| Фото | Назва | Виробник | Інформація |
Доступність |
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74VHCT540AFT(BE) | TOSHIBA |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 8; C²MOS; SMD; VHCT Case: TSSOP20 Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: 8 Delay time: 5.4ns Kind of package: reel; tape Manufacturer series: VHCT Technology: C²MOS Kind of integrated circuit: buffer; inverting; line driver Terminal pitch: 0.65mm Supply voltage: 4.5...5.5V DC кількість в упаковці: 1 шт |
на замовлення 12461 шт: термін постачання 14-21 дні (днів) |
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74VHCT573AFT(BJ) | TOSHIBA |
Category: Latches Description: IC: digital; D latch; Ch: 8; C²MOS; 4.5÷5.5VDC; SMD; TSSOP20; VHCT Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: C²MOS Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Terminal pitch: 0.65mm Delay time: 7.7ns кількість в упаковці: 1 шт |
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74VHCT574AFT(BJ) | TOSHIBA |
Category: Flip-Flops Description: IC: digital; D flip-flop; C²MOS; VHCT; SMD; TSSOP20; reel,tape Operating temperature: -40...125°C Mounting: SMD Manufacturer series: VHCT Supply voltage: 4.5...5.5V DC Case: TSSOP20 Trigger: rising-edge Technology: C²MOS Kind of integrated circuit: D flip-flop Terminal pitch: 0.65mm Frequency: 140MHz Type of integrated circuit: digital Kind of output: 3-state Kind of package: reel; tape кількість в упаковці: 1 шт |
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| 74VHCV541FT(BJ) | TOSHIBA | 74VHCV541FTBJ Buffers, transceivers, drivers |
товар відсутній |
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BAS316,H3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD323; Ufmax: 1.25V; 230mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 3ns Semiconductor structure: single diode Capacitance: 0.35pF Case: SOD323 Max. forward voltage: 1.25V Max. load current: 0.5A Max. forward impulse current: 1A Power dissipation: 0.23W Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 8170 шт: термін постачання 14-21 дні (днів) |
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BAS516,H3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Max. load current: 0.5A Reverse recovery time: 3ns Semiconductor structure: single diode Capacitance: 0.35pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 1A Power dissipation: 0.15W Kind of package: reel; tape кількість в упаковці: 1 шт |
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BAS516,L3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Max. load current: 0.5A Reverse recovery time: 3ns Semiconductor structure: single diode Capacitance: 0.35pF Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 1A Power dissipation: 0.15W Kind of package: reel; tape кількість в упаковці: 1 шт |
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BAV70,LM(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 0.9pF Case: SOT23 Max. forward voltage: 1.25V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.15W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2874 шт: термін постачання 14-21 дні (днів) |
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| CES388,L3F | TOSHIBA |
CES388 SMD Schottky diodes |
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| CMS01(TE12L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; M-FLAT; reel,tape Case: M-FLAT Max. off-state voltage: 30V Max. forward voltage: 0.37V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD кількість в упаковці: 1 шт |
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CMS11(TE12L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: M-FLAT Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape кількість в упаковці: 1 шт |
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CMS16(TE12L,Q) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; M-FLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: M-FLAT Kind of package: reel; tape Max. forward impulse current: 30A кількість в упаковці: 1 шт |
на замовлення 1303 шт: термін постачання 14-21 дні (днів) |
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CRF02(TE85L,Q,M) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V Mounting: SMD Case: S-FLAT Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 0.8kV Max. forward voltage: 2.2V Load current: 0.5A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 10A кількість в упаковці: 1 шт |
на замовлення 1137 шт: термін постачання 14-21 дні (днів) |
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| CRG07(TE85L,Q,M) | TOSHIBA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 700mA; S-FLAT; Ufmax: 1.1V; Ifsm: 15A Mounting: SMD Case: S-FLAT Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 15A кількість в упаковці: 5 шт |
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CRS01(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.37V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 22A кількість в упаковці: 5 шт |
на замовлення 11140 шт: термін постачання 14-21 дні (днів) |
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CRS03(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.45V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A кількість в упаковці: 6000 шт |
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CRS04(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.49V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A кількість в упаковці: 5 шт |
на замовлення 395 шт: термін постачання 14-21 дні (днів) |
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CRS05(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.45V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A кількість в упаковці: 5 шт |
на замовлення 10115 шт: термін постачання 14-21 дні (днів) |
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CRS06(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward voltage: 0.36V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A кількість в упаковці: 5 шт |
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CRS08(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.36V Load current: 1.5A Semiconductor structure: single diode Max. forward impulse current: 30A кількість в упаковці: 5 шт |
на замовлення 45 шт: термін постачання 14-21 дні (днів) |
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CRS09(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.46V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A кількість в упаковці: 5 шт |
на замовлення 3505 шт: термін постачання 14-21 дні (днів) |
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CRS13(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 20A кількість в упаковці: 5 шт |
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CRS14(TE85L,Q,M) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.49V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 30A кількість в упаковці: 1 шт |
на замовлення 3781 шт: термін постачання 14-21 дні (днів) |
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CRS15I30B(TE85L,QM | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape Mounting: SMD Case: S-FLAT Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 30A Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.4V Load current: 1.5A кількість в упаковці: 5 шт |
на замовлення 483 шт: термін постачання 14-21 дні (днів) |
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| CRS20I40A(TE85L,QM | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: S-FLAT Max. forward voltage: 0.6V Max. forward impulse current: 20A Kind of package: reel; tape кількість в упаковці: 1 шт |
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CUS10F30,H3F | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Max. off-state voltage: 30V Load current: 1A Max. forward impulse current: 5A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 0.43V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying кількість в упаковці: 5 шт |
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CUS10S30,H3F(T | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 5A кількість в упаковці: 5 шт |
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CUS520,H3F(T | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 1A кількість в упаковці: 5 шт |
на замовлення 1499 шт: термін постачання 14-21 дні (днів) |
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DF10G5M4N,LF(D | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Mounting: SMD Case: DFN10 Kind of package: reel; tape Max. off-state voltage: 3.6V Semiconductor structure: bidirectional Max. forward impulse current: 2A Breakdown voltage: 5V Leakage current: 0.1µA Number of channels: 4 Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 30W кількість в упаковці: 1 шт |
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DF2B36FU,H3F(T | TOSHIBA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 150W Max. off-state voltage: 28V Breakdown voltage: 32V Max. forward impulse current: 2.5A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection кількість в упаковці: 5 шт |
на замовлення 6165 шт: термін постачання 14-21 дні (днів) |
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| DF5A3.6JE,LM(T | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT553 Semiconductor structure: common anode; unidirectional Leakage current: 10µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.1W Breakdown voltage: 3.6V Number of channels: 4 кількість в упаковці: 5 шт |
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DF5A5.6F(TE85L,F) | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25 Number of channels: 4 Mounting: SMD Case: SOT25 Kind of package: reel; tape Breakdown voltage: 5.6V Leakage current: 1µA Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.2W Semiconductor structure: common anode; unidirectional кількість в упаковці: 5 шт |
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DF5A6.2CJE,LM | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553 Type of diode: TVS array Semiconductor structure: common anode; unidirectional Case: SOT553 Mounting: SMD Features of semiconductor devices: ESD protection Kind of package: reel; tape Leakage current: 2.5µA Peak pulse power dissipation: 0.1W Breakdown voltage: 6.2V Number of channels: 4 кількість в упаковці: 5 шт |
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EMPP008Z | TOSHIBA |
Category: One Phase Inverters Description: EMC cover Type of installation accessories: EMC cover кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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GT15J341,S4X(S | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 30W Case: TO220FP Gate-emitter voltage: ±25V Pulsed collector current: 60A Mounting: THT Kind of package: tube Turn-on time: 180ns Turn-off time: 320ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 253 шт: термін постачання 14-21 дні (днів) |
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GT20J341,S4X(S | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 11A Power dissipation: 45W Case: TO220FP Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 0.2µs Turn-off time: 370ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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GT30J121(Q) | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 170W Case: TO3PN Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Kind of package: tube Turn-on time: 240ns Turn-off time: 430ns кількість в упаковці: 1 шт |
на замовлення 64 шт: термін постачання 14-21 дні (днів) |
