Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136423) > Сторінка 2263 з 2274
| Фото | Назва | Виробник | Інформація |
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| FS50R12KT4B11BOSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO2-6 Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 280W Technology: EconoPACK™ 2 Mechanical mounting: screw |
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| FS50R12KT4B15BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO2-6 Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 280W Technology: EconoPACK™ 2 Mechanical mounting: screw |
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| FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 750W |
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| FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO3-4 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor |
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FP25R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Application: frequency changer; Inverter Case: AG-ECONO2-5 Pulsed collector current: 50A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 155W Technology: EconoPIM™ 2 Mechanical mounting: screw |
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| FP35R12KT4B15BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Application: frequency changer; Inverter Case: AG-ECONO2-4 Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 35A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 210W Mechanical mounting: screw |
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TT210N12KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB50-1 Max. off-state voltage: 1.2kV Max. forward voltage: 1.65V Load current: 210A Semiconductor structure: double series Gate current: 150mA Max. forward impulse current: 6.6kA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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TT215N18KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 215A; BG-PB50-1; Ifsm: 7kA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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TT215N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV |
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1EDC40I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A Type of integrated circuit: driver Supply voltage: 3.1...17V; 13...35V Mounting: SMD Case: PG-DSO-8 Integrated circuit features: galvanically isolated Kind of package: reel; tape Number of channels: 1 Output current: -4...4A Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 600/650/1200V |
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IDP15E65D1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode |
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IDP15E65D2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2 Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode |
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BSC500N20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Kind of channel: enhanced |
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XMC1401F064F0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1401F064F0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1401Q048F0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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IPP65R190C7FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
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BA885E6327 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.19...0.45pF |
на замовлення 1763 шт: термін постачання 21-30 дні (днів) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SC79 Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 120ns Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF |
на замовлення 5334 шт: термін постачання 21-30 дні (днів) |
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IRF7842TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 3908 шт: термін постачання 21-30 дні (днів) |
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| IRFR48ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 44A Pulsed drain current: 250A Power dissipation: 91W Case: DPAK Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhanced |
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BFS481H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT363 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
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| ETT480N22P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 480A; BG-PB60ECO-1; screw Case: BG-PB60ECO-1 Gate current: 250mA Max. forward voltage: 1.83V Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Load current: 480A Type of module: thyristor Semiconductor structure: double series Max. forward impulse current: 14.7kA |
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XMC4104F64F64ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 64kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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XMC4104F64F128ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 128kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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PVI5033RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 2.5ms Turn-off time: 5ms Manufacturer series: PVI5033RPbF |
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ISO1H811GAUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC Type of integrated circuit: driver Kind of integrated circuit: high-side Technology: ISOFACE™ Case: PG-DSO-36 Output current: 0.625A Number of channels: 8 Supply voltage: 11...35V DC Integrated circuit features: 8bit interface; galvanically isolated Mounting: SMD On-state resistance: 0.15Ω Operating temperature: -25...125°C Kind of package: reel; tape Kind of output: N-Channel Turn-on time: 64µs Turn-off time: 89µs Power dissipation: 3.3W |
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| T1590N28TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Mounting: Press-Pack Case: BG-T10026K-1 Max. off-state voltage: 2.8kV Max. load current: 3.2kA Load current: 1.59kA Gate current: 300mA Max. forward impulse current: 32kA |
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IPD30N03S4L09ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W Polarisation: unipolar Power dissipation: 42W Type of transistor: N-MOSFET On-state resistance: 9mΩ Drain current: 30A Gate charge: 15nC Drain-source voltage: 30V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Case: PG-TO252-3 Mounting: SMD |
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| AIDW16S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 94W Technology: CoolSiC™ 5G; SiC Application: automotive industry Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 95A |
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IDH16G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; 250W; PG-TO220-2 Case: PG-TO220-2 Mounting: THT Kind of package: tube Max. forward voltage: 1.65V Power dissipation: 250W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 1.2kV Load current: 16A Semiconductor structure: single diode Leakage current: 5.5µA Type of diode: Schottky rectifying Max. forward impulse current: 120A |
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IPP60R160C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R160P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23.8A Power dissipation: 176W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R165CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 192W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IDW16G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Power dissipation: 94W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Leakage current: 3.2µA Type of diode: Schottky rectifying Max. forward impulse current: 74A |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IDH16G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2 Case: PG-TO220-2 Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Power dissipation: 129W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 16A Semiconductor structure: single diode Leakage current: 3.2µA Type of diode: Schottky rectifying Max. forward impulse current: 105A |
