![IXTH38N30L2 IXTH38N30L2](https://ce8dc832c.cloudimg.io/v7/_cdn_/2D/F3/00/00/0/16338_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=f55ae6487ff4139e26964e5e5e8dbeb7f97a7f06)
IXTH38N30L2 IXYS
![IXTH38N30L2.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXTH38N30L2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 38A, Power dissipation: 400W, Case: TO247-3, On-state resistance: 0.1Ω, Mounting: THT, Gate charge: 260nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 420ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTH38N30L2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXTH38N30L2 | Виробник : Littelfuse |
![]() |
товар відсутній |
||
![]() |
IXTH38N30L2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
товар відсутній |