Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136423) > Сторінка 2261 з 2274
| Фото | Назва | Виробник | Інформація |
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| ETD480N22P60HPSA1 | INFINEON TECHNOLOGIES |
 Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 480A; BG-PB60ECO-1; Ufmax: 1.83V Case: BG-PB60ECO-1 Gate current: 250mA Max. forward voltage: 1.83V Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Load current: 480A Max. load current: 700A Type of module: diode-thyristor Semiconductor structure: double series Max. forward impulse current: 14.7kA |
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| ICL8800XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED controller; PFC controller; SMPS controller Case: PG-DSO-8 Output current: -125...250mA Number of channels: 1 Integrated circuit features: funkcja Soft-Start Mounting: SMD Operating voltage: 8.1...23V Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
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TT215N20KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2kV; 215A; BG-PB50-1; Ufmax: 1.8V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| IRFR812TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK Case: DPAK Mounting: SMD Drain-source voltage: 500V Drain current: 2.3A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14.4A |
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IPA50R140CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 18.5A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA50R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP Kind of package: tube Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
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IPB50R140CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3 Mounting: SMD Polarisation: unipolar Case: PG-TO263-3 Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 3.1A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 25W |
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IPB50R199CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3 Mounting: SMD Polarisation: unipolar Case: PG-TO263-3 Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 17A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W |
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IPP50R140CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 192W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA50R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPI50R350CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 89W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of channel: enhanced |
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IPP50R250CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 482 шт: термін постачання 21-30 дні (днів) |
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IPA50R500CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 500V Drain current: 3.4A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Technology: CoolMOS™ |
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IPN50R2K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.3A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhanced |
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IPN50R800CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 12.4nC Kind of channel: enhanced |
на замовлення 2906 шт: термін постачання 21-30 дні (днів) |
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IPN50R950CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.2A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced |
на замовлення 2950 шт: термін постачання 21-30 дні (днів) |
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IPA50R800CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP Kind of package: tube Drain-source voltage: 500V Drain current: 2.6A On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 26.4W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
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BSC057N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 114W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7452TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7458TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7463TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7469TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 9A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79 Mounting: SMD Case: SC79 Max. off-state voltage: 30V Type of diode: Schottky rectifying Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A |
на замовлення 2795 шт: термін постачання 21-30 дні (днів) |
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1EDS5663HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Output current: -8...4A Topology: single transistor Integrated circuit features: galvanically isolated Number of channels: 1 Kind of integrated circuit: gate driver; high-side Supply voltage: 3...3.5V; 6.5...20V Voltage class: 650V Type of integrated circuit: driver |
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IPA040N08NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 80V Type of transistor: N-MOSFET Case: TO220FP On-state resistance: 4mΩ Gate-source voltage: ±20V Pulsed drain current: 300A Power dissipation: 39W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 53A Kind of channel: enhanced |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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IPA041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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XMC4504F144F512ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH Operating temperature: -40...85°C Supply voltage: 3.3V DC Case: PG-LQFP-144 Number of inputs/outputs: 91 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 128kB SRAM; 512kB FLASH Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB Type of integrated circuit: ARM microcontroller |
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XMC4504F144K512ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH Operating temperature: -40...125°C Supply voltage: 3.3V DC Case: PG-LQFP-144 Number of inputs/outputs: 91 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 128kB SRAM; 512kB FLASH Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB Type of integrated circuit: ARM microcontroller |
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| T1901N80TOHXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA Case: BG-T15035K-1 Mounting: Press-Pack Kind of package: in-tray Max. off-state voltage: 8kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 350mA Max. forward impulse current: 67kA Load current: 2.1kA Max. load current: 3.3kA Type of thyristor: hockey-puck |
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IPP60R385CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| 2ED300C17SROHSBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Type of module: gate driver board Topology: IGBT half-bridge Case: AG-EICE Application: for medium and high power application Mounting: PCB Operating temperature: -25...85°C Technology: EiceDRIVER™; SiC Voltage class: 1.7kV Supply voltage: 14...16V DC Frequency: 60kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: galvanically isolated; integrated DC-DC converter |
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| 2ED300C17STROHSBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV Type of module: gate driver board Topology: IGBT half-bridge Case: AG-EICE Application: for medium and high power application Mounting: PCB Operating temperature: -40...85°C Technology: EiceDRIVER™ Voltage class: 1.7kV Supply voltage: 14...16V DC Frequency: 60kHz Output current: 30A Kind of output: IGBT driver Integrated circuit features: galvanically isolated; integrated DC-DC converter |
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2ED2304S06FXLSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; EiceDRIVER™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...17.5V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: tube Voltage class: 650V Protection: undervoltage UVP |
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AUIRFS3107-7P | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 190A Power dissipation: 370W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
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ISP772T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Industrial PROFET |
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BTS5012SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 12mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
