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TLE49612MXTSA1 TLE49612MXTSA1 Infineon Technologies Infineon-TLE4961_2M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc965173b6517 Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 7.3mT Trip, -7.3mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
6+55.79 грн
10+ 40.73 грн
25+ 35.11 грн
50+ 31.79 грн
100+ 27.07 грн
500+ 23.54 грн
1000+ 20.26 грн
Мінімальне замовлення: 6
TLE49614MXTSA1 TLE49614MXTSA1 Infineon Technologies Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, -13.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2717 шт:
термін постачання 21-31 дні (днів)
6+55.03 грн
10+ 40.36 грн
25+ 34.76 грн
50+ 31.48 грн
100+ 26.81 грн
500+ 23.31 грн
1000+ 20.06 грн
Мінімальне замовлення: 6
TLE49681MXTSA1 TLE49681MXTSA1 Infineon Technologies Infineon-TLE4968_1M-DS-v01_00-en.pdf?fileId=db3a304340155f3d01402f99caaa27d1 Description: MAG SWITCH BIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23264 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLI49611MXTSA1 TLI49611MXTSA1 Infineon Technologies Infineon-TLI4961_1-DS-v01_01-en.pdf?fileId=db3a304338e5bb6e0138e7ae76540244 Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5455 шт:
термін постачання 21-31 дні (днів)
7+45.23 грн
10+ 33.47 грн
25+ 28.81 грн
50+ 26.08 грн
100+ 22.21 грн
500+ 19.32 грн
1000+ 16.62 грн
Мінімальне замовлення: 7
TLE49641MXTSA1 TLE49641MXTSA1 Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 20040 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49643MXTSA1 TLE49643MXTSA1 Infineon Technologies Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9 Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 16.6mT Trip, 6.1mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 22580 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49644MXTMA1 TLE49644MXTMA1 Infineon Technologies Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005 Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.16 грн
25+ 35.48 грн
50+ 32.1 грн
100+ 27.35 грн
500+ 23.78 грн
1000+ 20.47 грн
Мінімальне замовлення: 6
TLE49645MXTSA1 TLE49645MXTSA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.7mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
TLE49646MXTMA1 TLE49646MXTMA1 Infineon Technologies Infineon-TLE4964_6M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e2117c81fe3 Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21956 шт:
термін постачання 21-31 дні (днів)
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
5000+ 18.2 грн
Мінімальне замовлення: 6
KITLEDXMC1202AS01TOBO1 KITLEDXMC1202AS01TOBO1 Infineon Technologies Infineon-RGB_LED+Lighting+Shield_PB-PB-v01_00-EN.pdf?fileId=5546d4624933b87501497af6dacd211a&ack=t Description: KIT EVAL LIGHTING RGB W/XMC1202
Packaging: Box
Voltage - Input: 12V ~ 48V
Utilized IC / Part: XMC1202
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1780.65 грн
IPA80R1K0CEXKSA1 IPA80R1K0CEXKSA1 Infineon Technologies Infineon-IPA80R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
IPA80R310CEXKSA1 IPA80R310CEXKSA1 Infineon Technologies Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45 Description: MOSFET N-CH 800V 6.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-FP
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
товар відсутній
IPS65R1K5CEAKMA1 IPS65R1K5CEAKMA1 Infineon Technologies Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92 Description: MOSFET N-CH 650V 3.1A TO251
товар відсутній
IPD60R2K1CEBTMA1 IPD60R2K1CEBTMA1 Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPD60R2K1CEBTMA1 IPD60R2K1CEBTMA1 Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPA50R380CEXKSA2 IPA50R380CEXKSA2 Infineon Technologies DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063 Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
IPA50R500CEXKSA2 IPA50R500CEXKSA2 Infineon Technologies Infineon-IPA50R500CE-DS-v02_00-EN.pdf?fileId=5546d46249cd10140149e640abc53919 Description: MOSFET N-CH 500V 5.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
4+75.39 грн
50+ 58.31 грн
100+ 46.21 грн
Мінімальне замовлення: 4
IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies IPA50R650CE.pdf Description: MOSFET N-CH 500V 4.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товар відсутній
IPA50R800CEXKSA2 IPA50R800CEXKSA2 Infineon Technologies Infineon-IPA50R800CE-DS-v02_01-en.pdf?fileId=db3a304339d29c450139d82a1c8656be Description: MOSFET N-CH 500V 4.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
5+64.83 грн
50+ 51.83 грн
100+ 37.62 грн
Мінімальне замовлення: 5
IPA50R950CEXKSA2 IPA50R950CEXKSA2 Infineon Technologies Infineon-IPA50R950CE-DS-v02_01-en.pdf?fileId=db3a3043382e8373013851892deb1048 Description: MOSFET N-CH 500V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товар відсутній
IPA60R400CEXKSA1 IPA60R400CEXKSA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: MOSFET N-CH 600V 10.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPA60R460CEXKSA1 IPA60R460CEXKSA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: MOSFET N-CH 600V 9.1A TO220-FP
товар відсутній
IPA60R650CEXKSA1 IPA60R650CEXKSA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: MOSFET N-CH 600V 7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
4+82.93 грн
50+ 63.68 грн
