55.17 грн
1000+ 52.99 грн
Мінімальне замовлення: 4
IAUA200N04S5N010AUMA1 IAUA200N04S5N010.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
IRFR8314TRPBF IRFR8314TRPBF.pdf
IRFR8314TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Kind of package: reel
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+52.99 грн
19+ 46.46 грн
51+ 43.56 грн
Мінімальне замовлення: 7
IPA80R900P7XKSA1 IPA80R900P7.pdf
IPA80R900P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPD80R900P7ATMA1 IPD80R900P7.pdf
IPD80R900P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+57.85 грн
8+ 47.19 грн
22+ 38.91 грн
Мінімальне замовлення: 7
IPU80R900P7AKMA1 IPU80R900P7.pdf
IPU80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 344 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+60.98 грн
8+ 50.82 грн
22+ 39.2 грн
60+ 37.02 грн
Мінімальне замовлення: 7
BSC030N08NS5ATMA1 BSC030N08NS5-DTE.pdf
BSC030N08NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 139W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IPB030N08N3GATMA1 IPB030N08N3G-DTE.pdf
IPB030N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD30N10S3L34ATMA1 Infineon-IPD30N10S3L_34-DS-v01_01-en.pdf?fileId=db3a30431a5c32f2011a908963135956&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 120A; 45.5W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 45.5W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
BSC030N03LSGATMA1 BSC030N03LSG-DTE.pdf
BSC030N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 98A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
BSC030N03MSGATMA1 BSC030N03MSG-DTE.pdf
BSC030N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
товар відсутній
BSC039N06NS BSC039N06NS-DTE.pdf
BSC039N06NS
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Technology: OptiMOS™
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
товар відсутній
FF500R17KE4BOSA1 FF500R17KE4.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 500A
Pulsed collector current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
товар відсутній
ETD480N22P60HPSA1 ETD480N22P60_ETT480N22P60.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 480A; BG-PB60ECO-1; Ufmax: 1.83V
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Max. load current: 700A
Type of module: diode-thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
товар відсутній
ICL8800XUMA1 ICL88xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товар відсутній
TT215N20KOF  TT215N20KOF.pdf
TT215N20KOF 
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 215A; BG-PB50-1; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IRFR812TRPBF irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
товар відсутній
IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+357.28 грн
3+ 288.2 грн
9+ 272.23 грн
Мінімальне замовлення: 2
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