Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TK10A60W,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Power dissipation: 30W Case: SC67 Gate-source voltage: ±30V On-state resistance: 327mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK10A60W5,S5VX(M | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Power dissipation: 30W Case: SC67 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 876 шт: термін постачання 14-21 дні (днів) |
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TK10A80W,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9.5A Power dissipation: 40W Case: SC67 Gate-source voltage: ±20V On-state resistance: 0.46Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 152 шт: термін постачання 14-21 дні (днів) |
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TK10E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.7A Power dissipation: 100W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK110P10PL,RQ(S2 | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 160A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 64 шт: термін постачання 14-21 дні (днів) |
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TK11P65W,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Case: DPAK Drain-source voltage: 650V Drain current: 11.1A On-state resistance: 440mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar кількість в упаковці: 1 шт |
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TK12P60W.RVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Power dissipation: 100W Case: DPAK Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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TK12Q60W,S1VQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.5A Pulsed drain current: 46A Power dissipation: 100W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK13P25D,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Mounting: SMD Drain-source voltage: 250V Drain current: 13A кількість в упаковці: 1 шт |
на замовлення 2795 шт: термін постачання 14-21 дні (днів) |
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TK14A65W,S5X(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP Mounting: THT Kind of package: tube Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220FP Drain-source voltage: 650V Drain current: 13.7A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 42 шт: термін постачання 14-21 дні (днів) |
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TK15J50D(F) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 15A Power dissipation: 210W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 922 шт: термін постачання 14-21 дні (днів) |
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TK160F10N1L,LQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 375W Case: TO220SM Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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TK16A60W,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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TK16A60W5,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 600 шт |
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TK16E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 750 шт |
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TK16N60W,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK16N60W5,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 63.2A Power dissipation: 130W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK18A30D,S5X(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 18A Power dissipation: 45W Case: SC67 Gate-source voltage: ±20V On-state resistance: 139mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK20A60W,S5VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 172 шт: термін постачання 14-21 дні (днів) |
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TK20G60W,RVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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TK20N60W,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 165W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK20P04M1,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 27W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK22E10N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 72W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK25S06N1L,LQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2000 шт |
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TK2K2A60F,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK30E06N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB Mounting: THT Drain-source voltage: 60V Drain current: 30A On-state resistance: 12.2mΩ Type of transistor: N-MOSFET Power dissipation: 53W Polarisation: unipolar Kind of package: tube Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220AB кількість в упаковці: 1 шт |
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TK31E60W,S1VX(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30.8A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK31V60W5,LVQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm Case: DFN Mounting: SMD Dimensions: 8x8mm Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 30.8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Power dissipation: 240W Polarisation: unipolar кількість в упаковці: 1 шт |
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TK32E12N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 32A Power dissipation: 98W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK33S10N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 125W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16.2Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 821 шт: термін постачання 14-21 дні (днів) |
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TK34E10N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 103W Case: TO220 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 812 шт: термін постачання 14-21 дні (днів) |
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TK35E08N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 72W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 112 шт: термін постачання 14-21 дні (днів) |
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TK380A60Y,S4X | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.1A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.1A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK39J60W,S1VQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38.8A Power dissipation: 270W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK39N60X,S1F(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38.8A Power dissipation: 270W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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TK3A65D | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.93Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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TK3P50D,RQ | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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TK40E06N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 67W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 67W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK40E10N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 126W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1450 шт |
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TK42A12N1,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 42A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK430A60F,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 52A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 52A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 850 шт |
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TK49N65W,S1F(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 49.2A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK4A60DA(STA4,Q,M) | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67 Mounting: THT Kind of package: tube Drain current: 3.5A On-state resistance: 2.2Ω Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Case: SC67 Drain-source voltage: 600V кількість в упаковці: 1 шт |
на замовлення 617 шт: термін постачання 14-21 дні (днів) |
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TK56E12N1,S1X(S | TOSHIBA | TK56E12N1 THT N channel transistors |
на замовлення 810 шт: термін постачання 14-21 дні (днів) |
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TK58E06N1,S1X | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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TK60S06K3L(T6L1,NQ | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 120A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2000 шт |
товар відсутній |
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TK60S10N1L,LQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 180W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.14mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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TK62J60W,S1VQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK62N60W,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK62N60W5,S1VF(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Pulsed drain current: 247A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 205nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK62N60X,S1F(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Pulsed drain current: 247A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 135nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK650A60F,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 45W Drain-source voltage: 600V Drain current: 11A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A кількість в упаковці: 1 шт |
на замовлення 1071 шт: термін постачання 14-21 дні (днів) |
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TK65A10N1,S4X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 148A; 45W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 100V Drain current: 148A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 81nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 850 шт |
товар відсутній |
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TK65E10N1,S1X(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 296A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK65G10N1,RQ(S | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 283A Power dissipation: 156W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 81nC Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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TK65S04K3L(T6L1,NQ | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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TK65S04N1L,LQ(O | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2000 шт |
товар відсутній |
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TK6A50D(STA4,Q,M) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP Mounting: THT Kind of package: tube Drain current: 6A Kind of channel: enhanced Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO220FP On-state resistance: 1.2Ω Pulsed drain current: 24A Power dissipation: 35W Gate charge: 11nC Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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TK6A60W,S4VX(M | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1200 шт |
товар відсутній |
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TK6A65D(STA4,Q,M) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Drain-source voltage: 650V Drain current: 6A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 24A Mounting: THT Case: TO220FP кількість в упаковці: 1 шт |
товар відсутній |
TK10A60W,S4VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 327mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 327mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK10A60W5,S5VX(M |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 30W
Case: SC67
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 876 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 164.63 грн |
3+ | 142.33 грн |
10+ | 105.43 грн |
27+ | 100.16 грн |
TK10A80W,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9.5A
Power dissipation: 40W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9.5A; 40W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9.5A
Power dissipation: 40W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 152 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 284.79 грн |
3+ | 247.25 грн |
5+ | 208.22 грн |
14+ | 197.68 грн |
50+ | 189.77 грн |
TK10E60W,S1VX(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK110P10PL,RQ(S2 |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 160A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 160A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 64 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 70.96 грн |
5+ | 56.38 грн |
25+ | 42.17 грн |
68+ | 39.54 грн |
TK11P65W,RQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 650V
Drain current: 11.1A
On-state resistance: 440mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: DPAK
Drain-source voltage: 650V
Drain current: 11.1A
On-state resistance: 440mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
TK12P60W.RVQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
TK12Q60W,S1VQ(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.5A; Idm: 46A; 100W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.5A
Pulsed drain current: 46A
Power dissipation: 100W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK13P25D,RQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Drain-source voltage: 250V
Drain current: 13A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 13A; 96W; DPAK
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Drain-source voltage: 250V
Drain current: 13A
кількість в упаковці: 1 шт
на замовлення 2795 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.15 грн |
5+ | 69.34 грн |
21+ | 50.96 грн |
56+ | 48.32 грн |
TK14A65W,S5X(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 650V
Drain current: 13.7A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.7A; 40W; TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220FP
Drain-source voltage: 650V
Drain current: 13.7A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 252.62 грн |
3+ | 218.97 грн |
7+ | 159.02 грн |
18+ | 151.11 грн |
TK15J50D(F) |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 210W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 210W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 210W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 922 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 210.99 грн |
3+ | 183.38 грн |
8+ | 141.45 грн |
20+ | 133.54 грн |
TK160F10N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 312.23 грн |
5+ | 270.06 грн |
6+ | 198.56 грн |
15+ | 188.01 грн |
TK16A60W,S4VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 217.62 грн |
3+ | 187.95 грн |
8+ | 140.57 грн |
21+ | 132.66 грн |
TK16A60W5,S4VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 600 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 600 шт
товар відсутній
TK16E60W,S1VX(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 750 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 750 шт
товар відсутній
TK16N60W,S1VF(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK16N60W5,S1VF(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.8A; Idm: 63.2A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.8A
Pulsed drain current: 63.2A
Power dissipation: 130W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK18A30D,S5X(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 18A
