Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136437) > Сторінка 2257 з 2274
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BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 30W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.7mΩ Drain current: 64A Technology: OptiMOS™ 5 Kind of channel: enhanced Drain-source voltage: 30V Gate-source voltage: ±20V |
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IRS10752LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SOT23-6 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 10...18V DC Output current: -240...160mA Type of integrated circuit: driver Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-side Topology: single transistor Voltage class: 100V Case: SOT23-6 Turn-on time: 225ns Turn-off time: 255ns |
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1ED44175N01BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Case: SOT23-6 Supply voltage: 12.7...20V Output current: -2.6...2.6A Number of channels: 1 Kind of package: reel; tape Protection: anti-overload OPP; undervoltage UVP Technology: EiceDRIVER™ Kind of integrated circuit: IGBT gate driver; low-side Topology: single transistor Voltage class: 25V Mounting: SMD |
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BSC050NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8 Mounting: SMD Drain-source voltage: 25V Drain current: 39A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TDSON-8 |
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IRFR1010ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 91A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR1010ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 91A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR1018ETRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 79A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| BCR430UXTSA2 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: PG-SOT23-6 Output current: 20...100mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 6...42V |
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IPC70N04S5-4R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 24.2nC Kind of channel: enhanced |
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IPC70N04S5L-4R2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced |
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IPC90N04S5-3R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 63W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32.6nC Kind of channel: enhanced |
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IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhanced |
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| IAUC45N04S6L063HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 8.5mΩ Drain current: 15A Drain-source voltage: 40V Case: PG-TDSON-8 Gate charge: 13nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±16V Polarisation: unipolar Pulsed drain current: 134A Power dissipation: 41W |
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| IAUC45N04S6N070HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 9mΩ Drain current: 14A Drain-source voltage: 40V Case: PG-TDSON-8 Gate charge: 12nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 119A Power dissipation: 41W |
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| IAUC120N04S6L005ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 1550A Power dissipation: 187W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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XMC4100F64F128ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 128kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...85°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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XMC4100F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Memory: 20kB SRAM; 128kB FLASH Integrated circuit features: clock gaiting; DSP; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-64 Operating temperature: -40...125°C Number of inputs/outputs: 35 Family: XMC4100 Number of A/D channels: 9 Kind of architecture: Cortex M4 |
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BSC252N10NSFGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Kind of channel: enhanced |
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IPA093N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRLR3915TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 61A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLR6225TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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| BSZ014NE2LS5IFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.45mΩ Gate-source voltage: ±16V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 |
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Mounting: SMD On-state resistance: 1.8mΩ Gate-source voltage: ±20V Power dissipation: 69W Polarisation: unipolar Technology: OptiMOS™ Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Case: PG-TSDSON-8 |
на замовлення 4974 шт: термін постачання 21-30 дні (днів) |
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BSZ018NE2LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ Case: PG-TSDSON-8 Mounting: SMD On-state resistance: 1.8mΩ Power dissipation: 69W Drain current: 40A Kind of channel: enhanced Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar |
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BSZ019N03LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced |
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BFP650FH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4 Mounting: SMD Case: TSFP-4 Power dissipation: 0.5W Technology: SiGe:C Kind of package: reel; tape Kind of transistor: RF Frequency: 42GHz Collector-emitter voltage: 13V Collector current: 0.15A Type of transistor: NPN Polarisation: bipolar |
на замовлення 1714 шт: термін постачання 21-30 дні (днів) |
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BFP650H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343 Case: SOT343 Technology: SiGe:C Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 13V Collector current: 0.15A Type of transistor: NPN Frequency: 42GHz Power dissipation: 0.5W Polarisation: bipolar Kind of transistor: RF |
на замовлення 2669 шт: термін постачання 21-30 дні (днів) |
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3 Mounting: SMD Features of semiconductor devices: logic level Case: PQFN3.3X3.3 Power dissipation: 2.7W Technology: HEXFET® Kind of package: reel Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 20V Drain current: 40A Type of transistor: N-MOSFET |
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IRFH6200TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BCR562E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
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IRFR13N20DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFU13N20DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