на замовлення 1075 шт: термін постачання 21-30 дні (днів) |
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IRLH5030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 100V Drain current: 13A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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BSP60H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.5W; SOT223 Mounting: SMD Case: SOT223 Power dissipation: 1.5W Collector current: 1A Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Frequency: 200MHz Collector-emitter voltage: 45V |
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| FS75R12W2T4B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-EASY2B-2 Power dissipation: 375W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A |
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IDH08G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2 Type of diode: Schottky rectifying Mounting: THT Case: PG-TO220-2 Kind of package: tube Semiconductor structure: single diode Leakage current: 1.6µA Max. forward impulse current: 60A Max. forward voltage: 1.8V Power dissipation: 76W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 8A |
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BSC054N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 40V Drain current: 81A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
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IRFR3711TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR3711ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 93A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 93A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPA029N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 348A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA029N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 84A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRFP7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 404A Power dissipation: 366W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IRFP7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 172A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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IRFP7718PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC Mounting: THT Case: TO247AC Kind of package: tube Power dissipation: 517W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 75V Drain current: 355A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET |
на замовлення 335 шт: термін постачання 21-30 дні (днів) |
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BTS5030-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-8 On-state resistance: 60mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Power dissipation: 1.9W |
на замовлення 1129 шт: термін постачання 21-30 дні (днів) |
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BTS5030-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14 On-state resistance: 60mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Power dissipation: 2.1W |
товар відсутній |
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| BTS50451EJAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-8-EP On-state resistance: 45mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V Operating temperature: -40...150°C Power dissipation: 1.6W |
товар відсутній |
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BTS5014SDAAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 14mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
товар відсутній |
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BTS5016-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 28mΩ Supply voltage: 5...28V DC Technology: PROFET™+ 12V |
товар відсутній |
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BTS5180-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 0.33Ω Supply voltage: 8...18V DC Technology: PROFET™+ 12V |
на замовлення 1609 шт: термін постачання 21-30 дні (днів) |
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BTS6133D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Output current: 33A Case: TO252-5 Mounting: SMD Number of channels: 1 On-state resistance: 8mΩ Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Supply voltage: 5.5...38V DC |
товар відсутній |
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BTS6142D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 10mΩ Supply voltage: 5.5...38V DC Technology: High Current PROFET |
товар відсутній |
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BTS6143D | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5 Mounting: SMD Output current: 33A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Case: DPAK5 Supply voltage: 5.5...38V DC |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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IPN80R2K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Power dissipation: 6.3W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
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IPN80R3K3P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 6.1W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
| ETD480N22P60HPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 480A; BG-PB60ECO-1; Ufmax: 1.83V
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Max. load current: 700A
Type of module: diode-thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 480A; BG-PB60ECO-1; Ufmax: 1.83V
Case: BG-PB60ECO-1
Gate current: 250mA
Max. forward voltage: 1.83V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 480A
Max. load current: 700A
Type of module: diode-thyristor
Semiconductor structure: double series
Max. forward impulse current: 14.7kA
товар відсутній
| ICL8800XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PG-DSO-8; -125÷250mA; Ch: 1; 8.1÷23V
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED controller; PFC controller; SMPS controller
Case: PG-DSO-8
Output current: -125...250mA
Number of channels: 1
Integrated circuit features: funkcja Soft-Start
Mounting: SMD
Operating voltage: 8.1...23V
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товар відсутній
| TT215N20KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 215A; BG-PB50-1; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 215A; BG-PB50-1; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IRFR812TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 14.4A; 78W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 500V
Drain current: 2.3A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 14.4A
товар відсутній
| IPA50R140CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 357.28 грн |
| 3+ | 288.2 грн |
| 9+ | 272.23 грн |
| IPA50R190CEXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA50R199CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
товар відсутній
| IPB50R140CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
Case: PG-TO263-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
Case: PG-TO263-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 3.1A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
товар відсутній
| IPB50R199CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
Case: PG-TO263-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
Case: PG-TO263-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
товар відсутній
| IPP50R140CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA50R250CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPI50R350CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP50R250CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.38 грн |
| 8+ | 119.78 грн |
| 20+ | 113.25 грн |
| IPA50R500CEXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 3.4A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
товар відсутній
| IPN50R2K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
товар відсутній
| IPN50R800CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of channel: enhanced
на замовлення 2906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.03 грн |
| 10+ | 37.17 грн |
| 25+ | 33.54 грн |
| 26+ | 32.38 грн |
| 72+ | 30.64 грн |
| 500+ | 29.4 грн |
| IPN50R950CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 25+ | 22.14 грн |
| 50+ | 16.99 грн |
| 136+ | 16.04 грн |
| IPA50R800CEXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 2.6A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 26.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 2.6A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Power dissipation: 26.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
товар відсутній
| BSC057N08NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7452TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7458TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7463TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7469TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BAS3005B02VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
на замовлення 2795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.32 грн |
| 45+ | 8.42 грн |
| 100+ | 7.48 грн |
| 135+ | 6.32 грн |
| 365+ | 6.03 грн |
| 1EDS5663HXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Type of integrated circuit: driver
товар відсутній
| IPA040N08NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: TO220FP
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 300A
Power dissipation: 39W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 53A
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Case: TO220FP
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 300A
Power dissipation: 39W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 53A
Kind of channel: enhanced
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.4 грн |
| 9+ | 95.83 грн |
| 24+ | 90.74 грн |
| IPA041N04NGXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| XMC4504F144F512ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
товар відсутній
| XMC4504F144K512ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
товар відсутній
| T1901N80TOHXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
товар відсутній
| IPP60R385CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 2ED300C17SROHSBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Technology: EiceDRIVER™; SiC
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC-DC converter
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -25...85°C
Technology: EiceDRIVER™; SiC
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC-DC converter
товар відсутній
| 2ED300C17STROHSBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC-DC converter
Category: IGBT modules
Description: Module: gate driver board; IGBT half-bridge; AG-EICE; PCB; 1.7kV
Type of module: gate driver board
Topology: IGBT half-bridge
Case: AG-EICE
Application: for medium and high power application
Mounting: PCB
Operating temperature: -40...85°C
Technology: EiceDRIVER™
Voltage class: 1.7kV
Supply voltage: 14...16V DC
Frequency: 60kHz
Output current: 30A
Kind of output: IGBT driver
Integrated circuit features: galvanically isolated; integrated DC-DC converter
товар відсутній
| 2ED2304S06FXLSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; EiceDRIVER™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: tube
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; EiceDRIVER™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: tube
Voltage class: 650V
Protection: undervoltage UVP
товар відсутній
| AUIRFS3107-7P |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 190A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 190A
Power dissipation: 370W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| ISP772T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Industrial PROFET
товар відсутній
| BTS5012SDA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.5 грн |
| 3+ | 182.21 грн |
| 7+ | 127.77 грн |
| 19+ | 120.51 грн |
| IRLH5030TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 100V
Drain current: 13A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| BSP60H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Mounting: SMD
Case: SOT223
Power dissipation: 1.5W
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Collector-emitter voltage: 45V
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.5W; SOT223
Mounting: SMD
Case: SOT223
Power dissipation: 1.5W
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Collector-emitter voltage: 45V
товар відсутній
| FS75R12W2T4B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-EASY2B-2
Power dissipation: 375W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
товар відсутній
| IDH08G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO220-2
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.6µA
Max. forward impulse current: 60A
Max. forward voltage: 1.8V
Power dissipation: 76W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 8A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 76W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO220-2
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.6µA
Max. forward impulse current: 60A
Max. forward voltage: 1.8V
Power dissipation: 76W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 8A
товар відсутній
| BSC054N04NSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 81A
On-state resistance: 5.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IRFR3711TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFR3711ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 93A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 93A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 93A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 93A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPA029N06NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 348A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 348A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA029N06NXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP7430PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.9 грн |
| IRFP7537PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.45 грн |
| 5+ | 162.61 грн |
| 7+ | 124.86 грн |
| 19+ | 118.33 грн |
| IRFP7718PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 517W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 75V
Drain current: 355A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 355A; 517W; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Power dissipation: 517W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 75V
Drain current: 355A
On-state resistance: 1.45mΩ
Type of transistor: N-MOSFET
на замовлення 335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.51 грн |
| 3+ | 299.09 грн |
| 8+ | 283.12 грн |
| BTS5030-1EJA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.9W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 1.9W
на замовлення 1129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.9 грн |
| 5+ | 111.07 грн |
| 10+ | 88.57 грн |
| 26+ | 83.48 грн |
| 500+ | 82.03 грн |
| BTS5030-2EKA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
товар відсутній
| BTS50451EJAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8-EP
On-state resistance: 45mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Power dissipation: 1.6W
товар відсутній
| BTS5014SDAAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 14mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
товар відсутній
| BTS5016-2EKA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 28mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
товар відсутній
| BTS5180-2EKA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
на замовлення 1609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.98 грн |
| 5+ | 85.66 грн |
| 12+ | 74.05 грн |
| 31+ | 70.42 грн |
| BTS6133D |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 8mΩ
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...38V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 8mΩ
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...38V DC
товар відсутній
| BTS6142D |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 10mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 10mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
товар відсутній
| BTS6143D | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Mounting: SMD
Output current: 33A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: DPAK5
Supply voltage: 5.5...38V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Mounting: SMD
Output current: 33A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: DPAK5
Supply voltage: 5.5...38V DC
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.12 грн |
| 5+ | 144.46 грн |
| 7+ | 125.59 грн |
| 19+ | 119.06 грн |
| IPN80R2K4P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 6.3W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 6.3W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPN80R3K3P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 6.1W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 6.1W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній