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IXTP26P20P IXTP26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
1+415.6 грн
3+ 347.61 грн
4+ 276.67 грн
9+ 261.77 грн
IXTQ26P20P IXTQ26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
1+400.32 грн
3+ 296.53 грн
8+ 280.22 грн
30+ 275.96 грн
IXTR48P20P IXTR48P20P IXYS IXTR48P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+856.42 грн
2+ 639.18 грн
4+ 604.42 грн
30+ 594.48 грн
IXTT48P20P IXTT48P20P IXYS IXT_48P20P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
товар відсутній
DSA120C150QB DSA120C150QB IXYS DSA120C150QB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; 375W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Power dissipation: 375W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 0.8V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
IXGK55N120A3H1 IXGK55N120A3H1 IXYS IXGK(X)55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
DSEP40-03AS DSEP40-03AS IXYS DSEP40-03AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 40A; 35ns; D2PAK; Ufmax: 1.2V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 40A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.2V
Max. forward impulse current: 340A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
CPC1130N CPC1130N IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
2+235.31 грн
9+ 99.32 грн
Мінімальне замовлення: 2
CPC1130NTR CPC1130NTR IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1705Y CPC1705Y IXYS CPC1705y.pdf Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+534.78 грн
4+ 239.07 грн
10+ 226.3 грн
CPC1706Y CPC1706Y IXYS CPC1706.pdf Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1708J CPC1708J IXYS CPC1708.pdf Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; -40÷85°C; 0.08Ω
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
товар відсутній
CPC1709J CPC1709J IXYS CPC1709.pdf Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; -40÷85°C
Case: ISOPLUS264™
Mounting: THT
On-state resistance: 50mΩ
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-on time: 20ms
Turn-off time: 5ms
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+711.26 грн
3+ 313.56 грн
CPC1718J CPC1718J IXYS CPC1718.pdf Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
CPC1726Y CPC1726Y IXYS CPC1726.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; -40÷85°C; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1727J CPC1727J IXYS CPC1727.pdf Category: DC Solid State Relays
Description: Relay: solid state; 4200mA; max.250VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 4.2A
Switched voltage: max. 250V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
CPC1777J CPC1777J IXYS CPC1777.pdf Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; -40÷85°C; 0.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.5Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1779J CPC1779J IXYS CPC1779.pdf Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.4Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1786J CPC1786J IXYS CPC1786.pdf Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; -40÷85°C; 2Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 0.8A
Switched voltage: max. 1kV DC
Relay variant: current source
On-state resistance: 2Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1788J CPC1788J IXYS CPC1788.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; -40÷85°C
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Case: ISOPLUS264™
Max. operating current: 1.2A
On-state resistance: 1.25Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1048.94 грн
2+ 469.63 грн
5+ 443.38 грн
CPC1030N CPC1030N IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
3+189.47 грн
10+ 84.42 грн
27+ 80.16 грн
Мінімальне замовлення: 3
CPC1030NTR CPC1030NTR IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
товар відсутній
CPC1125N CPC1125N IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CPC1125NTR CPC1125NTR IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
товар відсутній
IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній
IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
IXXH140N65B4 IXXH140N65B4 IXYS IXXH140N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1 IXYS IXXX140N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Case: TO263
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Mounting: SMD
Case: TO263HV
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+263.57 грн
3+ 220.63 грн
5+ 175.22 грн
13+ 166 грн
Мінімальне замовлення: 2
IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.5A
On-state resistance: 30Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTA06N120P IXTA06N120P IXYS IXTA(P)06N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTP06N120P IXTP06N120P IXYS IXTA(P)06N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXDN614CI IXDN614CI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Case: TO220-5
Supply voltage: 4.5...35V
на замовлення 921 шт:
термін постачання 21-30 дні (днів)
2+280.38 грн
3+ 234.1 грн
10+ 217.79 грн
50+ 214.95 грн
Мінімальне замовлення: 2
IXDN614SI IXDN614SI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...35V
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+248.29 грн
5+ 183.74 грн
13+ 173.81 грн
Мінімальне замовлення: 2
IXDN614SITR IXYS media?resourcetype=datasheets&itemid=bbefd2e4-4fe5-4ed7-ad75-4663bafc6c83&filename=ixd-614si Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
IXDN614YI IXDN614YI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 309 шт:
термін постачання 21-30 дні (днів)
2+370.53 грн
3+ 310.01 грн
4+ 234.1 грн
10+ 221.34 грн
Мінімальне замовлення: 2
IXTA120N04T2 IXTA120N04T2 IXYS IXTA(P)120N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
товар відсутній
IXTA220N04T2 IXTA220N04T2 IXYS IXTA(P)220N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
IXTA220N04T2-7 IXTA220N04T2-7 IXYS IXTA220N04T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
товар відсутній
IXTP220N04T2 IXTP220N04T2 IXYS IXTA(P)220N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
2+214.68 грн
3+ 179.48 грн
6+ 143.3 грн
16+ 135.5 грн
Мінімальне замовлення: 2
IXBT12N300HV IXBT12N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300hv_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Power dissipation: 160W
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
товар відсутній
IXGN200N170 IXGN200N170 IXYS IXGN200N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 1.25kW
Type of module: IGBT
Technology: NPT
Collector current: 160A
Pulsed collector current: 1.05kA
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
товар відсутній
DSEI2X101-06A DSEI2X101-06A IXYS DSEI2x101-06A.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+2186.51 грн
2+ 1919.66 грн
DSEI2X101-06P DSEI2X101-06P IXYS DSEI2X101-06P.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1767.85 грн
2+ 1552.19 грн
10+ 1523.1 грн
DSEI2X101-12A DSEI2X101-12A IXYS DSEI2X101-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
1+2812.2 грн
DSEI2X101-12P DSEI2X101-12P IXYS media?resourcetype=datasheets&itemid=b8e449a2-62ed-4a90-8c33-d61c203b87bc&filename=littelfuse%2520power%2520semiconductors%2520dsei2x101-12p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; ECO-PAC 2
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: ECO-PAC 2
Max. forward voltage: 1.61V
Max. forward impulse current: 0.9kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1853.41 грн
2+ 1627.38 грн
3+ 1626.67 грн
DSEI2X121-02A DSEI2X121-02A IXYS DSEI2x121-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Max. off-state voltage: 200V
Load current: 123A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.3kA
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+568.4 грн
4+ 253.26 грн
10+ 239.07 грн
PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+574.51 грн
4+ 255.39 грн
9+ 241.91 грн
PM1205 PM1205 IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
1+572.98 грн
4+ 254.68 грн
9+ 241.2 грн
PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+645.56 грн
3+ 287.31 грн
8+ 271.7 грн
PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Mounting: SMT
Control current max.: 100mA
товар відсутній
IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXTP26P20P IXT_26P20P.pdf
IXTP26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+415.6 грн
3+ 347.61 грн
4+ 276.67 грн
9+ 261.77 грн
IXTQ26P20P IXT_26P20P.pdf
IXTQ26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+400.32 грн
3+ 296.53 грн
8+ 280.22 грн
30+ 275.96 грн
IXTR48P20P IXTR48P20P.pdf
IXTR48P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+856.42 грн
2+ 639.18 грн
4+ 604.42 грн
30+ 594.48 грн
IXTT48P20P IXT_48P20P.pdf
IXTT48P20P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
товар відсутній
DSA120C150QB DSA120C150QB.pdf
DSA120C150QB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60Ax2; 375W; TO3P; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A x2
Power dissipation: 375W
Semiconductor structure: common cathode; double
Case: TO3P
Kind of package: tube
Max. forward impulse current: 1.2kA
Max. forward voltage: 0.8V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
IXGK55N120A3H1 IXGK(X)55N120A3H1.pdf
IXGK55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
DSEP40-03AS DSEP40-03AS.pdf
DSEP40-03AS
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 40A; 35ns; D2PAK; Ufmax: 1.2V; 175W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 40A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.2V
Max. forward impulse current: 340A
Power dissipation: 175W
