Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136437) > Сторінка 2259 з 2274
| Фото | Назва | Виробник | Інформація |
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| F4150R12KS4BOSA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 300A Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: EconoPACK™ 3 Topology: IGBT half-bridge x2; NTC thermistor Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 960W |
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| DDB6U145N16LHOSA1 | INFINEON TECHNOLOGIES |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 145A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 145A Max. forward impulse current: 1kA Electrical mounting: screw Version: module Max. forward voltage: 1.43V Leads: M5 screws Case: AG-ISOPACK |
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AUIRF3805 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 210A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 210A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
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AUIRF3805L-7P | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 240A Power dissipation: 300W Case: TO263CA-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Gate charge: 130nC Kind of channel: enhanced |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AUIRF4104STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel Kind of channel: enhanced |
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AUIRFR3504Z | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced |
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| STT800N16P55XPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V Max. forward voltage: 1.56V Load current: 800A Semiconductor structure: opposing Gate current: 200mA Max. forward impulse current: 5.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: BG-PS55-1 Max. off-state voltage: 1.6kV |
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IRF7493TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| T390N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 600A Load current: 381A Gate current: 150mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 4.9kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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| T420N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 750A Load current: 424A Gate current: 200mA Max. forward impulse current: 7.2kA |
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| T590N14TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA Max. off-state voltage: 1.4kV Load current: 590A Case: BG-T5726K-1 Max. forward impulse current: 9.4kA Gate current: 250mA Mounting: Press-Pack Max. load current: 1.25kA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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| T590N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.25kA; 590A; Igt: 250mA Kind of package: in-tray Max. forward impulse current: 9.4kA Gate current: 250mA Features of semiconductor devices: phase controlled thyristor (PCT) Max. off-state voltage: 1.6kV Load current: 590A Max. load current: 1.25kA Case: BG-T5726K-1 Type of thyristor: hockey-puck Mounting: Press-Pack |
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| T590N18TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA Max. off-state voltage: 1.8kV Load current: 590A Case: BG-T5726K-1 Max. forward impulse current: 9.4kA Gate current: 250mA Mounting: Press-Pack Max. load current: 1.25kA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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IRLMS5703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRS2168DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V Supply voltage: 11.5...16.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Turn-on time: 0.12µs Turn-off time: 50ns Output current: -260...180mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD Case: SO16 Power: 1.4W |
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BCR521E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Collector-emitter voltage: 50V Frequency: 100MHz Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Type of transistor: NPN Case: SOT23 Collector current: 0.5A |
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BGS13S4N9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz Type of integrated circuit: RF switch Case: TSNP9 Mounting: SMD Number of channels: 3 Application: telecommunication Supply voltage: 1.8...3.3V DC Output configuration: SP3T Bandwidth: 0.1...3GHz |
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BGSX22G2A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Case: ATSLP-10-2 Mounting: SMD Number of channels: 2 Application: telecommunication Supply voltage: 1.65...3.4V DC Output configuration: DPDT Bandwidth: 0.1...6GHz |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| BGSX22G5A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Case: ATSLP-10-5 Mounting: SMD Number of channels: 2 Application: telecommunication Supply voltage: 1.65...3.4V DC Output configuration: DPDT Bandwidth: 0.1...6GHz |
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| IPD60R1K5PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Case: TO252 Mounting: SMD On-state resistance: 2.892Ω Gate-source voltage: ±20V Pulsed drain current: 6A Power dissipation: 22W Polarisation: unipolar Technology: CoolMOS™ PFD7 Features of semiconductor devices: ESD protected gate Drain current: 2.2A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET |
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| IPDD60R150G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 95W Type of transistor: N-MOSFET On-state resistance: 0.15Ω Drain current: 16A Gate charge: 23nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 45A Mounting: SMD |
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IFX1051LEXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC; PG-TSON-8; -40÷125°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC Case: PG-TSON-8 Interface: CAN Mounting: SMD Operating temperature: -40...125°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
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IPP030N10N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| 1EDI2010ASXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI Technology: EiceDRIVER™ Case: PG-DSO-36 Mounting: SMD Kind of package: reel; tape Output current: -1...1A Topology: single transistor Voltage class: 1.2kV Supply voltage: 4.65...5.5V; 13...18V Type of integrated circuit: driver Interface: SPI Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI20I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI20I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; IGBT gate driver Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Output current: -2...2A Type of integrated circuit: driver Number of channels: 1 |
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1EDI20N12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8 Technology: EiceDRIVER™; GaN Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Integrated circuit features: galvanically isolated Number of channels: 1 Kind of integrated circuit: gate driver; high-side Supply voltage: 3.1...17V; 13...35V Voltage class: 1.2kV Type of integrated circuit: driver |
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| IRFR4510TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 252A Power dissipation: 143W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Kind of channel: enhanced |
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BAT6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common cathode; double Case: SOT323 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Pulsed drain current: 1kA Power dissipation: 380W Case: D2PAK-7 Gate-source voltage: ±16V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| ILD8150EXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED controller Case: PG-DSO-8 Output current: 1.5A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 8...80V |
