Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136437) > Сторінка 2256 з 2274
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IRFHM830TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Power dissipation: 2.7W Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Polarisation: unipolar |
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IRF7807VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 8.3A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD |
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IRF7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 11A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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IPP072N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3 Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 80A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: tube Case: PG-TO220-3 On-state resistance: 7.2mΩ Gate-source voltage: ±20V Mounting: THT |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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IRFR7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK Power dissipation: 98W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Drain-source voltage: 40V Drain current: 56A Type of transistor: N-MOSFET |
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BSB028N06NN3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W Drain-source voltage: 60V Drain current: 90A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 |
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IPB600N25N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 25A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of channel: enhanced |
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IPB60R060P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel Kind of channel: enhanced |
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IPB60R080P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK Mounting: SMD Kind of package: reel Case: D2PAK Power dissipation: 129W Technology: CoolMOS™ P7 Drain current: 23A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 80mΩ Gate-source voltage: ±20V Gate charge: 51nC Polarisation: unipolar |
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IPB60R099C6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced |
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IPB60R099C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced |
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IPB60R099C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
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IPB60R099P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel Kind of channel: enhanced |
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IPB60R125C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
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IPB60R165CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 192W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of channel: enhanced |
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IPB60R180C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 68W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 24nC Kind of channel: enhanced |
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IPB60R180P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhanced |
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IPB60R199CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 139W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhanced |
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IPB60R250CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2 Mounting: SMD Case: PG-TO263-3-2 Power dissipation: 104W Technology: CoolMOS™ CP Drain current: 12A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 0.25Ω Gate-source voltage: ±20V Polarisation: unipolar |
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IPB60R299CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Power dissipation: 96W Technology: CoolMOS™ CP Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 0.299Ω Gate-source voltage: ±20V Polarisation: unipolar |
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IPB60R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Power dissipation: 83W Technology: CoolMOS™ C6 Drain current: 10.6A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 0.38Ω Gate-source voltage: ±20V Polarisation: unipolar |
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IPB60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced |
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BTS3080EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.16Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 218µs |
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BSC265N10LSFGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 26.5mΩ Mounting: SMD Kind of channel: enhanced |
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IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IRFS4510TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Pulsed drain current: 250A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Kind of channel: enhanced |
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IRFS4610TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFS4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IRFS4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Pulsed drain current: 100A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 77.5mΩ Mounting: SMD Kind of channel: enhanced |
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| IRFS7434TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 229A Pulsed drain current: 1.3kA Power dissipation: 245W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced |
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced |
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IRFS7534TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Trade name: StrongIRFET |
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BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.11A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 2170 шт: термін постачання 21-30 дні (днів) |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Mounting: SMD Case: SC59 Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -100V Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: P-MOSFET On-state resistance: 2.2Ω Drain current: -290mA |
на замовлення 1879 шт: термін постачання 21-30 дні (днів) |
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IPI65R150CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3 Mounting: THT Case: PG-TO262-3 Drain-source voltage: 650V Drain current: 22.4A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 195.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPP65R150CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.4A Power dissipation: 195.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IAUS300N10S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 1315A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 216nC Kind of package: reel; tape Kind of channel: enhanced |
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| FD1000R33HE3KBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV Topology: buck-boost chopper Case: AG-IHVB190 Application: frequency changer; Inverter Power dissipation: 11.5kW Collector current: 1kA Pulsed collector current: 2kA Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Max. off-state voltage: 3.3kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| IAUS200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W Mounting: SMD Case: PG-HSOG-8 On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 200W Polarisation: unipolar Kind of package: reel; tape Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 800A Drain-source voltage: 80V Drain current: 148A |