Technology: HiPerFRED™
Kind of package: reel; tape
товар відсутній
CPC1130N CPC1130N.pdf
CPC1130N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+235.31 грн
9+ 99.32 грн
Мінімальне замовлення: 2
CPC1130NTR CPC1130N.pdf
CPC1130NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1705Y CPC1705y.pdf
CPC1705Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+534.78 грн
4+ 239.07 грн
10+ 226.3 грн
CPC1706Y CPC1706.pdf
CPC1706Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; -40÷85°C; 0.09Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 4A
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 90mΩ
Mounting: THT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1708J CPC1708.pdf
CPC1708J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; -40÷85°C; 0.08Ω
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 60V DC
Case: i4-pac
Max. operating current: 5350mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 80mΩ
Type of relay: solid state
товар відсутній
CPC1709J CPC1709.pdf
CPC1709J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 11000mA; max.60VDC; THT; ISOPLUS264™; -40÷85°C
Case: ISOPLUS264™
Mounting: THT
On-state resistance: 50mΩ
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-on time: 20ms
Turn-off time: 5ms
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Contacts configuration: SPST-NO
Max. operating current: 11A
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 60V DC
Control current max.: 100mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+711.26 грн
3+ 313.56 грн
CPC1718J CPC1718.pdf
CPC1718J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
CPC1726Y CPC1726.pdf
CPC1726Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1000mA; max.250VDC; THT; SIP4; -40÷85°C; 0.75Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 250V DC
Relay variant: current source
On-state resistance: 0.75Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
CPC1727J CPC1727.pdf
CPC1727J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4200mA; max.250VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Max. operating current: 4.2A
Switched voltage: max. 250V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Body dimensions: 19.91x26.16x5.03mm
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Manufacturer series: OptoMOS
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
товар відсутній
CPC1777J CPC1777.pdf
CPC1777J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; -40÷85°C; 0.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.5Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1779J CPC1779.pdf
CPC1779J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; -40÷85°C
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 2A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 0.4Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1786J CPC1786.pdf
CPC1786J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; -40÷85°C; 2Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 0.8A
Switched voltage: max. 1kV DC
Relay variant: current source
On-state resistance: 2Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1788J CPC1788.pdf
CPC1788J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; -40÷85°C
Mounting: THT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Case: ISOPLUS264™
Max. operating current: 1.2A
On-state resistance: 1.25Ω
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Kind of output: MOSFET
Control current max.: 100mA
Turn-off time: 5ms
Turn-on time: 20ms
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1048.94 грн
2+ 469.63 грн
5+ 443.38 грн
CPC1030N CPC1030N.pdf
CPC1030N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
на замовлення 440 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+189.47 грн
10+ 84.42 грн
27+ 80.16 грн
Мінімальне замовлення: 3
CPC1030NTR CPC1030N.pdf
CPC1030NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 30Ω
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 120mA
товар відсутній
CPC1125N CPC1125N.pdf
CPC1125N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
CPC1125NTR CPC1125N.pdf
CPC1125NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
товар відсутній
IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
товар відсутній
IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній
IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
IXXH140N65B4 IXXH140N65B4.pdf
IXXH140N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
товар відсутній
IXXX140N65B4H1 IXXX140N65B4H1.pdf
IXXX140N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
товар відсутній
IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Mounting: SMD
Case: TO263
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Mounting: SMD
Case: TO263HV
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+263.57 грн
3+ 220.63 грн
5+ 175.22 грн
13+ 166 грн
Мінімальне замовлення: 2
IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.75A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Mounting: THT
Case: TO220AB
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.5A
On-state resistance: 30Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
товар відсутній
IXTA06N120P IXTA(P)06N120P.pdf
IXTA06N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXTP06N120P IXTA(P)06N120P.pdf
IXTP06N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO220AB; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
товар відсутній
IXDN614CI IXDD614CI-DTE.pdf
IXDN614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Case: TO220-5
Supply voltage: 4.5...35V
на замовлення 921 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+280.38 грн
3+ 234.1 грн
10+ 217.79 грн
50+ 214.95 грн
Мінімальне замовлення: 2
IXDN614SI IXDD614CI-DTE.pdf
IXDN614SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...35V
Kind of output: non-inverting
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+248.29 грн
5+ 183.74 грн
13+ 173.81 грн
Мінімальне замовлення: 2
IXDN614SITR media?resourcetype=datasheets&itemid=bbefd2e4-4fe5-4ed7-ad75-4663bafc6c83&filename=ixd-614si
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
IXDN614YI IXDD614CI-DTE.pdf
IXDN614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 309 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+370.53 грн
3+ 310.01 грн
4+ 234.1 грн
10+ 221.34 грн
Мінімальне замовлення: 2
IXTA120N04T2 IXTA(P)120N04T2.pdf
IXTA120N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
товар відсутній
IXTA220N04T2 IXTA(P)220N04T2.pdf
IXTA220N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
IXTA220N04T2-7 IXTA220N04T2-7.pdf
IXTA220N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній
IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 74ns
товар відсутній
IXTP220N04T2 IXTA(P)220N04T2.pdf
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+214.68 грн
3+ 179.48 грн
6+ 143.3 грн
16+ 135.5 грн
Мінімальне замовлення: 2
IXBT12N300HV littelfuse_discrete_igbts_bimosfet_ixb_12n300hv_datasheet.pdf.pdf
IXBT12N300HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Turn-on time: 64ns
Turn-off time: 180ns
Type of transistor: IGBT
Power dissipation: 160W
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Collector-emitter voltage: 3kV
товар відсутній
IXGN200N170 IXGN200N170.pdf
IXGN200N170
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 1.25kW
Type of module: IGBT
Technology: NPT
Collector current: 160A
Pulsed collector current: 1.05kA
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
товар відсутній
DSEI2X101-06A DSEI2x101-06A.pdf
DSEI2X101-06A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: SOT227B
Max. forward voltage: 1.25V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2186.51 грн
2+ 1919.66 грн
DSEI2X101-06P DSEI2X101-06P.pdf
DSEI2X101-06P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 96A x2
Case: ECO-PAC 2
Max. forward voltage: 1.17V
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1767.85 грн
2+ 1552.19 грн
10+ 1523.1 грн
DSEI2X101-12A description DSEI2X101-12A.pdf
DSEI2X101-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2812.2 грн
DSEI2X101-12P media?resourcetype=datasheets&itemid=b8e449a2-62ed-4a90-8c33-d61c203b87bc&filename=littelfuse%2520power%2520semiconductors%2520dsei2x101-12p%2520datasheet.pdf
DSEI2X101-12P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; ECO-PAC 2
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: ECO-PAC 2
Max. forward voltage: 1.61V
Max. forward impulse current: 0.9kA
Electrical mounting: THT
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1853.41 грн
2+ 1627.38 грн
3+ 1626.67 грн
DSEI2X121-02A DSEI2x121-02A.pdf
DSEI2X121-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Max. off-state voltage: 200V
Load current: 123A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.3kA
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+568.4 грн
4+ 253.26 грн
10+ 239.07 грн
PM1204S PM1204.pdf
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+574.51 грн
4+ 255.39 грн
9+ 241.91 грн
PM1205 PM1205.pdf
PM1205
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+572.98 грн
4+ 254.68 грн
9+ 241.2 грн
PM1206 PM1206.pdf
PM1206
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; THT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+645.56 грн
3+ 287.31 грн
8+ 271.7 грн
PM1206S PM1206.pdf
PM1206S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
PM1206STR PM1206.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Mounting: SMT
Control current max.: 100mA
товар відсутній
IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
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