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IPP60R180C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R180C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 68W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IPW60R037CSFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 245W Case: TO247-3 On-state resistance: 37mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced |
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IPP60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3 Mounting: THT On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO220-3 Drain-source voltage: 600V Drain current: 50A |
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IPW60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3 Mounting: THT On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO247-3 Drain-source voltage: 600V Drain current: 50A |
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IPP80R280P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.6A Power dissipation: 101W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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TD104N14KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 104A; BG-PB60-1; Ufmax: 1.62V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 104A Max. load current: 160A Case: BG-PB60-1 Max. forward voltage: 1.62V Max. forward impulse current: 2.05kA Gate current: 120mA Electrical mounting: screw Mechanical mounting: screw |
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TD92N16KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 92A Max. load current: 160A Case: BG-PB20-1 Max. forward voltage: 1.62V Max. forward impulse current: 2.05kA Gate current: 120mA Electrical mounting: screw Mechanical mounting: screw |
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TT104N12KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw Case: BG-PB20-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.2kV Max. forward voltage: 1.62V Load current: 104A Semiconductor structure: double series Gate current: 120mA Max. forward impulse current: 2.05kA |
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TT104N12KOFKHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw Case: BG-PB20-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.2kV Max. forward voltage: 1.62V Load current: 104A Semiconductor structure: double series Gate current: 120mA Max. forward impulse current: 2.05kA |
товар відсутній |
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TT104N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw Case: BG-PB20-1 Max. forward voltage: 1.62V Load current: 104A Semiconductor structure: double series Gate current: 120mA Max. forward impulse current: 2.05kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.4kV |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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TT92N12KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 92A; BG-PB20-1; Igt: 120mA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 92A Case: BG-PB20-1 Max. forward voltage: 1.62V Max. forward impulse current: 2.05kA Gate current: 120mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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TT92N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 92A; BG-PB20-1; Igt: 120mA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 92A Case: BG-PB20-1 Max. forward voltage: 1.62V Max. forward impulse current: 2.05kA Gate current: 120mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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BCR401RE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT143R Output current: 60mA Number of channels: 1 Mounting: SMD Operating voltage: 1.2...18V |
на замовлення 2674 шт: термін постачання 21-30 дні (днів) |
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| BCR401UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 60mA Number of channels: 1 Mounting: SMD Operating voltage: 1.4...40V |
товар відсутній |
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| BCR402RE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT143R Output current: 20...60mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.2...18V |
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| BCR402UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 20...65mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
товар відсутній |
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| BCR405UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT143R Output current: 50...65mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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| BCR420UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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| BCR421UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 1.4...40V |
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| BCR431UXTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: PG-SOT23-6 Output current: 20...100mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...42V |
товар відсутній |
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BCR450E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.07...2.5A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 8...27V |
на замовлення 2962 шт: термін постачання 21-30 дні (днів) |
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| BCR48PNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 70mA Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 100MHz Base resistor: 47/2.2kΩ Base-emitter resistor: 47/47kΩ |
товар відсутній |
| FS50R12KT4B11BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній
| FS50R12KT4B15BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній
| FS150R12KT4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 750W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 750W
товар відсутній
| FS200R12KT4RB11BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO3-4
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
товар відсутній
| FP25R12KT3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Application: frequency changer; Inverter
Case: AG-ECONO2-5
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 155W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Application: frequency changer; Inverter
Case: AG-ECONO2-5
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 155W
Technology: EconoPIM™ 2
Mechanical mounting: screw
товар відсутній
| FP35R12KT4B15BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Application: frequency changer; Inverter
Case: AG-ECONO2-4
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 210W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Application: frequency changer; Inverter
Case: AG-ECONO2-4
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 210W
Mechanical mounting: screw
товар відсутній
| TT210N12KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 6.6kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 150mA
Max. forward impulse current: 6.6kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9186.07 грн |
| TT215N18KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT215N22KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
товар відсутній
| 1EDC40I12AHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -4...4A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Supply voltage: 3.1...17V; 13...35V
Mounting: SMD
Case: PG-DSO-8
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Number of channels: 1
Output current: -4...4A
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
товар відсутній
| IDP15E65D1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
товар відсутній
| IDP15E65D2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
товар відсутній
| BSC500N20NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| XMC1401F064F0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1401F064F0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1401Q048F0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| IPP65R190C7FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB65R190C7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BA885E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
на замовлення 1763 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.85 грн |
| 61+ | 5.95 грн |
| 100+ | 5.3 грн |
| 500+ | 5.15 грн |
| BA89202VH6127XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 120ns
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 120ns
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
на замовлення 5334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.32 грн |
| 85+ | 4.33 грн |
| 100+ | 3.81 грн |
| 255+ | 3.31 грн |
| 705+ | 3.13 грн |
| IRF7842TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 3908 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 7+ | 56.62 грн |
| 10+ | 50.09 грн |
| 19+ | 44.28 грн |
| 52+ | 42.11 грн |
| IRFR48ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 44A; Idm: 250A; 91W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 44A
Pulsed drain current: 250A
Power dissipation: 91W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BFS481H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
товар відсутній
| ETT480N22P60HPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 480A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Type of module: thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 480A; BG-PB60ECO-1; screw
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Type of module: thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
товар відсутній
| XMC4104F64F64ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 64kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| XMC4104F64F128ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| PVI5033RSPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
товар відсутній
| ISO1H811GAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
товар відсутній
| T1590N28TOFVTXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
товар відсутній
| IPD30N03S4L09ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
| AIDW16S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 95A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 95A
товар відсутній
| IDH16G120C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; 250W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Power dissipation: 250W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Load current: 16A
Semiconductor structure: single diode
Leakage current: 5.5µA
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; 250W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Power dissipation: 250W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Load current: 16A
Semiconductor structure: single diode
Leakage current: 5.5µA
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
товар відсутній
| IPP60R160C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R160P6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R165CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IDW16G65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 74A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 74A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 526.93 грн |
| 3+ | 326.68 грн |
| 7+ | 308.53 грн |
| IDH16G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 129W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 105A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 129W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 105A
товар відсутній
| IPP60R180C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPW60R180C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPW60R037CSFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R040C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 50A
товар відсутній
| IPW60R040C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Mounting: THT
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 50A
товар відсутній
| IPP80R280P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| TD104N14KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 104A; BG-PB60-1; Ufmax: 1.62V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 104A
Max. load current: 160A
Case: BG-PB60-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 104A; BG-PB60-1; Ufmax: 1.62V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 104A
Max. load current: 160A
Case: BG-PB60-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| TD92N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| TT104N12KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
товар відсутній
| TT104N12KOFKHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
товар відсутній
| TT104N14KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11222.65 грн |
| TT92N12KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 92A; BG-PB20-1; Igt: 120mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 92A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 92A; BG-PB20-1; Igt: 120mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 92A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT92N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 92A; BG-PB20-1; Igt: 120mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 92A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 92A; BG-PB20-1; Igt: 120mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 92A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9308.03 грн |
| BCR401RE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.2...18V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.2...18V
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 19.7 грн |
| 25+ | 15.97 грн |
| 67+ | 12.6 грн |
| 184+ | 11.91 грн |
| 500+ | 11.76 грн |
| BCR401UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.4...40V
товар відсутній
| BCR402RE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 20...60mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.2...18V
товар відсутній
| BCR402UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
товар відсутній
| BCR405UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 50...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 50...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
товар відсутній
| BCR420UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
товар відсутній
| BCR421UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V
товар відсутній
| BCR431UXTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
товар відсутній
| BCR450E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.07...2.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...27V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.07...2.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...27V
на замовлення 2962 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 54.73 грн |
| 10+ | 39.93 грн |
| 25+ | 35.86 грн |
| 31+ | 27.66 грн |
| 85+ | 26.13 грн |
| BCR48PNH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 70mA
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47/2.2kΩ
Base-emitter resistor: 47/47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 70mA
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 70mA
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 100MHz
Base resistor: 47/2.2kΩ
Base-emitter resistor: 47/47kΩ
товар відсутній