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| IAUS240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 173A Pulsed drain current: 960A Power dissipation: 230W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| IAUS300N08S5N011ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 52A Pulsed drain current: 1505A Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUS300N08S5N011TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 1450A Power dissipation: 375W Case: PG-HDSOP-16 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 231nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUS300N08S5N012ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUS300N08S5N014ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HSOG-8 On-state resistance: 1.4mΩ Pulsed drain current: 1.2kA Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 230A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET |
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| IAUS300N08S5N014TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W Mounting: SMD Gate-source voltage: ±20V Kind of package: reel; tape Case: PG-HDSOP-16 On-state resistance: 2.1mΩ Pulsed drain current: 1186A Power dissipation: 300W Gate charge: 187nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 108A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET |
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IFX1050G | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 70mA |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Mounting: SMD Case: PQFN5X6 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 3.6W Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 100V Drain current: 11A |
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BTS3205GXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 520mA; Ch: 1; N-Channel; SMD; PG-DSO-8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.52A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-8 On-state resistance: 0.35Ω Kind of package: reel Technology: HITFET® Output voltage: 42V Application: automotive industry |
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IDH20G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 108W; PG-TO220-2 Max. off-state voltage: 650V Max. forward voltage: 1.25V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 79A Leakage current: 153µA Power dissipation: 108W Kind of package: tube Type of diode: Schottky rectifying Case: PG-TO220-2 Technology: CoolSiC™ 6G; SiC Heatsink thickness: 1.17...1.37mm Mounting: THT |
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XMC4504F100F512ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH Operating temperature: -40...125°C Supply voltage: 3.3V DC Case: PG-LQFP-100 Number of inputs/outputs: 55 Number of 16bit timers: 26 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4500 Memory: 128kB SRAM; 512kB FLASH Interface: GPIO; I2C; I2S; LIN; SPI; UART Type of integrated circuit: ARM microcontroller |
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| IPDD60R080G7XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A Polarisation: unipolar Kind of package: reel; tape Power dissipation: 174W Type of transistor: N-MOSFET On-state resistance: 80mΩ Drain current: 29A Gate charge: 42nC Drain-source voltage: 600V Technology: CoolMOS™ G7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HDSOP-10-1 Pulsed drain current: 83A Mounting: SMD |
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| IAUC26N10S5L245ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Pulsed drain current: 104A Power dissipation: 40W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 37.8mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
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IPP126N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3 Polarisation: unipolar Power dissipation: 94W Technology: OptiMOS™ 3 Drain current: 58A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 12.6mΩ Mounting: THT |
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IRFHM9331TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Type of transistor: P-MOSFET Drain current: -9A Drain-source voltage: -30V Technology: HEXFET® Kind of channel: enhanced |
на замовлення 3895 шт: термін постачання 21-30 дні (днів) |
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IPN60R600P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| ETD420N22P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 427A; BG-PB60ECO-1; Ufmax: 1.94V Type of module: diode-thyristor Semiconductor structure: double series Case: BG-PB60ECO-1 Max. forward impulse current: 13.4kA Gate current: 250mA Max. forward voltage: 1.94V Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: FASTON connectors; screw Load current: 427A Max. load current: 700A |
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IRF7457TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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SGP07N120 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor Mounting: THT Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 125W Type of transistor: IGBT Semiconductor structure: single transistor Case: TO220AB Collector current: 16.5A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| IRFHM830TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
| IRF7807VTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
товар відсутній
| IRF7807ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
товар відсутній
| BSS223PWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.42 грн |
| 31+ | 11.83 грн |
| 38+ | 9.55 грн |
| 50+ | 7.85 грн |
| 100+ | 6.45 грн |
| 227+ | 3.77 грн |
| 622+ | 3.56 грн |
| IPP072N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Mounting: THT
на замовлення 140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.4 грн |
| 9+ | 94.79 грн |
| 24+ | 89.62 грн |
| IRFR7446TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Power dissipation: 98W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 40V
Drain current: 56A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 98W; DPAK
Power dissipation: 98W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 40V
Drain current: 56A
Type of transistor: N-MOSFET
товар відсутній
| BSB028N06NN3GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ M; MG-WDSON-2
товар відсутній
| IPB600N25N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R060P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB60R080P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Mounting: SMD
Kind of package: reel
Case: D2PAK
Power dissipation: 129W
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Gate charge: 51nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Mounting: SMD
Kind of package: reel
Case: D2PAK
Power dissipation: 129W
Technology: CoolMOS™ P7
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Gate charge: 51nC
Polarisation: unipolar
товар відсутній
| IPB60R099C6 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R099C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R099C7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
товар відсутній
| IPB60R099P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB60R125C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R165CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R180C7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
товар відсутній
| IPB60R180P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB60R199CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB60R250CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Technology: CoolMOS™ CP
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Technology: CoolMOS™ CP
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| IPB60R299CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| IPB60R380C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 83W
Technology: CoolMOS™ C6
Drain current: 10.6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.38Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 83W
Technology: CoolMOS™ C6
Drain current: 10.6A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.38Ω
Gate-source voltage: ±20V
Polarisation: unipolar
товар відсутній
| IPB60R385CPATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BTS3080EJ |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
товар відсутній
