Технічний опис MID100-12A3 IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.2kV, Collector current: 90A, Case: Y4-M5, Application: fans; for pump; motors; photovoltaics, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Power dissipation: 560W, Technology: NPT, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MID100-12A3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MID100/12A3 | Виробник : ABB | 07+; |
на замовлення 500 шт: термін постачання 14-28 дні (днів) |
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MID100-12A3 | Виробник : Littelfuse |
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товар відсутній |
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MID100-12A3 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MID100-12A3 | Виробник : IXYS |
Description: IGBT MODULE 1200V 135A 560W Y4M5 Packaging: Box Package / Case: Y4-M5 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Y4-M5 IGBT Type: NPT Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 560 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
товар відсутній |
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MID100-12A3 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw |
товар відсутній |