100+ 50.46 грн
Мінімальне замовлення: 4
IPA60R800CEXKSA1 IPA60R800CEXKSA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPA80R460CEXKSA1 IPA80R460CEXKSA1 Infineon Technologies Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55 Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-FP
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
товар відсутній
IPA80R650CEXKSA1 IPA80R650CEXKSA1 Infineon Technologies Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57 Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IPU60R1K0CEBKMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V TO-251-3
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
IPU60R1K5CEBKMA1 IPU60R1K5CEBKMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 3.1A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: TO-251
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товар відсутній
IPD60R1K5CEATMA1 IPD60R1K5CEATMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R400CEATMA1 IPD60R400CEATMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: MOSFET N-CH 600V 10.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPD60R460CEATMA1 IPD60R460CEATMA1 Infineon Technologies Infineon-IPA60R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c836730d1f10 Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R650CEATMA1 IPD60R650CEATMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPD60R800CEATMA1 IPD60R800CEATMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPD60R1K5CEATMA1 IPD60R1K5CEATMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V TO-252-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
7+45.23 грн
10+ 37.1 грн
Мінімальне замовлення: 7
IPD60R400CEATMA1 IPD60R400CEATMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: MOSFET N-CH 600V 10.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPD60R460CEATMA1 IPD60R460CEATMA1 Infineon Technologies Infineon-IPA60R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c836730d1f10 Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R650CEATMA1 IPD60R650CEATMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPD60R800CEATMA1 IPD60R800CEATMA1 Infineon Technologies IPD%2CIPA60R800CE.pdf Description: MOSFET N-CH 600V 5.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
AUIRS2012STR AUIRS2012STR Infineon Technologies AUIRS2012S.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
CHL8316CRT CHL8316CRT Infineon Technologies CHL8316.pdf Description: IC REG CTRLR DDR 2OUT 48QFN
товар відсутній
IR7106STRPBF IR7106STRPBF Infineon Technologies ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
IR7304STRPBF IR7304STRPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
IRFHM7194TRPBF IRFHM7194TRPBF Infineon Technologies IRFHM7194TRPbF.pdf Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
товар відсутній
IRMCF588QTR IRMCF588QTR Infineon Technologies IRMCF588.pdf Description: IC MOTOR DRIVER 100LQFP
товар відсутній
AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+274.67 грн
Мінімальне замовлення: 4000
IRF3707ZSTRLPBF IRF3707ZSTRLPBF Infineon Technologies IRF3707Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
товар відсутній
IRFH7184TRPBF IRFH7184TRPBF Infineon Technologies IRFH7184PbF.pdf Description: MOSFET N-CH 100V 20A/128A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
товар відсутній
IRFH7190TRPBF IRFH7190TRPBF Infineon Technologies IRFH7190PbF.pdf Description: MOSFET N-CH 100V 15A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
товар відсутній
IRFSL7437TRLPBF IRFSL7437TRLPBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N-CH 40V 195A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товар відсутній
IRGS4640DTRLPBF IRGS4640DTRLPBF Infineon Technologies IRGx4640D(-E)PbF.pdf Description: DIODE 600V 40A D2PAK
товар відсутній
IRGS4640DTRRPBF IRGS4640DTRRPBF Infineon Technologies IRGx4640D(-E)PbF.pdf Description: DIODE 600V 24A D2PAK
товар відсутній
IRDM982-035MBTR IRDM982-035MBTR Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRDM982-025MB IRDM982-025MB Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRDM982-035MB IRDM982-035MB Infineon Technologies IRDM982.pdf Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRMCF588QTY IRMCF588QTY Infineon Technologies IRMCF588.pdf Description: IC MOTOR DRIVER 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: I²C, RS-232
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (6)
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-LQFP (14x14)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
AUIRGF76524D0 AUIRGF76524D0 Infineon Technologies Description: DIODE IGBT 680V 24A TO-247AD
товар відсутній
AUIRGP76524D0 AUIRGP76524D0 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE IGBT 680V 24A TO-247AC
товар відсутній
AUIRGU4045D AUIRGU4045D Infineon Technologies auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f Description: DIODE 600V IGBT
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: I-PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
товар відсутній
IR7106SPBF IR7106SPBF Infineon Technologies ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
TLE49612MXTSA1 Infineon-TLE4961_2M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc965173b6517
TLE49612MXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 7.3mT Trip, -7.3mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+55.79 грн
