Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
LDA201STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
LDA202S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
LDA202STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
LDA203S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
LDA203STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A Number of channels: 2 Mounting: SMD Turn-on time: 7µs Turn-off time: 20µs Insulation voltage: 3.75kV CTR@If: 33-1000%@1mA Trigger current: 1A Type of optocoupler: optocoupler |
товар відсутній |
||||||||||||
IXTH500N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 500A Power dissipation: 1kW Case: TO247-3 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 84ns |
товар відсутній |
||||||||||||
IXFB150N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 150A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 355nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 260ns |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTP80N12T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
товар відсутній |
||||||||||||
IXTA110N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO263 On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
товар відсутній |
||||||||||||
IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Mounting: THT Case: TO220AB Power dissipation: 180W Kind of package: tube Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 57nC Kind of channel: enhanced Reverse recovery time: 38ns Drain-source voltage: 55V Drain current: 110A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTK102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 102A On-state resistance: 30mΩ |
товар відсутній |
||||||||||||
VVZB135-16IOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: E2-Pack Power dissipation: 390W Technology: X2PT Pulsed collector current: 225A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 84A Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor |
товар відсутній |
||||||||||||
IXTH02N250 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 1.5µs Drain-source voltage: 2.5kV Drain current: 0.2A On-state resistance: 450Ω |
товар відсутній |
||||||||||||
IXTH02N450HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Drain current: 0.2A Power dissipation: 113W Polarisation: unipolar Drain-source voltage: 4.5kV Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Type of transistor: N-MOSFET Kind of channel: enhanced On-state resistance: 625Ω |
товар відсутній |
||||||||||||
IXTH04N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us Reverse recovery time: 1.1µs Drain-source voltage: 3kV Drain current: 0.4A On-state resistance: 190Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 13nC Kind of channel: enhanced Mounting: THT Case: TO247HV |
товар відсутній |
||||||||||||
IXTH05N250P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.5kV Drain current: 0.33A Pulsed drain current: 1A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 110Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.2µs |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTH06N220P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A Type of transistor: N-MOSFET Technology: Polar3™ Polarisation: unipolar Drain-source voltage: 2.2kV Drain current: 0.38A Pulsed drain current: 1.2A Power dissipation: 104W Case: TO247HV Gate-source voltage: ±20V On-state resistance: 80Ω Mounting: THT Gate charge: 10.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.1µs |
товар відсутній |
||||||||||||
IXTH10N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: TO247-3 On-state resistance: 1.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 70ns |
товар відсутній |
||||||||||||
IXTH10P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: -500V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 50nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 414ns |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTH10P60 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 300W Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 0.5µs Drain-source voltage: -600V Drain current: -10A On-state resistance: 1Ω Type of transistor: P-MOSFET |
товар відсутній |
||||||||||||
IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 0.5µs |
товар відсутній |
||||||||||||
IXTH120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTH130N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
товар відсутній |
||||||||||||
IXTH140N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 540W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 200ns |
товар відсутній |
||||||||||||
IXTH140P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -140A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 9mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXTH140P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -140A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC3708ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Kind of channel: depleted Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 2.5W Type of transistor: N-MOSFET On-state resistance: 8Ω Drain current: 0.13A Drain-source voltage: 350V |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC3902ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.4A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC5602CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Kind of channel: depleted Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 2.5W Type of transistor: N-MOSFET On-state resistance: 14Ω Drain current: 0.13A Drain-source voltage: 350V |