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BSC0501NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0503NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Technology: OptiMOS™ 5 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 1.9mΩ Power dissipation: 50W Drain current: 100A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 4614 шт: термін постачання 21-30 дні (днів) |
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BSC0904NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 37W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPD60R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 19A Power dissipation: 82W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Gate charge: 20.5nC Kind of channel: enhanced |
на замовлення 2206 шт: термін постачання 21-30 дні (днів) |
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRF7831TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IFX21401MBHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD Mounting: SMD Operating temperature: -40...125°C Case: PG-SCT595 Input voltage: 4...40V Kind of package: reel; tape Kind of voltage regulator: adjustable; LDO Output current: 50mA Voltage drop: 0.3V Type of integrated circuit: voltage regulator |
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IRF4104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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IRF4104SPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhanced |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Kind of package: reel Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: PQFN2X2 |
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IRL1004PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Type of transistor: N-MOSFET Power dissipation: 200W Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Case: TO220AB |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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IRL60HS118 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET On-state resistance: 17mΩ Power dissipation: 5.8W Polarisation: unipolar Drain current: 13A Drain-source voltage: 60V Case: PQFN2X2 Gate charge: 5.3nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V |
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IPA80R1K0CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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IPA80R1K4P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 8.9A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IMW120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 13A On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Case: TO247 |
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| IMW120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Drain-source voltage: 1.2kV Drain current: 4.7A On-state resistance: 662mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Case: TO247 |
товар відсутній |
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| IMZ120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W Mounting: THT Drain-source voltage: 1.2kV Drain current: 13A On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Case: TO247-4 |
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| IMZ120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Drain-source voltage: 1.2kV Drain current: 4.7A On-state resistance: 662mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Case: TO247-4 |
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
на замовлення 496 шт: термін постачання 21-30 дні (днів) |
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| 1ED020I12B2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товар відсутній |
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| 1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-20 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товар відсутній |
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| 1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товар відсутній |
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2EDL05I06BFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
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| 2EDL05I06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
товар відсутній |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Gate charge: 36nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Kind of package: reel; tape Polarisation: unipolar Power dissipation: 200W Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Drain current: 200A Drain-source voltage: 80V Case: PG-HSOF-8 Mounting: SMD |
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BFP640H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.1V Collector current: 50mA Power dissipation: 0.2W Case: SOT343 Current gain: 110...270 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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| F4150R12KS4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 960W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; 960W
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 300A
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 3
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 960W
товар відсутній
| DDB6U145N16LHOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 145A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 145A
Max. forward impulse current: 1kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.43V
Leads: M5 screws
Case: AG-ISOPACK
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 145A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 145A
Max. forward impulse current: 1kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.43V
Leads: M5 screws
Case: AG-ISOPACK
товар відсутній
| AUIRF3805 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| AUIRF3805L-7P |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: TO263CA-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 130nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: TO263CA-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 130nC
Kind of channel: enhanced
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.12 грн |
| AUIRF4104STRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRFR3504Z |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
товар відсутній
| STT800N16P55XPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
товар відсутній
| IRF7493TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 9.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| T390N16TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
| T420N16TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
товар відсутній
| T590N14TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
| T590N16TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Gate current: 250mA
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. off-state voltage: 1.6kV
Load current: 590A
Max. load current: 1.25kA
Case: BG-T5726K-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Gate current: 250mA
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. off-state voltage: 1.6kV
Load current: 590A
Max. load current: 1.25kA
Case: BG-T5726K-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
товар відсутній
| T590N18TOFXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
| IRLMS5703TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRS2168DSTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Supply voltage: 11.5...16.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO16
Power: 1.4W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Supply voltage: 11.5...16.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO16
