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IRGP4640D-EPBF IRGP4640D-EPBF INFINEON TECHNOLOGIES IRGP4640D-EPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 65A; 250W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 65A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+213.43 грн
3+ 174.95 грн
6+ 151 грн
16+ 143.01 грн
Мінімальне замовлення: 2
IPB031NE7N3GATMA1 IPB031NE7N3GATMA1 INFINEON TECHNOLOGIES IPB031NE7N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
товар відсутній
IPB036N12N3GATMA1 IPB036N12N3GATMA1 INFINEON TECHNOLOGIES IPB036N12N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
On-state resistance: 3.6mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 INFINEON TECHNOLOGIES BSC077N12NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 98A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 INFINEON TECHNOLOGIES BSC600N25NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IGW08T120 IGW08T120 INFINEON TECHNOLOGIES IGW08T120-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
товар відсутній
BSC019N02KSGAUMA1 BSC019N02KSGAUMA1 INFINEON TECHNOLOGIES BSC019N02KSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 104W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 104W
Type of transistor: N-MOSFET
On-state resistance: 1.95mΩ
Drain current: 100A
Drain-source voltage: 20V
товар відсутній
BSC019N04NSGATMA1 BSC019N04NSGATMA1 INFINEON TECHNOLOGIES BSC019N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
TLE4675GATMA1 TLE4675GATMA1 INFINEON TECHNOLOGIES TLE4675.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.4A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO263-5
Tolerance: ±2%
Mounting: SMD
товар відсутній
BSC018N04LSGATMA1 BSC018N04LSGATMA1 INFINEON TECHNOLOGIES BSC018N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 INFINEON TECHNOLOGIES BSZ16DN25NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.9A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF7832TRPBF IRF7832TRPBF INFINEON TECHNOLOGIES irf7832pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 747 шт:
термін постачання 21-30 дні (днів)
7+52.12 грн
21+ 41.6 грн
56+ 39.35 грн
500+ 38.62 грн
Мінімальне замовлення: 7
BSP88H6327XTSA1 BSP88H6327XTSA1 INFINEON TECHNOLOGIES BSP88H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 813 шт:
термін постачання 21-30 дні (днів)
12+32.91 грн
25+ 24.68 грн
47+ 17.96 грн
127+ 16.98 грн
Мінімальне замовлення: 12
BSD223PH6327XTSA1 BSD223PH6327XTSA1 INFINEON TECHNOLOGIES BSD223PH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1860 шт:
термін постачання 21-30 дні (днів)
46+8.6 грн
55+ 6.61 грн
156+ 5.49 грн
428+ 5.19 грн
1000+ 5.15 грн
Мінімальне замовлення: 46
BSP135H6327XTSA1 BSP135H6327XTSA1 INFINEON TECHNOLOGIES BSP135H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 0.12A
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
5+86 грн
10+ 64.61 грн
18+ 49.36 грн
48+ 46.46 грн
200+ 45.73 грн
500+ 44.28 грн
Мінімальне замовлення: 5
BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES BSP316PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
товар відсутній
BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES BSP317PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 856 шт:
термін постачання 21-30 дні (днів)
5+93.03 грн
8+ 51.83 грн
25+ 34.44 грн
68+ 32.56 грн
Мінімальне замовлення: 5
BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES BSP322PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
7+62.93 грн
11+ 35.06 грн
25+ 31.58 грн
36+ 23.16 грн
99+ 21.85 грн
Мінімальне замовлення: 7
BSP372NH6327XTSA1 BSP372NH6327XTSA1 INFINEON TECHNOLOGIES BSP372NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1058 шт:
термін постачання 21-30 дні (днів)
9+44.01 грн
25+ 36.73 грн
30+ 28.16 грн
82+ 26.62 грн
1000+ 26.28 грн
Мінімальне замовлення: 9
BSP315PH6327XTSA1 BSP315PH6327XTSA1 INFINEON TECHNOLOGIES BSP315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 987 шт:
термін постачання 21-30 дні (днів)
14+28.69 грн
25+ 23.96 грн
45+ 18.66 грн
124+ 17.64 грн
Мінімальне замовлення: 14
BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1881 шт:
термін постачання 21-30 дні (днів)
18+21.89 грн
21+ 17.42 грн
50+ 12.41 грн
100+ 10.38 грн
191+ 4.5 грн
527+ 4.21 грн
Мінімальне замовлення: 18
F475R06W1E3BOMA1 INFINEON TECHNOLOGIES Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товар відсутній
IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES IPP65R065C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRS25411STRPBF IRS25411STRPBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED controller; SO8; -700÷500mA
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED controller
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
товар відсутній
IRS25752LTRPBF IRS25752LTRPBF INFINEON TECHNOLOGIES IRS25752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Case: SOT23-6
Supply voltage: 10...18V DC
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
товар відсутній
IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Gate charge: 24.2nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: PG-TSDSON-8
товар відсутній
IPA60R250CPXKSA1 IPA60R250CPXKSA1 INFINEON TECHNOLOGIES IPA60R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380C6XKSA1 IPA60R380C6XKSA1 INFINEON TECHNOLOGIES IPA60R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380E6XKSA1 IPA60R380E6XKSA1 INFINEON TECHNOLOGIES IPA60R380E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES IPA60R380P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R460CEXKSA1 IPA60R460CEXKSA1 INFINEON TECHNOLOGIES IPA60R460CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.1A; 74W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.1A
Power dissipation: 74W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R520C6XKSA1 IPA60R520C6XKSA1 INFINEON TECHNOLOGIES IPA60R520C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R600E6XKSA1 IPA60R600E6XKSA1 INFINEON TECHNOLOGIES IPA60R600E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R600P6XKSA1 IPA60R600P6XKSA1 INFINEON TECHNOLOGIES IPA60R600P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R650CEXKSA1 IPA60R650CEXKSA1 INFINEON TECHNOLOGIES IPA60R650CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
5+72.6 грн
10+ 63.16 грн
16+ 55.17 грн
43+ 51.54 грн
Мінімальне замовлення: 5
IRF8788TRPBF IRF8788TRPBF INFINEON TECHNOLOGIES irf8788pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Case: SO8
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Drain-source voltage: 30V
Drain current: 24A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
товар відсутній
AIHD06N60RATMA1 AIHD06N60RATMA1 INFINEON TECHNOLOGIES AIHD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IRL6342TRPBF IRL6342TRPBF INFINEON TECHNOLOGIES irl6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
на замовлення 3451 шт:
термін постачання 21-30 дні (днів)
15+26.82 грн
25+ 20.76 грн
47+ 18 грн
129+ 17.06 грн
Мінімальне замовлення: 15
IRS2101PBF IRS2101PBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
товар відсутній
IRS2101SPBF IRS2101SPBF INFINEON TECHNOLOGIES irs2101pbf.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
товар відсутній
IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES IPG20N04S409.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhanced
товар відсутній
IPB020N04NGATMA1 IPB020N04NGATMA1 INFINEON TECHNOLOGIES IPB020N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPI120N04S402AKSA1 IPI120N04S402AKSA1 INFINEON TECHNOLOGIES IPI120N04S402.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
товар відсутній
IPP120N04S302AKSA1 IPP120N04S302AKSA1 INFINEON TECHNOLOGIES IPP120N04S302.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
товар відсутній
BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT323; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Power dissipation: 0.15W
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
57+6.88 грн
59+ 6.24 грн
Мінімальне замовлення: 57
IRFR3518TRPBF IRFR3518TRPBF INFINEON TECHNOLOGIES irfr3518pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BTS5210G  BTS5210G  INFINEON TECHNOLOGIES BTS5210G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
товар відсутній
BTF3125EJXUMA1 INFINEON TECHNOLOGIES BTF3125EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1W
Turn-on time: 1.35µs
Turn-off time: 2µs
товар відсутній
DD160N22K  DD160N22K  INFINEON TECHNOLOGIES DD160N22K.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Max. off-state voltage: 2.2kV
Load current: 160A
Case: BG-PB34-1
Max. forward impulse current: 4.6kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.4V
Electrical mounting: screw
Type of module: diode
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+11604.94 грн
BCR553E6327HTSA1 BCR553E6327HTSA1 INFINEON TECHNOLOGIES bcr553.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a37301144080e0fd030b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
BCR555E6327HTSA1 BCR555E6327HTSA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
BCR555E6433HTMA1 BCR555E6433HTMA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
товар відсутній
IRG4PSC71KPBF IRG4PSC71KPBF INFINEON TECHNOLOGIES irg4psc71k.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 85A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 85A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
товар відсутній
IRGB6B60KDPBF IRGB6B60KDPBF INFINEON TECHNOLOGIES irgs6b60kdpbf.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRGIB15B60KD1P IRGIB15B60KD1P INFINEON TECHNOLOGIES irgib15b60kd1p.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 52W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRGP4640D-EPBF IRGP4640D-EPBF.pdf
IRGP4640D-EPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 65A; 250W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 65A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+213.43 грн
3+ 174.95 грн
6+ 151 грн
16+ 143.01 грн
Мінімальне замовлення: 2
IPB031NE7N3GATMA1 IPB031NE7N3G-DTE.pdf
