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IXTH76P10T IXTH76P10T IXYS IXT_76P10T_HV.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
1+517.55 грн
3+ 326.68 грн
7+ 309.26 грн
IXTA60N20T IXTA60N20T IXYS IXTA(P,Q)60N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
2+324.44 грн
3+ 270.78 грн
4+ 216.33 грн
11+ 203.99 грн
Мінімальне замовлення: 2
IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
товар відсутній
IXTK600N04T2 IXTK600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
товар відсутній
IXTK60N50L2 IXTK60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 500V
Drain current: 60A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Kind of channel: enhanced
Reverse recovery time: 980ns
товар відсутній
IXTN600N04T2 IXTN600N04T2 IXYS IXTN600N04T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
товар відсутній
IXTN60N50L2 IXTN60N50L2 IXYS IXTN60N50L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
товар відсутній
IXTP60N20T IXTP60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
2+376.04 грн
3+ 313.61 грн
4+ 255.53 грн
10+ 241.74 грн
Мінімальне замовлення: 2
IXTQ60N20L2 IXTQ60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
товар відсутній
IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
товар відсутній
IXTT60N20L2 IXTT60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
товар відсутній
IXTA1N200P3HV IXTA1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXTH1N200P3 IXTH1N200P3 IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXTH1N200P3HV IXTH1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXDN609SI IXDN609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 810 шт:
термін постачання 21-30 дні (днів)
3+167.3 грн
5+ 137.2 грн
7+ 124.14 грн
19+ 117.6 грн
100+ 115.43 грн
Мінімальне замовлення: 3
IXDN609SIA IXDN609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 927 шт:
термін постачання 21-30 дні (днів)
4+111.01 грн
5+ 93.65 грн
12+ 74.05 грн
32+ 70.42 грн
Мінімальне замовлення: 4
DFE240X600NA DFE240X600NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Case: SOT227B
Semiconductor structure: double independent
Load current: 120A x2
Max. forward voltage: 1.2V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Reverse recovery time: 35ns
Technology: FRED
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+2347.73 грн
2+ 2061.7 грн
3+ 2060.98 грн
CPC1303G CPC1303G IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: DIP4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 268 шт:
термін постачання 21-30 дні (днів)
7+61.54 грн
8+ 45.74 грн
25+ 38.53 грн
29+ 28.65 грн
79+ 27.09 грн
Мінімальне замовлення: 7
CPC1303GR CPC1303GR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 691 шт:
термін постачання 21-30 дні (днів)
5+76.22 грн
15+ 57.35 грн
40+ 53.72 грн
Мінімальне замовлення: 5
CPC1303GRTR CPC1303GRTR IXYS CPC1303GR.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 999 шт:
термін постачання 21-30 дні (днів)
4+119.61 грн
5+ 87.11 грн
15+ 55.17 грн
41+ 52.27 грн
500+ 50.82 грн
Мінімальне замовлення: 4
MCC56-14io8B MCC56-14io8B IXYS MCC56-14io8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC95-14io1B MCC95-14io1B IXYS MCC95_MCD95.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2375.09 грн
MCC95-14io8B MCC95-14io8B IXYS MCC95-14io8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2272.67 грн
MCC44-14io1B MCC44-14io1B IXYS MCC44-14io1B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC44-14io8B MCC44-14io8B IXYS MCC44-14io8B.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
VUB72-12NOXT VUB72-12NOXT IXYS VUB72-12NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 195W
Mechanical mounting: screw
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+2642.46 грн
MDD200-14N1 IXYS MDD200-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD200-16N1 MDD200-16N1 IXYS MDD200-16N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
товар відсутній
MDD200-18N1 IXYS MDD200-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD200-22N1 MDD200-22N1 IXYS MDD200-22N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
товар відсутній
IXYN120N120C3 IXYN120N120C3 IXYS IXYN120N120C3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN82N120C3 IXYN82N120C3 IXYS IXYN82N120C3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3H1 IXYN82N120C3H1 IXYS IXYN82N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+898.28 грн
2+ 597.46 грн
3+ 596.73 грн
4+ 564.79 грн
IXXA50N60B3 IXXA50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
товар відсутній
IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+666.09 грн
2+ 443.56 грн
6+ 419.6 грн
10+ 418.87 грн
IXYN150N60B3 IXYN150N60B3 IXYS IXYN150N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MDA72-08N1B IXYS MDD72,%20MDA72.pdf Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Type of module: diode
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
товар відсутній
MDA72-16N1B MDA72-16N1B IXYS MDD72,%20MDA72.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
товар відсутній
IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
2+263.46 грн
3+ 219.96 грн
5+ 175.68 грн
14+ 165.52 грн
Мінімальне замовлення: 2
IXYH20N65C3 IXYH20N65C3 IXYS IXYA(H)20N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYP20N65C3D1 IXYP20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
2+230.63 грн
7+ 140.83 грн
17+ 132.85 грн
Мінімальне замовлення: 2
IXYP20N65C3D1M IXYP20N65C3D1M IXYS IXYP20N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXFK120N65X2 IXFK120N65X2 IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
товар відсутній
IXFX120N65X2 IXFX120N65X2 IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