на замовлення 781 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
CPC5603CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Mounting: SMD Kind of package: reel; tape Case: SOT223 Kind of channel: depleted Gate-source voltage: ±20V Polarisation: unipolar Power dissipation: 2.5W Type of transistor: N-MOSFET On-state resistance: 14Ω Drain current: 0.13A Drain-source voltage: 415V |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MD16200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Max. load current: 310A Mechanical mounting: screw |
товар відсутній |
||||||||||||
MDMA210P1600YD | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw |
товар відсутній |
||||||||||||
IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Power dissipation: 160W Turn-off time: 705ns Turn-on time: 460ns Pulsed collector current: 100A Kind of package: tube Collector current: 12A Gate-emitter voltage: ±20V Collector-emitter voltage: 3kV Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™; FRED |
товар відсутній |
||||||||||||
DPG60C300PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V Type of diode: rectifying Mounting: SMD Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 360A Power dissipation: 175W Features of semiconductor devices: fast switching Technology: HiPerFRED™ Max. off-state voltage: 300V Max. forward voltage: 1.66V Load current: 30A x2 Semiconductor structure: common cathode; double Reverse recovery time: 35ns |
товар відсутній |
||||||||||||
DCG35C1200HR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube Mounting: THT Case: ISO247™ Max. off-state voltage: 1.2kV Load current: 18A x2 Kind of package: tube Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Max. forward impulse current: 1kA Max. forward voltage: 2.2V Technology: SiC Features of semiconductor devices: ultrafast switching |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
MCMA35P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V Max. off-state voltage: 1.2kV Load current: 35A Semiconductor structure: double series Kind of package: bulk Case: TO240AA Max. forward voltage: 1.56V Gate current: 78/200mA Mechanical mounting: screw Electrical mounting: screw Type of module: thyristor |
товар відсутній |
||||||||||||
MDMA35P1200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V Case: TO240AA Electrical mounting: screw Type of module: diode Mechanical mounting: screw Max. off-state voltage: 1.2kV Load current: 35A Semiconductor structure: double series Max. forward impulse current: 500A Max. forward voltage: 1.1V |
товар відсутній |
||||||||||||
MCMA35PD1200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk Type of module: diode-thyristor Threshold on-voltage: 0.87V Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 55A Max. forward voltage: 1.22V Load current: 35A Semiconductor structure: double series Gate current: 78/200mA Max. forward impulse current: 520A Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
||||||||||||
IXBT42N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: D3PAK Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
товар відсутній |
||||||||||||
IXBT6N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 1.7kV Power dissipation: 75W Gate charge: 17nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 36A Type of transistor: IGBT Turn-on time: 104ns Kind of package: tube Case: D3PAK Turn-off time: 700ns |
товар відсутній |
||||||||||||
IXBX75N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™ Mounting: THT Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.7kV Power dissipation: 1.04kW Gate charge: 350nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 277ns Kind of package: tube Case: PLUS247™ Turn-off time: 840ns |
товар відсутній |
||||||||||||
IXXH75N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 108ns Turn-off time: 315ns |
товар відсутній |
||||||||||||
LIA120STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA Number of channels: 1 Insulation voltage: 3.75kV CTR@If: 85-115%@5mA Type of optocoupler: optocoupler Mounting: SMD |
товар відсутній |
||||||||||||
IXTK22N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: TO264 On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
товар відсутній |
||||||||||||
IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IX9907NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver |
товар відсутній |
||||||||||||
IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 1.7A Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 650V Kind of package: tube |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IX9908NTR | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Output current: 1.7A Case: SO8 Mounting: SMD Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: reel; tape Operating voltage: 650V Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver |
товар відсутній |
||||||||||||
MCC95-18io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товар відсутній |
||||||||||||
DLA20IM800PC-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A Power dissipation: 150W Kind of package: tube Type of diode: rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 0.8kV Max. forward voltage: 1.24V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 200A |
товар відсутній |
||||||||||||
VUO68-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A Leads: wire Ø 1.5mm Max. off-state voltage: 1.6kV Max. forward voltage: 1.5V Load current: 68A Max. forward impulse current: 300A Electrical mounting: THT Mechanical mounting: screw Version: module Type of bridge rectifier: three-phase Case: ECO-PAC 1 |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Case: SO8 Mounting: SMD Kind of package: tube Output current: -5...5A Operating temperature: -40...125°C Supply voltage: 5...20V Type of integrated circuit: driver Number of channels: 2 Kind of output: non-inverting Kind of integrated circuit: low-side; MOSFET gate driver |
на замовлення 1089 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IX4340NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting |
на замовлення 1128 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IX4340NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
товар відсутній |
||||||||||||
IX4340NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
товар відсутній |
||||||||||||
IXFH340N075T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 340A Power dissipation: 935W Case: TO247-3 On-state resistance: 3.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 75ns |
товар відсутній |
||||||||||||
IXFN340N07 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 70V; 340A; SOT227B; Ugs: ±30V; screw Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 70V Drain current: 340A Pulsed drain current: 1.36kA Power dissipation: 700W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 4mΩ Gate charge: 490nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
IXFT340N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns Mounting: SMD Case: TO268 Power dissipation: 935W Gate charge: 300nC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 340A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 3.2mΩ Reverse recovery time: 75ns |
товар відсутній |
||||||||||||
IXTA340N04T4 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 480W Case: TO263 On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 256nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 43ns |
товар відсутній |
||||||||||||
IXTA340N04T4-7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 480W Case: TO263-7 On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 256nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 43ns |
товар відсутній |
LDA201STR |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
LDA202S |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
LDA202STR |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
LDA203S |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 118.54 грн |
5+ | 89.07 грн |
17+ | 51.42 грн |
46+ | 48.52 грн |
LDA203STR |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Number of channels: 2
Mounting: SMD
Turn-on time: 7µs
Turn-off time: 20µs
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Trigger current: 1A
Type of optocoupler: optocoupler
товар відсутній
IXTH500N04T2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO247-3; 84ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 84ns
товар відсутній
IXFB150N65X2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 150A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 260ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1888.12 грн |
2+ | 1657.66 грн |
5+ | 1656.93 грн |
IXTP80N12T2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товар відсутній
IXTA110N055T2 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
товар відсутній
IXTP110N055T2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Mounting: THT
Case: TO220AB
Power dissipation: 180W
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 57nC
Kind of channel: enhanced
Reverse recovery time: 38ns
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Mounting: THT
Case: TO220AB
Power dissipation: 180W
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 57nC
Kind of channel: enhanced
Reverse recovery time: 38ns
Drain-source voltage: 55V
Drain current: 110A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 123.84 грн |
9+ | 98.49 грн |
24+ | 92.7 грн |
IXTK102N65X2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 450ns
Drain-source voltage: 650V
Drain current: 102A
On-state resistance: 30mΩ
товар відсутній
VVZB135-16IOXT |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
товар відсутній
IXTH02N250 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
товар відсутній
IXTH02N450HV |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Drain current: 0.2A
Power dissipation: 113W
Polarisation: unipolar
Drain-source voltage: 4.5kV
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Type of transistor: N-MOSFET
Kind of channel: enhanced
On-state resistance: 625Ω
товар відсутній
IXTH04N300P3HV |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Reverse recovery time: 1.1µs
Drain-source voltage: 3kV
Drain current: 0.4A
On-state resistance: 190Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 13nC
Kind of channel: enhanced
Mounting: THT
Case: TO247HV
товар відсутній
IXTH05N250P3HV |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.33A
Pulsed drain current: 1A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 110Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 818.89 грн |
2+ | 641.63 грн |
3+ | 640.9 грн |
4+ | 606.14 грн |
IXTH06N220P3HV |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Type of transistor: N-MOSFET
Technology: Polar3™
Polarisation: unipolar
Drain-source voltage: 2.2kV
Drain current: 0.38A
Pulsed drain current: 1.2A
Power dissipation: 104W
Case: TO247HV
Gate-source voltage: ±20V
On-state resistance: 80Ω
Mounting: THT
