Технічний опис TK60S10N1L,LQ(O Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 60A, Pulsed drain current: 180A, Power dissipation: 180W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 5.14mΩ, Mounting: SMD, Gate charge: 60nC, Kind of channel: enhanced, кількість в упаковці: 2000 шт.
Інші пропозиції TK60S10N1L,LQ(O
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| TK60S10N1L,LQ(O | Виробник : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 180W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.14mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced кількість в упаковці: 2000 шт |
товар відсутній |
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| TK60S10N1L,LQ(O | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 180W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.14mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhanced |
товар відсутній |