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| XMC1301Q024F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 22 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1301Q040F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1301T016F0008ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 8kB FLASH; 16kB SRAM Number of inputs/outputs: 14 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1301T016F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Interface: GPIO; USIC x2 Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1301T016X0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 14 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1301T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q024F0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q024X0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 22 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q024X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 26 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q040X0128ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1302T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 14 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x2; BCCU; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1302T038X0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB FLASH; 16kB SRAM Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1302T038X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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DD89N14K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA Max. off-state voltage: 1.4kV Max. forward voltage: 0.75V Load current: 89A Semiconductor structure: double series Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: BG-PB20-1 |
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IR2233PBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: THT Operating temperature: -40...125°C Number of channels: 6 Kind of package: tube Type of integrated circuit: driver Output current: -420...200mA Turn-off time: 700ns Turn-on time: 750ns Supply voltage: 10...20V DC Power: 1.5W Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Case: DIP28-W |
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IR2233SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Mounting: SMD Operating temperature: -40...125°C Number of channels: 6 Kind of package: tube Type of integrated circuit: driver Output current: -420...200mA Turn-off time: 700ns Turn-on time: 750ns Supply voltage: 10...20V DC Power: 1.6W Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Case: SO28-W |
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IPP030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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| BSZ096N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 160A Power dissipation: 69W Case: PG-TSDSON-8FL Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -16A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPN50R3K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.6A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 4.3nC Kind of channel: enhanced |
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IRF6644TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.3A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFB7446PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Drain-source voltage: 40V Drain current: 123A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 99W Gate charge: 62nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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IRFH7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 85A Power dissipation: 104W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel Kind of channel: enhanced Trade name: StrongIRFET |
на замовлення 3665 шт: термін постачання 21-30 дні (днів) |
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IRFH7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6 Power dissipation: 78W Polarisation: unipolar Kind of package: reel Gate charge: 65nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: SMD Case: PQFN5X6 Drain-source voltage: 40V Drain current: 117A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET |
товар відсутній |
| BSC0504NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Technology: OptiMOS™ 5
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Drain current: 64A
Technology: OptiMOS™ 5
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±20V
товар відсутній
| IRS10752LTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...18V DC
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 100V
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
товар відсутній
| 1ED44175N01BXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Case: SOT23-6
Supply voltage: 12.7...20V
Output current: -2.6...2.6A
Number of channels: 1
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of integrated circuit: IGBT gate driver; low-side
Topology: single transistor
Voltage class: 25V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Case: SOT23-6
Supply voltage: 12.7...20V
Output current: -2.6...2.6A
Number of channels: 1
Kind of package: reel; tape
Protection: anti-overload OPP; undervoltage UVP
Technology: EiceDRIVER™
Kind of integrated circuit: IGBT gate driver; low-side
Topology: single transistor
Voltage class: 25V
Mounting: SMD
товар відсутній
| BSC050NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 25V
Drain current: 39A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 25V
Drain current: 39A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
товар відсутній
| IRFR1010ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR1010ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR1018ETRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BCR430UXTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V
товар відсутній
| IPC70N04S5-4R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
товар відсутній
| IPC70N04S5L-4R2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
товар відсутній
| IPC90N04S5-3R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32.6nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32.6nC
Kind of channel: enhanced
товар відсутній
| IPC90N04S5L-3R3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhanced
товар відсутній
| IAUC45N04S6L063HATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate charge: 13nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±16V
Polarisation: unipolar
Pulsed drain current: 134A
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate charge: 13nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±16V
Polarisation: unipolar
Pulsed drain current: 134A
Power dissipation: 41W
товар відсутній
| IAUC45N04S6N070HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 14A
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate charge: 12nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 119A
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 14A
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate charge: 12nC
Technology: OptiMOS™ 6
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Pulsed drain current: 119A
Power dissipation: 41W
товар відсутній
| IAUC120N04S6L005ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC120N04S6L009ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC120N04S6L012ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC120N04S6N009ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| XMC4100F64F128ABXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...85°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| XMC4100F64K128ABXQSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 20kB SRAM; 128kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of inputs/outputs: 35
Family: XMC4100
Number of A/D channels: 9
Kind of architecture: Cortex M4
товар відсутній
| BSC252N10NSFGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPA093N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRLR3915TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLR6225TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.58 грн |
| 10+ | 48.78 грн |
| 28+ | 31.14 грн |
| BSZ014NE2LS5IFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.45mΩ
Gate-source voltage: ±16V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.45mΩ
Gate-source voltage: ±16V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
товар відсутній
| BSZ018NE2LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
на замовлення 4974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.6 грн |
| 17+ | 49.91 грн |
| 45+ | 47.19 грн |
| BSZ018NE2LSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™
Case: PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Power dissipation: 69W
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Technology: OptiMOS™
Case: PG-TSDSON-8
Mounting: SMD
On-state resistance: 1.8mΩ
Power dissipation: 69W
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| BSZ019N03LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BFP650FH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Power dissipation: 0.5W
Technology: SiGe:C
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Power dissipation: 0.5W
Technology: SiGe:C
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Polarisation: bipolar
на замовлення 1714 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.4 грн |
| 15+ | 25.26 грн |
| 25+ | 23.67 грн |
| BFP650H6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Case: SOT343
Technology: SiGe:C
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Frequency: 42GHz
Power dissipation: 0.5W
Polarisation: bipolar
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Case: SOT343
Technology: SiGe:C
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Frequency: 42GHz
Power dissipation: 0.5W
Polarisation: bipolar
Kind of transistor: RF
на замовлення 2669 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 11+ | 34.7 грн |
| 25+ | 30.64 грн |
| 32+ | 26.13 грн |
| 88+ | 24.68 грн |
| IRLHM620TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Features of semiconductor devices: logic level
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Technology: HEXFET®
Kind of package: reel
Polarisation: unipolar
Kind of channel: enhanced
Drain-source voltage: 20V
Drain current: 40A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Features of semiconductor devices: logic level
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Technology: HEXFET®
Kind of package: reel
Polarisation: unipolar
Kind of channel: enhanced
Drain-source voltage: 20V
Drain current: 40A
Type of transistor: N-MOSFET
товар відсутній
| IRFH6200TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BCR562E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
товар відсутній
| IRFR13N20DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFU13N20DPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
товар відсутній
| XMC1301Q024F0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1301Q040F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1301T016F0008ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 8kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 8kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1301T016F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1301T016X0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; CCU8; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1301T038F0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; EEPROM emulation (DataFlash); internal temperature sensor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302Q024F0064ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302Q024X0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBFLASH,16kBSRAM; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302Q024X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302Q040X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 26
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302Q040X0128ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302T016X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; BCCU; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 14
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x2; BCCU; DSP; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302T038X0016ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| XMC1302T038X0032ABXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
товар відсутній
| DD89N14K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA
Max. off-state voltage: 1.4kV
Max. forward voltage: 0.75V
Load current: 89A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB20-1
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 89A; BG-PB20-1; Ifsm: 2.4kA
Max. off-state voltage: 1.4kV
Max. forward voltage: 0.75V
Load current: 89A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB20-1
товар відсутній
| IR2233PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Type of integrated circuit: driver
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Supply voltage: 10...20V DC
Power: 1.5W
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Case: DIP28-W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Type of integrated circuit: driver
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Supply voltage: 10...20V DC
Power: 1.5W
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Case: DIP28-W
товар відсутній
| IR2233SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Type of integrated circuit: driver
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Supply voltage: 10...20V DC
Power: 1.6W
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Case: SO28-W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Kind of package: tube
Type of integrated circuit: driver
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Supply voltage: 10...20V DC
Power: 1.6W
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Case: SO28-W
товар відсутній
| IPP030N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 338.52 грн |
| 3+ | 282.39 грн |
| 4+ | 272.96 грн |
| 9+ | 257.71 грн |
| BSZ096N10LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 160A; 69W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 160A
Power dissipation: 69W
Case: PG-TSDSON-8FL
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7410TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPN50R3K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of channel: enhanced
товар відсутній
| IRF6644TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.3A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.3A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFB7446PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain-source voltage: 40V
Drain current: 123A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain-source voltage: 40V
Drain current: 123A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.36 грн |
| 7+ | 59.53 грн |
| 10+ | 51.54 грн |
| 19+ | 45.01 грн |
| 52+ | 42.11 грн |
| IRFH7440TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 3665 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.72 грн |
| 5+ | 80.58 грн |
| 12+ | 70.42 грн |
| 33+ | 66.06 грн |
| IRFH7446TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: SMD
Case: PQFN5X6
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: SMD
Case: PQFN5X6
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
товар відсутній