Gate charge: 10.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.1µs
товар відсутній
IXTH10N100D2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 70ns
товар відсутній
IXTH10P50P |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 414ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Mounting: THT
Case: TO247-3
Drain-source voltage: -500V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 50nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 414ns
на замовлення 234 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 521.75 грн |
3+ | 371.51 грн |
7+ | 351.23 грн |
IXTH10P60 |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Power dissipation: 300W
Gate charge: 135nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 0.5µs
Drain-source voltage: -600V
Drain current: -10A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
товар відсутній
IXTH11P50 |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 0.5µs
товар відсутній
IXTH120P065T |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 138 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 486.65 грн |
3+ | 328.78 грн |
8+ | 310.68 грн |
IXTH130N20T |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
товар відсутній
IXTH140N075L2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 200ns
товар відсутній
IXTH140P05T |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 602.08 грн |
2+ | 445.37 грн |
6+ | 420.75 грн |
30+ | 414.23 грн |
IXTH140P10T |
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 923.39 грн |
3+ | 810.36 грн |
CPC3708ZTR |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 8Ω
Drain current: 0.13A
Drain-source voltage: 350V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 8Ω
Drain current: 0.13A
Drain-source voltage: 350V
на замовлення 927 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 62.39 грн |
11+ | 34.33 грн |
25+ | 31.65 грн |
35+ | 24.62 грн |
94+ | 23.9 грн |
CPC3902ZTR |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 578 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 67.85 грн |
11+ | 33.75 грн |
25+ | 29.55 грн |
36+ | 23.83 грн |
97+ | 22.52 грн |
CPC5602CTR |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 14Ω
Drain current: 0.13A
Drain-source voltage: 350V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 14Ω
Drain current: 0.13A
Drain-source voltage: 350V
на замовлення 781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 60.05 грн |
10+ | 46.93 грн |
33+ | 26.36 грн |
89+ | 24.91 грн |
CPC5603CTR |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 14Ω
Drain current: 0.13A
Drain-source voltage: 415V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Mounting: SMD
Kind of package: reel; tape
Case: SOT223
Kind of channel: depleted
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 2.5W
Type of transistor: N-MOSFET
On-state resistance: 14Ω
Drain current: 0.13A
Drain-source voltage: 415V
на замовлення 992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 61.61 грн |
10+ | 46.71 грн |
29+ | 30.2 грн |
78+ | 28.53 грн |
MD16200S-DKM2MM |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Max. load current: 310A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Max. load current: 310A
Mechanical mounting: screw
товар відсутній
MDMA210P1600YD |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IXBH12N300 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Power dissipation: 160W
Turn-off time: 705ns
Turn-on time: 460ns
Pulsed collector current: 100A
Kind of package: tube
Collector current: 12A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Power dissipation: 160W
Turn-off time: 705ns
Turn-on time: 460ns
Pulsed collector current: 100A
Kind of package: tube
Collector current: 12A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™; FRED
товар відсутній
DPG60C300PC-TRL |
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 360A
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 30Ax2; 35ns; TO263AB; Ufmax: 1.66V
Type of diode: rectifying
Mounting: SMD
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 360A
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Max. off-state voltage: 300V
Max. forward voltage: 1.66V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
товар відсутній
DCG35C1200HR |
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Mounting: THT
Case: ISO247™
Max. off-state voltage: 1.2kV
Load current: 18A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 1kA
Max. forward voltage: 2.2V
Technology: SiC
Features of semiconductor devices: ultrafast switching
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 18Ax2; ISO247™; tube
Mounting: THT
Case: ISO247™
Max. off-state voltage: 1.2kV
Load current: 18A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Max. forward impulse current: 1kA
Max. forward voltage: 2.2V
Technology: SiC
Features of semiconductor devices: ultrafast switching
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6115.91 грн |
MCMA35P1200TA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Kind of package: bulk
Case: TO240AA
Max. forward voltage: 1.56V
Gate current: 78/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 35A; TO240AA; Ufmax: 1.56V
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Kind of package: bulk
Case: TO240AA
Max. forward voltage: 1.56V
Gate current: 78/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
товар відсутній
MDMA35P1200TG |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V
Case: TO240AA
Electrical mounting: screw