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GT40QR21(STA1,E,D | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 35A Power dissipation: 230W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 0.3µs Turn-off time: 0.6µs Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 426 шт: термін постачання 14-21 дні (днів) |
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GT40WR21,Q(O | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 1.8kV Collector current: 40A Power dissipation: 375W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 950ns Turn-off time: 570ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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GT50JR21(STA1,E,S) | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN Mounting: THT Type of transistor: IGBT Power dissipation: 230W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Case: TO3PN Collector-emitter voltage: 600V Gate-emitter voltage: ±25V Collector current: 49A Pulsed collector current: 100A Turn-on time: 430ns Turn-off time: 720ns кількість в упаковці: 1 шт |
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GT50JR22(STA1,E,S) | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 44A Power dissipation: 115W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 100A Mounting: THT Kind of package: tube Turn-on time: 250ns Turn-off time: 330ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 260 шт: термін постачання 14-21 дні (днів) |
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HN1B04FE-GR,LF(T | TOSHIBA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.1W Case: SOT563F Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz кількість в упаковці: 20 шт |
на замовлення 27800 шт: термін постачання 14-21 дні (днів) |
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HN1B04FU-GR(L,F,T) | TOSHIBA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC88 Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz кількість в упаковці: 5 шт |
на замовлення 1480 шт: термін постачання 14-21 дні (днів) |
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| HN2S01FU(TE85L,F) | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW Mounting: SMD Case: US6 Kind of package: reel; tape Power dissipation: 0.2W Type of diode: Schottky switching Max. off-state voltage: 15V Max. load current: 0.2A Max. forward voltage: 0.5V Load current: 0.1A Semiconductor structure: triple independent Max. forward impulse current: 1A кількість в упаковці: 1 шт |
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| JDH3D01FV(TPL3) | TOSHIBA | JDH3D01FV SMD Schottky diodes |
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| RFM04U6P(TE12L,F) | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 16V Drain current: 2A Power dissipation: 7W Case: PW-Mini Gate-source voltage: ±3V Kind of package: reel; tape Frequency: 470MHz Kind of channel: depleted Output power: 4.3W Electrical mounting: SMT Open-loop gain: 13.3dB Efficiency: 70% кількість в упаковці: 1000 шт |
товар відсутній |
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RN1401,LF(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ кількість в упаковці: 20 шт |
на замовлення 1500 шт: термін постачання 14-21 дні (днів) |
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RN1402(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 50 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
товар відсутній |
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 +1 |
RN1406(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 510 шт: термін постачання 14-21 дні (днів) |
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RN1411(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 1585 шт: термін постачання 14-21 дні (днів) |
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RN1427(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 300MHz кількість в упаковці: 12000 шт |
товар відсутній |
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RN1604(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ Mounting: SMD Case: SM6 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 2995 шт: термін постачання 14-21 дні (днів) |
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| RN1910FE,LF(CT | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ Case: ES6 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 120...700 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.1W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Mounting: SMD кількість в упаковці: 5 шт |
товар відсутній |
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RN2405,LXGF(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ Frequency: 200MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC59 кількість в упаковці: 30000 шт |
товар відсутній |
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RN2410(TE85L,F) | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 2630 шт: термін постачання 14-21 дні (днів) |
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| RN4982FE,LF(CT | TOSHIBA |
RN4982FE Complementary transistors |
товар відсутній |
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SSM3J16FS(TE85L,F) | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -100mA On-state resistance: 45Ω Type of transistor: P-MOSFET Power dissipation: 0.1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
на замовлення 1861 шт: термін постачання 14-21 дні (днів) |
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SSM3J327R,LF(B | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
товар відсутній |
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SSM3J328R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 88.4mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3J331R,LF | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 2805 шт: термін постачання 14-21 дні (днів) |
|
| 74VHCT540AFT(BE) |
|
Виробник: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; C²MOS; SMD; VHCT
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Delay time: 5.4ns
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: C²MOS
Kind of integrated circuit: buffer; inverting; line driver
Terminal pitch: 0.65mm
Supply voltage: 4.5...5.5V DC
кількість в упаковці: 1 шт
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; C²MOS; SMD; VHCT
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Delay time: 5.4ns
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: C²MOS
Kind of integrated circuit: buffer; inverting; line driver
Terminal pitch: 0.65mm
Supply voltage: 4.5...5.5V DC
кількість в упаковці: 1 шт
на замовлення 12461 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.96 грн |
| 10+ | 57.12 грн |
| 25+ | 33.87 грн |
| 52+ | 20.15 грн |
| 142+ | 19.08 грн |
| 500+ | 18.36 грн |
| 74VHCT573AFT(BJ) |
|
Виробник: TOSHIBA
Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Terminal pitch: 0.65mm
Delay time: 7.7ns
кількість в упаковці: 1 шт
Category: Latches
Description: IC: digital; D latch; Ch: 8; C²MOS; 4.5÷5.5VDC; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: C²MOS
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Terminal pitch: 0.65mm
Delay time: 7.7ns
кількість в упаковці: 1 шт
товар відсутній
| 74VHCT574AFT(BJ) |
|
Виробник: TOSHIBA
Category: Flip-Flops
Description: IC: digital; D flip-flop; C²MOS; VHCT; SMD; TSSOP20; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Case: TSSOP20
Trigger: rising-edge
Technology: C²MOS
Kind of integrated circuit: D flip-flop
Terminal pitch: 0.65mm
Frequency: 140MHz
Type of integrated circuit: digital
Kind of output: 3-state
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Flip-Flops
Description: IC: digital; D flip-flop; C²MOS; VHCT; SMD; TSSOP20; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Manufacturer series: VHCT
Supply voltage: 4.5...5.5V DC
Case: TSSOP20
Trigger: rising-edge
Technology: C²MOS
Kind of integrated circuit: D flip-flop
Terminal pitch: 0.65mm
Frequency: 140MHz
Type of integrated circuit: digital
Kind of output: 3-state
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| BAS316,H3F(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD323; Ufmax: 1.25V; 230mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.23W
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD323; Ufmax: 1.25V; 230mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 1A
Power dissipation: 0.23W
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 8170 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 5.9 грн |
| 120+ | 2.4 грн |
| 500+ | 2.09 грн |
| 630+ | 1.68 грн |
| 1730+ | 1.58 грн |
| 12000+ | 1.52 грн |
| BAS516,H3F(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| BAS516,L3F(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 3ns
Semiconductor structure: single diode
Capacitance: 0.35pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| BAV70,LM(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.15W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2874 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 12.67 грн |
| 38+ | 7.41 грн |
| 100+ | 6.42 грн |
| 214+ | 4.9 грн |
| 589+ | 4.64 грн |
| CMS01(TE12L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; M-FLAT; reel,tape
Case: M-FLAT
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| CMS11(TE12L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: M-FLAT
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| CMS16(TE12L,Q) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: M-FLAT
Kind of package: reel; tape
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; M-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: M-FLAT
Kind of package: reel; tape
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
на замовлення 1303 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.96 грн |
| 25+ | 17.03 грн |
| 80+ | 12.93 грн |
| 219+ | 12.21 грн |
| 3000+ | 12.12 грн |
| CRF02(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 2.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 10A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 800V; 500mA; 100ns; S-FLAT; Ufmax: 2.2V
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 2.2V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 10A
кількість в упаковці: 1 шт
на замовлення 1137 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 18.53 грн |
| 27+ | 10.55 грн |
| 100+ | 8.91 грн |
| 309+ | 8.74 грн |
| 500+ | 8.38 грн |
| CRG07(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 700mA; S-FLAT; Ufmax: 1.1V; Ifsm: 15A
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 15A
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 700mA; S-FLAT; Ufmax: 1.1V; Ifsm: 15A
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 15A
кількість в упаковці: 5 шт
товар відсутній
| CRS01(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 22A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.37V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 22A
кількість в упаковці: 5 шт
на замовлення 11140 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 14.21 грн |
| 30+ | 9.26 грн |
| 100+ | 7.84 грн |
| 145+ | 7.31 грн |
| 395+ | 6.86 грн |
| 3000+ | 6.6 грн |
| CRS03(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 6000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 6000 шт
товар відсутній
| CRS04(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.49V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
на замовлення 395 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 14.21 грн |
| 30+ | 9.81 грн |
| 100+ | 8.38 грн |
| 140+ | 7.49 грн |
| 385+ | 7.04 грн |
| CRS05(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.45V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
на замовлення 10115 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.66 грн |
| 25+ | 16.48 грн |
| 85+ | 12.21 грн |
| 235+ | 11.5 грн |
| CRS06(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
товар відсутній
| CRS08(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.36V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.36V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
на замовлення 45 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.4 грн |
| 25+ | 12.59 грн |
| 100+ | 10.61 грн |
| 115+ | 9.18 грн |
| 310+ | 8.74 грн |
| CRS09(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.46V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
на замовлення 3505 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.4 грн |
| 25+ | 12.59 грн |
| 100+ | 10.7 грн |
| 110+ | 9.72 грн |
| 295+ | 9.18 грн |
| 3000+ | 8.91 грн |
| CRS13(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 20A
кількість в упаковці: 5 шт
товар відсутній
| CRS14(TE85L,Q,M) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
кількість в упаковці: 1 шт
на замовлення 3781 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24 грн |
| 25+ | 18.14 грн |
| 78+ | 13.46 грн |
| 212+ | 12.75 грн |
| CRS15I30B(TE85L,QM |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1.5A; S-FLAT; reel,tape
Mounting: SMD
Case: S-FLAT
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.4V
Load current: 1.5A
кількість в упаковці: 5 шт
на замовлення 483 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 30+ | 10.18 грн |
| 100+ | 8.65 грн |
| 130+ | 8.02 грн |
| 350+ | 7.58 грн |
| 3000+ | 7.4 грн |
| CRS20I40A(TE85L,QM |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: S-FLAT
Max. forward voltage: 0.6V
Max. forward impulse current: 20A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; S-FLAT; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: S-FLAT
Max. forward voltage: 0.6V
Max. forward impulse current: 20A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| CUS10F30,H3F |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 5A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 0.43V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
кількість в упаковці: 5 шт
товар відсутній
| CUS10S30,H3F(T |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
товар відсутній
| CUS520,H3F(T |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
кількість в упаковці: 5 шт
на замовлення 1499 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.72 грн |
| 100+ | 3.11 грн |
| 500+ | 2.69 грн |
| 510+ | 2.05 грн |
| 1395+ | 1.93 грн |
| DF10G5M4N,LF(D |
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Mounting: SMD
Case: DFN10
Kind of package: reel; tape
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Breakdown voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 30W
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Mounting: SMD
Case: DFN10
Kind of package: reel; tape
Max. off-state voltage: 3.6V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Breakdown voltage: 5V
Leakage current: 0.1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 30W
кількість в упаковці: 1 шт
товар відсутній
| DF2B36FU,H3F(T |
|
Виробник: TOSHIBA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 150W; 32V; 2.5A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 150W
Max. off-state voltage: 28V
Breakdown voltage: 32V
Max. forward impulse current: 2.5A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
кількість в упаковці: 5 шт
на замовлення 6165 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.44 грн |
| 35+ | 8.79 грн |
| 100+ | 7.47 грн |
| 155+ | 6.27 грн |
| 430+ | 5.93 грн |
| DF5A3.6JE,LM(T |
|
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.6V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT553
Semiconductor structure: common anode; unidirectional
Leakage current: 10µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.1W
Breakdown voltage: 3.6V
Number of channels: 4
кількість в упаковці: 5 шт
товар відсутній
| DF5A5.6F(TE85L,F) |
|
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
кількість в упаковці: 5 шт
товар відсутній
| DF5A6.2CJE,LM |
|
Виробник: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2V; 0.1W; unidirectional,common anode; SOT553
Type of diode: TVS array
Semiconductor structure: common anode; unidirectional
Case: SOT553
Mounting: SMD
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Leakage current: 2.5µA
Peak pulse power dissipation: 0.1W
Breakdown voltage: 6.2V
Number of channels: 4
кількість в упаковці: 5 шт
товар відсутній
| EMPP008Z |
Виробник: TOSHIBA
Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
кількість в упаковці: 1 шт
Category: One Phase Inverters
Description: EMC cover
Type of installation accessories: EMC cover
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1426.56 грн |
| GT15J341,S4X(S |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 180ns
Turn-off time: 320ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 30W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 30W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 180ns
Turn-off time: 320ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 253 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 153.6 грн |
| 3+ | 132.38 грн |
| 10+ | 106.97 грн |
| 27+ | 101.62 грн |
| GT20J341,S4X(S |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 11A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 11A; 45W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 11A
Power dissipation: 45W
Case: TO220FP
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.2µs
Turn-off time: 370ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| GT30J121(Q) |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
кількість в упаковці: 1 шт
на замовлення 64 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.04 грн |
| 3+ | 249.94 грн |
| 6+ | 188.98 грн |
| 16+ | 178.29 грн |