10+ 40.73 грн
25+ 35.11 грн
50+ 31.79 грн
100+ 27.07 грн
500+ 23.54 грн
1000+ 20.26 грн
Мінімальне замовлення: 6
TLE49614MXTSA1 Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc
TLE49614MXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, -13.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2717 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+55.03 грн
10+ 40.36 грн
25+ 34.76 грн
50+ 31.48 грн
100+ 26.81 грн
500+ 23.31 грн
1000+ 20.06 грн
Мінімальне замовлення: 6
TLE49681MXTSA1 Infineon-TLE4968_1M-DS-v01_00-en.pdf?fileId=db3a304340155f3d01402f99caaa27d1
TLE49681MXTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23264 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLI49611MXTSA1 Infineon-TLI4961_1-DS-v01_01-en.pdf?fileId=db3a304338e5bb6e0138e7ae76540244
TLI49611MXTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.23 грн
10+ 33.47 грн
25+ 28.81 грн
50+ 26.08 грн
100+ 22.21 грн
500+ 19.32 грн
1000+ 16.62 грн
Мінімальне замовлення: 7
TLE49641MXTSA1 Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE49641MXTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 23.5mT Trip, 8.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 20040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49643MXTSA1 Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9
TLE49643MXTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 16.6mT Trip, 6.1mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 22580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
Мінімальне замовлення: 6
TLE49644MXTMA1 Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005
TLE49644MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.16 грн
25+ 35.48 грн
50+ 32.1 грн
100+ 27.35 грн
500+ 23.78 грн
1000+ 20.47 грн
Мінімальне замовлення: 6
TLE49645MXTSA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTSA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.7mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
TLE49646MXTMA1 Infineon-TLE4964_6M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e2117c81fe3
TLE49646MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 5.4mT Trip, 0.9mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.54 грн
10+ 41.31 грн
25+ 35.63 грн
50+ 32.24 грн
100+ 27.46 грн
500+ 23.88 грн
1000+ 20.55 грн
5000+ 18.2 грн
Мінімальне замовлення: 6
KITLEDXMC1202AS01TOBO1 Infineon-RGB_LED+Lighting+Shield_PB-PB-v01_00-EN.pdf?fileId=5546d4624933b87501497af6dacd211a&ack=t
KITLEDXMC1202AS01TOBO1
Виробник: Infineon Technologies
Description: KIT EVAL LIGHTING RGB W/XMC1202
Packaging: Box
Voltage - Input: 12V ~ 48V
Utilized IC / Part: XMC1202
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1780.65 грн
IPA80R1K0CEXKSA1 Infineon-IPA80R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b
IPA80R1K0CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
IPA80R310CEXKSA1 Infineon-IPA80R310CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c78875be1e45
IPA80R310CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-FP
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
товар відсутній
IPS65R1K5CEAKMA1 Infineon-IPS65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7acf11e1e92
IPS65R1K5CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.1A TO251
товар відсутній
IPD60R2K1CEBTMA1 Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
IPD60R2K1CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPD60R2K1CEBTMA1 Infineon-IPD60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
IPD60R2K1CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
товар відсутній
IPA50R380CEXKSA2 DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063
IPA50R380CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
IPA50R500CEXKSA2 Infineon-IPA50R500CE-DS-v02_00-EN.pdf?fileId=5546d46249cd10140149e640abc53919
IPA50R500CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 5.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.39 грн
50+ 58.31 грн
100+ 46.21 грн
Мінімальне замовлення: 4
IPA50R650CEXKSA2 IPA50R650CE.pdf
IPA50R650CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товар відсутній
IPA50R800CEXKSA2 Infineon-IPA50R800CE-DS-v02_01-en.pdf?fileId=db3a304339d29c450139d82a1c8656be
IPA50R800CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.83 грн
50+ 51.83 грн
100+ 37.62 грн
Мінімальне замовлення: 5
IPA50R950CEXKSA2 Infineon-IPA50R950CE-DS-v02_01-en.pdf?fileId=db3a3043382e8373013851892deb1048
IPA50R950CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товар відсутній
IPA60R400CEXKSA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPA60R400CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPA60R460CEXKSA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPA60R460CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.1A TO220-FP
товар відсутній
IPA60R650CEXKSA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPA60R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+82.93 грн
50+ 63.68 грн
100+ 50.46 грн
Мінімальне замовлення: 4
IPA60R800CEXKSA1 IPD%2CIPA60R800CE.pdf
IPA60R800CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPA80R1K4CEXKSA1 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPA80R460CEXKSA1 Infineon-IPA80R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c79199ef1e55
