Фото | Назва | Виробник | Інформація |
Доступність |
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MIXA10W1200TML | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: fans; for pump; motors Case: E1-Pack Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Sonic FRD™; XPT™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 30A Power dissipation: 65W |
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MIXA10WB1200TML | IXYS |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 12A Case: E1-Pack Application: fans; for pump; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 63W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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MKI75-06A7T | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Case: E2-Pack Pulsed collector current: 120A Collector current: 60A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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MKI75-06A7 | IXYS |
![]() Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: for UPS; motors Electrical mounting: Press-in PCB Topology: H-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
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MWI75-06A7T | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Technology: NPT Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
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IXFR24N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.42Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXFR44N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IXFT24N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO268 On-state resistance: 0.4Ω Mounting: SMD Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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IXFX34N80 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
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IXFX44N80P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced |
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IXFX44N80Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced |
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IXTA300N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Features of semiconductor devices: thrench gate power mosfet Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W |
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IXTB30N100L | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS264™ Features of semiconductor devices: linear power mosfet Gate charge: 545nC Kind of channel: enhanced Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 800W |
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IXTN30N100L | IXYS |
![]() Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Case: SOT227B Gate charge: 545nC Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 70A Semiconductor structure: single transistor Reverse recovery time: 1µs Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.45Ω Power dissipation: 800W Type of module: MOSFET transistor |
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IXTP300N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Features of semiconductor devices: thrench gate power mosfet Gate charge: 145nC Kind of channel: enhanced Reverse recovery time: 53ns Drain-source voltage: 40V Drain current: 300A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 480W |
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DSA50C150HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Power dissipation: 160W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 390A Max. forward voltage: 0.74V |
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DSA60C100PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 100V Max. forward impulse current: 440A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.78V Load current: 30A x2 |
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DSA60C150PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 150V Max. forward impulse current: 390A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.8V Load current: 30A x2 |
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DSA60C45HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Power dissipation: 160W Max. off-state voltage: 45V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.66V Load current: 30A x2 |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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DSA60C45PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 45V Max. forward impulse current: 490A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.67V Load current: 30A x2 |
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DSA60C60HB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube Type of diode: Schottky rectifying Power dissipation: 160W Max. off-state voltage: 60V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 0.75V Load current: 30A x2 |
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DSA60C60PB | IXYS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube Type of diode: Schottky rectifying Power dissipation: 175W Max. off-state voltage: 60V Max. forward impulse current: 0.45kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.77V Load current: 30A x2 |
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DPF240X200NA | IXYS |
![]() Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Case: SOT227B Max. off-state voltage: 200V Max. forward voltage: 1.06V Load current: 120A x2 Semiconductor structure: double independent Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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VUM33-06PH | IXYS |
![]() Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors Polarisation: unipolar Electrical mounting: FASTON connectors Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 165nC Gate-source voltage: ±20V Topology: boost chopper; single-phase diode bridge Case: V1-B-Pack Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 50A On-state resistance: 0.12Ω Power dissipation: 500W |
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VUM33-05N | IXYS |
![]() Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors Polarisation: unipolar Electrical mounting: FASTON connectors Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.35µC Gate-source voltage: ±20V Topology: buck chopper; single-phase diode bridge Pulsed drain current: 130A Case: V1-B-Pack Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 33A On-state resistance: 0.12Ω Power dissipation: 310W |
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CPC1961G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: THT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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CPC1961GS | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
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CPC1961GSTR | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP8 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 250mA Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
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CPC1963G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: THT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
на замовлення 414 шт: термін постачання 21-30 дні (днів) |
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CPC1963GS | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
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CPC1963GSTR | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6 Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: DIP6 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 0.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
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CPC1964B | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state |
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CPC1964BX6 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 1.5A Relay variant: 1-phase Switched voltage: max. 600V AC Control current max.: 50mA Type of relay: solid state |
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CPC1965Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 260V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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CPC1966B | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state Turn-on time: 20µs |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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CPC1966BX8 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8 Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Mounting: SMT Case: SO8 Insulation voltage: 5kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA Type of relay: solid state |
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CPC1966Y | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4 Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Mounting: THT Case: SIP4 Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 3A Relay variant: 1-phase Switched voltage: max. 240V AC Control current max.: 50mA Type of relay: solid state |
на замовлення 312 шт: термін постачання 21-30 дні (днів) |
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CPC1966YX6 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4 Type of relay: solid state Control current max.: 50mA Max. operating current: 3A Switched voltage: max. 600V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Switching method: instantaneous switching Insulation voltage: 3.75kV Turn-on time: 500µs |
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CPC1966YX8 | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4 Mounting: THT Operating temperature: -40...85°C Case: SIP4 Turn-on time: 20µs Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Max. operating current: 3A Type of relay: solid state Relay variant: 1-phase Switched voltage: max. 800V AC Control current max.: 50mA |
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CPC1967J | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1350mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 0.85Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1972G | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
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CPC1972GS | IXYS |
![]() Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6 Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV |
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DSP25-16AR | IXYS |
![]() Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™ Mounting: THT Kind of package: tube Load current: 28A x2 Semiconductor structure: double series Max. forward impulse current: 300A Power dissipation: 100W Type of diode: rectifying Case: ISOPLUS247™ Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V |
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IXFH18N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.66Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
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IXFN38N100P | IXYS |
![]() Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A Case: SOT227B Power dissipation: 1kW Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.35µC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 120A Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.21Ω |
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IXFT18N100Q3 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268 Mounting: SMD Case: TO268 Kind of package: tube Power dissipation: 830W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Drain-source voltage: 1kV Drain current: 18A On-state resistance: 0.66Ω Type of transistor: N-MOSFET |
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IXTA08N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted |
на замовлення 184 шт: термін постачання 21-30 дні (днів) |
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IXTA08N100D2HV | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263HV On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted |
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IXTA08N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET |
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IXTP08N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 21Ω Mounting: THT Gate charge: 325nC Kind of package: tube Kind of channel: depleted |
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IXTP08N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 42W Case: TO220AB On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTY08N100D2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 21Ω Mounting: SMD Gate charge: 325nC Kind of package: tube Kind of channel: depleted |
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IXTY08N100P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Case: TO252 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET |
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IXFP44N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: THT Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO220AB Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
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IXTT64N25P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268 Mounting: SMD Power dissipation: 400W Polarisation: unipolar Kind of package: tube Gate charge: 105nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 64A On-state resistance: 49mΩ Type of transistor: N-MOSFET |
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CPC1394G | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 40Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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CPC1394GR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 40Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 2279 шт: термін постачання 21-30 дні (днів) |
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CPC1394GRTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 40Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
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CPC1394GV | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 40Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 452 шт: термін постачання 21-30 дні (днів) |
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PAA150 | IXYS |
![]() Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; THT Kind of output: MOSFET Mounting: THT Case: DIP8 On-state resistance: 7Ω Operating temperature: -40...85°C Turn-on time: 2.5ms Turn-off time: 0.5ms Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 250mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS |
товар відсутній |
MIXA10W1200TML |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 30A
Power dissipation: 65W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: fans; for pump; motors
Case: E1-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 30A
Power dissipation: 65W
товар відсутній
MIXA10WB1200TML |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 63W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 12A
Case: E1-Pack
Application: fans; for pump; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 63W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
MKI75-06A7T |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Case: E2-Pack
Pulsed collector current: 120A
Collector current: 60A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Case: E2-Pack
Pulsed collector current: 120A
Collector current: 60A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: H-bridge
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Power dissipation: 280W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MKI75-06A7 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: for UPS; motors
Electrical mounting: Press-in PCB
Topology: H-bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MWI75-06A7T |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: NPT
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Application: motors
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXFR24N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 935.81 грн |
2+ | 622.87 грн |
4+ | 588.75 грн |
IXFR44N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFT24N80P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX34N80 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX44N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFX44N80Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTA300N04T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
товар відсутній
IXTB30N100L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Features of semiconductor devices: linear power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Features of semiconductor devices: linear power mosfet
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
товар відсутній
IXTN30N100L |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Gate charge: 545nC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 70A
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Power dissipation: 800W
Type of module: MOSFET transistor
товар відсутній
IXTP300N04T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
товар відсутній
DSA50C150HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.74V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 160W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 390A
Max. forward voltage: 0.74V
товар відсутній
DSA60C100PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 100V
Max. forward impulse current: 440A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 100V
Max. forward impulse current: 440A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
товар відсутній
DSA60C150PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
товар відсутній
DSA60C45HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 265.03 грн |
3+ | 221.42 грн |
5+ | 177.13 грн |
14+ | 167.69 грн |
DSA60C45PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
товар відсутній
DSA60C60HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 160W; TO247-3; tube
Type of diode: Schottky rectifying
Power dissipation: 160W
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
товар відсутній
DSA60C60PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; 175W; TO220AB; tube
Type of diode: Schottky rectifying
Power dissipation: 175W
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
товар відсутній
DPF240X200NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Max. off-state voltage: 200V
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
VUM33-06PH |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 165nC
Gate-source voltage: ±20V
Topology: boost chopper; single-phase diode bridge
Case: V1-B-Pack
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 0.12Ω
Power dissipation: 500W
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 165nC
Gate-source voltage: ±20V
Topology: boost chopper; single-phase diode bridge
Case: V1-B-Pack
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
On-state resistance: 0.12Ω
Power dissipation: 500W
товар відсутній
VUM33-05N |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Gate-source voltage: ±20V
Topology: buck chopper; single-phase diode bridge
Pulsed drain current: 130A
Case: V1-B-Pack
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.12Ω
Power dissipation: 310W
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; V1-B-Pack; FASTON connectors
Polarisation: unipolar
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Gate-source voltage: ±20V
Topology: buck chopper; single-phase diode bridge
Pulsed drain current: 130A
Case: V1-B-Pack
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.12Ω
Power dissipation: 310W
товар відсутній
CPC1961G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; THT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
на замовлення 208 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.59 грн |
9+ | 100.18 грн |
24+ | 94.37 грн |
CPC1961GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1961GSTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; SMT; DIP8
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP8
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1963G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; THT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
на замовлення 414 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 644.2 грн |
3+ | 287.48 грн |
9+ | 272.23 грн |
CPC1963GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1963GSTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; SMT; DIP6
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: DIP6
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1964B |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1964BX6 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 1500mA; max.600VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 1.5A
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1965Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; THT
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 472.2 грн |
5+ | 201.09 грн |
12+ | 190.2 грн |
CPC1966B |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 20µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Turn-on time: 20µs
на замовлення 93 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 497.22 грн |
4+ | 221.42 грн |
11+ | 209.07 грн |
CPC1966BX8 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; SMT; SO8
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Mounting: SMT
Case: SO8
Insulation voltage: 5kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Type of relay: solid state
товар відсутній
CPC1966Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; THT; SIP4
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Mounting: THT
Case: SIP4
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Relay variant: 1-phase
Switched voltage: max. 240V AC
Control current max.: 50mA
Type of relay: solid state
на замовлення 312 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 453.44 грн |
5+ | 198.91 грн |
12+ | 188.02 грн |
CPC1966YX6 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; THT; SIP4
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: instantaneous switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
товар відсутній
CPC1966YX8 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
Turn-on time: 20µs
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; THT; SIP4
Mounting: THT
Operating temperature: -40...85°C
Case: SIP4
Turn-on time: 20µs
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 800V AC
Control current max.: 50mA
товар відсутній
CPC1967J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 0.85Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1350mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 0.85Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
CPC1972G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; THT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
CPC1972GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; SMT; DIP6
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
товар відсутній
DSP25-16AR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Kind of package: tube
Load current: 28A x2
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 100W
Type of diode: rectifying
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Mounting: THT
Kind of package: tube
Load current: 28A x2
Semiconductor structure: double series
Max. forward impulse current: 300A
Power dissipation: 100W
Type of diode: rectifying
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
товар відсутній
IXFH18N100Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFN38N100P |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Case: SOT227B
Power dissipation: 1kW
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.35µC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.21Ω
товар відсутній
IXFT18N100Q3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Drain-source voltage: 1kV
Drain current: 18A
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
товар відсутній
IXTA08N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
на замовлення 184 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 132.12 грн |
4+ | 111.8 грн |
10+ | 89.29 грн |
26+ | 84.21 грн |
IXTA08N100D2HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
товар відсутній
IXTA08N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
товар відсутній
IXTP08N100D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
товар відсутній
IXTP08N100P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 42W
Case: TO220AB
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 142.29 грн |
4+ | 119.78 грн |
IXTY08N100D2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
товар відсутній
IXTY08N100P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Case: TO252
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
товар відсутній
IXFP44N25X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: THT
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO220AB
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTT64N25P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO268
Mounting: SMD
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Gate charge: 105nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товар відсутній
CPC1394G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
CPC1394GR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.88 грн |
8+ | 105.99 грн |
22+ | 100.18 грн |
CPC1394GRTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
CPC1394GV |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 40Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 452 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.88 грн |
8+ | 105.99 грн |
22+ | 100.18 грн |
PAA150 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Kind of output: MOSFET
Mounting: THT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Kind of output: MOSFET
Mounting: THT
Case: DIP8
On-state resistance: 7Ω
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
товар відсутній