| GT40QR21(STA1,E,D |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 35A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 35A; 230W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 35A
Power dissipation: 230W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 0.3µs
Turn-off time: 0.6µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 426 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 306.24 грн |
| 5+ | 265.68 грн |
| 6+ | 194.33 грн |
| 15+ | 183.63 грн |
| GT40WR21,Q(O |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1048.32 грн |
| 2+ | 750.75 грн |
| 4+ | 683.73 грн |
| 5+ | 682.83 грн |
| GT50JR21(STA1,E,S) |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Mounting: THT
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Turn-on time: 430ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Mounting: THT
Type of transistor: IGBT
Power dissipation: 230W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Case: TO3PN
Collector-emitter voltage: 600V
Gate-emitter voltage: ±25V
Collector current: 49A
Pulsed collector current: 100A
Turn-on time: 430ns
Turn-off time: 720ns
кількість в упаковці: 1 шт
товар відсутній
| GT50JR22(STA1,E,S) |
|
Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 115W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 44A
Power dissipation: 115W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 100A
Mounting: THT
Kind of package: tube
Turn-on time: 250ns
Turn-off time: 330ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 260 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.8 грн |
| 4+ | 273.09 грн |
| 11+ | 248.71 грн |
| 25+ | 246.93 грн |
| 100+ | 239.79 грн |
| HN1B04FE-GR,LF(T |
|
Виробник: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
кількість в упаковці: 20 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.1W
Case: SOT563F
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
кількість в упаковці: 20 шт
на замовлення 27800 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 4.42 грн |
| 100+ | 3.82 грн |
| 360+ | 2.93 грн |
| 1000+ | 2.77 грн |
| 4000+ | 2.73 грн |
| HN1B04FU-GR(L,F,T) |
|
Виробник: TOSHIBA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC88
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
кількість в упаковці: 5 шт
на замовлення 1480 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 55+ | 5.33 грн |
| 100+ | 4.64 грн |
| 295+ | 3.56 грн |
| 810+ | 3.36 грн |
| HN2S01FU(TE85L,F) |
|
Виробник: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 15V; 0.1A; US6; reel,tape; 200mW
Mounting: SMD
Case: US6
Kind of package: reel; tape
Power dissipation: 0.2W
Type of diode: Schottky switching
Max. off-state voltage: 15V
Max. load current: 0.2A
Max. forward voltage: 0.5V
Load current: 0.1A
Semiconductor structure: triple independent
Max. forward impulse current: 1A
кількість в упаковці: 1 шт
товар відсутній
| RFM04U6P(TE12L,F) |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 16V; 2A; 7W; PW-Mini; Pout: 4.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of transistor: RF
Drain-source voltage: 16V
Drain current: 2A
Power dissipation: 7W
Case: PW-Mini
Gate-source voltage: ±3V
Kind of package: reel; tape
Frequency: 470MHz
Kind of channel: depleted
Output power: 4.3W
Electrical mounting: SMT
Open-loop gain: 13.3dB
Efficiency: 70%
кількість в упаковці: 1000 шт
товар відсутній
| RN1401,LF(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 20 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
кількість в упаковці: 20 шт
на замовлення 1500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.46 грн |
| 140+ | 2.17 грн |
| 500+ | 1.84 грн |
| 620+ | 1.67 грн |
| 1720+ | 1.58 грн |
| 12000+ | 1.54 грн |
| RN1402(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
товар відсутній
| RN1406(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 510 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 60+ | 5.04 грн |
| 100+ | 4.36 грн |
| 310+ | 3.35 грн |
| 850+ | 3.17 грн |
| RN1411(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 1585 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 10.75 грн |
| 85+ | 3.3 грн |
| 100+ | 2.8 грн |
| 500+ | 2.62 грн |
| RN1427(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
кількість в упаковці: 12000 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
кількість в упаковці: 12000 шт
товар відсутній
| RN1604(TE85L,F) |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 2995 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.63 грн |
| 35+ | 8.15 грн |
| 100+ | 6.95 грн |
| 175+ | 6.06 грн |
| 475+ | 5.71 грн |
| RN1910FE,LF(CT |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
| RN2405,LXGF(T |
|
Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
кількість в упаковці: 30000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
кількість в упаковці: 30000 шт
товар відсутній
| RN2410(TE85L,F) |
|
Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 2630 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 10.75 грн |
| 85+ | 3.37 грн |
| 100+ | 2.86 грн |
| 500+ | 2.67 грн |
| SSM3J16FS(TE85L,F) |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
на замовлення 1861 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.78 грн |
| 35+ | 8.33 грн |
| 100+ | 7.13 грн |
| 160+ | 6.51 грн |
| 435+ | 6.15 грн |
| 3000+ | 5.97 грн |
| SSM3J327R,LF(B |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| SSM3J328R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 88.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 88.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
товар відсутній
| SSM3J331R,LF |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2805 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 30+ | 9.63 грн |
| 100+ | 8.2 грн |
| 140+ | 7.58 грн |
| 375+ | 7.22 грн |
| 3000+ | 6.95 грн |