| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFH26N60P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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IXTH26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTQ26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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IXTT26N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO268 On-state resistance: 0.27Ω Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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| DHG40I4500KO | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™ Kind of package: tube Max. off-state voltage: 4.5kV Max. forward voltage: 3.5V Load current: 43A Semiconductor structure: single diode Max. forward impulse current: 600A Type of diode: rectifying Case: ISOPLUS264™ Mounting: THT Technology: Sonic FRD™ |
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| MDI150-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 120A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 760W Technology: NPT Mechanical mounting: screw |
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IXTP05N100M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns Case: TO220FP Reverse recovery time: 710ns Drain-source voltage: 1kV Drain current: 0.7A On-state resistance: 17Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Mounting: THT |
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| MIXA600PF650TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 490A Case: SimBus F Application: fans; for pump; for UPS; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Power dissipation: 1.75kW Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXG300PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Case: SimBus F Technology: X2PT Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; NTC thermistor Collector current: 315A |
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IX4428N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of output: inverting; non-inverting Kind of package: tube Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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IX4428NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of output: inverting; non-inverting Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Type of integrated circuit: driver Number of channels: 2 |
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IXYA50N65C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: SMD Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IXYH50N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns |
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IXYH50N65C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns |
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IXYP50N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns |
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| MIXA60WH1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E3-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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DNA90YA2200NA | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A Max. off-state voltage: 2.2kV Max. forward voltage: 0.86V Load current: 90A Semiconductor structure: common anode Max. forward impulse current: 370A Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase half bridge Case: SOT227B |
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MCD224-22io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 390A Threshold on-voltage: 0.72V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD225-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 400A Threshold on-voltage: 0.79V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD225-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 400A Threshold on-voltage: 0.79V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD225-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 400A Threshold on-voltage: 0.79V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD225-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Gate current: 150/220mA Electrical mounting: screw Max. load current: 400A Threshold on-voltage: 0.79V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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| MCMA240UI1600ED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Topology: 3-phase diode-thyristor bridge; boost chopper Case: E2-Pack Collector current: 140A Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Type of module: IGBT Max. off-state voltage: 1.2kV Mechanical mounting: screw Semiconductor structure: diode/transistor Pulsed collector current: 300A |
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| MCMA240UI1600PED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Topology: 3-phase diode-thyristor bridge; boost chopper Case: E2-Pack Collector current: 140A Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Type of module: IGBT Max. off-state voltage: 1.2kV Mechanical mounting: screw Semiconductor structure: diode/transistor Pulsed collector current: 300A |
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| MCNA120UI2200PED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Topology: 3-phase diode-thyristor bridge; boost chopper Case: E2-Pack Collector current: 80A Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Type of module: IGBT Max. off-state voltage: 1.7kV Mechanical mounting: screw Semiconductor structure: diode/transistor Pulsed collector current: 150A |
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| MCNA120UI2200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E2-Pack Application: Inverter Power dissipation: 190W Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A |
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| MDMA210UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Mechanical mounting: screw |
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| MDMA240UB1600ED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw |
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| MDMA280UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 140A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw |
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| MDMA360UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
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| MDNA210UB2200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Case: E2-Pack Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB |
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| MDNA280UB2200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Case: E2-Pack Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB |
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| MDNA360UB2200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Case: E2-Pack Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 135A Pulsed collector current: 280A Electrical mounting: Press-in PCB |
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| MID100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw |
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| MID145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 700W Technology: NPT Mechanical mounting: screw |
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| MID200-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 180A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 360A Power dissipation: 1.13kW Technology: NPT Mechanical mounting: screw |
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| MID300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 220A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 1.38kW Technology: NPT Mechanical mounting: screw |
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| MID550-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 460A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.75kW Technology: NPT Mechanical mounting: screw |
