IXFX26N100P

IXFX26N100P Littelfuse


te_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 1KV 20A 3-Pin(3+Tab) PLUS 247
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXFX26N100P Littelfuse

Description: MOSFET N-CH 1000V 26A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.

Інші пропозиції IXFX26N100P

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXFX26N100P IXFX26N100P Виробник : IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IXFX26N100P IXFX26N100P Виробник : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
товар відсутній
IXFX26N100P IXFX26N100P Виробник : IXYS media-3320810.pdf MOSFET 26 Amps 1000V
товар відсутній
IXFX26N100P IXFX26N100P Виробник : IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній