| Фото | Назва | Виробник | Інформація |
Доступність |
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SSM3J332R,LF(T | TOSHIBA |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -30V Drain current: -6A On-state resistance: 144mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±12V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3J334R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4A On-state resistance: 136mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
на замовлення 2310 шт: термін постачання 14-21 дні (днів) |
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| SSM3J355R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 52.3mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±10V кількість в упаковці: 5 шт |
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| SSM3J35CTC,L3F(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: -20V Drain current: -250mA On-state resistance: 20Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K15AFS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 0.1A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
товар відсутній |
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| SSM3K15AFS,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75 Kind of package: reel; tape Power dissipation: 0.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SC75 Drain-source voltage: 30V Drain current: 0.1A On-state resistance: 6Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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SSM3K15AFU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 16440 шт: термін постачання 14-21 дні (днів) |
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SSM3K16FU(TE85L,F) | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70 Mounting: SMD Case: SC70 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.1A On-state resistance: 15Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 5 шт |
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SSM3K324R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 109mΩ Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM3K329R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SOT23F Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 289mΩ Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K333R,LF(B | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 6884 шт: термін постачання 14-21 дні (днів) |
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SSM3K339R | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 2A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±12V On-state resistance: 390mΩ Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 19680 шт: термін постачання 14-21 дні (днів) |
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SSM3K341R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: 60V Drain current: 6A On-state resistance: 69mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 5683 шт: термін постачання 14-21 дні (днів) |
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SSM3K35MFV,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 40000 шт |
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SSM3K36FS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM Mounting: SMD Case: SSM Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 1.52Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 1A Gate-source voltage: ±10V кількість в упаковці: 5 шт |
товар відсутній |
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SSM3K37MFV,L3F | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723 Mounting: SMD Drain-source voltage: 20V Drain current: 0.25A On-state resistance: 5.6Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Case: SOT723 кількість в упаковці: 5 шт |
на замовлення 14225 шт: термін постачання 14-21 дні (днів) |
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SSM3K7002KFU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.15W Case: SC70 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 38125 шт: термін постачання 14-21 дні (днів) |
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SSM3K72CFS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.17A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.27nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
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| SSM3K72KCT,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.39nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 50000 шт |
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SSM3K72KFS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.15W Case: SC75 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 11520 шт: термін постачання 14-21 дні (днів) |
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SSM6J501NU,LF | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 1W Gate charge: 29.9nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -10A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: uDFN6 On-state resistance: 43mΩ кількість в упаковці: 1 шт |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 60.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 24.8nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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SSM6J503NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 89.6mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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SSM6J511NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -12V Drain current: -14A On-state resistance: 19.2mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
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SSM6K403TU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Mounting: SMD Case: UF6 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 4.2A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 281 шт: термін постачання 14-21 дні (днів) |
