Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136423) > Сторінка 2262 з 2274
| Фото | Назва | Виробник | Інформація |
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IPN80R4K5P7ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 6W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 4nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 2279 шт: термін постачання 21-30 дні (днів) |
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IPN80R600P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.5A Power dissipation: 7.4W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPN80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223 Mounting: SMD Drain-source voltage: 800V Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 7.2W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: CoolMOS™ P7 Case: PG-SOT223 Kind of channel: enhanced Gate-source voltage: ±20V |
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IRGP4263DPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 90A Power dissipation: 325W Case: TO247-3 Mounting: THT Kind of package: tube |
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IRS2183SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 240ns |
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IRF7904TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; 1.4W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.6A Power dissipation: 1.4W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB054N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3 Kind of channel: enhanced On-state resistance: 5.4mΩ Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain current: 80A Power dissipation: 150W Polarisation: unipolar Drain-source voltage: 80V Case: PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 |
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AUIR3240STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Voltage class: 40V Supply voltage: 4...36V DC Output current: 0.3A Type of integrated circuit: driver Number of channels: 1 |
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TT400N26KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.6kV Load current: 400A Case: BG-PB60-1 Max. forward voltage: 1.88V Max. forward impulse current: 13kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPP60R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R190E6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| TT280N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| TT280N18SOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| TT285N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 285A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 10kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPI60R099CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO262-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhanced |
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IPP60R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R099CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 255W Case: PG-TO220-3-1 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| TZ630N24KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2.2kV Load current: 630A Case: BG-PB70-1 Max. forward voltage: 2.18V Max. forward impulse current: 25.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| T3160N16TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 7kA Load current: 3.16kA Gate current: 250mA Case: BG-T11126K-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 63kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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| T3160N18TOFVTXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA Max. off-state voltage: 1.8kV Load current: 3.16kA Max. load current: 7kA Case: BG-T11126K-1 Max. forward impulse current: 63kA Gate current: 250mA Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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| TD160N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 160A; BG-PB34SB-1; Ufmax: 1.82V Max. forward impulse current: 5.2kA Case: BG-PB34SB-1 Max. off-state voltage: 1.6kV Max. load current: 160A Max. forward voltage: 1.82V Load current: 160A Semiconductor structure: double series Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor |
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| TD160N18SOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Max. load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| TT160N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 160A; BG-PB34SB-1; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB34SB-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.82V Load current: 160A Semiconductor structure: double series Gate current: 145mA Max. forward impulse current: 5.2kA |
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| TT160N18SOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| TZ860N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 860A; BG-PB70AT-1 Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 860A Case: BG-PB70AT-1 Max. forward voltage: 1.38V Max. forward impulse current: 46kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRF8721TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP65R045C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Power dissipation: 227W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRFSL3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BSC035N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Power dissipation: 156W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 100A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET |
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AUIRFS4310 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 170nC Kind of channel: enhanced |
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IPN70R1K0CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Technology: CoolMOS™ CE Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 4.7A On-state resistance: 1Ω Drain-source voltage: 700V Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Gate charge: 15.2nC |
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IPN70R1K5CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.4A Power dissipation: 5W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced |
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TLE4299GMV33XUMA2 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; PG-DSO-14; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V DC Output current: 0.15A Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 4.4...45V DC |
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IRFH7914TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6 Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 Drain-source voltage: 30V Drain current: 15A Type of transistor: N-MOSFET |
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IRLS4030TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| BSC022N04LS6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 79W Case: PG-TDSON-8 FL On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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BSC025N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced |
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BSC026N02KSGAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±12V Polarisation: unipolar Power dissipation: 78W Type of transistor: N-MOSFET On-state resistance: 2.6mΩ Drain current: 100A Drain-source voltage: 20V |
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BSC026N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhanced |
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BSC027N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhanced |
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| BSC027N06LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Technology: OptiMOS® Drain current: 84A Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Polarisation: unipolar |
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BSC028N06LS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
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BSC028N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
на замовлення 4359 шт: термін постачання 21-30 дні (днів) |
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| ILD8150XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; LED controller; PG-DSO-8-EP; 1.5A; Ch: 1; 8÷80V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED controller Case: PG-DSO-8-EP Output current: 1.5A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 8...80V |
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BUZ30AH3045AATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3 Mounting: SMD Kind of channel: enhanced Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 0.13Ω Power dissipation: 125W Polarisation: unipolar Technology: SIPMOS™ Drain current: 21A |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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BSC035N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 69W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 92A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET |
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BSZ025N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Technology: OptiMOS™ Drain-source voltage: 40V Drain current: 40A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC042NE7NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8 Drain-source voltage: 75V Drain current: 100A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
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IRF7495TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.3A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPD65R380E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced |
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IPD65R380E6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BF888H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4V Collector current: 30mA Power dissipation: 0.16W Case: SOT343 Current gain: 250 Mounting: SMD Kind of package: reel; tape Frequency: 47GHz |
на замовлення 2546 шт: термін постачання 21-30 дні (днів) |
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BAS7007WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT343; 250mW Mounting: SMD Case: SOT343 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double independent Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
товар відсутній |
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BFP520H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 2.5V Collector current: 40mA Power dissipation: 0.1W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 45GHz |
на замовлення 2266 шт: термін постачання 21-30 дні (днів) |
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BSP742T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.26Ω Technology: Classic PROFET Output voltage: 40V |
на замовлення 1924 шт: термін постачання 21-30 дні (днів) |
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| BTF3050EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TDSO-8-31 On-state resistance: 45mΩ Kind of package: reel; tape Supply voltage: 3...5.5V DC Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Power dissipation: 1.6W Turn-on time: 1.35µs Turn-off time: 2µs |
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| BTF3080EJXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31 Mounting: SMD Case: PG-TDSO-8-31 Operating temperature: -40...150°C On-state resistance: 71mΩ Turn-on time: 1.35µs Turn-off time: 2µs Output voltage: 40V Output current: 3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Power dissipation: 1.44W Kind of package: reel; tape Technology: HITFET® Kind of integrated circuit: low-side Supply voltage: 3...5.5V DC |
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| F475R12KS4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x2; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO2-6 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 500W Technology: EconoPACK™ 2 Mechanical mounting: screw |
товар відсутній |
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FS50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: Inverter Case: AG-ECONO2-6 Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 280W Technology: EconoPACK™ 2 Mechanical mounting: screw |
товар відсутній |
| IPN80R4K5P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.38 грн |
| 9+ | 40.51 грн |
| 20+ | 36.22 грн |
| 29+ | 29.65 грн |
| 78+ | 28.03 грн |
| IPN80R600P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 7.4W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 7.4W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPN80R750P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223
Mounting: SMD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223
Mounting: SMD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 17nC
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IRGP4263DPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 90A
Power dissipation: 325W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 90A
Power dissipation: 325W
Case: TO247-3
Mounting: THT
Kind of package: tube
товар відсутній
| IRS2183SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
товар відсутній
| IRF7904TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.6A
Power dissipation: 1.4W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.6A; 1.4W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.6A
Power dissipation: 1.4W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB054N08N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Kind of channel: enhanced
On-state resistance: 5.4mΩ
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain current: 80A
Power dissipation: 150W
Polarisation: unipolar
Drain-source voltage: 80V
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Kind of channel: enhanced
On-state resistance: 5.4mΩ
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain current: 80A
Power dissipation: 150W
Polarisation: unipolar
Drain-source voltage: 80V
Case: PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
товар відсутній
| AUIR3240STR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Supply voltage: 4...36V DC
Output current: 0.3A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Supply voltage: 4...36V DC
Output current: 0.3A
Type of integrated circuit: driver
Number of channels: 1
товар відсутній
| TT400N26KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPP60R190E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPW60R190E6FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TT280N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT280N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT285N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IPI60R099CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP60R099C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R099CPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 534.75 грн |
| 2+ | 423.96 грн |
| 6+ | 400.72 грн |
| 10+ | 389.84 грн |
| IPP60R099P6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TZ630N24KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| T3160N16TOFVTXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Case: BG-T11126K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 63kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
| T3160N18TOFVTXPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
товар відсутній