Type of module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Max. forward impulse current: 500A
Max. forward voltage: 1.1V
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 35A; TO240AA; Ufmax: 1.1V
Case: TO240AA
Electrical mounting: screw
Type of module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Load current: 35A
Semiconductor structure: double series
Max. forward impulse current: 500A
Max. forward voltage: 1.1V
товар відсутній
MCMA35PD1200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of module: diode-thyristor
Threshold on-voltage: 0.87V
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 55A
Max. forward voltage: 1.22V
Load current: 35A
Semiconductor structure: double series
Gate current: 78/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
IXBT42N170 |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; D3PAK
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: D3PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
товар відсутній
IXBT6N170 |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 1.7kV
Power dissipation: 75W
Gate charge: 17nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 36A
Type of transistor: IGBT
Turn-on time: 104ns
Kind of package: tube
Case: D3PAK
Turn-off time: 700ns
товар відсутній
IXBX75N170 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.7kV
Power dissipation: 1.04kW
Gate charge: 350nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 277ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 840ns
товар відсутній
IXXH75N60B3D1 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 108ns
Turn-off time: 315ns
товар відсутній
LIA120STR |
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 85-115%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; 3.75kV; CTR@If: 85-115%@5mA
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 85-115%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
товар відсутній
IXTK22N100L |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; TO264; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: TO264
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
IX9907N |
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
на замовлення 498 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 78.94 грн |
14+ | 63 грн |
37+ | 60.11 грн |
300+ | 58.66 грн |
IX9907NTR |
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товар відсутній
IX9908N |
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 650V
Kind of package: tube
на замовлення 289 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 71.75 грн |
7+ | 60.11 грн |
18+ | 47.8 грн |
49+ | 44.9 грн |
IX9908NTR |
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Output current: 1.7A
Case: SO8
Mounting: SMD
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Operating voltage: 650V
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товар відсутній
MCC95-18io1B |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
DLA20IM800PC-TUB |
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A
Power dissipation: 150W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.24V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 20A; D2PAK; Ufmax: 1.24V; Ifsm: 200A
Power dissipation: 150W
Kind of package: tube
Type of diode: rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.24V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 200A
товар відсутній
VUO68-16NO7 |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 68A
Max. forward impulse current: 300A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.5V
Load current: 68A
Max. forward impulse current: 300A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Case: ECO-PAC 1
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 992.8 грн |
3+ | 871.19 грн |
25+ | 866.85 грн |
IX4340N |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -5...5A
Operating temperature: -40...125°C
Supply voltage: 5...20V
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Case: SO8
Mounting: SMD
Kind of package: tube
Output current: -5...5A
Operating temperature: -40...125°C
Supply voltage: 5...20V
Type of integrated circuit: driver
Number of channels: 2
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 1089 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 72.53 грн |
8+ | 50.26 грн |
21+ | 40.55 грн |
58+ | 38.38 грн |
250+ | 36.72 грн |
IX4340NE |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1128 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 62.39 грн |
8+ | 49.53 грн |
21+ | 40.55 грн |
58+ | 38.38 грн |
250+ | 36.72 грн |
IX4340NETR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
IX4340NTR |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
IXFH340N075T2 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
товар відсутній
IXFN340N07 |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; Ugs: ±30V; screw
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 490nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; Ugs: ±30V; screw
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 490nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3163.24 грн |
IXFT340N075T2 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Mounting: SMD
Case: TO268
Power dissipation: 935W
Gate charge: 300nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 340A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 3.2mΩ
Reverse recovery time: 75ns
товар відсутній
IXTA340N04T4 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
товар відсутній
IXTA340N04T4-7 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
товар відсутній