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SSM6K504NU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 4.8nC Kind of channel: enhanced Pulsed drain current: 18A Gate-source voltage: ±20V кількість в упаковці: 5 шт |
на замовлення 1678 шт: термін постачання 14-21 дні (днів) |
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| SSM6L12TU,LF(T | TOSHIBA | SSM6L12TU Multi channel transistors |
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SSM6N15AFU,LF(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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SSM6N35FE,LM(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM6N40TU,LXGF | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1419 шт: термін постачання 14-21 дні (днів) |
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SSM6N7002CFU,LF(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 0.27nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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SSM6N7002KFU,LF(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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T2N7002AK,LM(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 3.2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.35nC Kind of channel: enhanced Pulsed drain current: 0.76A Gate-source voltage: ±20V кількість в упаковці: 30000 шт |
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T2N7002BK,LM(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.4A Pulsed drain current: 1.2A Power dissipation: 0.32W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 0.39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 3700 шт: термін постачання 14-21 дні (днів) |
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TA75S393F,LF(T | TOSHIBA |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA Mounting: SMT Kind of output: open collector Case: SOT25 Kind of package: reel; tape Type of integrated circuit: comparator Number of comparators: 1 Input offset voltage: 5mV Delay time: 1.3µs Kind of comparator: universal Input offset current: 250nA Operating voltage: 1...18V кількість в упаковці: 1 шт |
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TB6560AFG(O,8) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: QFP64 Output current: 1.5A Output voltage: 4.5...34V Number of channels: 2 Mounting: SMD Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
на замовлення 1242 шт: термін постачання 14-21 дні (днів) |
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TB6560AHQ(O,8) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: SIP25 Output current: 3A Output voltage: 4.5...34V Number of channels: 2 Mounting: THT Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
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| TB6561FG(O,8,EL) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP30 Output current: 1.5A Number of channels: 2 Supply voltage: 10...36V DC Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 1 шт |
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TB6568KQ(O,8) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HSIP7-P-2.54A Output current: 3A Output voltage: 50V Supply voltage: 4.5...48V DC Mounting: THT Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 1158 шт: термін постачання 14-21 дні (днів) |
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TB6600HG | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: stepper motor controller Interface: PWM Case: SIP25 Output current: 4.5A Output voltage: 8...42V Number of channels: 2 Mounting: THT Operating temperature: -30...85°C Input voltage: 0...5.5V кількість в упаковці: 1 шт |
на замовлення 123 шт: термін постачання 14-21 дні (днів) |
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TB6612FNG(O,C,8,EL | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP24 Output current: 1A Output voltage: 15V Number of channels: 2 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 1 шт |
на замовлення 999 шт: термін постачання 14-21 дні (днів) |
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TB6614FNG(O,C,EL) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V Type of integrated circuit: driver Kind of integrated circuit: brush motor controller Interface: PWM Case: SSOP16 Output current: 1.2A Output voltage: 2.5...13.5V Number of channels: 2 Mounting: SMD Operating temperature: -20...85°C кількість в упаковці: 2000 шт |
товар відсутній |
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TB6643KQ(O,8) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HSIP7-P-2.54A Output current: 4.5A Output voltage: 50V Mounting: THT Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 808 шт: термін постачання 14-21 дні (днів) |
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| TB67H303HG(O) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HZIP25-P-1.00F Output current: 8A Output voltage: 50V Mounting: THT Operating temperature: -30...85°C кількість в упаковці: 1 шт |
товар відсутній |
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| TB67H400AHG(O) | TOSHIBA |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brush motor controller Interface: PWM Case: HZIP25-P-1.00F Output current: 8A Output voltage: 50V Mounting: THT Operating temperature: -20...85°C кількість в упаковці: 1 шт |
товар відсутній |
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| TB67S508FTG(Z,EL) | TOSHIBA | TB67S508FTG Motor and PWM drivers |
товар відсутній |
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TBAV70,LM(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 0.9pF Case: SOT23 Max. forward voltage: 1.25V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.32W Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 2840 шт: термін постачання 14-21 дні (днів) |
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TBC847B,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.32W; SOT23 Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.15A Kind of package: reel; tape Current gain: 200...450 Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Frequency: 100MHz кількість в упаковці: 51000 шт |
товар відсутній |
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TBC857B,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.32W Case: SOT23 Current gain: 210...475 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz кількість в упаковці: 5 шт |
товар відсутній |
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TBD62003AFWG,EL | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: PSOP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 1 шт |
на замовлення 2034 шт: термін постачання 14-21 дні (днів) |
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TBD62003APG(Z,HZ) | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: DIP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: THT Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 1 шт |
на замовлення 660 шт: термін постачання 14-21 дні (днів) |
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| TBD62004AFWG,EL | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: PSOP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 2000 шт |
товар відсутній |
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TBD62083AFNG(Z,EL) | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; SSOP18; 0.4A; 50V; Ch: 8; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: SSOP18 Output current: 0.4A Output voltage: 50V Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 1 шт |
на замовлення 4115 шт: термін постачання 14-21 дні (днів) |
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TBD62083AFWG | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; PSOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: PSOP18 Output current: 0.5A Output voltage: 2...50V Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 1 шт |
товар відсутній |
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TBD62084AFG(Z,EL) | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: SOP18 Output current: 0.5A Output voltage: 2...50V Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 2000 шт |
товар відсутній |
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TBD62503AFG(Z,EL) | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; SOP16; 0.25A; 50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: SOP16 Output current: 0.25A Output voltage: 50V Number of channels: 7 Mounting: THT Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V кількість в упаковці: 1 шт |
товар відсутній |
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TC4S66F,LF | TOSHIBA |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NO; Ch: 1; SC74A; 3÷18VDC; reel,tape; 30MHz Mounting: SMD Number of channels: 1 Case: SC74A Kind of package: reel; tape Type of integrated circuit: analog switch Bandwidth: 30MHz Output configuration: SPST-NO DC supply current: 10mA Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
на замовлення 2273 шт: термін постачання 14-21 дні (днів) |
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| TC75S57F(TE85L,F) | TOSHIBA |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA Type of integrated circuit: comparator Mounting: SMT Case: SMV Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: push-pull Number of comparators: 1 Input offset voltage: 7mV Kind of comparator: universal Input offset current: 1pA Operating voltage: 1.8...7V кількість в упаковці: 1 шт |
товар відсутній |
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TC7S66F(TE85L,F) | TOSHIBA |
Category: Decoders, multiplexers, switches Description: IC: analog switch; Ch: 1; SMD; SC74A; 2÷12VDC; reel,tape; 25mA Mounting: SMD Number of channels: 1 Case: SC74A Kind of package: reel; tape Type of integrated circuit: analog switch Output configuration: SPST-NO DC supply current: 25mA Supply voltage: 2...12V DC кількість в упаковці: 1 шт |
товар відсутній |
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| TC7SH00F-TE85L | TOSHIBA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SSOP5; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SSOP5 Family: VHC кількість в упаковці: 3000 шт |
товар відсутній |
| SSM3J332R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 144mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -6A
On-state resistance: 144mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 5 шт
товар відсутній
| SSM3J334R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 136mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 136mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 2310 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 30+ | 10.18 грн |
| 100+ | 8.65 грн |
| 130+ | 8.11 грн |
| 355+ | 7.67 грн |
| 3000+ | 7.4 грн |
| SSM3J355R,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 52.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: 24A; 2W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 52.3mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
| SSM3J35CTC,L3F(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
| SSM3K15AFS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
товар відсутній
| SSM3K15AFS,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Kind of package: reel; tape
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC75
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75
Kind of package: reel; tape
Power dissipation: 0.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SC75
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| SSM3K15AFU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 16440 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.67 грн |
| 70+ | 4.04 грн |
| 100+ | 3.49 грн |
| 360+ | 2.9 грн |
| 985+ | 2.75 грн |
| SSM3K16FU(TE85L,F) |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
| SSM3K324R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 109mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| SSM3K329R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23F
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 289mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
товар відсутній
| SSM3K333R,LF(B |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 6884 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.44 грн |
| 30+ | 10.83 грн |
| 100+ | 9.27 грн |
| 140+ | 7.6 грн |
| 375+ | 7.18 грн |
| SSM3K339R |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 19680 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.44 грн |
| 34+ | 8.22 грн |
| 100+ | 7 грн |
| 175+ | 5.9 грн |
| 481+ | 5.57 грн |
| SSM3K341R,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 5683 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.36 грн |
| 10+ | 29.44 грн |
| 25+ | 24.87 грн |
| 48+ | 21.84 грн |
| 132+ | 20.68 грн |
| SSM3K35MFV,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 40000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 40000 шт
товар відсутній
| SSM3K36FS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
кількість в упаковці: 5 шт
товар відсутній
| SSM3K37MFV,L3F |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.25A
On-state resistance: 5.6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Case: SOT723
кількість в упаковці: 5 шт
на замовлення 14225 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.22 грн |
| 60+ | 4.93 грн |
| 100+ | 4.28 грн |
| 320+ | 3.25 грн |
| 880+ | 3.08 грн |
| SSM3K7002KFU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.15W
Case: SC70
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 38125 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.62 грн |
| 60+ | 4.8 грн |
| 250+ | 4.16 грн |
| 310+ | 3.35 грн |
| 855+ | 3.17 грн |
| SSM3K72CFS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.17A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.17A; 150mW; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.17A
On-state resistance: 4.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
товар відсутній
| SSM3K72KCT,L3F(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 50000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 50000 шт
товар відсутній
| SSM3K72KFS,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 150mW; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.15W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 11520 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.39 грн |
| 80+ | 3.67 грн |
| 250+ | 3.11 грн |
| 375+ | 2.81 грн |
| 1000+ | 2.8 грн |
| 1025+ | 2.66 грн |
| 3000+ | 2.61 грн |
| SSM6J501NU,LF |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 1W
Gate charge: 29.9nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: uDFN6
On-state resistance: 43mΩ
кількість в упаковці: 1 шт
товар відсутній
| SSM6J502NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
| SSM6J503NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
| SSM6J511NU,LF(T |
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -14A
On-state resistance: 19.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -14A
On-state resistance: 19.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
товар відсутній
| SSM6K403TU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Mounting: SMD
Case: UF6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.2A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Mounting: SMD
Case: UF6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.2A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 281 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.17 грн |
| 25+ | 17.59 грн |
| 80+ | 13.14 грн |
| 219+ | 12.42 грн |
| SSM6K504NU,LF(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 4.8nC
Kind of channel: enhanced
Pulsed drain current: 18A
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 4.8nC
Kind of channel: enhanced
Pulsed drain current: 18A
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
на замовлення 1678 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.63 грн |
| 30+ | 11.02 грн |
| 100+ | 9.54 грн |
| 115+ | 9.36 грн |
| 310+ | 8.83 грн |
| 3000+ | 8.47 грн |
| SSM6N15AFU,LF(T |
|
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| SSM6N35FE,LM(T |
|
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| SSM6N40TU,LXGF |
|
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 0.5W; UF6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1419 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 18.24 грн |
| 25+ | 13.33 грн |
| 90+ | 11.68 грн |
| 100+ | 11.32 грн |
| 246+ | 10.96 грн |
| 500+ | 10.61 грн |
| SSM6N7002CFU,LF(T |
|
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.17A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 0.27nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| SSM6N7002KFU,LF(T |
|
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 285mW; SC88
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 285mW
Case: SC88
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
| T2N7002AK,LM(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.35nC
Kind of channel: enhanced
Pulsed drain current: 0.76A
Gate-source voltage: ±20V
кількість в упаковці: 30000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 3.2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.35nC
Kind of channel: enhanced
Pulsed drain current: 0.76A
Gate-source voltage: ±20V
кількість в упаковці: 30000 шт
товар відсутній
| T2N7002BK,LM(T |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 3700 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 4.46 грн |
| 100+ | 3.39 грн |
| 420+ | 2.5 грн |
| 1155+ | 2.36 грн |
| TA75S393F,LF(T |
|
Виробник: TOSHIBA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA
Mounting: SMT
Kind of output: open collector
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: comparator
Number of comparators: 1
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: universal
Input offset current: 250nA
Operating voltage: 1...18V
кількість в упаковці: 1 шт
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.3us; 1÷18V; SMT; SOT25; 250nA
Mounting: SMT
Kind of output: open collector
Case: SOT25
Kind of package: reel; tape
Type of integrated circuit: comparator
Number of comparators: 1
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: universal
Input offset current: 250nA
Operating voltage: 1...18V
кількість в упаковці: 1 шт
товар відсутній
| TB6560AFG(O,8) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; QFP64; 1.5A; 4.5÷34V
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: QFP64
Output current: 1.5A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: SMD
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
на замовлення 1242 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 383.04 грн |
| 3+ | 332.33 грн |
| 5+ | 252.27 грн |
| 12+ | 238.01 грн |
| TB6560AHQ(O,8) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 3A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 3A; 4.5÷34V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 3A
Output voltage: 4.5...34V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
товар відсутній
| TB6561FG(O,8,EL) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP30
Output current: 1.5A
Number of channels: 2
Supply voltage: 10...36V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP30; 1.5A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP30
Output current: 1.5A
Number of channels: 2
Supply voltage: 10...36V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
товар відсутній
| TB6568KQ(O,8) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 3A
Output voltage: 50V
Supply voltage: 4.5...48V DC
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 3A
Output voltage: 50V
Supply voltage: 4.5...48V DC
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 1158 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.88 грн |
| 5+ | 259.2 грн |
| 12+ | 236.23 грн |
| TB6600HG |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 4.5A
Output voltage: 8...42V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; stepper motor controller; PWM; SIP25; 4.5A; 8÷42V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: stepper motor controller
Interface: PWM
Case: SIP25
Output current: 4.5A
Output voltage: 8...42V
Number of channels: 2
Mounting: THT
Operating temperature: -30...85°C
Input voltage: 0...5.5V
кількість в упаковці: 1 шт
на замовлення 123 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 756.48 грн |
| 3+ | 510.07 грн |
| 6+ | 464.43 грн |
| TB6612FNG(O,C,8,EL |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP24
Output current: 1A
Output voltage: 15V
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; SSOP24; 1A; 15V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP24
Output current: 1A
Output voltage: 15V
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
на замовлення 999 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.88 грн |
| 5+ | 169.41 грн |
| 9+ | 129.26 грн |
| 23+ | 122.13 грн |
| TB6614FNG(O,C,EL) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V
Type of integrated circuit: driver
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP16
Output current: 1.2A
Output voltage: 2.5...13.5V
Number of channels: 2
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 2000 шт
Category: Motor and PWM drivers
Description: IC: driver; brush motor controller; PWM; SSOP16; 1.2A; 2.5÷13.5V
Type of integrated circuit: driver
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: SSOP16
Output current: 1.2A
Output voltage: 2.5...13.5V
Number of channels: 2
Mounting: SMD
Operating temperature: -20...85°C
кількість в упаковці: 2000 шт
товар відсутній
| TB6643KQ(O,8) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 4.5A
Output voltage: 50V
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HSIP7-P-2.54A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HSIP7-P-2.54A
Output current: 4.5A
Output voltage: 50V
Mounting: THT
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 808 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.68 грн |
| 4+ | 345.29 грн |
| 5+ | 331.61 грн |
| 9+ | 313.78 грн |
| TB67H303HG(O) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -30...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -30...85°C
кількість в упаковці: 1 шт
товар відсутній
| TB67H400AHG(O) |
|
Виробник: TOSHIBA
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brush motor controller; PWM; HZIP25-P-1.00F
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brush motor controller
Interface: PWM
Case: HZIP25-P-1.00F
Output current: 8A
Output voltage: 50V
Mounting: THT
Operating temperature: -20...85°C
кількість в упаковці: 1 шт
товар відсутній
| TBAV70,LM(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.32W
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 0.9pF
Case: SOT23
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.32W
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 2840 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.86 грн |
| 100+ | 5.88 грн |
| 210+ | 5.21 грн |
| 500+ | 5.08 грн |
| 560+ | 4.93 грн |
| 3000+ | 4.74 грн |
| TBC847B,LM(T |
|
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.32W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.15A
Kind of package: reel; tape
Current gain: 200...450
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Frequency: 100MHz
кількість в упаковці: 51000 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.32W; SOT23
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.15A
Kind of package: reel; tape
Current gain: 200...450
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Frequency: 100MHz
кількість в упаковці: 51000 шт
товар відсутній
| TBC857B,LM(T |
|
Виробник: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
кількість в упаковці: 5 шт
товар відсутній
| TBD62003AFWG,EL |
|
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
на замовлення 2034 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.36 грн |
| 7+ | 46.1 грн |
| 25+ | 39.22 грн |
| 31+ | 33.96 грн |
| 85+ | 32.09 грн |
| TBD62003APG(Z,HZ) |
|
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; DIP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: DIP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
на замовлення 660 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.6 грн |
| 5+ | 74.98 грн |
| 18+ | 58.83 грн |
| 49+ | 56.16 грн |
| TBD62004AFWG,EL |
|
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 2000 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 2000 шт
товар відсутній
| TBD62083AFNG(Z,EL) |
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SSOP18; 0.4A; 50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SSOP18
Output current: 0.4A
Output voltage: 50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SSOP18; 0.4A; 50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SSOP18
Output current: 0.4A
Output voltage: 50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
на замовлення 4115 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.48 грн |
| 5+ | 94.42 грн |
| 16+ | 68.64 грн |
| 42+ | 65.07 грн |
| TBD62083AFWG |
|
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
товар відсутній
| TBD62084AFG(Z,EL) |
|
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 2000 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP18; 0.5A; 2÷50V; Ch: 8; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP18
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 2000 шт
товар відсутній
| TBD62503AFG(Z,EL) |
Виробник: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP16; 0.25A; 50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP16
Output current: 0.25A
Output voltage: 50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; SOP16; 0.25A; 50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: SOP16
Output current: 0.25A
Output voltage: 50V
Number of channels: 7
Mounting: THT
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
кількість в упаковці: 1 шт
товар відсутній
| TC4S66F,LF |
|
Виробник: TOSHIBA
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 1; SC74A; 3÷18VDC; reel,tape; 30MHz
Mounting: SMD
Number of channels: 1
Case: SC74A
Kind of package: reel; tape
Type of integrated circuit: analog switch
Bandwidth: 30MHz
Output configuration: SPST-NO
DC supply current: 10mA
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 1; SC74A; 3÷18VDC; reel,tape; 30MHz
Mounting: SMD
Number of channels: 1
Case: SC74A
Kind of package: reel; tape
Type of integrated circuit: analog switch
Bandwidth: 30MHz
Output configuration: SPST-NO
DC supply current: 10mA
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
на замовлення 2273 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.59 грн |
| 12+ | 24.16 грн |
| 25+ | 21.31 грн |
| 53+ | 19.97 грн |
| 100+ | 19.52 грн |
| 145+ | 18.81 грн |
| 250+ | 18.19 грн |
| TC75S57F(TE85L,F) |
|
Виробник: TOSHIBA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA
Type of integrated circuit: comparator
Mounting: SMT
Case: SMV
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: push-pull
Number of comparators: 1
Input offset voltage: 7mV
Kind of comparator: universal
Input offset current: 1pA
Operating voltage: 1.8...7V
кількість в упаковці: 1 шт
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA
Type of integrated circuit: comparator
Mounting: SMT
Case: SMV
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: push-pull
Number of comparators: 1
Input offset voltage: 7mV
Kind of comparator: universal
Input offset current: 1pA
Operating voltage: 1.8...7V
кількість в упаковці: 1 шт
товар відсутній
| TC7S66F(TE85L,F) |
|
Виробник: TOSHIBA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC74A; 2÷12VDC; reel,tape; 25mA
Mounting: SMD
Number of channels: 1
Case: SC74A
Kind of package: reel; tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
DC supply current: 25mA
Supply voltage: 2...12V DC
кількість в упаковці: 1 шт
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 1; SMD; SC74A; 2÷12VDC; reel,tape; 25mA
Mounting: SMD
Number of channels: 1
Case: SC74A
Kind of package: reel; tape
Type of integrated circuit: analog switch
Output configuration: SPST-NO
DC supply current: 25mA
Supply voltage: 2...12V DC
кількість в упаковці: 1 шт
товар відсутній
| TC7SH00F-TE85L |
|
Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SSOP5; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SSOP5
Family: VHC
кількість в упаковці: 3000 шт
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SSOP5; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SSOP5
Family: VHC
кількість в упаковці: 3000 шт
товар відсутній