| Фото | Назва | Виробник | Інформація |
Доступність |
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PAA150P | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Kind of output: MOSFET Mounting: SMT Case: DIP8 On-state resistance: 7Ω Operating temperature: -40...85°C Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS |
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| PAA150PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Kind of output: MOSFET Mounting: SMT Case: DIP8 On-state resistance: 7Ω Operating temperature: -40...85°C Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x2.16mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS |
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PAA150S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Kind of output: MOSFET Mounting: SMT Case: DIP8 On-state resistance: 7Ω Operating temperature: -40...85°C Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS |
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| PAA150STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Kind of output: MOSFET Mounting: SMT Case: DIP8 On-state resistance: 7Ω Operating temperature: -40...85°C Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS |
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IXFK78N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 78A Power dissipation: 1.13kW Case: TO264 On-state resistance: 68mΩ Mounting: THT Gate charge: 147nC Kind of package: tube Kind of channel: enhanced |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXFK98N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: TO264 On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFX78N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 78A Power dissipation: 1.13kW Case: PLUS247™ On-state resistance: 68mΩ Mounting: THT Gate charge: 147nC Kind of package: tube Kind of channel: enhanced |
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IXFX98N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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DSB15IM45IB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; 70W; TO262; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A Power dissipation: 70W Semiconductor structure: single diode Case: TO262 Kind of package: tube Max. forward impulse current: 340A Max. forward voltage: 0.55V |
на замовлення 494 шт: термін постачання 21-30 дні (днів) |
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| MID150-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W Case: Y3-DCB Power dissipation: 760W Application: motors Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 200A |
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IXFB210N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Reverse recovery time: 250ns Drain-source voltage: 300V Drain current: 210A On-state resistance: 14.5mΩ Type of transistor: N-MOSFET Power dissipation: 1890W Polarisation: unipolar Kind of package: tube Gate charge: 268nC Technology: HiPerFET™; Polar3™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: PLUS264™ |
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IXFL210N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 16mΩ Mounting: THT Gate charge: 268nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFN210N30P3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 192A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 14.5mΩ Pulsed drain current: 550A Power dissipation: 1.5kW Technology: HiPerFET™; Polar3™ Kind of channel: enhanced Gate charge: 268nC Reverse recovery time: 250ns Gate-source voltage: ±30V Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFN210N30X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 210A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 4.6mΩ Pulsed drain current: 650A Power dissipation: 695W Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate charge: 375nC Reverse recovery time: 190ns Gate-source voltage: ±20V Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFX210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns |
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MMIX1F210N30P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Pulsed drain current: 550A Power dissipation: 520W Case: SMPD Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 268nC Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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MCMA25PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.87V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.25V Load current: 25A Semiconductor structure: double series Gate current: 55/80mA Max. forward impulse current: 0.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA25PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.87V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 40A Max. forward voltage: 1.25V Load current: 25A Semiconductor structure: double series Gate current: 55/80mA Max. forward impulse current: 0.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA35PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.87V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 55A Max. forward voltage: 1.22V Load current: 35A Semiconductor structure: double series Gate current: 78/200mA Max. forward impulse current: 520A Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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MCMA50PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.89V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 79A Max. forward voltage: 1.17V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA Max. forward impulse current: 800A Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCMA50PD1600TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.89V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.6kV Max. load current: 79A Max. forward voltage: 1.17V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA Max. forward impulse current: 800A Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCD132-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Threshold on-voltage: 0.8V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Max. off-state voltage: 0.8kV Max. load current: 300A Max. forward voltage: 1.08V Load current: 130A Semiconductor structure: double series Gate current: 150/200mA Max. forward impulse current: 4.75kA |
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| MCD162-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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CS19-08ho1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 155A |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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CS19-08HO1S-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 155A |
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CS19-08HO1S-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 155A |