IPB031NE7N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO263-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
товар відсутній
IPB036N12N3GATMA1 IPB036N12N3G-DTE.pdf
IPB036N12N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
On-state resistance: 3.6mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
товар відсутній
BSC077N12NS3GATMA1 BSC077N12NS3G-DTE.pdf
BSC077N12NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 98A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 98A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC600N25NS3GATMA1 BSC600N25NS3G-DTE.pdf
BSC600N25NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 125W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IGW08T120 IGW08T120-DTE.pdf
IGW08T120
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 8A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
товар відсутній
BSC019N02KSGAUMA1 BSC019N02KSG-DTE.pdf
BSC019N02KSGAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 104W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 104W
Type of transistor: N-MOSFET
On-state resistance: 1.95mΩ
Drain current: 100A
Drain-source voltage: 20V
товар відсутній
BSC019N04NSGATMA1 BSC019N04NSG-DTE.pdf
BSC019N04NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
TLE4675GATMA1 TLE4675.pdf
TLE4675GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; PG-TO263-5; SMD
Operating temperature: -40...150°C
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.4A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO263-5
Tolerance: ±2%
Mounting: SMD
товар відсутній
BSC018N04LSGATMA1 BSC018N04LSG-DTE.pdf
BSC018N04LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ16DN25NS3GATMA1 BSZ16DN25NS3G-DTE.pdf
BSZ16DN25NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.9A
Power dissipation: 62.5W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF7832TRPBF description irf7832pbf.pdf
IRF7832TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 747 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+52.12 грн
21+ 41.6 грн
56+ 39.35 грн
500+ 38.62 грн
Мінімальне замовлення: 7
BSP88H6327XTSA1 BSP88H6327XTSA1.pdf
BSP88H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 813 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
12+32.91 грн
25+ 24.68 грн
47+ 17.96 грн
127+ 16.98 грн
Мінімальне замовлення: 12
BSD223PH6327XTSA1 BSD223PH6327XTSA1-DTE.pdf
BSD223PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1860 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
46+8.6 грн
55+ 6.61 грн
156+ 5.49 грн
428+ 5.19 грн
1000+ 5.15 грн
Мінімальне замовлення: 46
BSP135H6327XTSA1 BSP135H6327XTSA1.pdf
BSP135H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 0.12A
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+86 грн
10+ 64.61 грн
18+ 49.36 грн
48+ 46.46 грн
200+ 45.73 грн
500+ 44.28 грн
Мінімальне замовлення: 5
BSP316PH6327XTSA1 BSP316PH6327XTSA1-dte.pdf
BSP316PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
товар відсутній
BSP317PH6327XTSA1 BSP317PH6327XTSA1-dte.pdf
BSP317PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 856 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+93.03 грн
8+ 51.83 грн
25+ 34.44 грн
68+ 32.56 грн
Мінімальне замовлення: 5
BSP322PH6327XTSA1 BSP322PH6327XTSA1-dte.pdf
BSP322PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+62.93 грн
11+ 35.06 грн
25+ 31.58 грн
36+ 23.16 грн
99+ 21.85 грн
Мінімальне замовлення: 7
BSP372NH6327XTSA1 BSP372NH6327XTSA1.pdf
BSP372NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1058 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+44.01 грн
25+ 36.73 грн
30+ 28.16 грн
82+ 26.62 грн
1000+ 26.28 грн
Мінімальне замовлення: 9
BSP315PH6327XTSA1 BSP315PH6327XTSA1-dte.pdf
BSP315PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 987 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+28.69 грн
25+ 23.96 грн
45+ 18.66 грн
124+ 17.64 грн
Мінімальне замовлення: 14
BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1881 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+21.89 грн
21+ 17.42 грн
50+ 12.41 грн
100+ 10.38 грн
191+ 4.5 грн
527+ 4.21 грн
Мінімальне замовлення: 18
F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товар відсутній
IPP65R065C7XKSA1 IPP65R065C7-DTE.pdf
IPP65R065C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IRS25411STRPBF irs25401pbf.pdf
IRS25411STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED controller; SO8; -700÷500mA
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED controller
Case: SO8
Output current: -700...500mA
Power: 625mW
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 180ns
товар відсутній
IRS25752LTRPBF IRS25752ltrpbf.pdf
IRS25752LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Operating temperature: -40...125°C
Case: SOT23-6
Supply voltage: 10...18V DC
Turn-on time: 225ns
Turn-off time: 255ns
Output current: -240...160mA
Type of integrated circuit: driver
Number of channels: 1
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Voltage class: 600V
Mounting: SMD
товар відсутній
IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Gate charge: 24.2nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: PG-TSDSON-8
товар відсутній
IPA60R250CPXKSA1 IPA60R250CP-DTE.pdf
IPA60R250CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380C6XKSA1 IPA60R380C6-DTE.pdf
IPA60R380C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380E6XKSA1 IPA60R380E6-DTE.pdf
IPA60R380E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R380P6XKSA1 IPA60R380P6-DTE.pdf
IPA60R380P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R460CEXKSA1 IPA60R460CE-DTE.pdf
IPA60R460CEXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.1A; 74W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.1A
Power dissipation: 74W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R520C6XKSA1 IPA60R520C6-DTE.pdf
IPA60R520C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.1A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R600E6XKSA1 IPA60R600E6-DTE.pdf
IPA60R600E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R600P6XKSA1 IPA60R600P6-DTE.pdf
IPA60R600P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA60R650CEXKSA1 IPA60R650CE-DTE.pdf
IPA60R650CEXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+72.6 грн
10+ 63.16 грн
16+ 55.17 грн
43+ 51.54 грн
Мінімальне замовлення: 5
IRF8788TRPBF irf8788pbf.pdf
IRF8788TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 2.5W; SO8
Case: SO8
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Drain-source voltage: 30V
Drain current: 24A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
товар відсутній
AIHD06N60RATMA1 AIHD06N60R.pdf
AIHD06N60RATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IRL6342TRPBF irl6342pbf.pdf
IRL6342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
на замовлення 3451 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+26.82 грн
25+ 20.76 грн
47+ 18 грн
129+ 17.06 грн
Мінімальне замовлення: 15
IRS2101PBF description irs2101pbf.pdf
IRS2101PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
товар відсутній
IRS2101SPBF description irs2101pbf.pdf
IRS2101SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
товар відсутній
IPG20N04S409ATMA1 IPG20N04S409.pdf
IPG20N04S409ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhanced
товар відсутній
IPB020N04NGATMA1 IPB020N04NG-DTE.pdf
IPB020N04NGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPI120N04S402AKSA1 IPI120N04S402.pdf
IPI120N04S402AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
товар відсутній
IPP120N04S302AKSA1 IPP120N04S302.pdf
IPP120N04S302AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 160nC
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2mΩ
Type of transistor: N-MOSFET
товар відсутній
BAT1705WH6327XTSA1 BAT1704E6327HTSA1.pdf
BAT1705WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT323; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: common cathode; double
Case: SOT323
Power dissipation: 0.15W
на замовлення 776 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
57+6.88 грн
59+ 6.24 грн
Мінімальне замовлення: 57
IRFR3518TRPBF irfr3518pbf.pdf
IRFR3518TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
BTS5210G  BTS5210G.pdf
BTS5210G 
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
товар відсутній
BTF3125EJXUMA1 BTF3125EJ.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1W
Turn-on time: 1.35µs
Turn-off time: 2µs
товар відсутній
DD160N22K  DD160N22K.pdf
DD160N22K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Max. off-state voltage: 2.2kV
Load current: 160A
Case: BG-PB34-1
Max. forward impulse current: 4.6kA
Semiconductor structure: double series
Mechanical mounting: screw
Max. forward voltage: 1.4V
Electrical mounting: screw
Type of module: diode
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+11604.94 грн
BCR553E6327HTSA1 bcr553.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a37301144080e0fd030b
BCR553E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
BCR555E6327HTSA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
BCR555E6433HTMA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6433HTMA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Frequency: 150MHz
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Power dissipation: 0.33W
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Mounting: SMD
товар відсутній
IRG4IBC10UDPBF irg4ibc10udpbf.pdf
IRG4IBC10UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRG4IBC30WPBF irg4ibc30wpbf.pdf
IRG4IBC30WPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
товар відсутній
IRG4PSC71KPBF irg4psc71k.pdf
IRG4PSC71KPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 85A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 85A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
товар відсутній
IRGB6B60KDPBF description irgs6b60kdpbf.pdf
IRGB6B60KDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRGIB15B60KD1P irgib15b60kd1p.pdf
IRGIB15B60KD1P
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 52W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
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