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| MITA300RF1700PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Mechanical mounting: screw Electrical mounting: Press-Fit Type of module: IGBT Technology: Trench Topology: boost chopper Case: E2-Pack PFP Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Collector current: 310A |
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| MIXA61WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™ Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 190A Case: E3-Pack Electrical mounting: Press-in PCB Technology: XPT™ Mechanical mounting: screw |
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CPC5620A | IXYS |
Category: Interfaces others - integrated circuits Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube Type of integrated circuit: phone line interface Supply voltage: 2.8...5.5V DC Interface: PLI Mounting: SMD Case: SO32 Integrated circuit features: galvanically isolated Kind of package: tube |
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| UGD6123AG | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3 Version: module Max. forward impulse current: 50A Electrical mounting: THT Mechanical mounting: screw Features of semiconductor devices: high voltage Type of bridge rectifier: three-phase Case: UGD3 Leads: round pin Max. off-state voltage: 7.2kV Load current: 1.8A |
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DSS40-0008D | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 8V Load current: 40A Power dissipation: 155W Semiconductor structure: single diode Case: TO247-3 Kind of package: tube Max. forward impulse current: 600A Max. forward voltage: 0.23V |
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IXTX120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Mounting: THT Drain current: -120A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Case: PLUS247™ Reverse recovery time: 300ns Drain-source voltage: -200V |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IXFA38N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 127 шт: термін постачання 21-30 дні (днів) |
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IXFP38N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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IXFP38N30X3M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
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IXTH38N30L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
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LDA212STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Number of channels: 2 Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
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DSEI2X61-06C | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw Max. off-state voltage: 0.6kV Load current: 60A x2 Semiconductor structure: double independent Max. forward impulse current: 600A Case: SOT227B Max. forward voltage: 1.8V Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
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PM1205S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6 Operating temperature: -40...85°C Max. operating current: 0.5A Mounting: SMT Case: DIP6 Switched voltage: max. 500V AC Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Control current max.: 100mA |
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| PM1205STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6 Operating temperature: -40...85°C Max. operating current: 0.5A Mounting: SMT Case: DIP6 Switched voltage: max. 500V AC Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Type of relay: solid state Relay variant: 1-phase Control current max.: 100mA |
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IXGX320N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™ Mounting: THT Case: PLUS247™ Kind of package: tube Gate charge: 585nC Technology: GenX3™; PT Pulsed collector current: 1.2kA Type of transistor: IGBT Turn-on time: 107ns Turn-off time: 595ns Gate-emitter voltage: ±20V Collector current: 320A Collector-emitter voltage: 600V Power dissipation: 1.7kW |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXGX50N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™ Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Gate charge: 196nC Technology: GenX3™; PT Kind of package: tube Mounting: THT Case: PLUS247™ |
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IXGX55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
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IXGX82N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
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IXGX82N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
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IXFA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 0.1Ω Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 164ns |
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| IXFA34N65X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
товар відсутній |
| IXFH26N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFT26N60P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTH26N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTQ26N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| IXTT26N60P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| DHG40I4500KO |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Kind of package: tube
Max. off-state voltage: 4.5kV
Max. forward voltage: 3.5V
Load current: 43A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Type of diode: rectifying
Case: ISOPLUS264™
Mounting: THT
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Kind of package: tube
Max. off-state voltage: 4.5kV
Max. forward voltage: 3.5V
Load current: 43A
Semiconductor structure: single diode
Max. forward impulse current: 600A
Type of diode: rectifying
Case: ISOPLUS264™
Mounting: THT
Technology: Sonic FRD™
товар відсутній
| MDI150-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 120A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 120A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| IXTP05N100M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Case: TO220FP
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.7A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Case: TO220FP
Reverse recovery time: 710ns
Drain-source voltage: 1kV
Drain current: 0.7A
On-state resistance: 17Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Mounting: THT
товар відсутній
| MIXA600PF650TSF |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 490A
Case: SimBus F
Application: fans; for pump; for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 1.75kW
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 490A
Case: SimBus F
Application: fans; for pump; for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 1.75kW
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXG300PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: X2PT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Collector current: 315A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: SimBus F
Technology: X2PT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Collector current: 315A
товар відсутній
| IX4428N |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: tube
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
на замовлення 175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.36 грн |
| 8+ | 48.93 грн |
| 23+ | 37.75 грн |
| 61+ | 36.3 грн |
| IX4428NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of output: inverting; non-inverting
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| IXYA50N65C3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 493.31 грн |
| 3+ | 332.49 грн |
| 8+ | 314.34 грн |
| IXYH50N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
| IXYH50N65C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
| IXYP50N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
| MIXA60WH1200TEH |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| DNA90YA2200NA |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common anode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 2.2kV; If: 90A
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.86V
Load current: 90A
Semiconductor structure: common anode
Max. forward impulse current: 370A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Case: SOT227B
товар відсутній
| MCD224-22io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 390A
Threshold on-voltage: 0.72V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 390A
Threshold on-voltage: 0.72V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD225-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD225-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD225-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD225-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 400A
Threshold on-voltage: 0.79V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCMA240UI1600ED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 140A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 140A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 300A
товар відсутній
| MCMA240UI1600PED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 140A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 140A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 300A
товар відсутній
| MCNA120UI2200PED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 80A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.7kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Topology: 3-phase diode-thyristor bridge; boost chopper
Case: E2-Pack
Collector current: 80A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Type of module: IGBT
Max. off-state voltage: 1.7kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Pulsed collector current: 150A
товар відсутній
| MCNA120UI2200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E2-Pack
Application: Inverter
Power dissipation: 190W
Type of module: IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: E2-Pack
Application: Inverter
Power dissipation: 190W
Type of module: IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
товар відсутній
| MDMA210UB1600PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mechanical mounting: screw
товар відсутній
| MDMA240UB1600ED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
товар відсутній
| MDMA280UB1600PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
товар відсутній
| MDMA360UB1600PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
товар відсутній
| MDNA210UB2200PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
товар відсутній
| MDNA280UB2200PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
товар відсутній
| MDNA360UB2200PTED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Electrical mounting: Press-in PCB
товар відсутній
| MID100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID145-12A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID200-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID300-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MID550-12A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
товар відсутній
| MITA300RF1700PTED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit
Type of module: IGBT
Technology: Trench
Topology: boost chopper
Case: E2-Pack PFP
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Collector current: 310A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit
Type of module: IGBT
Technology: Trench
Topology: boost chopper
Case: E2-Pack PFP
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Collector current: 310A
товар відсутній
| MIXA61WB1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 190A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: XPT™
Mechanical mounting: screw
товар відсутній
| CPC5620A |
|
Виробник: IXYS
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
Category: Interfaces others - integrated circuits
Description: IC: phone line interface; 2.8÷5.5VDC; PLI; SMD; SO32; tube
Type of integrated circuit: phone line interface
Supply voltage: 2.8...5.5V DC
Interface: PLI
Mounting: SMD
Case: SO32
Integrated circuit features: galvanically isolated
Kind of package: tube
товар відсутній
| UGD6123AG |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3
Version: module
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Case: UGD3
Leads: round pin
Max. off-state voltage: 7.2kV
Load current: 1.8A
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 7.2kV; If: 1.8A; Ifsm: 50A; THT; UGD3
Version: module
Max. forward impulse current: 50A
Electrical mounting: THT
Mechanical mounting: screw
Features of semiconductor devices: high voltage
Type of bridge rectifier: three-phase
Case: UGD3
Leads: round pin
Max. off-state voltage: 7.2kV
Load current: 1.8A
товар відсутній
| DSS40-0008D |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Power dissipation: 155W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.23V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Power dissipation: 155W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.23V
товар відсутній
| IXTX120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Mounting: THT
Drain current: -120A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Case: PLUS247™
Reverse recovery time: 300ns
Drain-source voltage: -200V
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1760.6 грн |
| 2+ | 1546.28 грн |
| 3+ | 1545.55 грн |
| 10+ | 1544.82 грн |
| IXFA38N30X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.97 грн |
| 3+ | 230.85 грн |
| 10+ | 214.88 грн |
| 50+ | 210.53 грн |
| IXFP38N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 332.26 грн |
| 3+ | 278.04 грн |
| 4+ | 221.42 грн |
| 11+ | 209.07 грн |
| IXFP38N30X3M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXTH38N30L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 400W; TO247-3; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
товар відсутній
| LDA212STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
| DSEI2X61-06C |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; SOT227B; screw
Max. off-state voltage: 0.6kV
Load current: 60A x2
Semiconductor structure: double independent
Max. forward impulse current: 600A
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
| PM1205S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
| PM1205STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; SMT; DIP6
Operating temperature: -40...85°C
Max. operating current: 0.5A
Mounting: SMT
Case: DIP6
Switched voltage: max. 500V AC
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Type of relay: solid state
Relay variant: 1-phase
Control current max.: 100mA
товар відсутній
| IXGX320N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Gate charge: 585nC
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
Power dissipation: 1.7kW
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Gate charge: 585nC
Technology: GenX3™; PT
Pulsed collector current: 1.2kA
Type of transistor: IGBT
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
Power dissipation: 1.7kW
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1508.86 грн |
| 2+ | 1324.86 грн |
| IXGX50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 60ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 460W
Gate charge: 196nC
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Case: PLUS247™
товар відсутній
| IXGX55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 55A
Power dissipation: 460W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
| IXGX82N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній
| IXGX82N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товар відсутній
| IXFA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
товар відсутній
| IXFA34N65X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній