| Фото | Назва | Виробник | Інформація |
Доступність |
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DSI30-08AS-TUB | IXYS |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Max. off-state voltage: 0.8kV Load current: 30A Max. forward impulse current: 255A Case: D2PAK Kind of package: tube Max. forward voltage: 1.25V Mounting: SMD Semiconductor structure: single diode Power dissipation: 160W Type of diode: rectifying |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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DSI30-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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DSI30-16AS | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 428 шт: термін постачання 21-30 дні (днів) |
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DSI30-16AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Power dissipation: 160W Semiconductor structure: single diode Case: D2PAK Kind of package: tube Max. forward impulse current: 255A Max. forward voltage: 1.25V |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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| MG06100S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S |
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| MG06150S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S |
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| MG06300D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw |
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| MG06400D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 400A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Mechanical mounting: screw |
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| MG0675S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 75A Case: package S Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw |
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LOC211P | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16 Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Type of optocoupler: optocoupler Case: SO16 |
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| LOC211PTR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A Mounting: SMD Number of channels: 2 Insulation voltage: 3.75kV Trigger current: 1A Type of optocoupler: optocoupler Case: SO16 |
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IXFB82N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™ Drain-source voltage: 600V Drain current: 82A Case: PLUS264™ Polarisation: unipolar On-state resistance: 75mΩ Power dissipation: 1.25kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET |
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IXFH42N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.185Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
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IXFL82N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 55A Power dissipation: 625W Case: ISOPLUS264™ On-state resistance: 80mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFN82N60P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 72A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 75mΩ Pulsed drain current: 200A Power dissipation: 1.04kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±40V Mechanical mounting: screw |
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| CPC1972GSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
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MCC95-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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MCMA50P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.2kV Max. forward voltage: 1.48V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MCMA50P1600TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.48V Load current: 50A Semiconductor structure: double series Gate current: 78/200mA |
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MDMA50P1200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 1.2kV Max. forward voltage: 1.09V Load current: 50A Semiconductor structure: double series |
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MDMA50P1600TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.09V Load current: 50A Semiconductor structure: double series |
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IXFK520N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264 Type of transistor: N-MOSFET Mounting: THT Case: TO264 On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A |
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IXFX520N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™ Type of transistor: N-MOSFET Mounting: THT Case: PLUS247™ On-state resistance: 2.2mΩ Kind of package: tube Power dissipation: 1.25kW Polarisation: unipolar Drain-source voltage: 75V Features of semiconductor devices: thrench gate power mosfet Gate charge: 545nC Kind of channel: enhanced Drain current: 520A |
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IXFN50N120SK | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 48A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 50mΩ Technology: SiC Kind of channel: enhanced Gate charge: 115nC Reverse recovery time: 54ns Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXGH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 55ns Turn-off time: 485ns |
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IXGK50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: TO264 |
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IXYH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 750W Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Case: TO247-3 |
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IXYH50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 210A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 625W Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Case: TO247-3 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXYR50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 32A Pulsed collector current: 210A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 290W Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Case: PLUS247™ |
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MCO100-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 101A Case: SOT227B Max. forward voltage: 1.74V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MDD26-18N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 36A Case: TO240AA Max. forward voltage: 1.05V Max. forward impulse current: 0.65kA Electrical mounting: screw Mechanical mounting: screw |
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IXFA130N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IXFH230N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 230A Power dissipation: 650W Case: TO247-3 On-state resistance: 4.7mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 82ns |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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IXFP130N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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| IXTA130N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns |
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| IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 77ns |
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| IXTA130N10T7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns |
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IXTP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 9.1mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 67ns |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| MDD810-16N2 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 807A Case: ComPack Max. forward voltage: 1.24V Max. forward impulse current: 17.3kA Electrical mounting: screw Mechanical mounting: screw |
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IXDD630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
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DAA10EM1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.8kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: TO263ABHV Max. forward voltage: 1.14V Max. forward impulse current: 130A Power dissipation: 100W Kind of package: tube |
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DAA10P1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.8kV Load current: 10A Semiconductor structure: double series Features of semiconductor devices: avalanche breakdown effect Case: TO263ABHV Max. forward voltage: 1.53V Max. forward impulse current: 150A Power dissipation: 100W Kind of package: tube |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| DMA10P1600PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W Mounting: SMD Power dissipation: 100W Kind of package: tube Type of diode: rectifying Case: TO263ABHV Max. off-state voltage: 1.6kV Max. forward voltage: 1.21V Load current: 10A Semiconductor structure: double series Max. forward impulse current: 100A |
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| DMA10P1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W Type of diode: rectifying Power dissipation: 100W Max. off-state voltage: 1.8kV Max. forward impulse current: 100A Semiconductor structure: double series Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.21V Load current: 10A |
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IXFQ120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO3P On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
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IXFT42N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 42A Power dissipation: 830W Case: TO268 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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PBB150 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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PBB150P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Operating temperature: -40...85°C Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Manufacturer series: OptoMOS Insulation voltage: 3.75kV Case: DIP8 Turn-on time: 2.5ms Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 250mA Turn-off time: 2.5ms Control current max.: 50mA On-state resistance: 7Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Contacts configuration: SPST-NC x2 |
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| PBB150PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Operating temperature: -40...85°C Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Manufacturer series: OptoMOS Insulation voltage: 3.75kV Case: DIP8 Turn-on time: 2.5ms Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 250mA Turn-off time: 2.5ms Control current max.: 50mA On-state resistance: 7Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Contacts configuration: SPST-NC x2 |
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PBB150S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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| PBB150STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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MEK150-04DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V Max. off-state voltage: 0.4kV Max. forward voltage: 1.4V Load current: 150A Semiconductor structure: common cathode Max. forward impulse current: 1.2kA Case: TO240AA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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IXFK150N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Mounting: THT Drain-source voltage: 300V Drain current: 150A On-state resistance: 19mΩ Type of transistor: N-MOSFET Case: TO264 Power dissipation: 1.3kW Polarisation: unipolar Kind of package: tube Gate charge: 197nC Kind of channel: enhanced |
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IXFK150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Mounting: THT Reverse recovery time: 167ns Drain-source voltage: 300V Drain current: 150A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET Case: TO264 Power dissipation: 890W Polarisation: unipolar Kind of package: tube Gate charge: 254nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V |
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IXTP86N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 86A Power dissipation: 550W Case: TO220AB On-state resistance: 33mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 140ns |
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IXTA460P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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IXTH460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET |
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IXTP460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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| MCD250-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
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CPC2907B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS Mounting: SMT Manufacturer series: OptoMOS On-state resistance: 0.15Ω Turn-on time: 2.5ms Turn-off time: 0.25ms Body dimensions: 21.08x10.16x3.3mm Kind of output: MOSFET Insulation voltage: 4kV Contacts configuration: SPST-NO x2 Max. operating current: 2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Operating temperature: -40...85°C Case: PowerSO8 |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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| DSI30-08AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Max. off-state voltage: 0.8kV
Load current: 30A
Max. forward impulse current: 255A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.25V
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 160W
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Max. off-state voltage: 0.8kV
Load current: 30A
Max. forward impulse current: 255A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.25V
Mounting: SMD
Semiconductor structure: single diode
Power dissipation: 160W
Type of diode: rectifying
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.46 грн |
| DSI30-12AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.63 грн |
| 8+ | 119.49 грн |
| 20+ | 112.25 грн |
| DSI30-16AS |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 428 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.81 грн |
| 3+ | 181.05 грн |
| 6+ | 149.91 грн |
| 16+ | 141.94 грн |
| 250+ | 136.87 грн |
| DSI30-16AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Power dissipation: 160W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 255A
Max. forward voltage: 1.25V
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.98 грн |
| 7+ | 123.11 грн |
| MG06100S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
товар відсутній
| MG06150S-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
товар відсутній
| MG06300D-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
товар відсутній
| MG06400D-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 400A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
товар відсутній
| MG0675S-BN4MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
товар відсутній
| LOC211P |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Case: SO16
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; SO16
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
| LOC211PTR |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; SO16; 1A
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
Trigger current: 1A
Type of optocoupler: optocoupler
Case: SO16
товар відсутній
| IXFB82N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Polarisation: unipolar
On-state resistance: 75mΩ
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
товар відсутній
| IXFH42N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFL82N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1821.05 грн |
| 2+ | 1599 грн |
| IXFN82N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 72A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 200A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
| CPC1972GSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
| MCC95-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2342.01 грн |
| 2+ | 2055.96 грн |
| MCMA50P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1789.07 грн |
| 2+ | 1570.76 грн |
| 10+ | 1562.07 грн |
| MCMA50P1600TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.48V
Load current: 50A
Semiconductor structure: double series
Gate current: 78/200mA
товар відсутній
| MDMA50P1200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
товар відсутній
| MDMA50P1600TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.09V
Load current: 50A
Semiconductor structure: double series
товар відсутній
| IXFK520N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
товар відсутній
| IXFX520N075T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Case: PLUS247™
On-state resistance: 2.2mΩ
Kind of package: tube
Power dissipation: 1.25kW
Polarisation: unipolar
Drain-source voltage: 75V
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Drain current: 520A
товар відсутній
| IXFN50N120SK |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 115nC
Reverse recovery time: 54ns
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 115nC
Reverse recovery time: 54ns
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4946.85 грн |
| IXGH50N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
товар відсутній
| IXGK50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: TO264
товар відсутній
| IXYH50N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 750W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
товар відсутній
| IXYH50N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 625W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 625W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: TO247-3
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 985 грн |
| 2+ | 645.25 грн |
| 4+ | 609.76 грн |
| IXYR50N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 290W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 32A
Pulsed collector current: 210A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 290W
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Case: PLUS247™
товар відсутній
| MCO100-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MDD26-18N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXFA130N10T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.21 грн |
| 3+ | 199.88 грн |
| 10+ | 186.84 грн |
| 50+ | 184.67 грн |
| IXFH230N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.38 грн |
| 3+ | 386.71 грн |
| 6+ | 365.71 грн |
| 10+ | 363.54 грн |
| 30+ | 354.85 грн |
| IXFP130N10T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.9 грн |
| 3+ | 242.6 грн |
| 5+ | 198.43 грн |
| 12+ | 187.56 грн |
| IXTA130N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTA130N10T-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTA130N10T7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTP130N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.11 грн |
| 3+ | 171.63 грн |
| 7+ | 140.49 грн |
| 17+ | 133.25 грн |
| MDD810-16N2 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 807A
Case: ComPack
Max. forward voltage: 1.24V
Max. forward impulse current: 17.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 807A
Case: ComPack
Max. forward voltage: 1.24V
Max. forward impulse current: 17.3kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXDD630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
| DAA10EM1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
товар відсутній
| DAA10P1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.53V
Max. forward impulse current: 150A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.53V
Max. forward impulse current: 150A
Power dissipation: 100W
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 288.56 грн |
| 3+ | 236.81 грн |
| 5+ | 202.77 грн |
| 12+ | 191.91 грн |
| DMA10P1600PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Mounting: SMD
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Case: TO263ABHV
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Mounting: SMD
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Case: TO263ABHV
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 100A
товар відсутній
| DMA10P1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Type of diode: rectifying
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Max. forward impulse current: 100A
Semiconductor structure: double series
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Type of diode: rectifying
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Max. forward impulse current: 100A
Semiconductor structure: double series
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
товар відсутній
| IXFQ120N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO3P
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO3P
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
| IXFT42N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| PBB150 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PBB150P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
товар відсутній
| PBB150PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
товар відсутній
| PBB150S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PBB150STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| MEK150-04DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.4V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 1.2kA
Case: TO240AA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.4V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 1.2kA
Case: TO240AA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| IXFK150N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Case: TO264
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Mounting: THT
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Case: TO264
Power dissipation: 1.3kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 197nC
Kind of channel: enhanced
товар відсутній
| IXFK150N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Reverse recovery time: 167ns
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Case: TO264
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 254nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Reverse recovery time: 167ns
Drain-source voltage: 300V
Drain current: 150A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Case: TO264
Power dissipation: 890W
Polarisation: unipolar
Kind of package: tube
Gate charge: 254nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IXTP86N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO220AB
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO220AB
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
товар відсутній
| IXTA460P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| IXTH460P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
товар відсутній
| IXTP460P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| MCD250-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| CPC2907B |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Case: PowerSO8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Case: PowerSO8
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1086.39 грн |
| 2+ | 480.13 грн |
| 5+ | 453.34 грн |