| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MCNA220P2200YA | IXYS |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V Case: Y4-M6 Load current: 220A Max. forward voltage: 1.53V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA650P2200CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw Case: ComPack Load current: 650A Max. forward voltage: 1.59V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 300/400mA |
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MDNA140P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: diode Case: SimBus F Max. off-state voltage: 2.2kV Load current: 300A Semiconductor structure: double series Max. forward impulse current: 8kA |
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| MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 380A Case: Y1-CU Max. forward voltage: 0.93V Max. forward impulse current: 11kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: diode Case: SimBus F Max. off-state voltage: 2.2kV Load current: 425A Semiconductor structure: double series Max. forward impulse current: 10kA |
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| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: diode Case: SimBus F Max. off-state voltage: 2.2kV Load current: 600A Semiconductor structure: double series Max. forward impulse current: 15kA |
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| MDNA700P2200CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 700A Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
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| MCD255-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 450A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD255-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 450A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD255-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 450A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD255-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 450A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD310-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD310-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD310-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD310-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCD310-22io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y1-CU Max. forward voltage: 1.06V Max. forward impulse current: 9.6kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 520A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y1-CU Max. forward voltage: 1.06V Max. forward impulse current: 9.6kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 520A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y1-CU Max. forward voltage: 1.06V Max. forward impulse current: 9.6kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 520A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk Max. off-state voltage: 1.2kV Load current: 49A Semiconductor structure: double series Case: TO240AA Features of semiconductor devices: Kelvin terminal Max. forward voltage: 1.34V Max. load current: 77A Max. forward impulse current: 1.15kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Gate current: 100/200mA |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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MCD44-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk Case: TO240AA Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.6kV Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 100A Max. forward voltage: 1.24V Load current: 60A Max. forward impulse current: 1.5kA |
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MCD56-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Max. off-state voltage: 1.2kV Load current: 85A Semiconductor structure: double series Case: TO240AA Features of semiconductor devices: Kelvin terminal Max. forward voltage: 1.34V Max. load current: 133A Max. forward impulse current: 1.7kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Gate current: 150/200mA |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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MCD72-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD72-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO550-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 590A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 2.1mΩ Pulsed drain current: 2.36kA Power dissipation: 2.2kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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VMO580-02F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 580A Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 3.8mΩ Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.75µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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VMO60-05F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 60A Case: TO240AA Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 240A Power dissipation: 590W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 405nC Reverse recovery time: 250ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO650-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 690A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.8mΩ Pulsed drain current: 2.78kA Power dissipation: 2.5kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.3µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| VMO1200-01F | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 1.22kA Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 1.25mΩ Technology: PolarHT™ Kind of channel: enhanced Gate charge: 1.71µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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IXFH130N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO247-3 On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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IXFK88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264 Mounting: THT Kind of package: tube Power dissipation: 600W Polarisation: unipolar Gate charge: 180nC Kind of channel: enhanced Case: TO264 Drain-source voltage: 300V Drain current: 88A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IXFT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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IXTH88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXTQ88N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTT88N30P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXGK120N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
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IXGK120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 830W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 122ns Turn-off time: 885ns |
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IXYK120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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IXYX120N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 800A Mounting: THT Gate charge: 400nC Kind of package: tube Turn-on time: 84ns Turn-off time: 826ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXYX120N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 1.5kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 105ns Turn-off time: 346ns |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| MMIX1G120N120A3V1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 105A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 700A Mounting: SMD Gate charge: 420nC Kind of package: tube Turn-on time: 105ns Turn-off time: 1365ns |
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DSSS35-008AR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W Mounting: THT Case: ISOPLUS247™ Max. off-state voltage: 80V Max. forward voltage: 0.68V Load current: 35A x2 Semiconductor structure: double series Max. forward impulse current: 600A Power dissipation: 190W Kind of package: tube Type of diode: Schottky rectifying |
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| IXYH16N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3 Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 64A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 14ns Turn-off time: 260ns Features of semiconductor devices: high voltage |
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IXYH16N250CV1HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 126A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 39ns Turn-off time: 541ns Features of semiconductor devices: high voltage |
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
на замовлення 2020 шт: термін постачання 21-30 дні (днів) |
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IX4340UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
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IXTA26P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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IXTH26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
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IXTH48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 85mΩ Drain current: -48A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 462W |
на замовлення 288 шт: термін постачання 21-30 дні (днів) |
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IXTP26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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IXTQ26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Case: TO3P Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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IXTR48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns Mounting: THT Case: ISOPLUS247™ Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 93mΩ Drain current: -30A Drain-source voltage: -200V Gate charge: 103nC Reverse recovery time: 260ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 190W |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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| MCNA220P2200YA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA650P2200CA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
товар відсутній
| MDNA140P2200TG |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
товар відсутній
| MDNA380P2200KC |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
товар відсутній
| MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: diode
Case: SimBus F
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
товар відсутній
| MDNA700P2200CC |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MCD255-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD255-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD255-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD255-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 450A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-22io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD312-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD312-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD312-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 520A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Semiconductor structure: double series
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Max. forward voltage: 1.34V
Max. load current: 77A
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 49A
Semiconductor structure: double series
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Max. forward voltage: 1.34V
Max. load current: 77A
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Gate current: 100/200mA
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1632.45 грн |
| 2+ | 1433.42 грн |
| MCD44-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
товар відсутній
| MCD56-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD72-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Max. off-state voltage: 1.2kV
Load current: 85A
Semiconductor structure: double series
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Max. forward voltage: 1.34V
Max. load current: 133A
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Gate current: 150/200mA
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2168.26 грн |
| 2+ | 1903.99 грн |
| MCD72-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD72-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.34V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO550-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO580-02F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 580A
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 3.8mΩ
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.75µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 580A
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 3.8mΩ
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.75µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO60-05F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO650-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| VMO1200-01F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 1.22kA; Y3-Li; PolarHT™; 1.71uC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 1.22kA
Case: Y3-Li
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.25mΩ
Technology: PolarHT™
Kind of channel: enhanced
Gate charge: 1.71µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| IXFH130N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 666.54 грн |
| IXFH88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1000.61 грн |
| 2+ | 709.59 грн |
| 3+ | 708.84 грн |
| 4+ | 670.63 грн |
| IXFK88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Case: TO264
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO264
Mounting: THT
Kind of package: tube
Power dissipation: 600W
Polarisation: unipolar
Gate charge: 180nC
Kind of channel: enhanced
Case: TO264
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 988.51 грн |
| 2+ | 738.82 грн |
| 4+ | 697.6 грн |
| IXFT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTH88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 741.58 грн |
| 2+ | 589.7 грн |
| 3+ | 588.95 грн |
| 4+ | 557.48 грн |
| IXTQ88N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTT88N30P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXGK120N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
| IXGK120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
товар відсутній
| IXYK120N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1558.21 грн |
| 2+ | 1368.23 грн |
| 3+ | 1367.48 грн |
| IXYX120N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1996.38 грн |
| 2+ | 1752.63 грн |
| IXYX120N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1994.77 грн |
| 2+ | 1751.88 грн |
| MMIX1G120N120A3V1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 105A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: SMD
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
товар відсутній
| DSSS35-008AR |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 80V
Max. forward voltage: 0.68V
Load current: 35A x2
Semiconductor structure: double series
Max. forward impulse current: 600A
Power dissipation: 190W
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 80V
Max. forward voltage: 0.68V
Load current: 35A x2
Semiconductor structure: double series
Max. forward impulse current: 600A
Power dissipation: 190W
Kind of package: tube
Type of diode: Schottky rectifying
товар відсутній
| IXYH16N250C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
товар відсутній
| IXYH16N250CV1HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
товар відсутній
| IX4340UE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.69 грн |
| 10+ | 62.04 грн |
| 22+ | 40.53 грн |
| 60+ | 38.32 грн |
| 1040+ | 37.02 грн |
| IX4340UETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| IXTA26P20P |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 436.56 грн |
| 3+ | 312.46 грн |
| 8+ | 295.98 грн |
| IXTH26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
товар відсутній
| IXTH48P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 85mΩ
Drain current: -48A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 462W
на замовлення 288 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 747.23 грн |
| 2+ | 546.24 грн |
| 5+ | 516.27 грн |
| IXTP26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 455.12 грн |
| 3+ | 292.23 грн |
| 9+ | 276.49 грн |
| IXTQ26P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.84 грн |
| 3+ | 312.46 грн |
| 8+ | 295.98 грн |
| 30+ | 291.48 грн |
| IXTR48P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 93mΩ
Drain current: -30A
Drain-source voltage: -200V
Gate charge: 103nC
Reverse recovery time: 260ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 190W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.58 грн |
| 2+ | 675.12 грн |
| 4+ | 638.41 грн |
| 30+ | 627.92 грн |