| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DH20-18A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 150A Case: TO247-2 Max. forward voltage: 2.35V Power dissipation: 140W Reverse recovery time: 300ns |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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| VWO35-08ho7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing x3; 800V; 16A; ECO-PAC 1; Ufmax: 1.19V Type of module: thyristor Semiconductor structure: opposing x3 Max. off-state voltage: 0.8kV Load current: 16A Case: ECO-PAC 1 Max. forward voltage: 1.19V Max. forward impulse current: 200A Gate current: 25/50mA Electrical mounting: THT Leads: wire Ø 1.5mm Kind of package: bulk Mechanical mounting: screw |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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DSEC59-06BC | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™ Max. off-state voltage: 0.6kV Max. forward voltage: 2.51V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 25ns Max. forward impulse current: 250A Power dissipation: 135W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Mounting: THT Case: ISOPLUS220™ |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXFX170N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.15kW Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |
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CPC1540G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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MDD255-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Max. load current: 450A Mechanical mounting: screw |
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MDD255-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Max. load current: 450A Mechanical mounting: screw |
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| MDD255-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDD255-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.8kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
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DSEP2X91-03A | IXYS |
 Category: Diode modulesDescription: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 90A x2 Case: SOT227B Max. forward voltage: 1.54V Max. forward impulse current: 1kA Electrical mounting: screw Mechanical mounting: screw Technology: HiPerFRED™ |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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DSEP2X31-03A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 300V Load current: 30A x2 Case: SOT227B Max. forward voltage: 0.9V Max. forward impulse current: 300A Electrical mounting: screw Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXBN75N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: high voltage Technology: BiMOSFET™ Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 680A Power dissipation: 625W |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| DH20-18A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Max. forward voltage: 2.35V
Power dissipation: 140W
Reverse recovery time: 300ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Max. forward voltage: 2.35V
Power dissipation: 140W
Reverse recovery time: 300ns
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 390.42 грн |
| 4+ | 254.15 грн |
| 10+ | 240.7 грн |
| 120+ | 234.72 грн |
| VWO35-08ho7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing x3; 800V; 16A; ECO-PAC 1; Ufmax: 1.19V
Type of module: thyristor
Semiconductor structure: opposing x3
Max. off-state voltage: 0.8kV
Load current: 16A
Case: ECO-PAC 1
Max. forward voltage: 1.19V
Max. forward impulse current: 200A
Gate current: 25/50mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; opposing x3; 800V; 16A; ECO-PAC 1; Ufmax: 1.19V
Type of module: thyristor
Semiconductor structure: opposing x3
Max. off-state voltage: 0.8kV
Load current: 16A
Case: ECO-PAC 1
Max. forward voltage: 1.19V
Max. forward impulse current: 200A
Gate current: 25/50mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1149.54 грн |
| 3+ | 1009.12 грн |
| DSEC59-06BC |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.51V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 250A
Power dissipation: 135W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS220™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; ISOPLUS220™
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.51V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 250A
Power dissipation: 135W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: ISOPLUS220™
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 385.6 грн |
| 3+ | 322.17 грн |
| 4+ | 256.39 грн |
| 10+ | 242.19 грн |
| IXFX170N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| CPC1540G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 305.9 грн |
| 7+ | 136.79 грн |
| 18+ | 129.32 грн |
| MDD255-20N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. load current: 450A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. load current: 450A
Mechanical mounting: screw
товар відсутній
| MDD255-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. load current: 450A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Max. load current: 450A
Mechanical mounting: screw
товар відсутній
| MDD255-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDD255-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DSEP2X91-03A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 90Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 90A x2
Case: SOT227B
Max. forward voltage: 1.54V
Max. forward impulse current: 1kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2634.76 грн |
| DSEP2X31-03A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 0.9V
Max. forward impulse current: 300A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 30A x2
Case: SOT227B
Max. forward voltage: 0.9V
Max. forward impulse current: 300A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1744.44 грн |
| IXBN75N170 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 680A
Power dissipation: 625W
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 680A
Power dissipation: 625W
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6421.48 грн |
| 10+ | 5865.63 грн |