Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2274 з 2274
| Фото | Назва | Виробник | Інформація |
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IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 36nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPDD60R125G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 120W Type of transistor: N-MOSFET On-state resistance: 0.125Ω Drain current: 20A Gate charge: 27nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 54A Mounting: SMD |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| IKFW90N60EH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Case: TO247-3 Power dissipation: 178W Technology: TRENCHSTOP™ Gate charge: 440nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 77A Pulsed collector current: 300A Turn-on time: 77ns Turn-off time: 237ns Type of transistor: IGBT |
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IPP60R950C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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DZ600N18K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.8kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
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| IDK02G120C5XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.7V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 6µA Max. forward impulse current: 31A Power dissipation: 75W |
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DZ600N08K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 0.8kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DZ600N16K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.6kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
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IPD70R2K0CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhanced |
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| IPDD60R102G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 139W Type of transistor: N-MOSFET On-state resistance: 0.102Ω Drain current: 23A Gate charge: 34nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 66A Mounting: SMD |
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IPD80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 13W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IPDD60R050G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 278W Type of transistor: N-MOSFET On-state resistance: 50mΩ Drain current: 47A Gate charge: 68nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 135A Mounting: SMD |
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IPD80R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1632 шт: термін постачання 21-30 дні (днів) |
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IPD80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 22W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 7.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPD95R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK Polarisation: unipolar Kind of package: reel Power dissipation: 37W Type of transistor: N-MOSFET On-state resistance: 2Ω Drain current: 2.4A Features of semiconductor devices: ESD protected gate Gate charge: 10nC Drain-source voltage: 950V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD |
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BSD314SPEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of channel: enhanced |
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TLE7250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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TLE7250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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TLE7251VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC Interface: CAN Mounting: SMD Case: PG-DSO-8 Number of receivers: 1 Operating temperature: -40...150°C DC supply current: 60mA Kind of package: reel; tape Number of transmitters: 1 |
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IPD80R1K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Kind of channel: enhanced |
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IPD80R1K4CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.3A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced |
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IPD80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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BSS83PH6327 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power: 0.36W Case: SOT23 On-state resistance: 2Ω Mounting: SMD |
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TD210N12KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 1.2kV Max. load current: 410A Max. forward voltage: 1.65V Load current: 210A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 6.6kA |
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TD215N22KOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB50-1 Max. off-state voltage: 2.2kV Max. load current: 410A Max. forward voltage: 1.8V Load current: 215A Semiconductor structure: double series Gate current: 200mA Max. forward impulse current: 7kA |
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SPB18P06PGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.6A Power dissipation: 81.1W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced |
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ISP752T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Industrial PROFET |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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| T1190N16TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck Mounting: Press-Pack Case: BG-T7526K-1 Max. off-state voltage: 1.6kV Max. load current: 2.8kA Load current: 1.19kA Gate current: 250mA Max. forward impulse current: 22.5kA |
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IRF7748L1TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET Mounting: SMD Power dissipation: 3.3W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET Drain-source voltage: 60V Drain current: 28A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET |
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| IPL60R125P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPDD60R125G7XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 120W
Type of transistor: N-MOSFET
On-state resistance: 0.125Ω
Drain current: 20A
Gate charge: 27nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 54A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 120W
Type of transistor: N-MOSFET
On-state resistance: 0.125Ω
Drain current: 20A
Gate charge: 27nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 54A
Mounting: SMD
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 319.75 грн |
| 5+ | 209.07 грн |
| 12+ | 197.46 грн |
| IKFW90N60EH3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 178W
Technology: TRENCHSTOP™
Gate charge: 440nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 77A
Pulsed collector current: 300A
Turn-on time: 77ns
Turn-off time: 237ns
Type of transistor: IGBT
товар відсутній
| IPP60R950C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 37W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| DZ600N18K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IDK02G120C5XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 6µA
Max. forward impulse current: 31A
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; PG-TO263-2; 75W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 6µA
Max. forward impulse current: 31A
Power dissipation: 75W
товар відсутній
| DZ600N08K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 800V; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11281.28 грн |
| DZ600N16K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IPD70R2K0CEAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhanced
товар відсутній
| IPDD60R102G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm: 66A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 139W
Type of transistor: N-MOSFET
On-state resistance: 0.102Ω
Drain current: 23A
Gate charge: 34nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 66A
Mounting: SMD
товар відсутній
| IPD80R4K5P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 13W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 13W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPDD60R050G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 278W
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 47A
Gate charge: 68nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 135A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 47A; Idm: 135A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 278W
Type of transistor: N-MOSFET
On-state resistance: 50mΩ
Drain current: 47A
Gate charge: 68nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 135A
Mounting: SMD
товар відсутній
| IPD80R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1632 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.8 грн |
| 8+ | 45.44 грн |
| 25+ | 34.92 грн |
| 67+ | 33.03 грн |
| IPD80R2K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPD95R2K0P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; DPAK
Polarisation: unipolar
Kind of package: reel
Power dissipation: 37W
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Drain current: 2.4A
Features of semiconductor devices: ESD protected gate
Gate charge: 10nC
Drain-source voltage: 950V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
товар відсутній
| BSD314SPEH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| TLE7250SJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7250XSJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| TLE7251VSJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 60mA
Kind of package: reel; tape
Number of transmitters: 1
товар відсутній
| IPD80R1K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD80R1K4CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD80R1K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| BSS83PH6327 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -330mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power: 0.36W
Case: SOT23
On-state resistance: 2Ω
Mounting: SMD
товар відсутній
| TD210N12KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 210A; BG-PB50-1; Ufmax: 1.65V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 1.2kV
Max. load current: 410A
Max. forward voltage: 1.65V
Load current: 210A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 6.6kA
товар відсутній
| TD215N22KOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
товар відсутній
| SPB18P06PGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| ISP752T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Industrial PROFET
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 121.18 грн |
| 5+ | 99.46 грн |
| 10+ | 86.39 грн |
| 27+ | 81.31 грн |
| 500+ | 78.4 грн |
| T1190N16TOFVTXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
товар відсутній
| IRF7748L1TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 28A; 3.3W; DirectFET
Mounting: SMD
Power dissipation: 3.3W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 60V
Drain current: 28A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
товар відсутній