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| MWI60-12T6K | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 70A Collector current: 41A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MWI80-12T6K | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 100A Collector current: 56A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: HiPerFRED™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| MIXA225PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A Case: SimBus F Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 250A Pulsed collector current: 500A Application: fans; for pump; for UPS; motors Power dissipation: 1.1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT half-bridge; NTC thermistor |
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| MIXA300PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Power dissipation: 1.5kW Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: SimBus F Technology: Sonic FRD™; XPT™ Application: fans; for pump; for UPS; motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; NTC thermistor Gate-emitter voltage: ±20V Collector current: 325A Pulsed collector current: 650A |
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| MIXA450PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Application: fans; for pump; for UPS; motors Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.1kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT half-bridge; NTC thermistor Case: SimBus F Max. off-state voltage: 1.2kV |
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| VUO160-08NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.1V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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VUO160-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.39V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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| VUO160-14NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.4kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.1V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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VUO160-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.39V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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| VUO160-18NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.8kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.1V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
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| VUO162-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.1V Leads: M6 screws Case: PWS-E flat Mechanical mounting: screw |
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MCC19-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 18A Kind of package: bulk Type of module: thyristor Semiconductor structure: double series Case: TO240AA Gate current: 100/200mA Max. forward voltage: 2.29V Mechanical mounting: screw |
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MCC19-12io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 18A Kind of package: bulk Type of module: thyristor Semiconductor structure: double series Case: TO240AA Gate current: 100/200mA Max. forward voltage: 2.29V Mechanical mounting: screw |
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| CMA60MT1600NHB | IXYS |
Category: Triacs Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A Max. off-state voltage: 1.6kV Max. forward impulse current: 220A Case: TO247-3 Gate current: 60/80mA Kind of package: tube Max. load current: 30A Mounting: THT Type of thyristor: triac |
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| CMA60MT1600NHR | IXYS |
Category: Triacs Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A Max. off-state voltage: 1.6kV Max. forward impulse current: 220A Case: ISO247™ Gate current: 60/80mA Kind of package: tube Max. load current: 30A Mounting: THT Type of thyristor: triac |
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| CMA80MT1600NHB | IXYS |
Category: Triacs Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A Max. off-state voltage: 1.6kV Max. forward impulse current: 325A Case: TO247-3 Gate current: 70/90mA Kind of package: tube Max. load current: 40A Mounting: THT Type of thyristor: triac |
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CMA80MT1600NHR | IXYS |
Category: Triacs Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A Max. off-state voltage: 1.6kV Max. forward impulse current: 325A Case: ISO247™ Gate current: 70/90mA Kind of package: tube Max. load current: 40A Mounting: THT Type of thyristor: triac |
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IXFH16N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFT16N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Power dissipation: 460W Case: TO268 On-state resistance: 0.6Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
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IXFX27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: PLUS247™ On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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DSSK80-0008D | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 8V; 40Ax2; TO247-3; Ufmax: 0.23V Max. off-state voltage: 8V Max. forward voltage: 0.23V Load current: 40A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Power dissipation: 155W Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Case: TO247-3 |
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DSSK80-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 40Ax2; TO247-3; Ufmax: 0.39V Max. off-state voltage: 25V Max. forward voltage: 0.39V Load current: 40A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Power dissipation: 155W Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Case: TO247-3 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DSSK80-0045B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 40Ax2; 155W; TO247-3; tube Load current: 40A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Power dissipation: 155W Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO247-3 Max. off-state voltage: 45V Max. forward voltage: 0.45V |
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DSSK80-006B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 40Ax2; TO247-3; Ufmax: 0.51V Max. off-state voltage: 60V Max. forward voltage: 0.51V Load current: 40A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 600A Power dissipation: 155W Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Case: TO247-3 |
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DSSK40-0015B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; 90W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 15V Load current: 20A x2 Power dissipation: 90W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 350A Max. forward voltage: 0.32V |
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DSSK40-006B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; 150W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.5V Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.5kA Power dissipation: 150W |
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DSSK40-008B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; 115W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 20A x2 Power dissipation: 115W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 500A Max. forward voltage: 0.57V |
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DSSK30-018A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; 90W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 180V Load current: 15A x2 Power dissipation: 90W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 120A Max. forward voltage: 0.72V |
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DSSK20-0045B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 75W; TO220AB; tube Case: TO220AB Max. off-state voltage: 45V Max. forward voltage: 0.45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Power dissipation: 75W Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Mounting: THT |
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DSSK20-015A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 105W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Power dissipation: 105W Heatsink thickness: 1.14...1.39mm |
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DSSK10-018A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; 90W; TO220AB; tube Case: TO220AB Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 120A Max. forward voltage: 0.62V Power dissipation: 90W Max. off-state voltage: 180V Heatsink thickness: 1.14...1.39mm Load current: 5A x2 Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| CMA80E1600HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube Case: TO247AD Mounting: THT Kind of package: tube Max. off-state voltage: 1.6kV Gate current: 200mA Max. load current: 126A Type of thyristor: thyristor Max. forward impulse current: 780A Load current: 80A |
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IXFH10N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 380W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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PLB150S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: SMT On-state resistance: 7Ω Turn-on time: 1ms Turn-off time: 2.5ms Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Case: DIP6 |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| PAA150P |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
товар відсутній
| PAA150PTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
товар відсутній
| PAA150S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
товар відсутній
| PAA150STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Kind of output: MOSFET
Mounting: SMT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
товар відсутній
| IXFK78N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1207.09 грн |
| 3+ | 1059.89 грн |
| IXFK98N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX78N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX98N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1269.63 грн |
| 2+ | 850.81 грн |
| 3+ | 804.35 грн |
| DSB15IM45IB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 70W; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Power dissipation: 70W
Semiconductor structure: single diode
Case: TO262
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; 70W; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Power dissipation: 70W
Semiconductor structure: single diode
Case: TO262
Kind of package: tube
Max. forward impulse current: 340A
Max. forward voltage: 0.55V
на замовлення 494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.83 грн |
| 7+ | 58.8 грн |
| 10+ | 51.54 грн |
| 19+ | 47.19 грн |
| 50+ | 44.28 грн |
| 250+ | 43.56 грн |
| MID150-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W
Case: Y3-DCB
Power dissipation: 760W
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W
Case: Y3-DCB
Power dissipation: 760W
Application: motors
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 200A
товар відсутній
| IXFB210N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 268nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 14.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 268nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PLUS264™
товар відсутній
| IXFL210N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1941.98 грн |
| IXFN210N30P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate charge: 268nC
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2692.5 грн |
| IXFN210N30X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2639.33 грн |
| IXFX210N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
товар відсутній
| MMIX1F210N30P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2822.27 грн |
| MCMA25PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA25PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Max. forward voltage: 1.25V
Load current: 25A
Semiconductor structure: double series
Gate current: 55/80mA
Max. forward impulse current: 0.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA35PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1680.07 грн |
| 2+ | 1475.13 грн |
| 36+ | 1448.27 грн |
| MCMA50PD1200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 800A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 800A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCMA50PD1600TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 800A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.89V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. load current: 79A
Max. forward voltage: 1.17V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 800A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD132-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Threshold on-voltage: 0.8V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Max. load current: 300A
Max. forward voltage: 1.08V
Load current: 130A
Semiconductor structure: double series
Gate current: 150/200mA
Max. forward impulse current: 4.75kA
товар відсутній
| MCD162-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| CS19-08ho1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.85 грн |
| CS19-08HO1S-TRL |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
товар відсутній
| CS19-08HO1S-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
товар відсутній
| MWI60-12T6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 70A
Collector current: 41A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 70A
Collector current: 41A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MWI80-12T6K |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 100A
Collector current: 56A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: HiPerFRED™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 100A
Collector current: 56A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: HiPerFRED™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 270W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MIXA225PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| MIXA300PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Power dissipation: 1.5kW
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: Sonic FRD™; XPT™
Application: fans; for pump; for UPS; motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Power dissipation: 1.5kW
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: Sonic FRD™; XPT™
Application: fans; for pump; for UPS; motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
товар відсутній
| MIXA450PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Case: SimBus F
Max. off-state voltage: 1.2kV
товар відсутній
| VUO160-08NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| VUO160-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| VUO160-14NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| VUO160-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| VUO160-18NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
товар відсутній
| VUO162-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E flat
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.1V
Leads: M6 screws
Case: PWS-E flat
Mechanical mounting: screw
товар відсутній
| MCC19-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 18A
Kind of package: bulk
Type of module: thyristor
Semiconductor structure: double series
Case: TO240AA
Gate current: 100/200mA
Max. forward voltage: 2.29V
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 18A
Kind of package: bulk
Type of module: thyristor
Semiconductor structure: double series
Case: TO240AA
Gate current: 100/200mA
Max. forward voltage: 2.29V
Mechanical mounting: screw
товар відсутній
| MCC19-12io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 18A
Kind of package: bulk
Type of module: thyristor
Semiconductor structure: double series
Case: TO240AA
Gate current: 100/200mA
Max. forward voltage: 2.29V
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 18A; TO240AA; Ufmax: 2.29V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 18A
Kind of package: bulk
Type of module: thyristor
Semiconductor structure: double series
Case: TO240AA
Gate current: 100/200mA
Max. forward voltage: 2.29V
Mechanical mounting: screw
товар відсутній
| CMA60MT1600NHB |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
товар відсутній
| CMA60MT1600NHR |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
товар відсутній
| CMA80MT1600NHB |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
товар відсутній
| CMA80MT1600NHR |
|
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
товар відсутній
| IXFH16N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFT16N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX27N80Q |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1457.26 грн |
| 2+ | 1279.85 грн |
| 10+ | 1262.43 грн |
| 30+ | 1230.49 грн |
| DSSK80-0008D |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40Ax2; TO247-3; Ufmax: 0.23V
Max. off-state voltage: 8V
Max. forward voltage: 0.23V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40Ax2; TO247-3; Ufmax: 0.23V
Max. off-state voltage: 8V
Max. forward voltage: 0.23V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
| DSSK80-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 40Ax2; TO247-3; Ufmax: 0.39V
Max. off-state voltage: 25V
Max. forward voltage: 0.39V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 40Ax2; TO247-3; Ufmax: 0.39V
Max. off-state voltage: 25V
Max. forward voltage: 0.39V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 435.46 грн |
| 3+ | 322.32 грн |
| DSSK80-0045B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40Ax2; 155W; TO247-3; tube
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 40Ax2; 155W; TO247-3; tube
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO247-3
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
товар відсутній
| DSSK80-006B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 40Ax2; TO247-3; Ufmax: 0.51V
Max. off-state voltage: 60V
Max. forward voltage: 0.51V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 40Ax2; TO247-3; Ufmax: 0.51V
Max. off-state voltage: 60V
Max. forward voltage: 0.51V
Load current: 40A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 600A
Power dissipation: 155W
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
| DSSK40-0015B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 350A
Max. forward voltage: 0.32V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 350A
Max. forward voltage: 0.32V
товар відсутній
| DSSK40-006B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; 150W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.5kA
Power dissipation: 150W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 20Ax2; 150W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.5V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.5kA
Power dissipation: 150W
товар відсутній
| DSSK40-008B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 20A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 500A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 20Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 20A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 500A
Max. forward voltage: 0.57V
товар відсутній
| DSSK30-018A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.72V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 15A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 120A
Max. forward voltage: 0.72V
товар відсутній
| DSSK20-0045B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 75W; TO220AB; tube
Case: TO220AB
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; 75W; TO220AB; tube
Case: TO220AB
Max. off-state voltage: 45V
Max. forward voltage: 0.45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Power dissipation: 75W
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Mounting: THT
товар відсутній
| DSSK20-015A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 105W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Power dissipation: 105W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; 105W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Power dissipation: 105W
Heatsink thickness: 1.14...1.39mm
товар відсутній
| DSSK10-018A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; 90W; TO220AB; tube
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 120A
Max. forward voltage: 0.62V
Power dissipation: 90W
Max. off-state voltage: 180V
Heatsink thickness: 1.14...1.39mm
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; 90W; TO220AB; tube
Case: TO220AB
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 120A
Max. forward voltage: 0.62V
Power dissipation: 90W
Max. off-state voltage: 180V
Heatsink thickness: 1.14...1.39mm
Load current: 5A x2
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.6 грн |
| 4+ | 116.15 грн |
| 10+ | 87.11 грн |
| 26+ | 82.76 грн |
| CMA80E1600HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Gate current: 200mA
Max. load current: 126A
Type of thyristor: thyristor
Max. forward impulse current: 780A
Load current: 80A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 200mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.6kV
Gate current: 200mA
Max. load current: 126A
Type of thyristor: thyristor
Max. forward impulse current: 780A
Load current: 80A
товар відсутній
| IXFH10N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.58 грн |
| 3+ | 360.8 грн |
| 7+ | 341.2 грн |
| 30+ | 331.03 грн |
| PLB150S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 7Ω
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: SMT
On-state resistance: 7Ω
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Case: DIP6
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 536.31 грн |
| 4+ | 238.84 грн |
| 10+ | 225.77 грн |