Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136409) > Сторінка 2265 з 2274
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 200A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
TLE9250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
товар відсутній |
|||||||||||||
|
|
TLE9250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC; 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
товар відсутній |
|||||||||||||
 |
BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Collector-emitter voltage: 6V Current gain: 90...160 Collector current: 35mA Type of transistor: NPN Power dissipation: 0.21W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Mounting: SMD Case: TSFP-3 Frequency: 14GHz |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IPT029N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W Case: PG-HSOF-8 Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape On-state resistance: 2.9mΩ Mounting: SMD Pulsed drain current: 676A Power dissipation: 167W Gate charge: 70nC Technology: OptiMOS™ 5 |
товар відсутній |
|||||||||||||
|
|
IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP Mounting: THT Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 26W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 15nC Technology: CoolMOS™ P7 Case: TO220FP Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
|||||||||||||
|
|
IPA95R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP Mounting: THT Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: TO220FP Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
|||||||||||||
 |
IPD80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||||
|
|
IPD95R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK Mounting: SMD Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: DPAK Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
|||||||||||||
 |
IPP60R750E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3 Mounting: THT Power dissipation: 48W Polarisation: unipolar Technology: CoolMOS™ E6 Drain current: 5.7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 0.75Ω |
товар відсутній |
|||||||||||||
 |
IPP80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||||
 |
IPU80R750P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||||
|
|
IPAN70R750P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP Mounting: THT Drain-source voltage: 700V Drain current: 4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 20.8W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 8.3nC Technology: CoolMOS™ P7 Case: TO220FP Kind of channel: enhanced Gate-source voltage: ±16V |
на замовлення 344 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
BAS7004SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW Power dissipation: 0.25W Case: SOT363 Mounting: SMD Semiconductor structure: double series x2 Max. off-state voltage: 70V Load current: 70mA Max. forward impulse current: 0.1A Type of diode: Schottky switching |
товар відсутній |
|||||||||||||
|
|
IPP60R022S7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Type of transistor: N-MOSFET Technology: CoolMOS™ S7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 375A Power dissipation: 390W Case: TO220 Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: THT Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
BAS7006WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW Mounting: SMD Case: SOT323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
на замовлення 630 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FF200R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Case: AG-ECONO4-1 |
товар відсутній |
||||||||||||||
| TT162N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 162A Case: BG-PB34AT-1 Max. forward voltage: 1.41V Max. forward impulse current: 4.4kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
||||||||||||||
 |
1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-SOT23-6 Output current: -8...4A Number of channels: 1 Supply voltage: 4.5...20V Mounting: SMD Kind of package: reel; tape Voltage class: 80V |
на замовлення 2377 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BSC082N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IPL60R180P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
||||||||||||||
|
|
IPL60R104C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 122W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IRF6727MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Kind of package: reel Drain-source voltage: 30V Drain current: 180A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Case: DirectFET Mounting: SMD Technology: HEXFET® Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: AG-EASY1B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Technology: EasyPIM™ 1B Mechanical mounting: screw |
товар відсутній |
||||||||||||||
 |
PVI1050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF |
товар відсутній |
|||||||||||||
|
|
BSC030N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Power dissipation: 250W Polarisation: unipolar Case: PG-TO263-7 Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
|
|
IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Power dissipation: 250W Polarisation: unipolar Case: PG-TO263-7 Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET |
товар відсутній |
|||||||||||||
| IPD70N10S3L12ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
||||||||||||||
|
|
IPP70N10S312AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC070N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
BSC070N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
IRFU6215PBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
товар відсутній |
|||||||||||||
| ITS4130QEPDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Mounting: SMD Supply voltage: 5...45V DC Number of channels: 4 Case: PG-TSDSO-14 Operating temperature: -40...150°C Kind of package: reel; tape Output current: 1.25A Kind of output: N-Channel Turn-off time: 75µs Power dissipation: 1.8W Technology: Industrial PROFET On-state resistance: 0.13Ω Turn-on time: 75µs |
товар відсутній |
||||||||||||||
 |
ITS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 4.9...60V DC Technology: Industrial PROFET |
на замовлення 2308 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
TLF80511TCATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD Mounting: SMD Case: PG-TO263-3 Operating temperature: -40...150°C Kind of package: reel; tape Input voltage: 3.3...40V Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator |
товар відсутній |
|||||||||||||
 |
TLF80511TFV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD Mounting: SMD Case: DPAK Operating temperature: -40...150°C Kind of package: reel; tape Input voltage: 3.3...40V Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Voltage drop: 0.25V Type of integrated circuit: voltage regulator |
на замовлення 1632 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
SAF-XC888LM-8FFI 5V AC | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI x3; UART x3 Supply voltage: 5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
 |
XC8866FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC8868FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
 |
XC8888FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC878M16FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64 Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 3kB SRAM; 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
товар відсутній |
|||||||||||||
|
|
XC886C6FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC886C8FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC886LM6FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC886LM8FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
IPP65R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IPN60R2K1CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 6.7nC Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
IRF6715MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 180A Power dissipation: 78W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
IRF6716MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 78W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
IRFH7110TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Mounting: SMD Case: PQFN5X6 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 3.6W Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 100V Drain current: 11A |
товар відсутній |
|||||||||||||
