Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136408) > Сторінка 2270 з 2274
| Фото | Назва | Виробник | Інформація |
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| IPD60R385CPATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced |
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| IPD60R3K3C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.1A Pulsed drain current: 4A Power dissipation: 18.1W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Kind of channel: enhanced |
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TD61N16KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 61A; BG-PB20-1; Ufmax: 1.9V; screw Max. off-state voltage: 1.6kV Max. load current: 120A Max. forward voltage: 1.9V Load current: 61A Semiconductor structure: double series Gate current: 120mA Max. forward impulse current: 1.55kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB20-1 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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DD261N22K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 261A; BG-PB50-1; screw Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. forward voltage: 1.42V Load current: 261A Semiconductor structure: double series Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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IPP60R299CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 96W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BSZ034N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 26W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0923NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0924NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0925NDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 30W; PG-TISON-8 Mounting: SMD Case: PG-TISON-8 Technology: OptiMOS™ Drain-source voltage: 30V Drain current: 40A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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BSZ035N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ |
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BSZ035N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TSDSON-8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.5mΩ |
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BSZ058N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ0902NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced |
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| BSZ0506NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 27W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhanced |
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IRF6215STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRGDC0250 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 81A; 217W; SUPER220 Type of transistor: IGBT Technology: Planar Collector-emitter voltage: 1.2kV Collector current: 81A Power dissipation: 217W Case: SUPER220 Gate-emitter voltage: ±20V Pulsed collector current: 99A Mounting: THT Gate charge: 227nC Kind of package: tube Turn-on time: 1678ns Turn-off time: 3151ns |
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IGA03N120H2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8.2A; 29W; TO220FP Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 8.2A Power dissipation: 29W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 9A Mounting: THT Gate charge: 8.6nC Kind of package: tube Turn-on time: 16.1ns Turn-off time: 403ns |
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IGB03N120H2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3.9A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 9.9A Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 16.1ns Turn-off time: 403ns |
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BSC037N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Power dissipation: 114W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET |
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FP15R12W1T4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 15A Case: AG-EASY1B-1 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 130W Technology: EasyPIM™ 1B Mechanical mounting: screw |
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IRFH8324TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 23A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH8325TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6 Case: PQFN5X6 Mounting: SMD Kind of package: reel Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Power dissipation: 3.6W |
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| IR38165MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Kind of package: reel; tape Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; SVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Operating temperature: -40...125°C Case: PQFN5X7 DC supply current: 50mA Supply voltage: 4.5...5.5V |
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BSC093N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 4473 шт: термін постачання 21-30 дні (днів) |
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BSC034N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 57W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET |
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BSC042N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8 Drain-source voltage: 30V Drain current: 75A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
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BSC047N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8 Drain-source voltage: 80V Drain current: 100A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
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BSC050N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 71A Power dissipation: 57W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced |
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BSC057N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8 Drain-source voltage: 30V Drain current: 58A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
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BSC057N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8 Drain-source voltage: 30V Drain current: 71A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD Case: PG-TDSON-8 |
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BSC059N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Kind of channel: enhanced |
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IAUT240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.9mΩ Drain current: 240A Gate charge: 42nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 230W Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET |
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BSC028N06LS3G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
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SGW50N60HS | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 416W Case: TO247-3 Mounting: THT Kind of package: tube |
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IRFR4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR7546TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 71A Power dissipation: 99W Case: DPAK On-state resistance: 7.9mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 1744 шт: термін постачання 21-30 дні (днів) |
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A Power dissipation: 81.1W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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| FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 465W Mechanical mounting: screw |
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BSP603S2L | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223 Mounting: SMD Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 5.2A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Case: SOT223 Polarisation: unipolar |
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IM231L6T2BAKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™ Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Output current: 6A Case: DIP 29x12 (PG-DIP-23) Mounting: THT Frequency: 20kHz Topology: IGBT three-phase bridge Operating temperature: -40...125°C Kind of package: tube Integrated circuit features: integrated bootstrap functionality Protection: undervoltage UVP Technology: ClPOS™ Micro; TRENCHSTOP™ Voltage class: 600V Power dissipation: 10.5W Operating voltage: 13.5...16.5/0...450V |
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz |
на замовлення 12511 шт: термін постачання 21-30 дні (днів) |
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IPI60R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
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IPI65R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
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IPP60R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF3708PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 62A Power dissipation: 87W Case: TO220AB Gate-source voltage: ±12V On-state resistance: 12mΩ Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
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IPP200N25N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced |
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IRFHM8326TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 19A Drain-source voltage: 30V Technology: HEXFET® Kind of channel: enhanced |
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IRFHM6342TR2PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Power dissipation: 2.1W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 8.5A Drain-source voltage: 30V Features of semiconductor devices: logic level Gate charge: 11nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 15.5mΩ |
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BSP296L6327 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of channel: enhanced |
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| IR11672ASTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC Kind of integrated circuit: gate driver Case: SO8 Output current: -7...2A Power: 625mW Supply voltage: 11.4...18V DC Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Voltage class: 200V |
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| BFR740L3RHE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4V Collector current: 40mA Power dissipation: 0.16W Case: TSLP-3-9 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
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BFP405E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 12mA Power dissipation: 75mW Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 25GHz |
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BSP75N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.5Ω Technology: HITFET® Power dissipation: 1.8W |
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BSC040N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8 Power dissipation: 104W Polarisation: unipolar Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 80V Drain current: 100A On-state resistance: 4mΩ Type of transistor: N-MOSFET |
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BSC052N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Drain current: 95A Drain-source voltage: 80V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar |
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BSC061N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 74W On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Drain current: 82A Drain-source voltage: 80V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar |
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BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhanced |
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TD122N22KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Max. off-state voltage: 2.2kV Load current: 122A Max. load current: 220A Semiconductor structure: double series Case: BG-PB34-1 Max. forward impulse current: 3.3kA Max. forward voltage: 1.95V Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor |
товар відсутній |
| IPD60R385CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD60R3K3C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TD61N16KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 61A; BG-PB20-1; Ufmax: 1.9V; screw
Max. off-state voltage: 1.6kV
Max. load current: 120A
Max. forward voltage: 1.9V
Load current: 61A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 1.55kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB20-1
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 61A; BG-PB20-1; Ufmax: 1.9V; screw
Max. off-state voltage: 1.6kV
Max. load current: 120A
Max. forward voltage: 1.9V
Load current: 61A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 1.55kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB20-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7012.69 грн |
| DD261N22K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 261A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 261A; BG-PB50-1; screw
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.42V
Load current: 261A
Semiconductor structure: double series
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| IPP60R299CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSZ034N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BSZ065N03LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 26W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0923NDIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0924NDIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0925NDATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 30W; PG-TISON-8
Mounting: SMD
Case: PG-TISON-8
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 30W; PG-TISON-8
Mounting: SMD
Case: PG-TISON-8
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BSZ035N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
товар відсутній
| BSZ035N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TSDSON-8
Drain-source voltage: 30V
Drain current: 40A
On-state resistance: 3.5mΩ
товар відсутній
| BSZ058N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ0902NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ0506NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 27W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF6215STRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRGDC0250 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 81A; 217W; SUPER220
Type of transistor: IGBT
Technology: Planar
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: SUPER220
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Turn-on time: 1678ns
Turn-off time: 3151ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 81A; 217W; SUPER220
Type of transistor: IGBT
Technology: Planar
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: SUPER220
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Turn-on time: 1678ns
Turn-off time: 3151ns
товар відсутній
| IGA03N120H2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8.2A; 29W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8.2A
Power dissipation: 29W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Mounting: THT
Gate charge: 8.6nC
Kind of package: tube
Turn-on time: 16.1ns
