Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RN1402(TE85L,F) | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 50 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
товар відсутній |
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RN1406(TE85L,F) | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 510 шт: термін постачання 14-21 дні (днів) |
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RN1411(TE85L,F) | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 1585 шт: термін постачання 14-21 дні (днів) |
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RN1427(TE85L,F) | TOSHIBA |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.8A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 300MHz кількість в упаковці: 12000 шт |
товар відсутній |
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RN1604(TE85L,F) | TOSHIBA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ Mounting: SMD Case: SM6 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 2995 шт: термін постачання 14-21 дні (днів) |
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RN1910FE,LF(CT | TOSHIBA |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ Case: ES6 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 120...700 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.1W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Mounting: SMD кількість в упаковці: 5 шт |
товар відсутній |
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RN2405,LXGF(T | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ Frequency: 200MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SC59 кількість в упаковці: 30000 шт |
товар відсутній |
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RN2410(TE85L,F) | TOSHIBA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 2630 шт: термін постачання 14-21 дні (днів) |
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RN4982FE,LF(CT | TOSHIBA |
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товар відсутній |
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SSM3J16FS(TE85L,F) | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -100mA On-state resistance: 45Ω Type of transistor: P-MOSFET Power dissipation: 0.1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
на замовлення 1861 шт: термін постачання 14-21 дні (днів) |
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SSM3J327R,LF(B | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM3J328R,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 88.4mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM3J331R,LF | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -10A Power dissipation: 2W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 2805 шт: термін постачання 14-21 дні (днів) |
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SSM3J332R,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 144mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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SSM3J334R,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 5.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 2310 шт: термін постачання 14-21 дні (днів) |
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SSM3J355R,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3J35CTC,L3F(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: -20V Drain current: -250mA On-state resistance: 20Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
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SSM3K15AFS,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 0.1A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K15AFS,LF(B | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75 Kind of package: reel; tape Power dissipation: 0.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SC75 Drain-source voltage: 30V Drain current: 0.1A On-state resistance: 6Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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SSM3K15AFU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 16440 шт: термін постачання 14-21 дні (днів) |
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SSM3K16FU(TE85L,F) | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70 Mounting: SMD Case: SC70 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.1A On-state resistance: 15Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
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SSM3K324R,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 109mΩ Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM3K329R,LF(B | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SOT23F Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 289mΩ Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K333R,LF(B | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 6884 шт: термін постачання 14-21 дні (днів) |
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SSM3K339R | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 40V Drain current: 2A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 1.1nC кількість в упаковці: 1 шт |
на замовлення 5985 шт: термін постачання 14-21 дні (днів) |
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SSM3K341R,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Pulsed drain current: 24A Power dissipation: 2.4W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 5178 шт: термін постачання 14-21 дні (днів) |
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SSM3K35MFV,L3F(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 40000 шт |
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SSM3K36FS,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM Mounting: SMD Case: SSM Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 1.52Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 1A Gate-source voltage: ±10V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K37MFV,L3F | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723 Mounting: SMD Drain-source voltage: 20V Drain current: 0.25A On-state resistance: 5.6Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: SOT723 кількість в упаковці: 5 шт |
на замовлення 14225 шт: термін постачання 14-21 дні (днів) |
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SSM3K7002KFU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 38125 шт: термін постачання 14-21 дні (днів) |
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SSM3K72CFS,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.17A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.27nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
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SSM3K72KCT,L3F(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.39nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 50000 шт |
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SSM3K72KFS,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.15W Case: SC75 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 11510 шт: термін постачання 14-21 дні (днів) |
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SSM6J501NU,LF | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 1W Gate charge: 29.9nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -10A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: uDFN6 On-state resistance: 43mΩ кількість в упаковці: 1 шт |
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SSM6J502NU,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 60.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 24.8nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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SSM6J503NU,LF(T | TOSHIBA |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 89.6mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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SSM6J511NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -12V Drain current: -14A On-state resistance: 19.2mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
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SSM6K403TU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±10V On-state resistance: 66mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 280 шт: термін постачання 14-21 дні (днів) |
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SSM6K504NU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 18A Power dissipation: 1.25W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 1678 шт: термін постачання 14-21 дні (днів) |
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SSM6L12TU,LF(T | TOSHIBA | SSM6L12TU Multi channel transistors |
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SSM6N15AFU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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SSM6N35FE,LM(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM6N40TU,LXGF | TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 417 шт: термін постачання 14-21 дні (днів) |
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SSM6N7002CFU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 0.27nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
товар відсутній |
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SSM6N7002KFU,LF(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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T2N7002AK,LM(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 3.2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.35nC Kind of channel: enhanced Pulsed drain current: 0.76A Gate-source voltage: ±20V кількість в упаковці: 30000 шт |
товар відсутній |
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T2N7002BK,LM(T | TOSHIBA |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Pulsed drain current: 1.2A Power dissipation: 0.32W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 3640 шт: термін постачання 14-21 дні (днів) |
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TA75S393F,LF(T | TOSHIBA |
![]() Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA Mounting: SMT Kind of output: open collector Case: SOT25 Kind of package: reel; tape Type of integrated circuit: comparator Number of comparators: 1 Input offset voltage: 5mV Delay time: 1.3µs Kind of comparator: universal Input offset current: 250nA Operating voltage: 1...18V кількість в упаковці: 1 шт |
товар відсутній |
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TB6560AFG(O,8) | TOSHIBA |
![]() Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: QFP64 Output current: 1.5A Output voltage: 4.5...34V Number of channels: 2 Mounting: SMD Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
на замовлення 1242 шт: термін постачання 14-21 дні (днів) |
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TB6560AHQ(O,8) | TOSHIBA |
![]() Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: SIP25 Output current: 3A Output voltage: 4.5...34V Number of channels: 2 Mounting: THT Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
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TB6561FG(O,8,EL) | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP30 Output current: 1.5A Number of channels: 2 Supply voltage: 10...36V DC Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 1 шт |
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TB6568KQ(O,8) | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HSIP7-P-2.54A Output current: 3A Output voltage: 50V Supply voltage: 4.5...48V DC Mounting: THT Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 1158 шт: термін постачання 14-21 дні (днів) |
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TB6600HG | TOSHIBA |
![]() Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: SIP25 Output current: 4.5A Output voltage: 8...42V Number of channels: 2 Mounting: THT Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
на замовлення 117 шт: термін постачання 14-21 дні (днів) |
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TB6612FNG(O,C,8,EL | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP24 Output current: 1A Output voltage: 15V Number of channels: 2 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 1 шт |
на замовлення 996 шт: термін постачання 14-21 дні (днів) |
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TB6614FNG(O,C,EL) | TOSHIBA |
![]() Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V Type of integrated circuit: driver Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP16 Output current: 1.2A Output voltage: 2.5...13.5V Number of channels: 2 Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 2000 шт |
товар відсутній |
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TB6643KQ(O,8) | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HSIP7-P-2.54A Output current: 4.5A Output voltage: 50V Mounting: THT Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 808 шт: термін постачання 14-21 дні (днів) |
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TB67H303HG(O) | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HZIP25-P-1.00F Output current: 8A Output voltage: 50V Mounting: THT Operating temperature: -30...85°C кількість в упаковці: 1 шт |
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TB67H400AHG(O) | TOSHIBA |
![]() Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HZIP25-P-1.00F Output current: 8A Output voltage: 50V Mounting: THT Operating temperature: -20...85°C кількість в упаковці: 1 шт |
товар відсутній |
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TB67S508FTG(Z,EL) | TOSHIBA |
![]() Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC Type of integrated circuit: driver Kind of integrated circuit: 2-phase motor controller Case: VQFN36 Output current: 2.8A Output voltage: 40V Supply voltage: 10...35V DC Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 1 шт |