| IPT60R022S7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: SMD Polarisation: unipolar Kind of package: reel Case: PG-HSOF-8 Power dissipation: 390W Gate charge: 31nC Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 375A Drain-source voltage: 600V Drain current: 23A On-state resistance: 22mΩ Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| IPZA60R024P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 164nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 386A Drain-source voltage: 650V Drain current: 63A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 291W Polarisation: unipolar |
товар відсутній |
||||||||||||||
|
|
IPP65R190CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
|||||||||||||
 |
XC822M1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
товар відсутній |
|||||||||||||
|
|
XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
на замовлення 807 шт: термін постачання 21-30 дні (днів) |
|
| IPA083N10NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98 грн |
| 10+ | 86.39 грн |
| 11+ | 76.22 грн |
| 31+ | 71.87 грн |
| TLE9250SJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
товар відсутній
| TLE9250XSJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
товар відсутній
| BFR360FH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Collector-emitter voltage: 6V
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Collector-emitter voltage: 6V
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.93 грн |
| 15+ | 23.96 грн |
| IPT029N08N5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 2.9mΩ
Mounting: SMD
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
On-state resistance: 2.9mΩ
Mounting: SMD
Pulsed drain current: 676A
Power dissipation: 167W
Gate charge: 70nC
Technology: OptiMOS™ 5
товар відсутній
| IPA80R750P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Mounting: THT
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Mounting: THT
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 15nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPA95R750P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPD80R750P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPD95R750P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPP60R750E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
товар відсутній
| IPP80R750P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPU80R750P7AKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPAN70R750P7SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Mounting: THT
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±16V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Mounting: THT
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±16V
на замовлення 344 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.71 грн |
| 7+ | 52.27 грн |
| 10+ | 46.46 грн |
| 23+ | 37.97 грн |
| 50+ | 37.89 грн |
| 61+ | 35.86 грн |
| IAUC64N08S5L075ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BAS7004SH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Semiconductor structure: double series x2
Max. off-state voltage: 70V
Load current: 70mA
Max. forward impulse current: 0.1A
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Semiconductor structure: double series x2
Max. off-state voltage: 70V
Load current: 70mA
Max. forward impulse current: 0.1A
Type of diode: Schottky switching
товар відсутній
| IPP60R022S7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 375A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 375A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| BAS7006WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
на замовлення 630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 313+ | 1.25 грн |
| FF200R17KE4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13295.96 грн |
| FS150R17PE4BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO4-1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO4-1
товар відсутній
| TT162N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| 1EDN7550BXTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-6
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 80V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-6
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 80V
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.42 грн |
| 10+ | 48.64 грн |
| 25+ | 34.12 грн |
| 69+ | 31.94 грн |
| BSC082N10LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPL60R180P6AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP60R180P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPL60R104C7AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
товар відсутній
| IPB016N06L3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF6727MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 30V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Case: DirectFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Kind of package: reel
Drain-source voltage: 30V
Drain current: 180A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Case: DirectFET
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
| FP25R12W1T7B11BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
товар відсутній
| PVI1050NSPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
товар відсутній
| BSC030N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB011N04LGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Case: PG-TO263-7
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Case: PG-TO263-7
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPB011N04NGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Case: PG-TO263-7
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Power dissipation: 250W
Polarisation: unipolar
Case: PG-TO263-7
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPD70N10S3L12ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPP70N10S312AKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 100V; 48A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSC070N10NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC070N10NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFU6215PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товар відсутній
| ITS4130QEPDXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
товар відсутній
| ITS4140N |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
на замовлення 2308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.13 грн |
| 13+ | 68.24 грн |
| 35+ | 64.61 грн |
| 500+ | 62.43 грн |
| TLF80511TCATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD
Mounting: SMD
Case: PG-TO263-3
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-3; SMD
Mounting: SMD
Case: PG-TO263-3
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
товар відсутній
| TLF80511TFV50ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Mounting: SMD
Case: DPAK
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD
Mounting: SMD
Case: DPAK
Operating temperature: -40...150°C
Kind of package: reel; tape
Input voltage: 3.3...40V
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
на замовлення 1632 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.71 грн |
| 18+ | 47.19 грн |
| 49+ | 45.01 грн |
| 1000+ | 43.56 грн |
| SAF-XC888LM-8FFI 5V AC |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8866FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8868FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC8888FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC878M16FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
товар відсутній
| XC886C6FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC886C8FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC886LM6FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC886LM8FFI5VACFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| IPP65R190E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPN60R2K1CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhanced
товар відсутній
| IRF6715MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6716MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 78W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 78W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH7110TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
товар відсутній
| IPT60R022S7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: PG-HSOF-8
Power dissipation: 390W
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: PG-HSOF-8
Power dissipation: 390W
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPZA60R024P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
товар відсутній
| IPP65R190CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| XC822M1FRIAAFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товар відсутній
| XC822MT1FRIAAFXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 4kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
на замовлення 807 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.52 грн |