IPA80R460CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 7.1A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-FP
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
товар відсутній
IPA80R650CEXKSA1 Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57
IPA80R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товар відсутній
IPU60R1K0CEBKMA1 Infineon-IPD60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-251-3
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
IPU60R1K5CEBKMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPU60R1K5CEBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: TO-251
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
товар відсутній
IPD60R1K5CEATMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R400CEATMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPD60R400CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPD60R460CEATMA1 Infineon-IPA60R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c836730d1f10
IPD60R460CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R650CEATMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPD60R800CEATMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
IPD60R1K5CEATMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+45.23 грн
10+ 37.1 грн
Мінімальне замовлення: 7
IPD60R400CEATMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPD60R400CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
IPD60R460CEATMA1 Infineon-IPA60R460CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c836730d1f10
IPD60R460CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V TO-252-3
товар відсутній
IPD60R650CEATMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товар відсутній
IPD60R800CEATMA1 IPD%2CIPA60R800CE.pdf
IPD60R800CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
товар відсутній
AUIRS2012STR AUIRS2012S.pdf
AUIRS2012STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 22ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.5V
Current - Peak Output (Source, Sink): 2A, 2A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
CHL8316CRT CHL8316.pdf
CHL8316CRT
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48QFN
товар відсутній
IR7106STRPBF ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a
IR7106STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
IR7304STRPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
IRFHM7194TRPBF IRFHM7194TRPbF.pdf
IRFHM7194TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/34A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 50µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V
товар відсутній
IRMCF588QTR IRMCF588.pdf
IRMCF588QTR
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100LQFP
товар відсутній
AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+274.67 грн
Мінімальне замовлення: 4000
IRF3707ZSTRLPBF IRF3707Z%28S%2CL%29PbF.pdf
IRF3707ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
товар відсутній
IRFH7184TRPBF IRFH7184PbF.pdf
IRFH7184TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 20A/128A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
товар відсутній
IRFH7190TRPBF IRFH7190PbF.pdf
IRFH7190TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 15A/82A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 49A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
товар відсутній
IRFSL7437TRLPBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товар відсутній
IRGS4640DTRLPBF IRGx4640D(-E)PbF.pdf
IRGS4640DTRLPBF
Виробник: Infineon Technologies
Description: DIODE 600V 40A D2PAK
товар відсутній
IRGS4640DTRRPBF IRGx4640D(-E)PbF.pdf
IRGS4640DTRRPBF
Виробник: Infineon Technologies
Description: DIODE 600V 24A D2PAK
товар відсутній
IRDM982-035MBTR IRDM982.pdf
IRDM982-035MBTR
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRDM982-025MB IRDM982.pdf
IRDM982-025MB
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRDM982-035MB IRDM982.pdf
IRDM982-035MB
Виробник: Infineon Technologies
Description: IC MTR DRIVER 13.5V-16.5V 40PQFN
Packaging: Tray
Package / Case: 40-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Technology: Power MOSFET
Voltage - Load: 100V ~ 450V
Supplier Device Package: 40-PQFN (12x12)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
IRMCF588QTY IRMCF588.pdf
IRMCF588QTY
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: I²C, RS-232
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (6)
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-LQFP (14x14)
Motor Type - AC, DC: AC, Synchronous
Part Status: Obsolete
товар відсутній
AUIRGF76524D0
AUIRGF76524D0
Виробник: Infineon Technologies
Description: DIODE IGBT 680V 24A TO-247AD
товар відсутній
AUIRGP76524D0 Part_Number_Guide_Web.pdf
AUIRGP76524D0
Виробник: Infineon Technologies
Description: DIODE IGBT 680V 24A TO-247AC
товар відсутній
AUIRGU4045D auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f
AUIRGU4045D
Виробник: Infineon Technologies
Description: DIODE 600V IGBT
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: I-PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
товар відсутній
IR7106SPBF ir7106s.pdf?fileId=5546d462533600a4015355d61a06182a
IR7106SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товар відсутній
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