![IXGX82N120A3 IXGX82N120A3](https://ce8dc832c.cloudimg.io/v7/_cdn_/DD/F3/00/00/1/16349_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=3080b8222548e4f64408e4add7620d593a01abbe)
IXGX82N120A3 IXYS
![IXGK(x)82N120A3.pdf](/images/adobe-acrobat.png)
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IXGX82N120A3 IXYS
Description: IGBT 1200V 260A 1250W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 34ns/265ns, Switching Energy: 5.5mJ (on), 12.5mJ (off), Test Condition: 600V, 80A, 2Ohm, 15V, Gate Charge: 340 nC, Part Status: Active, Current - Collector (Ic) (Max): 260 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 580 A, Power - Max: 1250 W.
Інші пропозиції IXGX82N120A3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IXGX82N120A3 | Виробник : IXYS |
Description: IGBT 1200V 260A 1250W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 34ns/265ns Switching Energy: 5.5mJ (on), 12.5mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 340 nC Part Status: Active Current - Collector (Ic) (Max): 260 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 580 A Power - Max: 1250 W |
товар відсутній |
|
![]() |
IXGX82N120A3 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXGX82N120A3 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
товар відсутній |