товар відсутній
IXTK120N65X2 IXTK120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
товар відсутній
IXTX120N65X2 IXTX120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
товар відсутній
IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
на замовлення 2138 шт:
термін постачання 21-30 дні (днів)
6+71.14 грн
8+ 48.93 грн
23+ 38.48 грн
61+ 36.3 грн
250+ 35.72 грн
Мінімальне замовлення: 6
IX4426NTR IX4426NTR IXYS media?resourcetype=datasheets&itemid=c6ab540e-0c18-4a06-ac19-7bd5332b5a89&filename=ix4426-27-28 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
товар відсутній
IXTK120N25P IXTK120N25P IXYS IXTK120N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
1+1203.18 грн
2+ 809.44 грн
3+ 765.88 грн
MCMA160P1600YA IXYS media?resourcetype=datasheets&amp;itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; Ifmax: 250A; Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Max. load current: 250A
Case: Y4-M6
Max. forward voltage: 1.09V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA160P1800YA-MI IXYS media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; Ifmax: 250A; Y4-M6
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Max. forward voltage: 1.09V
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 250A
Type of module: thyristor
Semiconductor structure: double series
Case: Y4-M6
товар відсутній
DSEP30-06BR DSEP30-06BR IXYS DSEP30-06BR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
товар відсутній
IXTH76P10T IXT_76P10T_HV.pdf
IXTH76P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+517.55 грн
3+ 326.68 грн
7+ 309.26 грн
IXTA60N20T IXTA(P,Q)60N20T.pdf
IXTA60N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+324.44 грн
3+ 270.78 грн
4+ 216.33 грн
11+ 203.99 грн
Мінімальне замовлення: 2
IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
товар відсутній
IXTK600N04T2 IXTK(X)600N04T2.pdf
IXTK600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
товар відсутній
IXTK60N50L2 IXTK(X)60N50L2.pdf
IXTK60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO264
Drain-source voltage: 500V
Drain current: 60A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Gate charge: 610nC
Kind of channel: enhanced
Reverse recovery time: 980ns
товар відсутній
IXTN600N04T2 IXTN600N04T2.pdf
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 40V
Drain current: 600A
On-state resistance: 1.3mΩ
Power dissipation: 940W
Type of module: MOSFET transistor
Gate charge: 590nC
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.8kA
Semiconductor structure: single transistor
Reverse recovery time: 100ns
товар відсутній
IXTN60N50L2 IXTN60N50L2.pdf
IXTN60N50L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Case: SOT227B
Drain-source voltage: 500V
Drain current: 53A
On-state resistance: 0.1Ω
Power dissipation: 735W
Type of module: MOSFET transistor
Gate charge: 610nC
Technology: Linear L2™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 150A
Semiconductor structure: single transistor
Reverse recovery time: 980ns
товар відсутній
IXTP60N20T IXTA(P,Q)60N20T.pdf
IXTP60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+376.04 грн
3+ 313.61 грн
4+ 255.53 грн
10+ 241.74 грн
Мінімальне замовлення: 2
IXTQ60N20L2 IXTH(T,Q)60N20L2.pdf
IXTQ60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
Kind of channel: enhanced
Reverse recovery time: 330ns
товар відсутній
IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
товар відсутній
IXTT60N20L2 IXTH(T,Q)60N20L2.pdf
IXTT60N20L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Kind of channel: enhanced
Reverse recovery time: 330ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 255nC
товар відсутній
IXTA1N200P3HV IXTA(H)1N200P3HV.pdf
IXTA1N200P3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXTH1N200P3 IXTA(H)1N200P3HV.pdf
IXTH1N200P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247-3
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXTH1N200P3HV IXTA(H)1N200P3HV.pdf
IXTH1N200P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товар відсутній
IXDN609SI IXDD609CI.pdf
IXDN609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8-EP
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 810 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+167.3 грн
5+ 137.2 грн
7+ 124.14 грн
19+ 117.6 грн
100+ 115.43 грн
Мінімальне замовлення: 3
IXDN609SIA IXDD609CI.pdf
IXDN609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 105ns
Output current: -9...9A
Operating temperature: -40...125°C
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Type of integrated circuit: driver
Number of channels: 1
на замовлення 927 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+111.01 грн
5+ 93.65 грн
12+ 74.05 грн
32+ 70.42 грн
Мінімальне замовлення: 4
DFE240X600NA DFE240X600NA.pdf
DFE240X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Case: SOT227B
Semiconductor structure: double independent
Load current: 120A x2
Max. forward voltage: 1.2V
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Reverse recovery time: 35ns
Technology: FRED
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2347.73 грн
2+ 2061.7 грн
3+ 2060.98 грн
CPC1303G CPC1303GR.pdf
CPC1303G
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: DIP4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 268 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+61.54 грн
8+ 45.74 грн
25+ 38.53 грн
29+ 28.65 грн
79+ 27.09 грн
Мінімальне замовлення: 7
CPC1303GR CPC1303GR.pdf
CPC1303GR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 691 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+76.22 грн
15+ 57.35 грн
40+ 53.72 грн
Мінімальне замовлення: 5
CPC1303GRTR CPC1303GR.pdf
CPC1303GRTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-2500%@0.2mA
Case: SO4
Turn-on time: 2µs
Turn-off time: 8µs
на замовлення 999 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+119.61 грн
5+ 87.11 грн
15+ 55.17 грн
41+ 52.27 грн
500+ 50.82 грн
Мінімальне замовлення: 4
MCC56-14io8B MCC56-14io8B.pdf
MCC56-14io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
товар відсутній
MCC95-14io1B MCC95_MCD95.pdf
MCC95-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2375.09 грн
MCC95-14io8B MCC95-14io8B.pdf
MCC95-14io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 116A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.7V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2272.67 грн
MCC44-14io1B MCC44-14io1B.pdf
MCC44-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC44-14io8B MCC44-14io8B.pdf
MCC44-14io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 49A; TO240AA; Ufmax: 1.8V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.8V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
VUB72-12NOXT VUB72-12NOXT.pdf
VUB72-12NOXT
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: V1-A-Pack
Application: Inverter
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 195W
Mechanical mounting: screw
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2642.46 грн
MDD200-14N1 MDD200-14N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD200-16N1 MDD200-16N1-DTE.pdf
MDD200-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
товар відсутній
MDD200-18N1 MDD200-18N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MDD200-22N1 MDD200-22N1-DTE.pdf
MDD200-22N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Max. load current: 350A
Mechanical mounting: screw
товар відсутній
IXYN120N120C3 IXYN120N120C3.pdf
IXYN120N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN82N120C3 IXYN82N120C3.pdf
IXYN82N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3H1 IXYN82N120C3H1.pdf
IXYN82N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+898.28 грн
2+ 597.46 грн
3+ 596.73 грн
4+ 564.79 грн
IXXA50N60B3 IXXA(p,h)50N60B3.pdf
IXXA50N60B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
товар відсутній
IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
товар відсутній
IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній
IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+666.09 грн
2+ 443.56 грн
6+ 419.6 грн
10+ 418.87 грн
IXYN150N60B3 IXYN150N60B3.pdf
IXYN150N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MDA72-08N1B MDD72,%20MDA72.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Type of module: diode
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
товар відсутній
MDA72-16N1B MDD72,%20MDA72.pdf
MDA72-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.6V
Load current: 113A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 1.54kA
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
товар відсутній
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 176 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+263.46 грн
3+ 219.96 грн
5+ 175.68 грн
14+ 165.52 грн
Мінімальне замовлення: 2
IXYH20N65C3 IXYA(H)20N65C3.pdf
IXYH20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYP20N65C3D1 IXY_20N65C3D1.pdf
IXYP20N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+230.63 грн
7+ 140.83 грн
17+ 132.85 грн
Мінімальне замовлення: 2
IXYP20N65C3D1M IXYP20N65C3D1M.pdf
IXYP20N65C3D1M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXFK120N65X2 IXFK120N65X2_IXFX120N65X2.pdf
IXFK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
товар відсутній
IXFX120N65X2 IXFK120N65X2_IXFX120N65X2.pdf
IXFX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 220ns
товар відсутній
IXTK120N65X2 IXT_120N65X2.pdf
IXTK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 505ns
товар відсутній
IXTX120N65X2 IXT_120N65X2.pdf
IXTX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Mounting: THT
Drain current: 120A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Kind of channel: enhanced
Case: PLUS247™
Reverse recovery time: 505ns
Drain-source voltage: 650V
товар відсутній
IX4426N IX4426-27-28.pdf
IX4426N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
на замовлення 2138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+71.14 грн
8+ 48.93 грн
23+ 38.48 грн
61+ 36.3 грн
250+ 35.72 грн
Мінімальне замовлення: 6
IX4426NTR media?resourcetype=datasheets&itemid=c6ab540e-0c18-4a06-ac19-7bd5332b5a89&filename=ix4426-27-28
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
товар відсутній
IXTK120N25P IXTK120N25P-DTE.pdf
IXTK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1203.18 грн
2+ 809.44 грн
3+ 765.88 грн
MCMA160P1600YA media?resourcetype=datasheets&amp;itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 160A; Ifmax: 250A; Y4-M6
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Max. load current: 250A
Case: Y4-M6
Max. forward voltage: 1.09V
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
MCMA160P1800YA-MI media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; Ifmax: 250A; Y4-M6
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. forward impulse current: 4.75kA
Gate current: 150/200mA
Max. forward voltage: 1.09V
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 250A
Type of module: thyristor
Semiconductor structure: double series
Case: Y4-M6
товар відсутній
DSEP30-06BR DSEP30-06BR.pdf
DSEP30-06BR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 1.61V
Power dissipation: 135W
Reverse recovery time: 25ns
Technology: HiPerFRED™
товар відсутній
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