Power: 1.4W
товар відсутній
| BCR521E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Type of transistor: NPN
Case: SOT23
Collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Type of transistor: NPN
Case: SOT23
Collector current: 0.5A
товар відсутній
| BGS13S4N9E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Case: TSNP9
Mounting: SMD
Number of channels: 3
Application: telecommunication
Supply voltage: 1.8...3.3V DC
Output configuration: SP3T
Bandwidth: 0.1...3GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; SP3T; Ch: 3; TSNP9; 1.8÷3.3VDC; 0.1÷3GHz
Type of integrated circuit: RF switch
Case: TSNP9
Mounting: SMD
Number of channels: 3
Application: telecommunication
Supply voltage: 1.8...3.3V DC
Output configuration: SP3T
Bandwidth: 0.1...3GHz
товар відсутній
| BGSX22G2A10E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-2
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-2
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 7+ | 54.45 грн |
| 18+ | 50.09 грн |
| 25+ | 48.64 грн |
| 48+ | 47.19 грн |
| BGSX22G5A10E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-5
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Case: ATSLP-10-5
Mounting: SMD
Number of channels: 2
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: DPDT
Bandwidth: 0.1...6GHz
товар відсутній
| IPD60R1K5PFD7SAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
товар відсутній
| IPDD60R150G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 95W
Type of transistor: N-MOSFET
On-state resistance: 0.15Ω
Drain current: 16A
Gate charge: 23nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 45A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 16A; Idm: 45A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 95W
Type of transistor: N-MOSFET
On-state resistance: 0.15Ω
Drain current: 16A
Gate charge: 23nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 45A
Mounting: SMD
товар відсутній
| IFX1051LEXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-TSON-8; -40÷125°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-TSON-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-TSON-8; -40÷125°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-TSON-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
товар відсутній
| IPP030N10N5AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 1EDI2010ASXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Technology: EiceDRIVER™
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Output current: -1...1A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 4.65...5.5V; 13...18V
Type of integrated circuit: driver
Interface: SPI
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Technology: EiceDRIVER™
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Output current: -1...1A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 4.65...5.5V; 13...18V
Type of integrated circuit: driver
Interface: SPI
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
товар відсутній
| 1EDI20I12AFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
товар відсутній
| 1EDI20I12MFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 1
товар відсутній
| 1EDI20N12AFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Type of integrated circuit: driver
товар відсутній
| IRFR4510TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 252A
Power dissipation: 143W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 252A
Power dissipation: 143W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BAT6405WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.42 грн |
| 32+ | 11.69 грн |
| 50+ | 8.35 грн |
| 100+ | 7.26 грн |
| 190+ | 4.5 грн |
| 520+ | 4.28 грн |
| IRLS3036TRL7PP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 641 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.88 грн |
| 5+ | 198.18 грн |
| 6+ | 154.63 грн |
| 15+ | 145.92 грн |
| IRLS3036TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| ILD8150EXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
товар відсутній
| BSC0501NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0503NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| BSC0902NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 4614 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.83 грн |
| 23+ | 38.4 грн |
| 61+ | 36.3 грн |
| 1000+ | 35.86 грн |
| BSC0904NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ0902NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD60R650CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 19A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 19A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
на замовлення 2206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.85 грн |
| 8+ | 48.2 грн |
| 22+ | 40.65 грн |
| 58+ | 38.48 грн |
| 500+ | 37.24 грн |
| IRG4PSH71KDPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRF7831TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IFX21401MBHTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: PG-SCT595
Input voltage: 4...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO
Output current: 50mA
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: PG-SCT595
Input voltage: 4...40V
Kind of package: reel; tape
Kind of voltage regulator: adjustable; LDO
Output current: 50mA
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
товар відсутній
| IRF4104PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98 грн |
| 10+ | 87.11 грн |
| 12+ | 74.77 грн |
| 32+ | 71.14 грн |
| IRF4104SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhanced
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.74 грн |
| 10+ | 80.58 грн |
| 13+ | 69.69 грн |
| 34+ | 66.06 грн |
| IRLHS6276TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
товар відсутній
| IRL1004PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Type of transistor: N-MOSFET
Power dissipation: 200W
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: TO220AB
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 194.67 грн |
| 9+ | 103.09 грн |
| 23+ | 97.28 грн |
| IRL60HS118 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Power dissipation: 5.8W
Polarisation: unipolar
Drain current: 13A
Drain-source voltage: 60V
Case: PQFN2X2
Gate charge: 5.3nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Power dissipation: 5.8W
Polarisation: unipolar
Drain current: 13A
Drain-source voltage: 60V
Case: PQFN2X2
Gate charge: 5.3nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPA80R1K0CEXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.83 грн |
| 10+ | 84.94 грн |
| 13+ | 69.69 грн |
| 34+ | 66.06 грн |
| IPA80R1K4P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IMW120R140M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
товар відсутній
| IMW120R350M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247
товар відсутній
| IMZ120R140M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247-4
товар відсутній
| IMZ120R350M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
товар відсутній
| 1ED020I12F2XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
на замовлення 496 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 339.3 грн |
| 4+ | 241.74 грн |
| 10+ | 228.67 грн |
| 1ED020I12B2XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товар відсутній
| 1ED020I12FA2XUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товар відсутній
| 1ED020I12FXUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товар відсутній
| 2EDL05I06BFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| 2EDL05I06PJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| IAUT200N08S5N023ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
товар відсутній
| BFP640H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 32.84 грн |
| 16+ | 23.3 грн |
| 50+ | 20.04 грн |
| 57+ | 14.97 грн |
| 155+ | 14.15 грн |