товар відсутній |
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TBAV70,LM(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 0.9pF Case: SOT23 Max. forward voltage: 1.25V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.32W Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 2840 шт: термін постачання 14-21 дні (днів) |
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RN1402(TE85L,F) |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
товар відсутній
RN1406(TE85L,F) |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 510 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.49 грн |
60+ | 4.96 грн |
100+ | 4.3 грн |
310+ | 3.3 грн |
850+ | 3.13 грн |
RN1411(TE85L,F) |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 1585 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 10.6 грн |
85+ | 3.25 грн |
100+ | 2.76 грн |
500+ | 2.58 грн |
RN1427(TE85L,F) |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
кількість в упаковці: 12000 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.8A; 0.2W; SC59; R1: 2.2kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.8A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 300MHz
кількість в упаковці: 12000 шт
товар відсутній
RN1604(TE85L,F) |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.3W; SM6; R1: 2.2kΩ
Mounting: SMD
Case: SM6
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 2995 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.44 грн |
35+ | 8.03 грн |
100+ | 6.85 грн |
175+ | 5.97 грн |
475+ | 5.62 грн |
RN1910FE,LF(CT |
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Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.1W; ES6; 4.7kΩ
Case: ES6
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 120...700
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.1W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
RN2405,LXGF(T |
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Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
кількість в упаковці: 30000 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 2.2kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC59
кількість в упаковці: 30000 шт
товар відсутній
RN2410(TE85L,F) |
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Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; 4.7kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 2630 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 10.6 грн |
85+ | 3.32 грн |
100+ | 2.82 грн |
500+ | 2.64 грн |
SSM3J16FS(TE85L,F) |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 45Ω
Type of transistor: P-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
на замовлення 1861 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.57 грн |
35+ | 8.21 грн |
100+ | 7.03 грн |
160+ | 6.41 грн |
435+ | 6.06 грн |
3000+ | 5.89 грн |
SSM3J327R,LF(B |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
SSM3J328R,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
SSM3J331R,LF |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2805 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.49 грн |
30+ | 9.49 грн |
100+ | 8.08 грн |
140+ | 7.47 грн |
375+ | 7.12 грн |
3000+ | 6.85 грн |
SSM3J332R,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.19 грн |
35+ | 8.48 грн |
100+ | 7.29 грн |
165+ | 6.24 грн |
450+ | 5.89 грн |
SSM3J334R,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 2310 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.49 грн |
30+ | 10.04 грн |
100+ | 8.52 грн |
130+ | 8 грн |
355+ | 7.56 грн |
3000+ | 7.29 грн |
SSM3J355R,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 52.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 52.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
SSM3J35CTC,L3F(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
SSM3K15AFS,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
товар відсутній
SSM3K15AFS,LF(B |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Kind of package: reel; tape
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC75
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Kind of package: reel; tape
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC75
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
SSM3K15AFU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 16440 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.49 грн |
70+ | 3.98 грн |
100+ | 3.44 грн |
360+ | 2.86 грн |
985+ | 2.71 грн |
SSM3K16FU(TE85L,F) |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
SSM3K324R,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
SSM3K329R,LF(B |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
товар відсутній
SSM3K333R,LF(B |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 6884 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.25 грн |
30+ | 10.67 грн |
100+ | 9.14 грн |
140+ | 7.49 грн |
375+ | 7.08 грн |
SSM3K339R |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 40V
Drain current: 2A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 1.1nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 40V
Drain current: 2A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 1.1nC
кількість в упаковці: 1 шт
на замовлення 5985 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.49 грн |
36+ | 7.76 грн |
100+ | 6.59 грн |
182+ | 5.62 грн |
499+ | 5.36 грн |
SSM3K341R,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 5178 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.45 грн |
10+ | 29.01 грн |
25+ | 24.51 грн |
49+ | 21.26 грн |
133+ | 20.12 грн |
SSM3K35MFV,L3F(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 40000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 40000 шт
товар відсутній
SSM3K36FS,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
SSM3K37MFV,L3F |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
кількість в упаковці: 5 шт
на замовлення 14225 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.99 грн |
60+ | 4.86 грн |
100+ | 4.22 грн |
320+ | 3.21 грн |
880+ | 3.03 грн |
SSM3K7002KFU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 38125 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.53 грн |
60+ | 4.73 грн |
250+ | 4.1 грн |
310+ | 3.31 грн |
855+ | 3.14 грн |
SSM3K72CFS,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.17A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.17A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
товар відсутній
SSM3K72KCT,L3F(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 50000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 50000 шт
товар відсутній
SSM3K72KFS,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 11510 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 7.29 грн |
80+ | 3.61 грн |
250+ | 3.07 грн |
375+ | 2.76 грн |
1025+ | 2.61 грн |
3000+ | 2.57 грн |
SSM6J501NU,LF |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
кількість в упаковці: 1 шт
товар відсутній
SSM6J502NU,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
SSM6J503NU,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
SSM6J511NU,LF(T |
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -14A
On-state resistance: 19.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -14A
On-state resistance: 19.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
товар відсутній
SSM6K403TU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.78 грн |
25+ | 17.33 грн |
81+ | 12.82 грн |
221+ | 12.12 грн |
SSM6K504NU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 1678 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.44 грн |
30+ | 10.86 грн |
100+ | 9.4 грн |
115+ | 9.22 грн |
310+ | 8.7 грн |
3000+ | 8.35 грн |
SSM6N15AFU,LF(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
SSM6N35FE,LM(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
SSM6N40TU,LXGF |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 417 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 17.98 грн |
25+ | 13.14 грн |
89+ | 11.6 грн |
100+ | 11.16 грн |
244+ | 10.98 грн |
500+ | 10.46 грн |
SSM6N7002CFU,LF(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
SSM6N7002KFU,LF(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 6000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 6.24 грн |
65+ | 4.47 грн |
250+ | 3.8 грн |
315+ | 3.3 грн |
860+ | 3.12 грн |
T2N7002AK,LM(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.35nC
Kind of channel: enhanced
Pulsed drain current: 0.76A
Gate-source voltage: ±20V
кількість в упаковці: 30000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.35nC
Kind of channel: enhanced
Pulsed drain current: 0.76A
Gate-source voltage: ±20V
кількість в упаковці: 30000 шт
товар відсутній
T2N7002BK,LM(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3640 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
65+ | 4.45 грн |
100+ | 3.37 грн |
415+ | 2.48 грн |
1140+ | 2.35 грн |
TA75S393F,LF(T |
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Виробник: TOSHIBA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA
Mounting: SMT
Kind of output: open collector
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: comparator
Number of comparators: 1
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: universal
Input offset current: 250nA
Operating voltage: 1...18V
кількість в упаковці: 1 шт
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA
Mounting: SMT
Kind of output: open collector
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: comparator
Number of comparators: 1
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: universal
Input offset current: 250nA
Operating voltage: 1...18V
кількість в упаковці: 1 шт
товар відсутній
TB6560AFG(O,8) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
на замовлення 1242 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 377.52 грн |
3+ | 327.54 грн |
5+ | 247.76 грн |
12+ | 234.58 грн |
TB6560AHQ(O,8) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 3A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 3A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
товар відсутній
TB6561FG(O,8,EL) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP30
Output current: 1.5A
Number of channels: 2
Supply voltage: 10...36V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP30
Output current: 1.5A
Number of channels: 2
Supply voltage: 10...36V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
товар відсутній
TB6568KQ(O,8) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 3A
Output voltage: 50V
Supply voltage: 4.5...48V DC
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 3A
Output voltage: 50V
Supply voltage: 4.5...48V DC
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 1158 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 381.3 грн |
5+ | 255.46 грн |
12+ | 232.82 грн |
TB6600HG |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 4.5A
Output voltage: 8...42V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 4.5A
Output voltage: 8...42V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
на замовлення 117 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 745.57 грн |
3+ | 496.33 грн |
6+ | 452.46 грн |
TB6612FNG(O,C,8,EL |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP24
Output current: 1A
Output voltage: 15V
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP24
Output current: 1A
Output voltage: 15V
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
на замовлення 996 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 192.07 грн |
5+ | 166.96 грн |
9+ | 126.51 грн |
23+ | 119.49 грн |
TB6614FNG(O,C,EL) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V
Type of integrated circuit: driver
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP16
Output current: 1.2A
Output voltage: 2.5...13.5V
Number of channels: 2
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 2000 шт
Category: Motor and PWM drivers
Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V
Type of integrated circuit: driver
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP16
Output current: 1.2A
Output voltage: 2.5...13.5V
Number of channels: 2
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 2000 шт
товар відсутній
TB6643KQ(O,8) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 4.5A
Output voltage: 50V
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 4.5A
Output voltage: 50V
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 808 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 504.3 грн |
4+ | 335.75 грн |
9+ | 305.74 грн |
TB67H303HG(O) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -30...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -30...85°C
кількість в упаковці: 1 шт
товар відсутній
TB67H400AHG(O) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
товар відсутній
TB67S508FTG(Z,EL) |
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Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller
Case: VQFN36
Output current: 2.8A
Output voltage: 40V
Supply voltage: 10...35V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; 2-phase motor controller; VQFN36; 2.8A; 40V; 10÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller
Case: VQFN36
Output current: 2.8A
Output voltage: 40V
Supply voltage: 10...35V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
товар відсутній
TBAV70,LM(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.32W
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.32W
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 2840 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 6.76 грн |
100+ | 5.79 грн |
210+ | 5.11 грн |
500+ | 5.01 грн |
560+ | 4.84 грн |
3000+ | 4.67 грн |