| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MDNA360UB2200PTED | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Electrical mounting: Press-in PCB Max. off-state voltage: 1.7kV Type of module: IGBT Case: E2-Pack Topology: boost chopper; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 135A Pulsed collector current: 280A |
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| MID100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw |
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| MID145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 700W Technology: NPT Mechanical mounting: screw |
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| MID200-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 180A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 360A Power dissipation: 1.13kW Technology: NPT Mechanical mounting: screw |
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| MID300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 220A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 1.38kW Technology: NPT Mechanical mounting: screw |
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| MID550-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: Y3-DCB Power dissipation: 2.75kW Application: motors Technology: NPT Gate-emitter voltage: ±20V Collector current: 460A Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper |
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| MITA300RF1700PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Mechanical mounting: screw Electrical mounting: Press-Fit Type of module: IGBT Technology: Trench Topology: boost chopper Case: E2-Pack PFP Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Collector current: 310A |
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| MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 190A Case: E3-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
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CPC5620A | IXYS |
Category: Interfaces others - integrated circuits Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube Type of integrated circuit: phone line interface Supply voltage: 2.8...5.5V DC Interface: PLI Mounting: SMD Case: SO32 Integrated circuit features: galvanically isolated Kind of package: tube |
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| UGD6123AG | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3 Version: module Max. forward impulse current: 50A Electrical mounting: THT Mechanical mounting: screw Features of semiconductor devices: high voltage Type of bridge rectifier: three-phase Case: UGD3 Leads: round pin Max. off-state voltage: 7.2kV Load current: 1.8A |
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DSS40-0008D | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 8V Load current: 40A Power dissipation: 155W Semiconductor structure: single diode Case: TO247-3 Kind of package: tube Max. forward impulse current: 600A Max. forward voltage: 0.23V |
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IXTX120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Mounting: THT Drain current: -120A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: PLUS247™ Reverse recovery time: 300ns Drain-source voltage: -200V |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXFA38N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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IXFP38N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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IXFP38N30X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
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IXTH38N30L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
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LDA212STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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DSEI2X61-06C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw Max. off-state voltage: 0.6kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 600A Case: SOT227B Max. forward voltage: 1.8V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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PM1205S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6 Operating temperature: -40...85°C Max. operating current: 0.5A Mounting: SMT Case: DIP6 Switched voltage: max. 500V AC Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Control current max.: 100mA |
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| PM1205STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6 Operating temperature: -40...85°C Max. operating current: 0.5A Mounting: SMT Case: DIP6 Switched voltage: max. 500V AC Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Control current max.: 100mA |
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IXGX320N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 320A Power dissipation: 1.7kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mounting: THT Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: PLUS247™ |
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IXGX55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
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IXGX82N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
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IXGX82N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
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IXFA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
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| IXFA34N65X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
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IXFH34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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| IXFH34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
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| IXFH54N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 70A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 140ns |
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IXFP34N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 164ns |
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IXFP34N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
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IXTA24N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO263 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
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IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 96mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
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IXTH24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
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IXTH34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO247-3 On-state resistance: 96mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 390ns |
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IXTH64N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 64A Power dissipation: 890W Case: TO247-3 On-state resistance: 51mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 450ns |
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IXTP24N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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IXTN90P20P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -90A Pulsed drain current: -270A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 44mΩ Gate charge: 205nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 315ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTP90N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Reverse recovery time: 37ns Drain-source voltage: 55V Drain current: 90A On-state resistance: 8.4mΩ Type of transistor: N-MOSFET Power dissipation: 150W Features of semiconductor devices: thrench gate power mosfet Gate charge: 42nC Kind of channel: enhanced |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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IXTR90P10P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -57A Power dissipation: 190W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns |
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IXTR90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: ISOPLUS247™ Reverse recovery time: 315ns Drain-source voltage: -200V Drain current: -53A On-state resistance: 48mΩ Type of transistor: P-MOSFET Power dissipation: 312W Gate charge: 205nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXTT90P10P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268 Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -90A Power dissipation: 462W Case: TO268 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 144ns |
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IXFK26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns Mounting: THT Case: TO264 Kind of package: tube Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 26A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 780W Polarisation: unipolar Gate charge: 197nC |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFN26N100P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 23A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 390mΩ Pulsed drain current: 65A Power dissipation: 595W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 197nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFX26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 26A Power dissipation: 780W Case: PLUS247™ On-state resistance: 390mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
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IXYH85N120A4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3 Power dissipation: 1.15kW Kind of package: tube Gate charge: 200nC Technology: GenX4™; Trench™; XPT™ Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 85A Pulsed collector current: 520A Turn-on time: 73ns Turn-off time: 990ns Type of transistor: IGBT |
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IXFB170N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 170A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 258nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| DSEI19-06AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 20A; 35ns; TO263AB; Ufmax: 1.5V; 61W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 100A Case: TO263AB Max. forward voltage: 1.5V Power dissipation: 61W Reverse recovery time: 35ns Technology: FRED |
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|
IXFR36N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.2Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
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IXFH18N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 18A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.6Ω Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced |
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IXFK40N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 960W Gate charge: 230nC Polarisation: unipolar Drain current: 40A Kind of channel: enhanced Drain-source voltage: 900V Type of transistor: N-MOSFET On-state resistance: 0.23Ω |
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| MIXA61H1200ED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E2-Pack Application: motors; photovoltaics Power dissipation: 290W Collector current: 60A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 150A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| MIXA81H1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Topology: H-bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Application: motors; photovoltaics Power dissipation: 390W Collector current: 84A Type of module: IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Pulsed collector current: 225A Electrical mounting: Press-in PCB Mechanical mounting: screw |
товар відсутній |
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| MIEB101W1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Type of module: IGBT Technology: Sonic FRD™; SPT+ Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 128A Pulsed collector current: 200A |
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| MIXA151W1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Collector current: 150A Pulsed collector current: 340A Power dissipation: 695W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge Technology: Sonic FRD™; XPT™ Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
товар відсутній |
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| MIXA30W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Case: E2-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 75A Power dissipation: 150W |
товар відсутній |
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| MIXA40W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Case: E2-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 105A Power dissipation: 195W |
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| MIXA60W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
товар відсутній |
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| MIXA80W1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Case: E2-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Power dissipation: 390W |
товар відсутній |
| MDNA360UB2200PTED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.7kV
Type of module: IGBT
Case: E2-Pack
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.7kV
Type of module: IGBT
Case: E2-Pack
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
товар відсутній
| MID100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID145-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID200-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID300-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID550-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Power dissipation: 2.75kW
Application: motors
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 460A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Power dissipation: 2.75kW
Application: motors
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 460A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
товар відсутній
| MITA300RF1700PTED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit
Type of module: IGBT
Technology: Trench
Topology: boost chopper
Case: E2-Pack PFP
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Collector current: 310A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit
Type of module: IGBT
Technology: Trench
Topology: boost chopper
Case: E2-Pack PFP
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Collector current: 310A
товар відсутній
| MIXA61WB1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
товар відсутній
| CPC5620A |
|
Виробник: IXYS
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
товар відсутній
| UGD6123AG |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3
Version: module
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Case: UGD3
Leads: round pin
Max. off-state voltage: 7.2kV
Load current: 1.8A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3
Version: module
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Case: UGD3
Leads: round pin
Max. off-state voltage: 7.2kV
Load current: 1.8A
товар відсутній
| DSS40-0008D |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Power dissipation: 155W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.23V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Power dissipation: 155W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.23V
товар відсутній
| IXTX120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1756.32 грн |
| 2+ | 1542.51 грн |
| 3+ | 1541.79 грн |
| 10+ | 1541.07 грн |
| IXFA38N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.3 грн |
| 3+ | 230.29 грн |
| 10+ | 214.36 грн |
| 50+ | 210.01 грн |
| IXFP38N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 331.45 грн |
| 3+ | 277.36 грн |
| 4+ | 220.88 грн |
| 11+ | 208.57 грн |
| IXFP38N30X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXTH38N30L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товар відсутній
| LDA212STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| DSEI2X61-06C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| PM1205S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
| PM1205STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
| IXGX320N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 320A
Power dissipation: 1.7kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mounting: THT
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1505.19 грн |
| 2+ | 1321.64 грн |
| IXGX50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
товар відсутній
| IXGX55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
| IXGX82N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній
| IXGX82N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товар відсутній
| IXFA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
товар відсутній
| IXFA34N65X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXFH34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.95 грн |
| 3+ | 349.06 грн |
| 7+ | 329.5 грн |
| IXFH34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXFH54N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 140ns
товар відсутній
| IXFP34N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 164ns
товар відсутній
| IXFP34N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXTA24N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTH24N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
| IXTH34N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
товар відсутній
| IXTH64N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
товар відсутній
| IXTP24N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 334.57 грн |
| 3+ | 279.54 грн |
| 4+ | 229.57 грн |
| 11+ | 217.26 грн |
| IXTN90P20P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Pulsed drain current: -270A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Pulsed drain current: -270A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Gate charge: 205nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 315ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTP90N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 37ns
Drain-source voltage: 55V
Drain current: 90A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Reverse recovery time: 37ns
Drain-source voltage: 55V
Drain current: 90A
On-state resistance: 8.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Kind of channel: enhanced
на замовлення 297 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.8 грн |
| 4+ | 111.52 грн |
| 10+ | 89.07 грн |
| 26+ | 84.01 грн |
| IXTR90P10P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -57A
Power dissipation: 190W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -57A
Power dissipation: 190W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
товар відсутній
| IXTR90P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: ISOPLUS247™
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -53A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: ISOPLUS247™
Reverse recovery time: 315ns
Drain-source voltage: -200V
Drain current: -53A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Power dissipation: 312W
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1236.13 грн |
| 3+ | 1084.83 грн |
| IXTT90P10P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 144ns
товар відсутній
| IXFK26N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Case: TO264
Kind of package: tube
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Gate charge: 197nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Mounting: THT
Case: TO264
Kind of package: tube
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 26A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Gate charge: 197nC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1970.01 грн |
| IXFN26N100P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 197nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 197nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3367.57 грн |
| IXFX26N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXYH85N120A4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Power dissipation: 1.15kW
Kind of package: tube
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Power dissipation: 1.15kW
Kind of package: tube
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
товар відсутній
| IXFB170N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 170A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 258nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1896.7 грн |
| 2+ | 1665.62 грн |
| DSEI19-06AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; TO263AB; Ufmax: 1.5V; 61W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO263AB
Max. forward voltage: 1.5V
Power dissipation: 61W
Reverse recovery time: 35ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; TO263AB; Ufmax: 1.5V; 61W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO263AB
Max. forward voltage: 1.5V
Power dissipation: 61W
Reverse recovery time: 35ns
Technology: FRED
товар відсутній
| IXFR36N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH18N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK40N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Gate charge: 230nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 960W
Gate charge: 230nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhanced
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
товар відсутній
| MIXA61H1200ED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Application: motors; photovoltaics
Power dissipation: 290W
Collector current: 60A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E2-Pack
Application: motors; photovoltaics
Power dissipation: 290W
Collector current: 60A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| MIXA81H1200EH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 390W
Collector current: 84A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 225A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W
Topology: H-bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 390W
Collector current: 84A
Type of module: IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Pulsed collector current: 225A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| MIEB101W1200EH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Type of module: IGBT
Technology: Sonic FRD™; SPT+
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 128A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Type of module: IGBT
Technology: Sonic FRD™; SPT+
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 128A
Pulsed collector current: 200A
товар відсутній
| MIXA151W1200EH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Collector current: 150A
Pulsed collector current: 340A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge
Technology: Sonic FRD™; XPT™
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
товар відсутній
| MIXA30W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 75A
Power dissipation: 150W
товар відсутній
| MIXA40W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Power dissipation: 195W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 105A
Power dissipation: 195W
товар відсутній
| MIXA60W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA80W1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Case: E2-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Power dissipation: 390W
товар відсутній