Power dissipation: 45W
Case: SC67
Gate-source voltage: ±20V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK20A60W,S5VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 172 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 274.38 грн |
3+ | 237.21 грн |
6+ | 188.01 грн |
15+ | 177.47 грн |
250+ | 170.44 грн |
TK20G60W,RVQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
TK20N60W,S1VF(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 165W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK20P04M1,RQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 27W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK22E10N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK25S06N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
TK2K2A60F,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK30E06N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 53W; TO220AB
Mounting: THT
Drain-source voltage: 60V
Drain current: 30A
On-state resistance: 12.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
кількість в упаковці: 1 шт
товар відсутній
TK31E60W,S1VX(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30.8A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK31V60W5,LVQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Case: DFN
Mounting: SMD
Dimensions: 8x8mm
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 30.8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN; 8x8mm
Case: DFN
Mounting: SMD
Dimensions: 8x8mm
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 30.8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Power dissipation: 240W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
TK32E12N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 32A; 98W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 32A
Power dissipation: 98W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.8mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK33S10N1L,LQ(O |
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 821 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 134.35 грн |
5+ | 116.78 грн |
12+ | 88.74 грн |
32+ | 83.46 грн |
TK34E10N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 812 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.64 грн |
10+ | 65.01 грн |
17+ | 63.26 грн |
45+ | 59.74 грн |
50+ | 58.86 грн |
TK35E08N1,S1X(S |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 72W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 72W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 112 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.37 грн |
5+ | 64.14 грн |
10+ | 54.21 грн |
22+ | 47.97 грн |
59+ | 45.33 грн |
250+ | 45.07 грн |
TK380A60Y,S4X |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.1A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.1A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.1A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.1A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK39J60W,S1VQ(O |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK39N60X,S1F(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 80 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 559.18 грн |
3+ | 402.35 грн |
8+ | 366.36 грн |
TK3A65D |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.93Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.93Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.13 грн |
10+ | 96.64 грн |
29+ | 94.01 грн |
50+ | 90.49 грн |
TK3P50D,RQ |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
TK40E06N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 67W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 67W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 67W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 67W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK40E10N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 126W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1450 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 126W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1450 шт
товар відсутній
TK42A12N1,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 42A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 42A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK430A60F,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 52A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 850 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 52A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 850 шт
товар відсутній
TK49N65W,S1F(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK4A60DA(STA4,Q,M) |
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Mounting: THT
Kind of package: tube
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: SC67
Drain-source voltage: 600V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 35W; SC67
Mounting: THT
Kind of package: tube
Drain current: 3.5A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: SC67
Drain-source voltage: 600V
кількість в упаковці: 1 шт
на замовлення 617 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.69 грн |
6+ | 53.83 грн |
10+ | 45.86 грн |
26+ | 39.54 грн |
72+ | 37.43 грн |
TK56E12N1,S1X(S |
Виробник: TOSHIBA
TK56E12N1 THT N channel transistors
TK56E12N1 THT N channel transistors
на замовлення 810 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 180.72 грн |
10+ | 109.82 грн |
26+ | 103.67 грн |
TK58E06N1,S1X |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK60S06K3L(T6L1,NQ |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 120A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 120A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2000 шт
товар відсутній
TK60S10N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
TK62J60W,S1VQ(O |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK62N60W,S1VF(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK62N60W5,S1VF(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK62N60X,S1F(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK650A60F,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 45W
Drain-source voltage: 600V
Drain current: 11A
On-state resistance: 0.54Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
кількість в упаковці: 1 шт
на замовлення 1071 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 173.15 грн |
3+ | 150.54 грн |
10+ | 109.82 грн |
26+ | 103.67 грн |
TK65A10N1,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 148A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 850 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 100V
Drain current: 148A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 850 шт
товар відсутній
TK65E10N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 148A; Idm: 296A; 192W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 296A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
TK65G10N1,RQ(S |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 283A
Power dissipation: 156W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
TK65S04K3L(T6L1,NQ |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
TK65S04N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2000 шт
товар відсутній
TK6A50D(STA4,Q,M) |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 1.2Ω
Pulsed drain current: 24A
Power dissipation: 35W
Gate charge: 11nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Drain current: 6A
Kind of channel: enhanced
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO220FP
On-state resistance: 1.2Ω
Pulsed drain current: 24A
Power dissipation: 35W
Gate charge: 11nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
TK6A60W,S4VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1200 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1200 шт
товар відсутній
TK6A65D(STA4,Q,M) |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній