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PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 400V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+581.65 грн
4+ 257.71 грн
9+ 243.92 грн
PM1204S PM1204S IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 400V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
1+587.91 грн
4+ 260.62 грн
9+ 246.1 грн
PM1205 PM1205 IXYS PM1205.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
1+586.35 грн
4+ 259.89 грн
9+ 245.37 грн
PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+660.62 грн
3+ 293.28 грн
8+ 277.31 грн
PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXFK220N17T2 IXFK220N17T2 IXYS IXFK(X)220N17T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2119.44 грн
2+ 1860.61 грн
LAA100 LAA100 IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA100L LAA100L IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+514.42 грн
4+ 229.4 грн
11+ 216.33 грн
LAA100LS LAA100LS IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
1+514.42 грн
4+ 229.4 грн
11+ 216.33 грн
LAA100LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LAA100S LAA100S IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA100STR IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LAA108 LAA108 IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
2+268.16 грн
8+ 119.06 грн
20+ 112.52 грн
Мінімальне замовлення: 2
LAA108P LAA108P IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
2+268.16 грн
8+ 119.06 грн
20+ 112.52 грн
Мінімальне замовлення: 2
LAA108PTR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA108S LAA108S IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA108STR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
1+484.71 грн
5+ 212.7 грн
12+ 201.09 грн
LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA120 LAA120 IXYS LAA120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+467.51 грн
5+ 208.35 грн
12+ 196.73 грн
LAA120L LAA120L IXYS LAA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA120LS LAA120LS IXYS LAA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA120LSTR IXYS LAA120L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LAA120S LAA120S IXYS LAA120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
1+467.51 грн
5+ 208.35 грн
12+ 196.73 грн
LAA120STR IXYS LAA120.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+410.44 грн
DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 560A
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: ISOPLUS247™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+295.52 грн
3+ 246.82 грн
5+ 194.55 грн
12+ 184.39 грн
Мінімальне замовлення: 2
DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
2+272.85 грн
3+ 227.22 грн
10+ 212.7 грн
30+ 207.62 грн
Мінімальне замовлення: 2
MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
MIXG490PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
VHF15-08io5 IXYS VHF15.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 21A; Ifsm: 170A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHF15-12io5 IXYS VHF15.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHF25-08IO7 VHF25-08IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1084.35 грн
2+ 800 грн
3+ 755.72 грн
VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+1135.95 грн
2+ 841.38 грн
3+ 794.92 грн
VHF36-12io5 VHF36-12io5 IXYS VHF36.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHFD16-12IO1 IXYS VHFD16.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
VHFD16-16IO1 IXYS VHFD16.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
VHFD29-16IO1 IXYS VHFD29.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
MDI75-12A3 IXYS MDI75-12A3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 370W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MII75-12A3 IXYS MII75-12A3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
товар відсутній
MDI100-12A3 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 90A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MDI145-12A3 IXYS MDI145-12A3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
товар відсутній
VUB116-16NOXT IXYS VUB116-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
товар відсутній
IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2328.96 грн
IXTK20N150 IXTK20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
IXTX20N150 IXTX20N150 IXYS IXTK(X)20N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
MEE300-06DA IXYS MEA-MEK-MEE_300-06DA.PDF Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
товар відсутній
DSEE30-12A DSEE30-12A IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Technology: HiPerFRED™
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Type of diode: rectifying
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1262.6 грн
2+ 1108.53 грн
IXTA140P05T IXTA140P05T IXYS IXT_140P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
IXTP2N65X2 IXTP2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
DH2x61-18A DH2x61-18A IXYS DH2x61-18A.pdf Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.71V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: Sonic FRD™
Case: SOT227B
товар відсутній
IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
2+265.03 грн
3+ 221.42 грн
5+ 180.76 грн
13+ 170.6 грн
Мінімальне замовлення: 2
IXFA36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfa36n60x3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFH36N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 400V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+581.65 грн
4+ 257.71 грн
9+ 243.92 грн
PM1204S PM1204.pdf
PM1204S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 400V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+587.91 грн
4+ 260.62 грн
9+ 246.1 грн
PM1205 PM1205.pdf
PM1205
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+586.35 грн
4+ 259.89 грн
9+ 245.37 грн
PM1206 PM1206.pdf
PM1206
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; THT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: THT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+660.62 грн
3+ 293.28 грн
8+ 277.31 грн
PM1206S PM1206.pdf
PM1206S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
PM1206STR PM1206.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 600V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXFK220N17T2 IXFK(X)220N17T2.pdf
IXFK220N17T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2119.44 грн
2+ 1860.61 грн
LAA100 LAA100.pdf
LAA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA100L LAA100L.pdf
LAA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+514.42 грн
4+ 229.4 грн
11+ 216.33 грн
LAA100LS LAA100L.pdf
LAA100LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+514.42 грн
4+ 229.4 грн
11+ 216.33 грн
LAA100LSTR LAA100L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LAA100S LAA100.pdf
LAA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA100STR LAA100.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
LAA108 LAA108.pdf
LAA108
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+268.16 грн
8+ 119.06 грн
20+ 112.52 грн
Мінімальне замовлення: 2
LAA108P LAA108.pdf
LAA108P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+268.16 грн
8+ 119.06 грн
20+ 112.52 грн
Мінімальне замовлення: 2
LAA108PTR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA108S LAA108.pdf
LAA108S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA108STR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; 8Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA110S LAA110.pdf
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+484.71 грн
5+ 212.7 грн
12+ 201.09 грн
LAA110STR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
LAA120 LAA120.pdf
LAA120
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+467.51 грн
5+ 208.35 грн
12+ 196.73 грн
LAA120L LAA120L.pdf
LAA120L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA120LS LAA120L.pdf
LAA120LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+508.17 грн
4+ 226.5 грн
11+ 213.43 грн
LAA120LSTR LAA120L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LAA120S LAA120.pdf
LAA120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+467.51 грн
5+ 208.35 грн
12+ 196.73 грн
LAA120STR LAA120.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
DPF60C200HB
DPF60C200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. off-state voltage: 200V
Max. forward voltage: 0.91V
Load current: 30A x2
Semiconductor structure: common cathode; double
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: TO247-3
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+410.44 грн
DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 560A; ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 560A
Max. off-state voltage: 200V
Max. forward voltage: 0.88V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Mounting: THT
Case: ISOPLUS247™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+295.52 грн
3+ 246.82 грн
5+ 194.55 грн
12+ 184.39 грн
Мінімальне замовлення: 2
DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward voltage: 1.22V
Load current: 40A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 560A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 215W
Technology: HiPerFRED™ 2nd Gen
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+272.85 грн
3+ 227.22 грн
10+ 212.7 грн
30+ 207.62 грн
Мінімальне замовлення: 2
MIXG490PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
MIXG490PF1200TSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SimBus F
Type of module: IGBT
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
товар відсутній
VHF15-08io5 VHF15.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 21A; Ifsm: 170A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHF15-12io5 VHF15.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 170A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHF25-08IO7 VHF25-ser.pdf
VHF25-08IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1084.35 грн
2+ 800 грн
3+ 755.72 грн
VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Gate current: 25/50mA
Features of semiconductor devices: freewheelling diode
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1135.95 грн
2+ 841.38 грн
3+ 794.92 грн
VHF36-12io5 VHF36.pdf
VHF36-12io5
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: FO-F-A
Leads: connectors 6,3x0,8mm
Gate current: 50/80mA
Features of semiconductor devices: freewheelling diode
товар відсутній
VHFD16-12IO1 VHFD16.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
VHFD16-16IO1 VHFD16.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
VHFD29-16IO1 VHFD29.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 440A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
MDI75-12A3 MDI75-12A3.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 370W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MII75-12A3 MII75-12A3.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
товар відсутній
MDI100-12A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 90A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MDI145-12A3 MDI145-12A3.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
товар відсутній
VUB116-16NOXT VUB116-16NOXT.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
товар відсутній
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Drain-source voltage: 1.5kV
Drain current: 8A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 700W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: linear power mosfet
Gate charge: 250nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Reverse recovery time: 1.7µs
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2328.96 грн
IXTK20N150 IXTK(X)20N150.pdf
IXTK20N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
IXTX20N150 IXTK(X)20N150.pdf
IXTX20N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 1.1µs
Drain-source voltage: 1.5kV
Drain current: 20A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 215nC
Kind of channel: enhanced
товар відсутній
MEE300-06DA MEA-MEK-MEE_300-06DA.PDF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
товар відсутній
DSEE30-12A
DSEE30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Technology: HiPerFRED™
Max. forward voltage: 2.5V
Load current: 30A
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Type of diode: rectifying
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1262.6 грн
2+ 1108.53 грн
IXTA140P05T IXT_140P05T.pdf
IXTA140P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
товар відсутній
IXTP2N65X2 IXTP(Y)2N65X2.pdf
IXTP2N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 137ns
товар відсутній
DH2x61-18A DH2x61-18A.pdf
DH2x61-18A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.71V
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: Sonic FRD™
Case: SOT227B
товар відсутній
IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+265.03 грн
3+ 221.42 грн
5+ 180.76 грн
13+ 170.6 грн
Мінімальне замовлення: 2
IXFA36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfa36n60x3_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFH36N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh36n60x3_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 36A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 180ns
товар відсутній
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