| BSC265N10LSFGATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFS4310TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS4310ZTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS4510TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 250A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFS4610TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS4615TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS4620TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFS7434TRL7PP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFS7437TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRFS7534TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
товар відсутній
| BSR92PH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.65 грн |
| 25+ | 18.66 грн |
| 62+ | 13.53 грн |
| 169+ | 12.79 грн |
| BSR316PH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Mounting: SMD
Case: SC59
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -100V
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
On-state resistance: 2.2Ω
Drain current: -290mA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Mounting: SMD
Case: SC59
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -100V
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
On-state resistance: 2.2Ω
Drain current: -290mA
на замовлення 1879 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.4 грн |
| 50+ | 23.16 грн |
| 61+ | 13.79 грн |
| 167+ | 13.07 грн |
| IPI65R150CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPP65R150CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 195.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IAUS300N10S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 1315A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FD1000R33HE3KBPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Topology: buck-boost chopper
Case: AG-IHVB190
Application: frequency changer; Inverter
Power dissipation: 11.5kW
Collector current: 1kA
Pulsed collector current: 2kA
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 3.3kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Topology: buck-boost chopper
Case: AG-IHVB190
Application: frequency changer; Inverter
Power dissipation: 11.5kW
Collector current: 1kA
Pulsed collector current: 2kA
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Max. off-state voltage: 3.3kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IAUS200N08S5N023ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Mounting: SMD
Case: PG-HSOG-8
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 800A
Drain-source voltage: 80V
Drain current: 148A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 148A; Idm: 800A; 200W
Mounting: SMD
Case: PG-HSOG-8
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Kind of package: reel; tape
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 800A
Drain-source voltage: 80V
Drain current: 148A
товар відсутній
| IAUS240N08S5N019ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUS300N08S5N011ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 1505A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 1505A
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUS300N08S5N011TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 1450A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 1450A
Power dissipation: 375W
Case: PG-HDSOP-16
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 231nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUS300N08S5N012ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; Idm: 1.2kA; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUS300N08S5N014ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 230A; Idm: 1.2kA; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOG-8
On-state resistance: 1.4mΩ
Pulsed drain current: 1.2kA
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 230A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
товар відсутній
| IAUS300N08S5N014TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 1186A; 300W
Mounting: SMD
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HDSOP-16
On-state resistance: 2.1mΩ
Pulsed drain current: 1186A
Power dissipation: 300W
Gate charge: 187nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
товар відсутній
| IFX1050G |
|
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
товар відсутній
| IRFH5110TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
товар відсутній
| BTS3205GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 520mA; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.52A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 0.35Ω
Kind of package: reel
Technology: HITFET®
Output voltage: 42V
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 520mA; Ch: 1; N-Channel; SMD; PG-DSO-8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.52A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-8
On-state resistance: 0.35Ω
Kind of package: reel
Technology: HITFET®
Output voltage: 42V
Application: automotive industry
товар відсутній
| IDH20G65C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 108W; PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 6G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 108W; PG-TO220-2
Max. off-state voltage: 650V
Max. forward voltage: 1.25V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Type of diode: Schottky rectifying
Case: PG-TO220-2
Technology: CoolSiC™ 6G; SiC
Heatsink thickness: 1.17...1.37mm
Mounting: THT
товар відсутній
| XMC4504F100F512ACXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 128kB SRAM; 512kB FLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Type of integrated circuit: ARM microcontroller
товар відсутній
| IPDD60R080G7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 174W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 29A
Gate charge: 42nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 83A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Polarisation: unipolar
Kind of package: reel; tape
Power dissipation: 174W
Type of transistor: N-MOSFET
On-state resistance: 80mΩ
Drain current: 29A
Gate charge: 42nC
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HDSOP-10-1
Pulsed drain current: 83A
Mounting: SMD
товар відсутній
| IAUC26N10S5L245ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPP126N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Polarisation: unipolar
Power dissipation: 94W
Technology: OptiMOS™ 3
Drain current: 58A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 12.6mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Polarisation: unipolar
Power dissipation: 94W
Technology: OptiMOS™ 3
Drain current: 58A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 12.6mΩ
Mounting: THT
товар відсутній
| IRFHM9331TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -9A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Type of transistor: P-MOSFET
Drain current: -9A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
на замовлення 3895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.82 грн |
| 25+ | 21.85 грн |
| 47+ | 18.22 грн |
| 129+ | 17.21 грн |
| IPN60R600P7SATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| ETD420N22P60HPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 427A; BG-PB60ECO-1; Ufmax: 1.94V
Type of module: diode-thyristor
Semiconductor structure: double series
Case: BG-PB60ECO-1
Max. forward impulse current: 13.4kA
Gate current: 250mA
Max. forward voltage: 1.94V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 427A
Max. load current: 700A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 427A; BG-PB60ECO-1; Ufmax: 1.94V
Type of module: diode-thyristor
Semiconductor structure: double series
Case: BG-PB60ECO-1
Max. forward impulse current: 13.4kA
Gate current: 250mA
Max. forward voltage: 1.94V
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: FASTON connectors; screw
Load current: 427A
Max. load current: 700A
товар відсутній
| IRF7457TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| SGP07N120 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 125W
Type of transistor: IGBT
Semiconductor structure: single transistor
Case: TO220AB
Collector current: 16.5A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 125W
Type of transistor: IGBT
Semiconductor structure: single transistor
Case: TO220AB
Collector current: 16.5A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.9 грн |