Turn-off time: 403ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8.2A; 29W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 8.2A
Power dissipation: 29W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 9A
Mounting: THT
Gate charge: 8.6nC
Kind of package: tube
Turn-on time: 16.1ns
Turn-off time: 403ns
товар відсутній
| IGB03N120H2ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3.9A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.9A
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 16.1ns
Turn-off time: 403ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 3.9A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.9A
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 16.1ns
Turn-off time: 403ns
товар відсутній
| BSC037N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 114W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 114W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.7mΩ
Type of transistor: N-MOSFET
товар відсутній
| FP15R12W1T4 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 15A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: AG-EASY1B-1
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
товар відсутній
| IRFH8324TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH8325TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
товар відсутній
| IR38165MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; SVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; SVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
товар відсутній
| BSC093N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 4473 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.61 грн |
| 10+ | 37.75 грн |
| 25+ | 34.92 грн |
| 31+ | 28.02 грн |
| 83+ | 26.5 грн |
| BSC034N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 57W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 57W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 57W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
товар відсутній
| BSC042N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; 57W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 75A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
товар відсутній
| BSC047N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
товар відсутній
| BSC050N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 71A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 71A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC057N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
товар відсутній
| BSC057N03MSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 71A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
Drain-source voltage: 30V
Drain current: 71A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
Case: PG-TDSON-8
товар відсутній
| BSC059N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IAUT240N08S5N019ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 230W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.9mΩ
Drain current: 240A
Gate charge: 42nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 230W
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: N-MOSFET
товар відсутній
| BSC028N06LS3G |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| SGW50N60HS |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
товар відсутній
| IRFR4615TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR7546TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 71A
Power dissipation: 99W
Case: DPAK
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1744 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.85 грн |
| 10+ | 36.44 грн |
| 25+ | 31.58 грн |
| 33+ | 26.06 грн |
| 89+ | 24.68 грн |
| SPP18P06PHXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.58 грн |
| 10+ | 72.6 грн |
| 14+ | 61.71 грн |
| FS75R17KE3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 465W
Mechanical mounting: screw
товар відсутній
| BSP603S2L |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 5.2A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Case: SOT223
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 5.2A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Case: SOT223
Polarisation: unipolar
товар відсутній
| IM231L6T2BAKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 6A
Case: DIP 29x12 (PG-DIP-23)
Mounting: THT
Frequency: 20kHz
Topology: IGBT three-phase bridge
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Technology: ClPOS™ Micro; TRENCHSTOP™
Voltage class: 600V
Power dissipation: 10.5W
Operating voltage: 13.5...16.5/0...450V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Micro,TRENCHSTOP™
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 6A
Case: DIP 29x12 (PG-DIP-23)
Mounting: THT
Frequency: 20kHz
Topology: IGBT three-phase bridge
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Technology: ClPOS™ Micro; TRENCHSTOP™
Voltage class: 600V
Power dissipation: 10.5W
Operating voltage: 13.5...16.5/0...450V
товар відсутній
| BFR380L3E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
на замовлення 12511 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.32 грн |
| 58+ | 6.32 грн |
| 100+ | 5.66 грн |
| 157+ | 5.37 грн |
| 430+ | 5.08 грн |
| 2500+ | 4.94 грн |
| IPI60R380C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI65R380C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP60R380C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF3708PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 87W
Case: TO220AB
Gate-source voltage: ±12V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 87W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 87W
Case: TO220AB
Gate-source voltage: ±12V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP200N25N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB025N08N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFHM8326TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 19A
Drain-source voltage: 30V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 19A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 19A
Drain-source voltage: 30V
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
| IRFHM6342TR2PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
товар відсутній
| BSP296L6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IR11672ASTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
товар відсутній
| BFR740L3RHE6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
товар відсутній
| BFP405E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
товар відсутній
| BSP75N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.5Ω
Technology: HITFET®
Power dissipation: 1.8W
товар відсутній
| BSC040N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Power dissipation: 104W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 104W; PG-TDSON-8
Power dissipation: 104W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
товар відсутній
| BSC052N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 95A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 95A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| BSC061N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 74W
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Drain current: 82A
Drain-source voltage: 80V
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| BSC072N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TD122N22KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 3.3kA
Max. forward voltage: 1.95V
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Max. off-state voltage: 2.2kV
Load current: 122A
Max. load current: 220A
Semiconductor structure: double series
Case: BG-PB34-1
Max. forward impulse current: 3.3kA
Max. forward voltage: 1.95V
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
товар відсутній