| TD160N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 160A
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 160A
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
товар відсутній
| TD160N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TT160N16SOFHPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; BG-PB34SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Max. forward impulse current: 5.2kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; BG-PB34SB-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Max. forward impulse current: 5.2kA
товар відсутній
| TT160N18SOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| TZ860N16KOFHPSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 860A; BG-PB70AT-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 860A
Case: BG-PB70AT-1
Max. forward voltage: 1.38V
Max. forward impulse current: 46kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 860A; BG-PB70AT-1
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 860A
Case: BG-PB70AT-1
Max. forward voltage: 1.38V
Max. forward impulse current: 46kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IRF8721TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPP65R045C7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFSL3206PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BSC035N10NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Power dissipation: 156W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 100A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
товар відсутній
| AUIRFS4310 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhanced
товар відсутній
| IPN70R1K0CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 4.7A
On-state resistance: 1Ω
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Case: PG-SOT223
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 4.7A
On-state resistance: 1Ω
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
товар відсутній
| IPN70R1K5CEATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.4A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
товар відсутній
| TLE4299GMV33XUMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; PG-DSO-14; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V DC
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.4...45V DC
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; PG-DSO-14; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V DC
Output current: 0.15A
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.4...45V DC
товар відсутній
| IRFH7914TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 15A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 3.1W; PQFN5X6
Mounting: SMD
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 15A
Type of transistor: N-MOSFET
товар відсутній
| IRLS4030TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| BSC022N04LS6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BSC025N03LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC026N02KSGAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 78W
Type of transistor: N-MOSFET
On-state resistance: 2.6mΩ
Drain current: 100A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Polarisation: unipolar
Power dissipation: 78W
Type of transistor: N-MOSFET
On-state resistance: 2.6mΩ
Drain current: 100A
Drain-source voltage: 20V
товар відсутній
| BSC026N08NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC027N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC027N06LS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain current: 84A
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 83W
On-state resistance: 2.7mΩ
Type of transistor: N-MOSFET
Technology: OptiMOS®
Drain current: 84A
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Polarisation: unipolar
товар відсутній
| BSC028N06LS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC028N06NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 4359 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.99 грн |
| 10+ | 92.2 грн |
| 26+ | 87.11 грн |
| 250+ | 85.66 грн |
| 1000+ | 83.48 грн |
| ILD8150XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8-EP; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8-EP
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8-EP; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8-EP
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
товар відсутній
| BUZ30AH3045AATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 0.13Ω
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; 125W; PG-TO263-3
Mounting: SMD
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 0.13Ω
Power dissipation: 125W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21A
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.29 грн |
| 8+ | 49.36 грн |
| BSC035N04LSGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 92A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 69W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 92A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
товар відсутній
| BSZ025N04LSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Technology: OptiMOS™
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Technology: OptiMOS™
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BSC042NE7NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
товар відсутній
| IRF7495TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD65R380E6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPD65R380E6BTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BF888H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 30mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 47GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 30mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 47GHz
на замовлення 2546 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 23+ | 15.97 грн |
| 26+ | 14.08 грн |
| 70+ | 12.05 грн |
| 192+ | 11.4 грн |
| BAS7007WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT343; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT343; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
товар відсутній
| BFP520H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
на замовлення 2266 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 32.05 грн |
| 18+ | 20.69 грн |
| 50+ | 15.24 грн |
| 76+ | 11.25 грн |
| 209+ | 10.6 грн |
| 500+ | 10.24 грн |
| BSP742T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 1924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.92 грн |
| 5+ | 94.37 грн |
| 12+ | 72.6 грн |
| 32+ | 68.97 грн |
| BTF3050EJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1.6W
Turn-on time: 1.35µs
Turn-off time: 2µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TDSO-8-31
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Power dissipation: 1.6W
Turn-on time: 1.35µs
Turn-off time: 2µs
товар відсутній
| BTF3080EJXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Operating temperature: -40...150°C
On-state resistance: 71mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.44W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Case: PG-TDSO-8-31
Operating temperature: -40...150°C
On-state resistance: 71mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1.44W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Supply voltage: 3...5.5V DC
товар відсутній
| F475R12KS4BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO2-6
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO2-6
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 500W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній
| FS50R12KT3BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: Inverter
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: Inverter
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 280W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній